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| Patent # | Description |
|---|---|
| US-8,138,553 |
Semiconductor device and method of manufacturing the same A gate insulating film is formed on a main surface of a substrate in which an element isolation region is formed. A metal film is formed on the gate insulating... |
| US-8,138,552 |
Semiconductor device and method of manufacturing the same A semiconductor device according to an embodiment of the present invention includes a substrate, a gate insulation film formed on the substrate, a gate... |
| US-8,138,551 |
Semiconductor device with transistors and its manufacturing method A semiconductor device includes a semiconductor substrate, a first transistor including a first gate electrode, a first diffusion region, and a second diffusion... |
| US-8,138,550 |
Method of manufacturing a semiconductor device and a semiconductor device A method of manufacturing a semiconductor device, has forming a gate insulating film over a surface of a substrate, eliminating a portion of the gate insulating... |
| US-8,138,549 |
System for displaying images A system for displaying images is disclosed. A display panel comprises a first substrate and a second substrate with a liquid crystal layer interposed... |
| US-8,138,548 |
Thin film transistor array substrate and method for manufacturing the same A thin film transistor array substrate includes a substrate, a gate layer, a gate insulating layer, a source/drain layer, a patterned protective layer, an oxide... |
| US-8,138,547 |
MOSFET on silicon-on-insulator REDX with asymmetric source-drain contacts A semiconductor device is disclosed that includes a silicon-on-insulator substrate including a buried insulator layer and an overlying semiconductor layer.... |
| US-8,138,546 |
Electrostatic discharge protection device and method of fabricating same A silicon control rectifier and an electrostatic discharge protection device of an integrated circuit including the silicon control rectifier. The silicon... |
| US-8,138,545 |
Semiconductor device and method for manufacturing the same A semiconductor device includes: a substrate on and/or over which a first conductive type well is formed; and an LDMOS device that includes a gate electrode and... |
| US-8,138,544 |
Castellated gate MOSFET tetrode capable of fully-depleted operation A castellated-gate MOSFET tetrode device capable of fully depleted operation is disclosed. The device includes a semiconductor substrate region having an upper... |
| US-8,138,543 |
Hybrid FinFET/planar SOI FETs A circuit structure is disclosed which contains least one each of three different kinds of devices in a silicon layer on insulator (SOI): a planar NFET device,... |
| US-8,138,542 |
Semiconductor device and manufacturing method of the semiconductor device A semiconductor device including an n-type semiconductor substrate, a p-type channel region and a junction layer provided between the n-type semiconductor... |
| US-8,138,541 |
Memory cells Some embodiments include memory cells that contain floating bodies and diodes. The diodes may be gated diodes having sections doped to a same conductivity type... |
| US-8,138,540 |
Trench type non-volatile memory having three storage locations in one
memory cell A non-volatile memory. The non-volatile memory comprises a substrate, a conductive layer, a charge storage layer, several first doped regions and several second... |
| US-8,138,539 |
Semiconductor devices and methods of manufacture thereof Semiconductor devices and methods of manufacture thereof are disclosed. In one embodiment, a capacitor plate includes a plurality of first parallel conductive... |
| US-8,138,538 |
Interconnect structure for semiconductor devices One embodiment relates to an integrated circuit formed on a semiconductor body having interconnect between source/drain regions of a first and second... |
| US-8,138,537 |
Semiconductor device with grooved capacitor structure In a semiconductor device comprising a capacitive element, an area of the capacitive element is reduced without impairing performance, and further, without... |
| US-8,138,536 |
Semiconductor device having cylindrical lower electrode of capacitor and
manufacturing method thereof To provide a semiconductor device including: plural capacitors each including a cylindrical lower electrode having an internal wall and an external wall, and an... |
| US-8,138,535 |
Method for manufacturing a pixel sensing circuit Systems and methods of pixel sensing circuits. In accordance with a first embodiment of the present invention, a pixel sensing circuit includes a floating... |
| US-8,138,534 |
Anti-reflection structures for CMOS image sensors Optical structures having an array of protuberances between two layers having different refractive indices are provided. The array of protuberances has vertical... |
| US-8,138,533 |
Semiconductor device with an electrode as an alignment mark, and method of
manufacturing the same A semiconductor device includes a semiconductor substrate, a back side drawn electrode formed by embedding a first conductive material in a contact hole... |
| US-8,138,532 |
Pin photodiode and manufacturing method of same The objective of this invention is to provide a semiconductor device containing a photodiode and having stable, high sensitivity with respect to short... |
| US-8,138,531 |
Structures, design structures and methods of fabricating global shutter
pixel sensor cells Pixel sensor cells, method of fabricating pixel sensor cells and design structure for pixel sensor cells. The pixel sensor cells including: a photodiode body in... |
| US-8,138,530 |
CMOS image sensor having a crosstalk prevention structure In a method of manufacturing a CMOS image sensor, a P type epitaxial layer is formed on an N type substrate. A deep P.sup.+ type well layer is formed in the P... |
| US-8,138,529 |
Package configurations for low EMI circuits An electronic component includes a high voltage switching transistor encased in a package. The high voltage switching transistor comprises a source electrode, a... |
| US-8,138,528 |
Solid state image pickup device and manufacturing method therefor A MOS-type solid-state image pickup device, on a semiconductor substrate, includes a photoelectric conversion unit having a first semiconductor region of a... |
| US-8,138,527 |
Transistor and semiconductor device An accumulation mode transistor has an impurity concentration of a semiconductor layer in a channel region at a value higher than 2.times.10.sup.17 cm.sup.-3 to... |
| US-8,138,526 |
Semiconductor structures including dual fins Fin-FET (fin field effect transistor) devices and methods of fabrication are disclosed. The Fin-FET devices include dual fin structures that may form a channel... |
| US-8,138,525 |
Integrated circuit including at least three linear-shaped conductive
structures of different length each... A cell of a semiconductor device includes a substrate portion formed to include at least one p-type diffusion region and at least one n-type diffusion region... |
| US-8,138,524 |
Self-aligned method of forming a semiconductor memory array of floating
memory cells with source side erase,... A method of forming an array of floating gate memory cells, and an array formed thereby, wherein each memory cell includes a substrate of semiconductor material... |
| US-8,138,523 |
Semiconductor device having silicon on stressed liner (SOL) A method of fabricating an integrated circuit and an integrated circuit having silicon on a stress liner are disclosed. In one embodiment, the method comprises... |
| US-8,138,522 |
Gate controlled atomic switch The invention relates to a method for producing a switch element. The invention is characterized in that the switch element comprises three electrodes that are... |
| US-8,138,521 |
Thyristor semiconductor device and switching method thereof The objective of this invention is to provide a semiconductor device having a thyristor that can shorten the turn-off time. A first electroconductive type first... |
| US-8,138,520 |
Bi-directional diode structure In one embodiment, a bi-directional diode structure is formed to have a substantially symmetrical current-voltage characteristic. |
| US-8,138,518 |
Light emitting diode, package structure and manufacturing method thereof A light emitting diode (LED), a fabricating method thereof, and a package structure thereof are provided. The LED includes a substrate, a first semiconductor... |
| US-8,138,517 |
Light-emitting diode package An LED package is provided. The LED package includes a leadframe having a pair of first electrodes and a pair of second electrodes, an LED chip disposed on the... |
| US-8,138,516 |
Light emitting diode A light emitting diode is provided, comprising: a substrate; a metal wiring layer disposed on the substrate; alight emitting element provided on the metal... |
| US-8,138,515 |
Surface mounted LED structure and packaging method of integrating
functional circuits on a silicon The present invention relates to a surface mounted LED structure of integrating functional circuits on a silicon substrate, comprising the silicon substrate and... |
| US-8,138,514 |
Side-view light emitting diode package having a reflector Disclosed herein is a side-view light emitting diode package with a reflector. The side-view light emitting diode package of the present invention comprises... |
| US-8,138,513 |
Light emitting device and method of fabricating the same A light emitting device package comprises: a substrate; first and second conduction members on the substrate; a light emitting diode on the substrate, the light... |
| US-8,138,512 |
LED package with metal PCB The present invention relates to a light emitting diode (LED) package. An object of the present invention is to provide an LED package having a metal PCB, which... |
| US-8,138,511 |
Radiation-emitting semiconductor component and method for producing the
semiconductor component A radiation-emitting semiconductor component has an improved radiation efficiency. The semiconductor component has a multilayer structure with an active layer... |
| US-8,138,510 |
Gallium nitride light emitting devices and methods of manufacturing the
same A gallium nitride (GaN) light emitting device and a method of manufacturing the same are provided, the method including sequentially forming a buffer layer and... |
| US-8,138,509 |
Light emitting device having luminescent layer with opening to exposed
bond pad on light emitting die for wire... Light emitting devices conformally covered by a luminescent material layer are presented. A light emitting device includes a semiconductor light emitting die... |
| US-8,138,508 |
LED chip package structure with different LED spacings and a method for
making the same An LED chip package structure with different LED spacing includes a substrate unit, a light-emitting unit, and a package colloid unit. The light-emitting unit... |
| US-8,138,507 |
Package for light emitting device A semiconductor light emitting package is discussed, which includes a base having a top surface with a flat portion; a semiconductor light emitting device on... |
| US-8,138,506 |
Group III nitride-based compound semiconductor light-emitting device In the Group III nitride-based compound semiconductor light-emitting device of the invention, an non-light-emitting area is formed in a light-emitting layer. In... |
| US-8,138,505 |
Light-emitting device, display apparatus, and electronic system A light-emitting device includes a cathode, an anode, a first light-emitting layer that is disposed between the cathode and the anode and that emits light of a... |
| US-8,138,504 |
Silicon carbide semiconductor device and method of manufacturing the same A silicon carbide semiconductor device having excellent performance characteristics and a method of manufacturing the same are obtained. A coating film made of... |
| US-8,138,503 |
Display substrate having a protruding barrier pattern A display substrate includes a base substrate, a barrier pattern, a source electrode, a drain electrode, a semiconductor layer, an insulating layer, and a gate... |
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