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Patent # Description
US-8,138,553 Semiconductor device and method of manufacturing the same
A gate insulating film is formed on a main surface of a substrate in which an element isolation region is formed. A metal film is formed on the gate insulating...
US-8,138,552 Semiconductor device and method of manufacturing the same
A semiconductor device according to an embodiment of the present invention includes a substrate, a gate insulation film formed on the substrate, a gate...
US-8,138,551 Semiconductor device with transistors and its manufacturing method
A semiconductor device includes a semiconductor substrate, a first transistor including a first gate electrode, a first diffusion region, and a second diffusion...
US-8,138,550 Method of manufacturing a semiconductor device and a semiconductor device
A method of manufacturing a semiconductor device, has forming a gate insulating film over a surface of a substrate, eliminating a portion of the gate insulating...
US-8,138,549 System for displaying images
A system for displaying images is disclosed. A display panel comprises a first substrate and a second substrate with a liquid crystal layer interposed...
US-8,138,548 Thin film transistor array substrate and method for manufacturing the same
A thin film transistor array substrate includes a substrate, a gate layer, a gate insulating layer, a source/drain layer, a patterned protective layer, an oxide...
US-8,138,547 MOSFET on silicon-on-insulator REDX with asymmetric source-drain contacts
A semiconductor device is disclosed that includes a silicon-on-insulator substrate including a buried insulator layer and an overlying semiconductor layer....
US-8,138,546 Electrostatic discharge protection device and method of fabricating same
A silicon control rectifier and an electrostatic discharge protection device of an integrated circuit including the silicon control rectifier. The silicon...
US-8,138,545 Semiconductor device and method for manufacturing the same
A semiconductor device includes: a substrate on and/or over which a first conductive type well is formed; and an LDMOS device that includes a gate electrode and...
US-8,138,544 Castellated gate MOSFET tetrode capable of fully-depleted operation
A castellated-gate MOSFET tetrode device capable of fully depleted operation is disclosed. The device includes a semiconductor substrate region having an upper...
US-8,138,543 Hybrid FinFET/planar SOI FETs
A circuit structure is disclosed which contains least one each of three different kinds of devices in a silicon layer on insulator (SOI): a planar NFET device,...
US-8,138,542 Semiconductor device and manufacturing method of the semiconductor device
A semiconductor device including an n-type semiconductor substrate, a p-type channel region and a junction layer provided between the n-type semiconductor...
US-8,138,541 Memory cells
Some embodiments include memory cells that contain floating bodies and diodes. The diodes may be gated diodes having sections doped to a same conductivity type...
US-8,138,540 Trench type non-volatile memory having three storage locations in one memory cell
A non-volatile memory. The non-volatile memory comprises a substrate, a conductive layer, a charge storage layer, several first doped regions and several second...
US-8,138,539 Semiconductor devices and methods of manufacture thereof
Semiconductor devices and methods of manufacture thereof are disclosed. In one embodiment, a capacitor plate includes a plurality of first parallel conductive...
US-8,138,538 Interconnect structure for semiconductor devices
One embodiment relates to an integrated circuit formed on a semiconductor body having interconnect between source/drain regions of a first and second...
US-8,138,537 Semiconductor device with grooved capacitor structure
In a semiconductor device comprising a capacitive element, an area of the capacitive element is reduced without impairing performance, and further, without...
US-8,138,536 Semiconductor device having cylindrical lower electrode of capacitor and manufacturing method thereof
To provide a semiconductor device including: plural capacitors each including a cylindrical lower electrode having an internal wall and an external wall, and an...
US-8,138,535 Method for manufacturing a pixel sensing circuit
Systems and methods of pixel sensing circuits. In accordance with a first embodiment of the present invention, a pixel sensing circuit includes a floating...
US-8,138,534 Anti-reflection structures for CMOS image sensors
Optical structures having an array of protuberances between two layers having different refractive indices are provided. The array of protuberances has vertical...
US-8,138,533 Semiconductor device with an electrode as an alignment mark, and method of manufacturing the same
A semiconductor device includes a semiconductor substrate, a back side drawn electrode formed by embedding a first conductive material in a contact hole...
US-8,138,532 Pin photodiode and manufacturing method of same
The objective of this invention is to provide a semiconductor device containing a photodiode and having stable, high sensitivity with respect to short...
US-8,138,531 Structures, design structures and methods of fabricating global shutter pixel sensor cells
Pixel sensor cells, method of fabricating pixel sensor cells and design structure for pixel sensor cells. The pixel sensor cells including: a photodiode body in...
US-8,138,530 CMOS image sensor having a crosstalk prevention structure
In a method of manufacturing a CMOS image sensor, a P type epitaxial layer is formed on an N type substrate. A deep P.sup.+ type well layer is formed in the P...
US-8,138,529 Package configurations for low EMI circuits
An electronic component includes a high voltage switching transistor encased in a package. The high voltage switching transistor comprises a source electrode, a...
US-8,138,528 Solid state image pickup device and manufacturing method therefor
A MOS-type solid-state image pickup device, on a semiconductor substrate, includes a photoelectric conversion unit having a first semiconductor region of a...
US-8,138,527 Transistor and semiconductor device
An accumulation mode transistor has an impurity concentration of a semiconductor layer in a channel region at a value higher than 2.times.10.sup.17 cm.sup.-3 to...
US-8,138,526 Semiconductor structures including dual fins
Fin-FET (fin field effect transistor) devices and methods of fabrication are disclosed. The Fin-FET devices include dual fin structures that may form a channel...
US-8,138,525 Integrated circuit including at least three linear-shaped conductive structures of different length each...
A cell of a semiconductor device includes a substrate portion formed to include at least one p-type diffusion region and at least one n-type diffusion region...
US-8,138,524 Self-aligned method of forming a semiconductor memory array of floating memory cells with source side erase,...
A method of forming an array of floating gate memory cells, and an array formed thereby, wherein each memory cell includes a substrate of semiconductor material...
US-8,138,523 Semiconductor device having silicon on stressed liner (SOL)
A method of fabricating an integrated circuit and an integrated circuit having silicon on a stress liner are disclosed. In one embodiment, the method comprises...
US-8,138,522 Gate controlled atomic switch
The invention relates to a method for producing a switch element. The invention is characterized in that the switch element comprises three electrodes that are...
US-8,138,521 Thyristor semiconductor device and switching method thereof
The objective of this invention is to provide a semiconductor device having a thyristor that can shorten the turn-off time. A first electroconductive type first...
US-8,138,520 Bi-directional diode structure
In one embodiment, a bi-directional diode structure is formed to have a substantially symmetrical current-voltage characteristic.
US-8,138,518 Light emitting diode, package structure and manufacturing method thereof
A light emitting diode (LED), a fabricating method thereof, and a package structure thereof are provided. The LED includes a substrate, a first semiconductor...
US-8,138,517 Light-emitting diode package
An LED package is provided. The LED package includes a leadframe having a pair of first electrodes and a pair of second electrodes, an LED chip disposed on the...
US-8,138,516 Light emitting diode
A light emitting diode is provided, comprising: a substrate; a metal wiring layer disposed on the substrate; alight emitting element provided on the metal...
US-8,138,515 Surface mounted LED structure and packaging method of integrating functional circuits on a silicon
The present invention relates to a surface mounted LED structure of integrating functional circuits on a silicon substrate, comprising the silicon substrate and...
US-8,138,514 Side-view light emitting diode package having a reflector
Disclosed herein is a side-view light emitting diode package with a reflector. The side-view light emitting diode package of the present invention comprises...
US-8,138,513 Light emitting device and method of fabricating the same
A light emitting device package comprises: a substrate; first and second conduction members on the substrate; a light emitting diode on the substrate, the light...
US-8,138,512 LED package with metal PCB
The present invention relates to a light emitting diode (LED) package. An object of the present invention is to provide an LED package having a metal PCB, which...
US-8,138,511 Radiation-emitting semiconductor component and method for producing the semiconductor component
A radiation-emitting semiconductor component has an improved radiation efficiency. The semiconductor component has a multilayer structure with an active layer...
US-8,138,510 Gallium nitride light emitting devices and methods of manufacturing the same
A gallium nitride (GaN) light emitting device and a method of manufacturing the same are provided, the method including sequentially forming a buffer layer and...
US-8,138,509 Light emitting device having luminescent layer with opening to exposed bond pad on light emitting die for wire...
Light emitting devices conformally covered by a luminescent material layer are presented. A light emitting device includes a semiconductor light emitting die...
US-8,138,508 LED chip package structure with different LED spacings and a method for making the same
An LED chip package structure with different LED spacing includes a substrate unit, a light-emitting unit, and a package colloid unit. The light-emitting unit...
US-8,138,507 Package for light emitting device
A semiconductor light emitting package is discussed, which includes a base having a top surface with a flat portion; a semiconductor light emitting device on...
US-8,138,506 Group III nitride-based compound semiconductor light-emitting device
In the Group III nitride-based compound semiconductor light-emitting device of the invention, an non-light-emitting area is formed in a light-emitting layer. In...
US-8,138,505 Light-emitting device, display apparatus, and electronic system
A light-emitting device includes a cathode, an anode, a first light-emitting layer that is disposed between the cathode and the anode and that emits light of a...
US-8,138,504 Silicon carbide semiconductor device and method of manufacturing the same
A silicon carbide semiconductor device having excellent performance characteristics and a method of manufacturing the same are obtained. A coating film made of...
US-8,138,503 Display substrate having a protruding barrier pattern
A display substrate includes a base substrate, a barrier pattern, a source electrode, a drain electrode, a semiconductor layer, an insulating layer, and a gate...
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