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Patent # Description
US-8,143,657 Discrete trap non-volatile multi-functional memory device
A multiple layer tunnel insulator is fabricated between a substrate and a discrete trap layer. The properties of the multiple layers determines the volatility...
US-8,143,656 High performance one-transistor DRAM cell device and manufacturing method thereof
Provided are a high-performance one-transistor floating-body DRAM cell device and a manufacturing method thereof. The one-transistor floating-body DRAM cell...
US-8,143,655 Trench schottky barrier diode with differential oxide thickness
A fabrication process for a trench Schottky diode with differential oxide thickness within the trenches includes forming a first nitride layer on a substrate...
US-8,143,654 Monolithic microwave integrated circuit with diamond layer
Embodiments of apparatuses, articles, methods, and systems for a monolithic microwave integrated circuit with a substrate having a diamond layer are generally...
US-8,143,653 Variable resistance memory device and system thereof
A phase-change random access memory device is provided. The phase-change random access memory device includes a global bit line connected to a write circuit and...
US-8,143,651 Nested and isolated transistors with reduced impedance difference
A processing layer, such as silicon, is formed on a metal silicide contact followed by a metal layer. The silicon and metal layers are annealed to increase the...
US-8,143,650 Semiconductor device having resistance layer formed on side surface of semiconductor layer
A semiconductor device 1 includes a substrate 2 having on a main surface thereof a central area and a peripheral area which surrounds the central area and is...
US-8,143,649 Compound semiconductor device and manufacturing method of the same
An i-GaN layer (electron transit layer), an n-GaN layer (compound semiconductor layer) formed over the i-GaN layer (electron transit layer), and a source...
US-8,143,648 Unipolar tunneling photodetector
A photodetector containing a 2DEG layer is disclosed.
US-8,143,647 Relaxed InGaN/AlGaN templates
A relaxed InGaN template employs a GaN or InGaN nucleation layer grown at low temperatures on a conventional base layer (e.g., sapphire). The nucleation layer...
US-8,143,646 Stacking fault and twin blocking barrier for integrating III-V on Si
A stacking fault and twin blocking barrier for forming a III-V device layer on a silicon substrate and the method of manufacture is described. Embodiments of...
US-8,143,645 Semiconductor device having a stacked multi structure that has layered insulated gate-type bipolar transistors
Each of first base regions of sequentially layered first IGBT and second IGBT has a peripheral section in the vicinity of the side face of the semiconductor...
US-8,143,644 Bipolar device compatible with CMOS process technology
A bipolar device includes: an emitter of a first polarity type constructed on a semiconductor substrate; a collector of the first polarity type constructed on...
US-8,143,643 Light device and fabrication method thereof
The present invention discloses a light device and a fabrication method thereof. An object of the present invention is to provide the light device and the...
US-8,143,642 Light emitting diode
The present disclosure provides a light emitting diode. The light emitting diode includes a substrate having a first surface and an opposite second surface. At...
US-8,143,641 Integrated-type LED and manufacturing method thereof
The present invention provides an integrated-type LED and method for manufacturing the same. This integrated-type LED comprises a base board which having a...
US-8,143,640 GaN compound semiconductor light emitting element and method of manufacturing the same
The present invention relates to a gallium nitride (GaN) compound semiconductor light emitting element (LED) and a method of manufacturing the same. The present...
US-8,143,639 Light emitting device and light emitting device package having the same
Disclosed are a light emitting device and a light emitting device package. The light emitting device includes a light emitting structure including a first...
US-8,143,638 Light emitting diode package structure and method thereof
An LED package structure includes a carrier substrate, a reflector and an LED chip. The reflector is disposed on the carrier substrate and includes a base, a...
US-8,143,637 Optically coupled device with an optical waveguide
An optically coupled device includes a light emitting element and a light receiving element which are electrically isolated from each other, and an optical...
US-8,143,636 Light-emitting device
This application discloses a light-emitting device comprising a light-emitting stack layer, a first transparent conductive layer disposed below the...
US-8,143,635 Gallium nitride compound semiconductor light-emitting device, method of manufacturing the same, and lamp...
The present invention provides a gallium nitride compound semiconductor light-emitting device that prevents an increase in the specific resistance of a p-type...
US-8,143,634 Light emitting diode package with a phosphor substrate
Provided is a light emitting diode (LED) package including a phosphor substrate; an LED chip mounted on the phosphor substrate; a circuit board mounted on the...
US-8,143,633 LED package structure and manufacturing process thereof
A process for manufacturing an LED package structure includes the following steps: (A) providing a T-shaped heat-sink block and an integral material sheet,...
US-8,143,632 Light emitting device and method for producing the light emitting device
To provide a light emitting device that does not experience a decline in radiant efficiency in use, enables luminous flux from LED elements to be increased, and...
US-8,143,631 Layered structure for use with high power light emitting diode systems
A layered structure for use with a high power light emitting diode system comprises an electrically insulating intermediate layer interconnecting a top layer...
US-8,143,630 Zinc sulfide substrates for group III-nitride epitaxy and group III-nitride devices
A semiconductor structure includes a substrate which may be formed from a ZnS single crystal of wurtzite (2H) structure with a predetermined crystal...
US-8,143,629 Lighting system and lighting device
An object of the invention is to provide a lighting device which can suppress luminance nonuniformity in a light emitting region when the lighting device has...
US-8,143,628 Flexible display and manufacturing method of the same
A flexible display of the present invention is an active matrix flexible display in which a TFT is provided for each pixel. In the flexible display, an adhesive...
US-8,143,627 Semiconductor device
In manufacturing a semiconductor device, static electricity is generated while contact holes are formed in an interlayer insulating film by dry etching. Damage...
US-8,143,626 CMOS image sensor having double gate insulator therein
A method for manufacturing a CMOS image sensor includes: preparing a semiconductor substrate incorporating therein a p-type epitaxial layer by epitaxially...
US-8,143,625 Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of...
There is provided a technique to form a single crystal semiconductor thin film or a substantially single crystal semiconductor thin film. A catalytic element...
US-8,143,624 Display device and method of manufacturing the same
A substrate comprising a thin-film-transistor (TFT) region, a pixel region, a gate-line region and a data-line region is provided. A transparent conductive...
US-8,143,623 Thin film transistor and manufacturing method thereof
A thin film transistor and a manufacturing method thereof are provided. An insulating pattern layer having at least one protrusion is formed on a substrate....
US-8,143,622 Display panel
A display panel including a first substrate, a second substrate opposite to the first substrate and a display medium between the first substrate and the second...
US-8,143,621 Active type display device
The display device according to an exemplary embodiment of the present invention includes an insulation substrate, a first signal line formed on the insulation...
US-8,143,620 System and method for adaptive classification of audio sources
Systems and methods for adaptively classifying audio sources are provided. In exemplary embodiments, at least one acoustic signal is received. One or more...
US-8,143,619 Methods of combinatorial processing for screening multiple samples on a semiconductor substrate
In embodiments of the current invention, methods of combinatorial processing and a test chip for use in these methods are described. These methods and test...
US-8,143,618 ZnO based semiconductor device and its manufacture method
A ZnO based semiconductor device includes: a lamination structure including a first semiconductor layer containing ZnO based semiconductor of a first...
US-8,143,617 Semiconductor device, semiconductor device manufacturing method and image display device
A semiconductor device having semiconductor elements disposed with higher density and a method for manufacturing the same are provided. An image display device...
US-8,143,616 Making a structure
A structure includes a surface and a non-equilibrium two-dimensional semiconductor micro structure on the surface.
US-8,143,615 Electron beam emitting device with a superlattice structure
A superlattice structure comprises a plurality of well layers made of first semiconductor and a plurality of barrier layers made of second semiconductor that...
US-8,143,614 GaN based light emitters with band-edge aligned carrier blocking layers
Band-edge aligned carrier blocking layers are introduced into wurtzite or zinc blend Gallium Nitride based diode laser and LEDs in order to prevent thermionic...
US-8,143,613 Organic light emitting device having multiple separate emissive layers
An organic light emitting device having multiple separate emissive layers is provided. Each emissive layer may define an exciton formation region, allowing...
US-8,143,612 Phase change memory cell in via array with self-aligned, self-converged bottom electrode and method for...
An array of "mushroom" style phase change memory cells is manufactured by forming a separation layer over an array of contacts, forming an isolation layer on...
US-8,143,611 Phase-change memory element, phase-change memory cell, vacuum processing apparatus, and phase-change memory...
A phase-change memory element includes a perovskite layer formed by a material having a perovskite structure, and a phase-change recording material layer which...
US-8,143,610 Semiconductor phase-change memory device
A semiconductor phase-change memory device comprises a data line disposed on a semiconductor substrate and a data storage structure disposed under the data line...
US-8,143,609 Three-terminal cascade switch for controlling static power consumption in integrated circuits
A switching circuit includes a plurality of three-terminal PCM switching devices connected between a voltage supply terminal and a sub-block of logic. Each of...
US-8,143,608 Package-on-package (POP) optical proximity sensor
Various embodiments of a package-on-package optical sensor comprising three distinct different packages are disclosed. The three different packages are combined...
US-8,143,607 Reconfigurable radiation shield
The disclosed invention proposes a reconfigurable radiation shield that, compared to art static shields, improves the protected volume/weight ratio. The...
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