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Patent # Description
US-8,072,031 P-channel MOS transistor and semiconductor integrated circuit device
A p-channel MOS transistor includes a gate electrode formed on a silicon substrate via a gate insulating film, a channel region formed below the gate electrode...
US-8,072,030 Semiconductor device
A semiconductor device, which is connected to a protected device and protects a protected device, includes a semiconductor layer provided on an insulating film;...
US-8,072,029 High voltage semiconductor device with floating regions for reducing electric field concentration
A high voltage semiconductor device includes a source region of a first conductivity type having an elongated projection with two sides and a rounded tip in a...
US-8,072,028 Method and device including transistor component having a field electrode
A transistor component and method of forming a transistor component. One embodiment provides a semiconductor arrangement including a semiconductor body having a...
US-8,072,027 3D channel architecture for semiconductor devices
Semiconductor devices and methods for making such devices that contain a 3D channel architecture are described. The 3D channel architecture is formed using a...
US-8,072,026 Semiconductor device and method for manufacturing the same
A semiconductor device, includes a semiconductor layer of a second conductive type, a first diffused region of a first conductive type formed in the...
US-8,072,025 Non-volatile semiconductor storage device and method of manufacturing the same
A first lamination part includes: a charge accumulation layer provided on the respective sidewalls of laminated first conductive layers and accumulating...
US-8,072,024 Nonvolatile semiconductor memory device and method for manufacturing same
A nonvolatile semiconductor memory device with a substrate. A plurality of dielectric films and electrode films are alternately stacked on the substrate and...
US-8,072,023 Isolation for non-volatile memory cell array
A memory device including a plurality of storage regions arranged with storage region intervals. A plurality of conductor lines are juxtaposed the storage...
US-8,072,022 Apparatus and methods for improved flash cell characteristics
Embodiments of an apparatus and methods for providing improved flash memory cell characteristics are generally described herein. Other embodiments may be...
US-8,072,021 Nonvolatile semiconductor memory device
A memory cell includes a floating gate electrode, a first inter-electrode insulating film and a control gate electrode. A peripheral transistor includes a lower...
US-8,072,020 Nonvolatile semiconductor memory device
A first select transistor is connected to one end of a plurality of memory cell transistors that are serially connected. A second select transistor is connected...
US-8,072,019 Flash memory and manufacturing method of the same
A flash memory includes a shallow trench isolation and an active region formed at a substrate, a plurality of stacked gates formed on and/or over the active...
US-8,072,018 Semiconductor device and method for fabricating the same
A semiconductor device is provided. The semiconductor device comprises a substrate. A lamination structure is on the substrate along a first direction. The...
US-8,072,017 Nonvolatile semiconductor memory device
The invention relates to a nonvolatile semiconductor memory device including a semiconductor layer which has a source region, a drain region, and a channel...
US-8,072,016 EPI substrate with low doped EPI layer and high doped Si substrate layer for media growth on EPI and low...
The fabrication of seek-scan probe (SSP) memory devices involves processing on both-sides of a wafer. However, there are temperature restrictions on the mover...
US-8,072,015 Solid-state imaging device and manufacturing method thereof
A solid-state imaging device includes a photoelectric conversion unit, a transistor, and an element separation region separating the photoelectric conversion...
US-8,072,014 Polarity dependent switch for resistive sense memory
A memory unit includes a resistive sense memory cell configured to switch between a high resistance state and a low resistance state upon passing a current...
US-8,072,013 Trench polysilicon diode
Embodiments of the present invention include a method of manufacturing a trench transistor. The method includes forming a substrate of a first conductivity type...
US-8,072,012 Tunnel effect transistors based on elongate monocrystalline nanostructures having a heterostructure
Tunnel field-effect transistors (TFETs) are regarded as successors of metal-oxide semiconductor field-effect transistors (MOSFETs), but silicon-based TFETs...
US-8,072,011 Semiconductor device and method for operating the same
A semiconductor device includes a lateral double diffused metal oxide semiconductor (LDMOS) , a junction field effect transistor (JFET) and an inner circuit....
US-8,072,010 Membrane for a MEMS condenser microphone
A membrane (2) for a microphone (1) is disclosed which comprises a first portion (A1), a second portion (A2), and elements (E1 . . . E4, E1' . . . E4'), which...
US-8,072,009 Gas sensor having a field-effect transistor
A gas sensor having a field-effect transistor for detecting gases or gas mixtures is provided. The gas sensor includes a substrate having a source, drain and...
US-8,072,008 Biosensor having ultra fine fiber
A high-sensitivity field effect transistor using as a channel ultrafine fiber elements such as carbon nanotube, and a biosensor using it. The field effect...
US-8,072,007 Backside-illuminated imaging device
A backside-illuminated imaging device is provided and includes: a plurality of charge accumulating areas in the semiconductor substrate which accumulate the...
US-8,072,006 Double-gated sensor cell
A high quality imager is constructed using a silicon-on-insulator (SOI) process with sensors fabricated in the SOI substrate and isolated by the buried oxide...
US-8,072,005 Apparatus, method and computer program product providing radial addressing of nanowires
Disclosed is a method to construct a device that includes a plurality of nanowires (NWs) each having a core and at least one shell. The method includes...
US-8,072,004 Power and ground routing of integrated circuit devices with improved IR drop and chip performance
An integrated circuit chip includes a semiconductor substrate having thereon a plurality of inter-metal dielectric (IMD) layers and a plurality of first...
US-8,072,003 Integrated circuit device and associated layout including two pairs of co-aligned complementary gate electrodes...
A semiconductor device includes a substrate portion that includes a plurality of diffusion regions that include at least one p-type diffusion region and at...
US-8,072,002 Field effect transistor
A field effect transistor formed of a semiconductor of a III group nitride compound, includes an electron running layer formed on a substrate and formed of GaN;...
US-8,072,001 Heterojunction bipolar transistor and method for manufacturing the same, and power amplifier using the same
A heterojunction bipolar transistor with InGaP as the emitter layer and capable of both reliable electrical conduction and thermal stability wherein a GaAs...
US-8,072,000 Avalanche capability improvement in power semiconductor devices having dummy cells around edge of active area
A structure of power semiconductor device having dummy cells around edge of active area is disclosed. The UIS test result of said improved structure shows that...
US-8,071,999 Flat lighting devices and method of contacting flat lighting devices
A flat lighting device includes a layer arrangement, anode and cathode contact regions. The layer arrangement includes an anode layer, a cathode layer, and an...
US-8,071,998 Light emitting assembly
A light emitting assembly includes: a heat sink having a base wall and at least one mesa protruding from the base wall; and at least one light emitting package...
US-8,071,997 LED with light transmissive heat sink
An more efficient or higher luminance LED assembly may be formed from a high power LED chip having a first surface, and a second surface, the first surface...
US-8,071,996 Wavelength-converting casting composition and light-emitting semiconductor component
The wavelength-converting casting composition is based on a transparent epoxy casting resin with a luminous substance admixed. The composition is used in an...
US-8,071,995 Light emitting device and a method for manufacturing the same
A light emitting device, includes: a light source to emit source light; a first wavelength conversion portion to absorb the source light and to emit first light...
US-8,071,994 Semiconductor light-emitting device with improved light extraction efficiency
The present invention provides a semiconductor light-emitting device. The light-emitting device comprises a first conductive clad layer, an active layer, and a...
US-8,071,993 Organic electroluminescence element, image display device, and imaging apparatus
An organic electroluminescence element includes organic compound layers disposed between electrodes, the concentration of halogen atoms contained in organic...
US-8,071,992 Semiconductor light-emitting device
A semiconductor light-emitting device includes a support structure, and a light-emitting structure. The support structure includes a support substrate, and a...
US-8,071,991 Light-emitting diode and light-emitting diode lamp
The present invention provides a light-emitting diode (10) including a first conductive type silicon single crystal substrate (101), a light-emitting section...
US-8,071,990 Optoelectronic component that emits electromagnetic radiation and illumination module
An optoelectronic component emitting electromagnetic radiation, comprising a housing body which has a cavity, the cavity being fashioned trenchlike and in the...
US-8,071,989 Multi-chip package with a plurality of chip pads arranged in an array
A circuit structure of a package carrier including a plurality of chip pads, a first electrode, a second electrode, a third electrode and a fourth electrode is...
US-8,071,988 White light emitting device comprising a plurality of light emitting diodes with different peak emission...
Disclosed herein is a light emitting device including one or more light emitting diodes to primarily emit light having different wavelengths in the wavelength...
US-8,071,987 Housing for an optoelectronic component, optoelectronic component, and method for producing a housing for an...
A housing for an optoelectronic component is disclosed, having a plastic base body that has a front side with an assembly region for at least one radiation...
US-8,071,986 Nitride semiconductor light-emitting element
A nitride semiconductor light-emitting element 11 is one for generating light containing a wavelength component in an ultraviolet region. The nitride...
US-8,071,985 Display device and method of manufacturing the same
The invention provides a display device having a thin film transistor and a storage capacitor storing a display signal applied to a pixel electrode through this...
US-8,071,984 Thin film transistor substrate for display device and fabricating method thereof
A thin film transistor substrate for a display device having a plurality of thin film transistors and pixel electrodes connected to the thin film transistors,...
US-8,071,983 Semiconductor device structures and methods of forming semiconductor structures
A method of patterning a semiconductor film is described. According to an embodiment of the present invention, a hard mask material is formed on a silicon film...
US-8,071,982 Light emitting device and electronic equipment
A display device capable of keeping the luminance constant irrespective of temperature change is provided as well as a method of driving the display device. A...
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