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Semiconductor device including a halo layer and method of fabricating the
A semiconductor device 1 according to one embodiment of the invention includes: a semiconductor substrate 10; a convex region 12 provided on the semiconductor...
Transistor level routing
System and method for transistor level routing is disclosed. A preferred embodiment comprises a semiconductor device including a first semiconductor device...
Semiconductor device having a dual gate electrode and methods of making
Disclosed is a method for forming a dual gate electrode of a semiconductor device, which may improve manufacturing productivity by simplifying a process of...
Integrated circuit arrangements with ESD-resistant capacitor and
corresponding method of production
A circuit arrangement including a capacitor in an n-type well is disclosed. A specific polarization of the capacitor ensures that a depletion zone arises in the...
Magnesium-doped zinc oxide structures and methods
Methods of forming transparent conducting oxides and devices formed by these methods are shown. Monolayers that contain zinc and monolayers that contain...
The semiconductor device includes: a first conductive-type first well and a second conductive-type second well configured over a substrate to contact each...
Semiconductor device and method for manufacturing the same
An impurity buried layer constructed by two buried regions formed by impurities of identical type exist, a buried region formed by an impurity having a slow...
Transistor structure having an active region and a dielectric platform
A semiconductor device is formed having lower gate-to-drain capacitance. The semiconductor device having an active region (1300) and a dielectric platform...
Method of fabricating a deep trench insulated gate bipolar transistor
In one embodiment, a method comprises forming an epitaxial layer over a substrate of an opposite conductivity type, the epitaxial layer being separated by a...
PN junction and MOS capacitor hybrid resurf transistor
A high voltage semiconductor device, such as a RESURF transistor, having improved properties, including reduced on state resistance. The device includes a...
Fin structures and methods of fabricating fin structures
There is provided fin structures and methods for fabricating fin structures. More specifically, fin structures are formed in a substrate. The fin structures may...
Trench gate type transistor
The invention provides a trench gate type transistor in which the gate leakage current is prevented and the gate capacitance is reduced. A trench is formed in...
Semiconductor device structures and related processes
Improved highly reliable power RFP structures and fabrication and operation processes. The structure includes plurality of localized dopant concentrated zones...
Insulated gate semiconductor device and method for producing the same
The invention has an object to provide an insulation gate type semiconductor device and a method for producing the same in which high breakdown voltage and...
Vertically-oriented semiconductor selection device for cross-point array
A vertical semiconductor material mesa upstanding from a semiconductor base that forms a conductive channel between first and second doped regions. The first...
Electronic device including a trench and a conductive structure therein
An electronic device can include a transistor. In an embodiment, the transistor can include a semiconductor layer having a primary surface and a conductive...
Dual-bit memory device having isolation material disposed underneath a bit
line shared by adjacent dual-bit...
A dual-bit memory device is provided which includes trench isolation material disposed below a bit line that is shared by adjacent memory cells. The dual-bit...
Memory device with high dielectric constant gate dielectrics and metal
A memory cell transistor includes a high dielectric constant tunnel insulator, a metal floating gate, and a high dielectric constant inter-gate insulator...
Non-volatile memory devices having a multi-layered charge storage layer
A non-volatile memory device includes a substrate having a first region and a second region. A first gate electrode is disposed on the first region. A...
Semiconductor memory comprising dual charge storage nodes and methods for
A dual charge storage node memory device and methods for its fabrication are provided. In one embodiment a dielectric plug is formed comprising a first portion...
Semiconductor device and method of manufacturing the same
According to an aspect of the invention, there is provided a semiconductor device including a plurality of memory cells, comprising a plurality of floating gate...
Semiconductor device and method for manufacturing the same
A method for manufacturing a semiconductor device is provided. The method includes forming multiple conductive patterns 13a, forming an intermediate insulating...
Nonvolatile semiconductor memory device
In a situation where a memory cell includes an ONO film, which comprises a silicon nitride film for charge storage and oxide films positioned above and below...
Structures for and method of silicide formation on memory array and
peripheral logic devices
A memory device and peripheral circuitry on a substrate are described, made by a process that includes forming a charge trapping structure having a first...
Pseudo-nonvolatile direct-tunneling floating-gate device
A semiconductor device is provided that uses a floating gate to store analog- and digital-valued information for periods of time measured in milliseconds to...
Ferroelectric memory device and method of manufacturing the same
A ferroelectric memory device includes: a substrate; a first insulating film formed above the substrate, the first insulating film including a plug; a...
Capacitor device providing sufficient reliability
A capacitor device includes a dielectric layer configured to have a composition represented as (Ba.sub.1-x, Sr.sub.x)Ti.sub.1-zSc.sub.yO.sub.3+.delta....
Organic light emitting device and manufacturing method thereof
An organic light emitting device according to an embodiment includes a thin film transistor substrate including a plurality of thin film transistors and an...
Semiconductor device and methods for fabricating same
A semiconductor device is provided which includes a substrate including an inactive region and an active region, a gate electrode structure having portions...
CMOS image sensor and fabricating method thereof
A CMOS image sensor and fabricating method thereof by which capacitance of a floating diffusion region (FD) can be increased. The CMOS image sensor can include...
Large scale patterned growth of aligned one-dimensional nanostructures
A method of making nanostructures using a self-assembled monolayer of organic spheres is disclosed. The nanostructures include bowl-shaped structures and...
P-N junction for use as an RF mixer from GHZ to THZ frequencies
This disclosure describes a semiconductor device that can be used as a mixer at RF frequencies extending from a few tens of GHz into the THz frequency range....
Integrated HEMT and lateral field-effect rectifier combinations, methods,
Integrated high efficiency lateral field effect rectifier and HEMT devices of GaN or analogous semiconductor material, methods for manufacturing thereof, and...
Transistor and method for operating the same
In a transistor, an AlN buffer layer 102, an undoped GaN layer 103, an undoped AlGaN layer 104, a p-type control layer 105, and a p-type contact layer 106 are...
Solid-state imaging device, method of driving same, and camera apparatus
A solid-state imaging device of a three-transistor pixel configuration having no selection transistor has a problem of a non-selection hot carrier white point,...
Power module assembly with reduced inductance
A device is provided that includes a first conductive substrate and a second conductive substrate. A first power semiconductor component having a first...
A semiconductor device comprises a semiconductor substrate having a first semiconductor region of a first semiconductor type, a second semiconductor region of a...
Nitride semiconductor element having a silicon substrate and a current
It is an object of the present invention to provide a nitride semiconductor element, which uses Si as a substrate, and whose voltage in the forward direction...
Transparent heat spreader for LEDs
A heat spreader for an LED can include a thermally conductive and optically transparent member. The bottom side of the heat spreader can be configured to attach...
The present invention provides an LED package including: a heat discharge body provided with a plurality of radially protruding heat discharge fins at an outer...
Package for light emitting device and method for packaging the same
There are provided a light emitting device package and a method for manufacturing the same. The light emitting device includes: a plurality of barriers provided...
Semiconductor light emitting apparatus having a non-light emitting corner
A semiconductor light emitting apparatus for emitting a desired colored light by coating the top surface thereof with a wavelength conversion member prevents...
Light emitting diode
A light emitting diode includes an epitaxial layer, an electrode, electrically conductive members, a light incident layer, a light reflecting layer, an...
Light emitting diode having extensions of electrodes for current spreading
Disclosed is a light emitting diode having extensions of electrodes for improving current spreading. The light emitting diode includes a lower semiconductor...
Light emitting device for improving the color purity of emitted light and
A light emitting device includes: a light emitting element which includes a first electrode layer, a second electrode layer, and a light emitting function layer...
Light emitting diode and manufacturing method thereof
A light-emitting diode and the manufacturing method thereof are disclosed. The manufacturing method includes the steps of: sequentially forming a bonding layer,...
Nitride semiconductor device having current confining layer
A nitride semiconductor device includes an active layer formed between an n-type cladding layer and a p-type cladding layer, and a current confining layer...
Group III intride semiconductor light emitting element
A group III nitride semiconductor light emitting element, comprising having a light emitting layer with a multiquantum well structure formed of a group III...
Surface-textured encapsulations for use with light emitting diodes
Surface-textured encapsulations for use with light emitting diodes. In an aspect, a light emitting diode apparatus is provided that includes a light emitting...
Contact for a semiconductor light emitting device
A semiconductor structure includes a light emitting layer disposed between an n-type region and a p-type region. A p-electrode is disposed on a portion of the...