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Patent # Description
US-8,084,829 Semiconductors device and method of manufacturing such a device
The invention relates to a semiconductor device (10) comprising a semiconductor body (1) with a high-ohmic semi-conductor substrate (2) which is covered with a...
US-8,084,828 Methods for protecting gate stacks during fabrication of semiconductor devices and semiconductor devices...
Methods for protecting gate stacks during fabrication of semiconductor devices and semiconductor devices fabricated from such methods are provided. In an...
US-8,084,827 Structure and fabrication of like-polarity field-effect transistors having different configurations of...
A group of high-performance like-polarity insulated-gate field-effect transistors (100, 108, 112, 116, 120, and 124 or 102, 110, 114, 118, 122, and 126) have...
US-8,084,826 Semiconductor device and manufacturing method thereof
An element larger than silicon is ion-implanted to a contact liner in an N-channel region to break constituent atoms of the contact liner in the N-channel...
US-8,084,825 Trilayer resist scheme for gate etching applications
A trilayer resist (TLR) patterning scheme is provided to enable gate conductors, particularly polySi gate conductors, with critical dimensions (CDs) of less...
US-8,084,824 Metal gate transistor and method for fabricating the same
A method for fabricating metal gate transistor is disclosed. First, a substrate having a first transistor region and a second transistor region is provided....
US-8,084,823 Gate minimization threshold voltage of FET for synchronous rectification
A FET device for synchronous rectification of the present invention, a FET having no body diode, the characteristics have gate minimization threshold voltage...
US-8,084,822 Enhanced stress-retention fin-FET devices and methods of fabricating enhanced stress retention fin-FET devices
Fin-FETS and methods of fabricating fin-FETs. The methods include: providing substrate comprising a silicon oxide layer on a top surface of a semiconductor...
US-8,084,821 Integrated circuit including a power MOS transistor
An integrated circuit includes a first transistor having a first gate and a first source and a second transistor having a second gate and a second source. The...
US-8,084,819 Semiconductor memory device having insulation patterns and cell gate patterns
Semiconductor memory devices and methods of forming semiconductor memory devices are provided. The methods may include forming insulation layers and cell gate...
US-8,084,818 High mobility tri-gate devices and methods of fabrication
A high mobility semiconductor assembly. In one exemplary aspect, the high mobility semiconductor assembly includes a first substrate having a first reference...
US-8,084,817 Semiconductor device and method for fabricating the same
A semiconductor device includes a high voltage first conduction type well in a semiconductor substrate, a second conduction type body in the high voltage first...
US-8,084,816 Semiconductor module
A semiconductor module is disclosed. One embodiment provides a first semiconductor chip having a first contact pad on a first main surface and a second contact...
US-8,084,815 Superjunction semiconductor device
A superjunction semiconductor device includes an edge p pillar, an active region, and a termination region. The edge p pillar has a rectangular ring shape with...
US-8,084,814 Semiconductor device and method of producing the same
A semiconductor device is provided in which a semiconductor substrate can be prevented from being broken while elements can be prevented from being destroyed by...
US-8,084,813 Short gate high power MOSFET and method of manufacture
A short gate high power metal oxide semiconductor field effect transistor formed in a trench includes a short gate having gate length defined by spacers within...
US-8,084,812 Bidirectional semiconductor device, method of fabricating the same, and semiconductor device incorporating the same
A semiconductor device and a method of fabrication thereof includes a bidirectional device having a high breakdown voltage and a decreased ON voltage. An n-type...
US-8,084,811 Power devices with super junctions and associated methods manufacturing
Power devices with super junctions and associated methods of manufacturing are disclosed herein. In one embodiment, a method for forming a power device includes...
US-8,084,810 Fabrication method and structure of semiconductor non-volatile memory device
A non-volatile semiconductor memory device with good write/erase characteristics is provided. A selection gate is formed on a p-type well of a semiconductor...
US-8,084,809 Nonvolatile semiconductor memory device including pillars buried inside through holes
In a nonvolatile semiconductor memory device, a stacked body is formed by alternately stacking dielectric films and conductive films on a silicon substrate and...
US-8,084,808 Zirconium silicon oxide films
Electronic apparatus and systems include structures having a dielectric layer containing a zirconium silicon oxide film. A zirconium silicon oxide film may be...
US-8,084,807 Nonvolatile semiconductor memory device and method for manufacturing same
A multilayer body is formed by alternately stacking electrode films serving as control gates and dielectric films in a direction orthogonal to an upper surface...
US-8,084,806 Isolation structure for a memory cell using A1.sub.2O.sub.3 dielectric
The invention provides, in one exemplary embodiment, an isolation gate formed over a substrate for biasing the substrate and providing isolation between...
US-8,084,805 Three-dimensional microelectronic devices including repeating layer patterns of different thicknesses
A vertical NAND flash memory device includes a substrate having a face and a string of serially connected flash memory cells on the substrate. A first flash...
US-8,084,804 Capacitor with zirconium oxide and method for fabricating the same
A capacitor with zirconium oxide and a method for fabricating the same are provided. The method includes: forming a storage node; forming a multi-layered...
US-8,084,803 Capacitor and method of manufacturing the same
A capacitor with a mixed structure of a Metal Oxide Semiconductor (MOS) capacitor and a Poly-silicon Insulator Poly-silicon (PIP) capacitor includes a substrate...
US-8,084,802 Nonvolatile semiconductor memory
A select gate transistor has a select gate electrode composed of a first-level conductive layer and a second-level conductive layer. The first-level conductive...
US-8,084,801 Cell structure for a semiconductor memory device and method of fabricating the same
In a 6F.sup.2 cell structure of a memory device and a method of fabricating the same, the plurality of active regions may have a first area at both end portions...
US-8,084,800 Semiconductor device and a method of manufacturing the same
In connection with a semiconductor device including a capacitor element there is provided a technique capable of improving the reliability of the capacitor...
US-8,084,799 Integrated circuit with memory having a step-like programming characteristic
A memory cell includes a first electrode, a second electrode, and phase change material between the first electrode and the second electrode. The phase change...
US-8,084,798 Semiconductor device having image sensor
A pixel area for generating an image signal corresponding to incident light is formed on a semiconductor substrate. A light-shielding layer is formed on the...
US-8,084,796 Solid state imaging apparatus, method for driving the same and camera using the same
A solid state imaging apparatus includes: a plurality of photoelectric conversion cells each including a plurality of photoelectric sections arranged in an...
US-8,084,795 Resonant cavity complementary optoelectronic transistors
The CMOS field effect transistors, used in microprocessors and other digital VLSI circuits, face major challenges such as thin gate dielectrics leakage and...
US-8,084,794 Semiconductor device and manufacturing method thereof
A semiconductor device includes a first wiring extending in a first direction and a second wiring extending in a second direction which crosses the first...
US-8,084,793 Microwave semiconductor device using compound semiconductor and method for manufacturing the same
An undoped AlGaN layer 13 is formed on a buffer layer composed of a GaN series material formed on a semiconductor substrate, a drain electrode 15 and a source...
US-8,084,792 Electric component
An electric component comprising a sensor and/or actuator chip with a substrate on which a passivating layer and a sensor and/or actuator structure consisting...
US-8,084,791 Non-volatile memory device including nitrogen pocket implants and methods for making the same
In a non-volatile memory structure, the source/drain regions are surrounded by a nitrogen-doped region. As a result, an interface between the substrate and the...
US-8,084,790 Image sensing device and packaging method thereof
An image sensing device and packaging method thereof is disclosed. The packaging method includes the steps of a) providing an image sensing module, having a...
US-8,084,789 Phase change memory with ovonic threshold switch
A phase change memory includes a memory element and a selection element. The memory element is embedded in a dielectric and includes a resistive element having...
US-8,084,788 Method of forming source and drain of a field-effect-transistor and structure thereof
A semiconductor fabrication method involving the use of eSiGe is disclosed. The eSiGe approach is useful for applying the desired stresses to the channel region...
US-8,084,787 PMD liner nitride films and fabrication methods for improved NMOS performance
Semiconductor devices (102) and fabrication methods (10) are provided, in which a nitride film (130) is formed over NMOS transistors to impart a tensile stress...
US-8,084,786 Silicided base structure for high frequency transistors
High frequency performance of (e.g., silicon) bipolar devices is improved by reducing the extrinsic base resistance Rbx. Emitter, base and collector regions are...
US-8,084,785 III-nitride power semiconductor device having a programmable gate
A III-nitride semiconductor device which includes a charged floating gate electrode.
US-8,084,784 Semiconductor heterostructure and method for forming same
The invention relates to a method for forming a semiconductor heterostructure by providing a substrate with a first in-plane lattice parameter a.sub.1,...
US-8,084,783 GaN-based device cascoded with an integrated FET/Schottky diode device
A power semiconductor device is provided that includes a depletion mode (normally ON) main switching device cascoded with a higher speed switching device,...
US-8,084,782 Light-emitting film, light-emitting device and production method thereof
Provided is a light-emitting film having controllable resistivity, and a high-luminance light-emitting device, which can be driven at a low voltage, using such...
US-8,084,781 Compound semiconductor device
A compound semiconductor device (1) includes a compound semiconductor having a stacked structure (100) of a hexagonal single crystal layer (101), a boron...
US-8,084,780 Smart integrated semiconductor light emitting system including light emitting diodes and application specific...
A light emitting diode (LED) system includes a substrate, an application specific integrated circuit (ASIC) on the substrate, and at least one light emitting...
US-8,084,779 Casting for an LED module
A casting adapted to carry a light emitting diode die and an anti-static die is disclosed. The casting comprises two electrodes for opposite electrodes and a...
US-8,084,778 Light emitting diode package
There is provided an LED package having high heat dissipation efficiency. An LED package according to an aspect of the invention may include: a package body...
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