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Patent # Description
US-8,129,755 Integrated circuit with gate electrode level including at least four linear-shaped conductive structures of...
A cell of a semiconductor device is disclosed to include a diffusion level including a plurality of diffusion regions separated by inactive regions. The cell...
US-8,129,754 Integrated circuit with gate electrode level including at least six linear-shaped conductive structures forming...
A cell of a semiconductor device is disclosed to include a diffusion level including a plurality of diffusion regions separated by inactive regions. The cell...
US-8,129,753 Integrated circuit including gate electrode level region including at least seven linear-shaped conductive...
A layout of a cell of a semiconductor device is disclosed to include a diffusion level layout including a plurality of diffusion region layout shapes, including...
US-8,129,752 Integrated circuit including a linear-shaped conductive structure forming one gate electrode and having length...
A semiconductor device includes a substrate portion including a plurality of diffusion regions defined in a non-symmetrical manner relative to a virtual...
US-8,129,751 Integrated circuit including at least six linear-shaped conductive structures forming gate electrodes and...
A semiconductor device includes a substrate portion having a plurality of diffusion regions defined therein in a non-symmetrical manner relative to a virtual...
US-8,129,750 Integrated circuit including at least six linear-shaped conductive structures forming gate electrodes of...
A semiconductor device includes a substrate portion having a plurality of diffusion regions defined therein in a non-symmetrical manner relative to a virtual...
US-8,129,749 Double quantum well structures for transistors
Double quantum well structures for transistors are generally described. In one example, an apparatus includes a semiconductor substrate, one or more buffer...
US-8,129,748 Nitride semiconductor device and method for fabricating the same
A nitride semiconductor device includes: a first nitride semiconductor layer; a second nitride semiconductor layer formed on the first nitride semiconductor...
US-8,129,747 Semiconductor heterostructures having reduced dislocation pile-ups and related methods
Dislocation pile-ups in compositionally graded semiconductor layers are reduced or eliminated, thereby leading to increased semiconductor device yield and...
US-8,129,746 Phase change memory device and method of manufacturing the same
A phase change memory device having a strain transistor and a method of making the same are presented. The phase change memory device includes a semiconductor...
US-8,129,745 Method of manufacturing an instant pulse filter using anodic oxidation and instant pulse filter manufactured by...
The instant pulse filter according to the present invention, which may cause a malfunction or a short life span of a semiconductor device, is made using an...
US-8,129,744 Light emitting device
A light emitting device is provided that includes a substrate, a light emitting unit formed on the substrate, and an encapsulation unit. The encapsulation unit...
US-8,129,743 Light emitting device
A light emitting device includes a light emitting element, an element mounting board including a wiring layer on an element mounting surface thereof, and a...
US-8,129,742 Semiconductor chip assembly with post/base heat spreader and plated through-hole
A semiconductor chip assembly includes a semiconductor device, a heat spreader, a conductive trace and an adhesive. The heat spreader includes a post and a...
US-8,129,741 Light emitting diode package
The present invention provides a light emitting diode package including: a package mold having a first cavity and a second cavity with a smaller size than that...
US-8,129,740 Side view LED package and back light module comprising the same
Disclosed is a side view LED package that can be more accurately mounted onto a surface of a substrate such as a printed circuit board without distortion...
US-8,129,739 Semiconductor light emitting device and semiconductor light emitting device mounted board
In a semiconductor light emitting device having a matrix of a plurality of bumps composed of one n-bump formed on an n-electrode layer and of a large number of...
US-8,129,738 Optoelectronic device with periodic grating microstructure
This invention relates to optoelectronic devices of improved efficiency. In particular it relates to light emitting diodes, photodiodes and photovoltaics. By...
US-8,129,737 Optoelectronic component
Described is an optoelectronic component with at least one semiconductor body having an active region for generating electromagnetic radiation, and with a...
US-8,129,736 Light-emitting diode
The invention discloses a light-emitting diode which includes a substrate on which a first conducting-type semiconductor layer, an illuminating layer and a...
US-8,129,735 LED with controlled angular non-uniformity
A light source that uses a light emitting diode with a wavelength converting element is configured to produce a non-uniform angular color distribution, e.g.,...
US-8,129,734 LED package with stepped aperture
A light emitting diode (LED) package for high temperature operation which includes a printed wire board and a heat sink. The LED package may include a formed...
US-8,129,733 Gallium nitride light emitting devices on diamond
Gallium nitride devices are formed on a diamond substrate, such as for light emitting diodes as a replacement for incandescent light bulbs and fluorescent light...
US-8,129,732 Nitride semiconductor light-emitting device and method for fabrication thereof
An adhesion layer of a hexagonal crystal is laid on a facet an optical resonator of a nitride semiconductor laser bar having a nitride-based III-V group...
US-8,129,731 Light emitting diode lighting device
The present invention relates to a light emitting diode (LED) lighting device (10). The lighting device comprises a light guide plate (12), and a plurality of...
US-8,129,730 Solid state light sheet and bare die semiconductor circuits with series connected bare die circuit elements
An electronically active sheet includes a bottom substrate having a bottom electrically conductive surface. A top substrate having a top electrically conductive...
US-8,129,729 Light emitting device having light emitting elements and an air bridge line
A light-emitting device operating on a high drive voltage and a small drive current. LEDs (1) are two-dimensionally formed on an insulating substrate (10) of...
US-8,129,728 Light emitting device and method for enhancing light extraction thereof
A method for enhancing light extraction of a light emitting device is disclosed. The method includes the steps of: providing a site layer on the light emitting...
US-8,129,727 Semiconductor light emitting device
A semiconductor light emitting device including a second electrode layer; a light emitting unit including a plurality of compound semiconductor layers under one...
US-8,129,726 Light-emitting diode package having electrostatic discharge protection function and method of fabricating the same
A light-emitting diode (LED) package having electrostatic discharge (ESD) protection function and a method of fabricating the same adopt a composite substrate...
US-8,129,725 Semiconductor sensor
A semiconductor sensor determines physical and/or chemical properties of a medium, in particular a pH sensor. The semiconductor sensor has an electronic...
US-8,129,724 Display device including first, second, and third semiconductor films
A display device including a transparent substrate, and a plurality of thin film transistors formed on the transparent substrate, wherein each of the thin film...
US-8,129,723 Liquid crystal display and panel therefor
A thin film transistor array panel according to an embodiment of the present invention includes: a gate line; a data line intersecting the gate line; a thin...
US-8,129,722 Light emitting display and method of manufacturing the same
A light emitting display and a method of manufacturing the same. The light emitting display includes a substrate, a plurality of first and second signal lines...
US-8,129,721 Semiconductor device and method for fabricating the same
The invention primarily provides gate electrodes and gate wirings permitting large-sized screens for active matrix-type display devices, wherein, in order to...
US-8,129,720 Double self-aligned metal oxide TFT
A method of fabricating metal oxide TFTs on transparent substrates includes the steps of positioning an opaque gate metal area on the front surface of the...
US-8,129,719 Semiconductor device and method for manufacturing the semiconductor device
An object is to provide favorable interface characteristics of a thin film transistor including an oxide semiconductor layer without mixing of an impurity such...
US-8,129,718 Amorphous oxide semiconductor and thin film transistor using the same
There is provided an amorphous oxide semiconductor including hydrogen and at least one element of indium (In) and zinc (Zn), the amorphous oxide semiconductor...
US-8,129,717 Semiconductor device and method for manufacturing the same
It is an object to provide a semiconductor device including a thin film transistor with favorable electric properties and high reliability, and a method for...
US-8,129,716 OTFT and MIM capacitor using silk protein as dielectric material and methods for manufacturing the same
An organic thin film transistor (OTFT) and a metal-insulator-metal (MIM) capacitor using silk protein as a dielectric material, and methods for manufacturing...
US-8,129,715 Light emitting device
A light emitting device having a plastic substrate is capable of preventing the substrate from deterioration with the transmission of oxygen or moisture content...
US-8,129,714 Semiconductor, semiconductor device, complementary transistor circuit device
A semiconductor device including a semiconductor 1, a first electrode 2, an insulating layer 3 interposed between the semiconductor 1 and the first electrode 2,...
US-8,129,713 Photoelectric conversion element, method for manufacturing photoelectric conversion element, and electronic...
A photoelectric conversion element includes a first electrode, a second electrode, and a photoelectric conversion element provided between the first electrode...
US-8,129,712 Organic EL panel
Each pixel includes a region where a lower reflection film is not present. In each pixel, there is a region where a microcavity structure is formed between a...
US-8,129,711 Nitride semiconductor light emitting device and fabrication method thereof
The present invention relates to a GaN based nitride based light emitting device improved in Electrostatic Discharge (ESD) tolerance (withstanding property) and...
US-8,129,710 Plasmon enhanced nanowire light emitting diode
A nanowire light emitting diode (LED) and method of emitting light employ a plasmonic mode. The nanowire LED includes a nanowire having a semiconductor...
US-8,129,709 Nonvolatile memory device
A nonvolatile memory device (21) is provided with a semiconductor substrate, a plurality of active regions (3) formed on the semiconductor substrate and...
US-8,129,708 Highly integrated phase change memory device having micro-sized diodes and method for manufacturing the same
A highly integrated phase change memory device and a method for manufacturing the same is disclosed. The highly integrated phase change memory device includes a...
US-8,129,707 Semiconductor integrated circuit device
With a high-speed nonvolatile phase change memory, reliability in respect of the number of refresh times is enhanced. In a memory cell forming area of a phase...
US-8,129,706 Structures and methods of a bistable resistive random access memory
Structures and methods to form a bistable resistive random access memory for reducing the amount of heat dissipation from electrodes by confining a heating...
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