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Patent # Description
US-8,076,731 Semiconductor device including a halo layer and method of fabricating the same
A semiconductor device 1 according to one embodiment of the invention includes: a semiconductor substrate 10; a convex region 12 provided on the semiconductor...
US-8,076,730 Transistor level routing
System and method for transistor level routing is disclosed. A preferred embodiment comprises a semiconductor device including a first semiconductor device...
US-8,076,729 Semiconductor device having a dual gate electrode and methods of making the same
Disclosed is a method for forming a dual gate electrode of a semiconductor device, which may improve manufacturing productivity by simplifying a process of...
US-8,076,728 Integrated circuit arrangements with ESD-resistant capacitor and corresponding method of production
A circuit arrangement including a capacitor in an n-type well is disclosed. A specific polarization of the capacitor ensures that a depletion zone arises in the...
US-8,076,727 Magnesium-doped zinc oxide structures and methods
Methods of forming transparent conducting oxides and devices formed by these methods are shown. Monolayers that contain zinc and monolayers that contain...
US-8,076,726 Semiconductor device
The semiconductor device includes: a first conductive-type first well and a second conductive-type second well configured over a substrate to contact each...
US-8,076,725 Semiconductor device and method for manufacturing the same
An impurity buried layer constructed by two buried regions formed by impurities of identical type exist, a buried region formed by an impurity having a slow...
US-8,076,724 Transistor structure having an active region and a dielectric platform region
A semiconductor device is formed having lower gate-to-drain capacitance. The semiconductor device having an active region (1300) and a dielectric platform...
US-8,076,723 Method of fabricating a deep trench insulated gate bipolar transistor
In one embodiment, a method comprises forming an epitaxial layer over a substrate of an opposite conductivity type, the epitaxial layer being separated by a...
US-8,076,722 PN junction and MOS capacitor hybrid resurf transistor
A high voltage semiconductor device, such as a RESURF transistor, having improved properties, including reduced on state resistance. The device includes a...
US-8,076,721 Fin structures and methods of fabricating fin structures
There is provided fin structures and methods for fabricating fin structures. More specifically, fin structures are formed in a substrate. The fin structures may...
US-8,076,720 Trench gate type transistor
The invention provides a trench gate type transistor in which the gate leakage current is prevented and the gate capacitance is reduced. A trench is formed in...
US-8,076,719 Semiconductor device structures and related processes
Improved highly reliable power RFP structures and fabrication and operation processes. The structure includes plurality of localized dopant concentrated zones...
US-8,076,718 Insulated gate semiconductor device and method for producing the same
The invention has an object to provide an insulation gate type semiconductor device and a method for producing the same in which high breakdown voltage and...
US-8,076,717 Vertically-oriented semiconductor selection device for cross-point array memory
A vertical semiconductor material mesa upstanding from a semiconductor base that forms a conductive channel between first and second doped regions. The first...
US-8,076,716 Electronic device including a trench and a conductive structure therein
An electronic device can include a transistor. In an embodiment, the transistor can include a semiconductor layer having a primary surface and a conductive...
US-8,076,715 Dual-bit memory device having isolation material disposed underneath a bit line shared by adjacent dual-bit...
A dual-bit memory device is provided which includes trench isolation material disposed below a bit line that is shared by adjacent memory cells. The dual-bit...
US-8,076,714 Memory device with high dielectric constant gate dielectrics and metal floating gates
A memory cell transistor includes a high dielectric constant tunnel insulator, a metal floating gate, and a high dielectric constant inter-gate insulator...
US-8,076,713 Non-volatile memory devices having a multi-layered charge storage layer
A non-volatile memory device includes a substrate having a first region and a second region. A first gate electrode is disposed on the first region. A...
US-8,076,712 Semiconductor memory comprising dual charge storage nodes and methods for its fabrication
A dual charge storage node memory device and methods for its fabrication are provided. In one embodiment a dielectric plug is formed comprising a first portion...
US-8,076,711 Semiconductor device and method of manufacturing the same
According to an aspect of the invention, there is provided a semiconductor device including a plurality of memory cells, comprising a plurality of floating gate...
US-8,076,710 Semiconductor device and method for manufacturing the same
A method for manufacturing a semiconductor device is provided. The method includes forming multiple conductive patterns 13a, forming an intermediate insulating...
US-8,076,709 Nonvolatile semiconductor memory device
In a situation where a memory cell includes an ONO film, which comprises a silicon nitride film for charge storage and oxide films positioned above and below...
US-8,076,708 Structures for and method of silicide formation on memory array and peripheral logic devices
A memory device and peripheral circuitry on a substrate are described, made by a process that includes forming a charge trapping structure having a first...
US-8,076,707 Pseudo-nonvolatile direct-tunneling floating-gate device
A semiconductor device is provided that uses a floating gate to store analog- and digital-valued information for periods of time measured in milliseconds to...
US-8,076,706 Ferroelectric memory device and method of manufacturing the same
A ferroelectric memory device includes: a substrate; a first insulating film formed above the substrate, the first insulating film including a plug; a...
US-8,076,705 Capacitor device providing sufficient reliability
A capacitor device includes a dielectric layer configured to have a composition represented as (Ba.sub.1-x, Sr.sub.x)Ti.sub.1-zSc.sub.yO.sub.3+.delta....
US-8,076,704 Organic light emitting device and manufacturing method thereof
An organic light emitting device according to an embodiment includes a thin film transistor substrate including a plurality of thin film transistors and an...
US-8,076,703 Semiconductor device and methods for fabricating same
A semiconductor device is provided which includes a substrate including an inactive region and an active region, a gate electrode structure having portions...
US-8,076,702 CMOS image sensor and fabricating method thereof
A CMOS image sensor and fabricating method thereof by which capacitance of a floating diffusion region (FD) can be increased. The CMOS image sensor can include...
US-8,076,701 Large scale patterned growth of aligned one-dimensional nanostructures
A method of making nanostructures using a self-assembled monolayer of organic spheres is disclosed. The nanostructures include bowl-shaped structures and...
US-8,076,700 P-N junction for use as an RF mixer from GHZ to THZ frequencies
This disclosure describes a semiconductor device that can be used as a mixer at RF frequencies extending from a few tens of GHz into the THz frequency range....
US-8,076,699 Integrated HEMT and lateral field-effect rectifier combinations, methods, and systems
Integrated high efficiency lateral field effect rectifier and HEMT devices of GaN or analogous semiconductor material, methods for manufacturing thereof, and...
US-8,076,698 Transistor and method for operating the same
In a transistor, an AlN buffer layer 102, an undoped GaN layer 103, an undoped AlGaN layer 104, a p-type control layer 105, and a p-type contact layer 106 are...
US-8,076,697 Solid-state imaging device, method of driving same, and camera apparatus
A solid-state imaging device of a three-transistor pixel configuration having no selection transistor has a problem of a non-selection hot carrier white point,...
US-8,076,696 Power module assembly with reduced inductance
A device is provided that includes a first conductive substrate and a second conductive substrate. A first power semiconductor component having a first...
US-8,076,695 Semiconductor device
A semiconductor device comprises a semiconductor substrate having a first semiconductor region of a first semiconductor type, a second semiconductor region of a...
US-8,076,694 Nitride semiconductor element having a silicon substrate and a current passing region
It is an object of the present invention to provide a nitride semiconductor element, which uses Si as a substrate, and whose voltage in the forward direction...
US-8,076,693 Transparent heat spreader for LEDs
A heat spreader for an LED can include a thermally conductive and optically transparent member. The bottom side of the heat spreader can be configured to attach...
US-8,076,692 LED package
The present invention provides an LED package including: a heat discharge body provided with a plurality of radially protruding heat discharge fins at an outer...
US-8,076,691 Package for light emitting device and method for packaging the same
There are provided a light emitting device package and a method for manufacturing the same. The light emitting device includes: a plurality of barriers provided...
US-8,076,690 Semiconductor light emitting apparatus having a non-light emitting corner area
A semiconductor light emitting apparatus for emitting a desired colored light by coating the top surface thereof with a wavelength conversion member prevents...
US-8,076,689 Light emitting diode
A light emitting diode includes an epitaxial layer, an electrode, electrically conductive members, a light incident layer, a light reflecting layer, an...
US-8,076,688 Light emitting diode having extensions of electrodes for current spreading
Disclosed is a light emitting diode having extensions of electrodes for improving current spreading. The light emitting diode includes a lower semiconductor...
US-8,076,687 Light emitting device for improving the color purity of emitted light and electronic apparatus
A light emitting device includes: a light emitting element which includes a first electrode layer, a second electrode layer, and a light emitting function layer...
US-8,076,686 Light emitting diode and manufacturing method thereof
A light-emitting diode and the manufacturing method thereof are disclosed. The manufacturing method includes the steps of: sequentially forming a bonding layer,...
US-8,076,685 Nitride semiconductor device having current confining layer
A nitride semiconductor device includes an active layer formed between an n-type cladding layer and a p-type cladding layer, and a current confining layer...
US-8,076,684 Group III intride semiconductor light emitting element
A group III nitride semiconductor light emitting element, comprising having a light emitting layer with a multiquantum well structure formed of a group III...
US-8,076,683 Surface-textured encapsulations for use with light emitting diodes
Surface-textured encapsulations for use with light emitting diodes. In an aspect, a light emitting diode apparatus is provided that includes a light emitting...
US-8,076,682 Contact for a semiconductor light emitting device
A semiconductor structure includes a light emitting layer disposed between an n-type region and a p-type region. A p-electrode is disposed on a portion of the...
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