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Patent # Description
US-8,138,051 Integrated circuit system with high voltage transistor and method of manufacture thereof
A method of manufacture of an integrated circuit system includes: providing a semiconductor substrate having an active region, implanted with impurities of a...
US-8,138,050 Transistor device comprising an asymmetric embedded semiconductor alloy
Transistor characteristics may be adjusted on the basis of asymmetrically formed cavities in the drain and source areas so as to maintain a strain-inducing...
US-8,138,049 Fabrication of lateral double-diffused metal oxide semiconductor (LDMOS) devices
Methods of making, structures, devices, and/or applications for lateral double-diffused metal oxide semiconductor (LDMOS) transistors are disclosed. In one...
US-8,138,048 Semiconductor storage device
It is intended to provide a semiconductor device having a reduced thickness of a silicon nitride film on an outer periphery of a gate electrode of an SGT. A...
US-8,138,047 Super junction semiconductor device
In the specification and drawing a super junction semiconductor device is disclosed. The super junction semiconductor device comprises a P-type layer, a N.sup.+...
US-8,138,046 Process for fabricating a nanowire-based vertical transistor structure
The invention relates to a process for fabricating a vertical transistor structure. On a substrate (10), is a first conductive layer (11), providing the source...
US-8,138,045 Method of forming sidewall spacers to reduce formation of recesses in the substrate and increase dopant...
A method of forming sidewall spacers for a gate in a semiconductor device includes depositing a gate oxide layer over a gate and source/drain regions, and using...
US-8,138,044 Method for manufacturing semiconductor flash memory and flash memory cell
A semiconductor flash memory includes a tunnel oxide film formed over a semiconductor substrate, a first spacer composed of polysilicon formed over the...
US-8,138,043 Non-volatile semiconductor memory device and method of manufacturing the same
A method of manufacturing a non-volatile semiconductor memory device including previously forming a recess in a first peripheral region on a semiconductor...
US-8,138,042 Capacitor, method of increasing a capacitance area of same, and system containing same
A capacitor includes a substrate (110, 210), a first electrically insulating layer (120, 220) over the substrate, and a fin (130, 231) including a...
US-8,138,041 In-situ silicon cap for metal gate electrode
Structure and method of improving the performance of metal gate devices by depositing an in-situ silicon (Si) cap are disclosed. A wafer including a substrate...
US-8,138,040 Method of manufacturing semiconductor device
The invention provides a method of manufacturing a semiconductor device having a MOS transistor, a resistor element, etc on one semiconductor substrate, in...
US-8,138,039 Vertical wrap-around-gate field-effect-transistor for high density, low voltage logic and memory array
A vertical transistor having a wrap-around-gate and a method of fabricating such a transistor. The wrap-around-gate (WAG) vertical transistors are fabricated by...
US-8,138,038 Superior fill conditions in a replacement gate approach by performing a polishing process based on a...
In a replacement gate approach, a top area of a gate opening may receive a superior cross-sectional shape after the deposition of a work function adjusting...
US-8,138,037 Method and structure for gate height scaling with high-k/metal gate technology
A method and structure to scale metal gate height in high-k/metal gate transistors. A method includes forming a dummy gate and at least one polysilicon feature,...
US-8,138,036 Through silicon via and method of fabricating same
A through silicon via structure and a method of fabricating the through silicon via. The method includes: (a) forming a trench in a silicon substrate, the...
US-8,138,035 Method for forming integrated circuits with aligned (100) NMOS and (110) PMOS FinFET sidewall channels
A method of forming an integrated circuit device that includes a plurality of multiple gate FinFETs (MuGFETs) is disclosed. Fins of different crystal...
US-8,138,034 Flexible electret transducer assembly, speaker, and method for fabricating flexible electret transducer assembly
A flexible electret transducer assembly including an electrical backplate and a membrane made of an electret material is disclosed. A plurality of spacers is...
US-8,138,033 Semiconductor component and method of manufacture
A semiconductor component that includes a Schottky device, an edge termination structure, a non-Schottky semiconductor device, combinations thereof and a method...
US-8,138,032 Method for manufacturing thin film transistor having microcrystalline semiconductor film
A thin film transistor includes, over a substrate having an insulating surface, a gate insulating layer covering a gate electrode; a semiconductor layer which...
US-8,138,031 Semiconductor device and method of manufacturing semiconductor device
A method of manufacturing a semiconductor device includes forming a plurality of Fins including a semiconductor material on an insulation layer; forming gate...
US-8,138,030 Asymmetric finFET device with improved parasitic resistance and capacitance
A method for forming a fin field effect transistor (finFET) device includes, forming a fin structure in a substrate, forming a gate stack structure...
US-8,138,029 Structure and method having asymmetrical junction or reverse halo profile for semiconductor on insulator (SOI)...
A device and method is provided that in one embodiment provides a first semiconductor device including a first gate structure on a first channel region, in...
US-8,138,028 Method for manufacturing a phase change memory device with pillar bottom electrode
A method for manufacturing a mushroom-cell type phase change memory is based upon manufacturing a pillar of bottom electrode material upon a substrate including...
US-8,138,027 Optical semiconductor device having pre-molded leadframe with window and method therefor
A semiconductor device is made by providing a semiconductor die having an optically active area, providing a leadframe or pre-molded laminated substrate having...
US-8,138,026 Low cost lead-free preplated leadframe having improved adhesion and solderability
A leadframe with a structure made of a base metal (105), wherein the structure has a plurality of surfaces. On each of these surfaces are metal layers in a...
US-8,138,025 Microcap wafer bonding method and apparatus
A method of fabricating an apparatus including a sealed cavity and an apparatus embodying the method are disclosed. To fabricate the apparatus, a device chip...
US-8,138,024 Package system for shielding semiconductor dies from electromagnetic interference
A method of manufacturing a package system includes: providing a semiconductor die with a contact pad and a ground pad, mounting the semiconductor die on a...
US-8,138,023 Method for forming laminated structure and method for manufacturing semiconductor device using the method thereof
A method for manufacturing a semiconductor device includes the steps of (a) preparing a wafer including a first circuit formation region and a first surrounding...
US-8,138,022 Method of manufacturing semiconductor device
A first conductive member made of metal is provided over a first wiring substrate, which is a mounting substrate in the lower tier, a through hole is provided...
US-8,138,021 Apparatus for packaging semiconductor devices, packaged semiconductor components, methods of manufacturing...
Packaged semiconductor components, apparatus for packaging semiconductor devices, methods of packaging semiconductor devices, and methods of manufacturing...
US-8,138,020 Wafer level integrated interconnect decal and manufacturing method thereof
A wafer level integrated interconnect decal manufacturing method and wafer level integrated interconnect decal arrangement. In accordance with the technology...
US-8,138,019 Integrated (multilayer) circuits and process of producing the same
A process of forming a semiconductor integrated circuit that includes the steps of: forming at least a first element having a first pattern of conductive...
US-8,138,018 Manufacturing method of semiconductor device having underfill resin formed without void between semiconductor...
A manufacturing method of a semiconductor device includes a film state underfill resin adhering step wherein film state underfill resin in a semi-cured state is...
US-8,138,017 Integrated circuit package system with through semiconductor vias and method of manufacture thereof
A method of manufacture of an integrated circuit package system includes: providing a package substrate; mounting a first integrated circuit die, having through...
US-8,138,016 Large area integration of quartz resonators with electronics
Methods for integrating quartz-based resonators with electronics on a large area wafer through direct pick-and-place and flip-chip bonding or wafer-to-wafer...
US-8,138,015 Interconnection in multi-chip with interposers and bridges
A structure formation method. The method may include: attaching a substrate, a first interposer, a second interposer, and a first bridge together such that the...
US-8,138,014 Method of forming thin profile WLCSP with vertical interconnect over package footprint
A semiconductor wafer has a plurality of first semiconductor die. A second semiconductor die is mounted to the first semiconductor die. The active surface of...
US-8,138,013 Method and apparatus for forming a photodiode
A method for forming a photodiode is provided. The method comprises: providing a region of semiconductor material having a first surface and a second surface;...
US-8,138,012 Production of an improved color filter on a microelectronic imaging device comprising a cavity
A microelectronic device includes a color filter equipped with a plurality of filtering elements, including several filtering elements. The device includes at...
US-8,138,011 Radiation-detecting device and method of manufacturing same
A method of manufacturing a radiation-detecting device including spaced first columnar scintillators, second columnar scintillators which are located between...
US-8,138,010 Method for fabricating high density pillar structures by double patterning using positive photoresist
A method of making a semiconductor device includes forming a first photoresist layer over an underlying layer, patterning the first photoresist layer into a...
US-8,138,009 Method of fabricating thin film solar cell and apparatus for fabricating thin film solar cell
Disclosed is a method of fabricating a thin film solar cell including introducing a reaction solution into a reaction chamber, fixing a supporter onto a loader,...
US-8,138,008 Forming an oxide MEMS beam
Solutions for forming a semiconductor including an oxide MEMS beam are disclosed. In one embodiment, a method of forming a beam within a sealed cavity includes:...
US-8,138,007 MEMS device with stress isolation and method of fabrication
A MEMS device (20) with stress isolation includes elements (28, 30, 32) formed in a first structural layer (24) and elements (68, 70) formed in a second...
US-8,138,006 Method for producing a micromechanical component having a trench structure for backside contact
A method for manufacturing a micromechanical component is proposed. In this context, at least one trench structure having a depth less than the substrate...
US-8,138,005 Method for fabricating novel high-performance field-effect transistor biosensor based on conductive polymer...
Disclosed is a method for fabricating a high-performance field-effect transistor biosensor for diagnosing cancers using micro conductive polymer nanomaterials...
US-8,138,004 Photoelectric conversion device, manufacturing method thereof and semiconductor device
A manufacturing method of a photoelectric conversion device includes the following steps: forming a first electrode over a substrate; and, over the first...
US-8,138,003 Method of manufacturing nitride semiconductor substrates having a base substrate with parallel trenches
The present invention relates to a nitride semiconductor substrate such as gallium nitride substrate and a method for manufacturing the same. The present...
US-8,138,002 Semiconductor light-emitting element, fabrication method thereof, convex part formed on backing, and convex...
A convex part formation method of forming a convex part in parallel with a <110> direction of a backing on the backing having a {100} face as the top...
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