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| Patent # | Description |
|---|---|
| US-8,143,657 |
Discrete trap non-volatile multi-functional memory device A multiple layer tunnel insulator is fabricated between a substrate and a discrete trap layer. The properties of the multiple layers determines the volatility... |
| US-8,143,656 |
High performance one-transistor DRAM cell device and manufacturing method
thereof Provided are a high-performance one-transistor floating-body DRAM cell device and a manufacturing method thereof. The one-transistor floating-body DRAM cell... |
| US-8,143,655 |
Trench schottky barrier diode with differential oxide thickness A fabrication process for a trench Schottky diode with differential oxide thickness within the trenches includes forming a first nitride layer on a substrate... |
| US-8,143,654 |
Monolithic microwave integrated circuit with diamond layer Embodiments of apparatuses, articles, methods, and systems for a monolithic microwave integrated circuit with a substrate having a diamond layer are generally... |
| US-8,143,653 |
Variable resistance memory device and system thereof A phase-change random access memory device is provided. The phase-change random access memory device includes a global bit line connected to a write circuit and... |
| US-8,143,651 |
Nested and isolated transistors with reduced impedance difference A processing layer, such as silicon, is formed on a metal silicide contact followed by a metal layer. The silicon and metal layers are annealed to increase the... |
| US-8,143,650 |
Semiconductor device having resistance layer formed on side surface of
semiconductor layer A semiconductor device 1 includes a substrate 2 having on a main surface thereof a central area and a peripheral area which surrounds the central area and is... |
| US-8,143,649 |
Compound semiconductor device and manufacturing method of the same An i-GaN layer (electron transit layer), an n-GaN layer (compound semiconductor layer) formed over the i-GaN layer (electron transit layer), and a source... |
| US-8,143,648 |
Unipolar tunneling photodetector A photodetector containing a 2DEG layer is disclosed. |
| US-8,143,647 |
Relaxed InGaN/AlGaN templates A relaxed InGaN template employs a GaN or InGaN nucleation layer grown at low temperatures on a conventional base layer (e.g., sapphire). The nucleation layer... |
| US-8,143,646 |
Stacking fault and twin blocking barrier for integrating III-V on Si A stacking fault and twin blocking barrier for forming a III-V device layer on a silicon substrate and the method of manufacture is described. Embodiments of... |
| US-8,143,645 |
Semiconductor device having a stacked multi structure that has layered
insulated gate-type bipolar transistors Each of first base regions of sequentially layered first IGBT and second IGBT has a peripheral section in the vicinity of the side face of the semiconductor... |
| US-8,143,644 |
Bipolar device compatible with CMOS process technology A bipolar device includes: an emitter of a first polarity type constructed on a semiconductor substrate; a collector of the first polarity type constructed on... |
| US-8,143,643 |
Light device and fabrication method thereof The present invention discloses a light device and a fabrication method thereof. An object of the present invention is to provide the light device and the... |
| US-8,143,642 |
Light emitting diode The present disclosure provides a light emitting diode. The light emitting diode includes a substrate having a first surface and an opposite second surface. At... |
| US-8,143,641 |
Integrated-type LED and manufacturing method thereof The present invention provides an integrated-type LED and method for manufacturing the same. This integrated-type LED comprises a base board which having a... |
| US-8,143,640 |
GaN compound semiconductor light emitting element and method of
manufacturing the same The present invention relates to a gallium nitride (GaN) compound semiconductor light emitting element (LED) and a method of manufacturing the same. The present... |
| US-8,143,639 |
Light emitting device and light emitting device package having the same Disclosed are a light emitting device and a light emitting device package. The light emitting device includes a light emitting structure including a first... |
| US-8,143,638 |
Light emitting diode package structure and method thereof An LED package structure includes a carrier substrate, a reflector and an LED chip. The reflector is disposed on the carrier substrate and includes a base, a... |
| US-8,143,637 |
Optically coupled device with an optical waveguide An optically coupled device includes a light emitting element and a light receiving element which are electrically isolated from each other, and an optical... |
| US-8,143,636 |
Light-emitting device This application discloses a light-emitting device comprising a light-emitting stack layer, a first transparent conductive layer disposed below the... |
| US-8,143,635 |
Gallium nitride compound semiconductor light-emitting device, method of
manufacturing the same, and lamp... The present invention provides a gallium nitride compound semiconductor light-emitting device that prevents an increase in the specific resistance of a p-type... |
| US-8,143,634 |
Light emitting diode package with a phosphor substrate Provided is a light emitting diode (LED) package including a phosphor substrate; an LED chip mounted on the phosphor substrate; a circuit board mounted on the... |
| US-8,143,633 |
LED package structure and manufacturing process thereof A process for manufacturing an LED package structure includes the following steps: (A) providing a T-shaped heat-sink block and an integral material sheet,... |
| US-8,143,632 |
Light emitting device and method for producing the light emitting device To provide a light emitting device that does not experience a decline in radiant efficiency in use, enables luminous flux from LED elements to be increased, and... |
| US-8,143,631 |
Layered structure for use with high power light emitting diode systems A layered structure for use with a high power light emitting diode system comprises an electrically insulating intermediate layer interconnecting a top layer... |
| US-8,143,630 |
Zinc sulfide substrates for group III-nitride epitaxy and group
III-nitride devices A semiconductor structure includes a substrate which may be formed from a ZnS single crystal of wurtzite (2H) structure with a predetermined crystal... |
| US-8,143,629 |
Lighting system and lighting device An object of the invention is to provide a lighting device which can suppress luminance nonuniformity in a light emitting region when the lighting device has... |
| US-8,143,628 |
Flexible display and manufacturing method of the same A flexible display of the present invention is an active matrix flexible display in which a TFT is provided for each pixel. In the flexible display, an adhesive... |
| US-8,143,627 |
Semiconductor device In manufacturing a semiconductor device, static electricity is generated while contact holes are formed in an interlayer insulating film by dry etching. Damage... |
| US-8,143,626 |
CMOS image sensor having double gate insulator therein A method for manufacturing a CMOS image sensor includes: preparing a semiconductor substrate incorporating therein a p-type epitaxial layer by epitaxially... |
| US-8,143,625 |
Crystalline semiconductor thin film, method of fabricating the same,
semiconductor device, and method of... There is provided a technique to form a single crystal semiconductor thin film or a substantially single crystal semiconductor thin film. A catalytic element... |
| US-8,143,624 |
Display device and method of manufacturing the same A substrate comprising a thin-film-transistor (TFT) region, a pixel region, a gate-line region and a data-line region is provided. A transparent conductive... |
| US-8,143,623 |
Thin film transistor and manufacturing method thereof A thin film transistor and a manufacturing method thereof are provided. An insulating pattern layer having at least one protrusion is formed on a substrate.... |
| US-8,143,622 |
Display panel A display panel including a first substrate, a second substrate opposite to the first substrate and a display medium between the first substrate and the second... |
| US-8,143,621 |
Active type display device The display device according to an exemplary embodiment of the present invention includes an insulation substrate, a first signal line formed on the insulation... |
| US-8,143,620 |
System and method for adaptive classification of audio sources Systems and methods for adaptively classifying audio sources are provided. In exemplary embodiments, at least one acoustic signal is received. One or more... |
| US-8,143,619 |
Methods of combinatorial processing for screening multiple samples on a
semiconductor substrate In embodiments of the current invention, methods of combinatorial processing and a test chip for use in these methods are described. These methods and test... |
| US-8,143,618 |
ZnO based semiconductor device and its manufacture method A ZnO based semiconductor device includes: a lamination structure including a first semiconductor layer containing ZnO based semiconductor of a first... |
| US-8,143,617 |
Semiconductor device, semiconductor device manufacturing method and image
display device A semiconductor device having semiconductor elements disposed with higher density and a method for manufacturing the same are provided. An image display device... |
| US-8,143,616 |
Making a structure A structure includes a surface and a non-equilibrium two-dimensional semiconductor micro structure on the surface. |
| US-8,143,615 |
Electron beam emitting device with a superlattice structure A superlattice structure comprises a plurality of well layers made of first semiconductor and a plurality of barrier layers made of second semiconductor that... |
| US-8,143,614 |
GaN based light emitters with band-edge aligned carrier blocking layers Band-edge aligned carrier blocking layers are introduced into wurtzite or zinc blend Gallium Nitride based diode laser and LEDs in order to prevent thermionic... |
| US-8,143,613 |
Organic light emitting device having multiple separate emissive layers An organic light emitting device having multiple separate emissive layers is provided. Each emissive layer may define an exciton formation region, allowing... |
| US-8,143,612 |
Phase change memory cell in via array with self-aligned, self-converged
bottom electrode and method for... An array of "mushroom" style phase change memory cells is manufactured by forming a separation layer over an array of contacts, forming an isolation layer on... |
| US-8,143,611 |
Phase-change memory element, phase-change memory cell, vacuum processing
apparatus, and phase-change memory... A phase-change memory element includes a perovskite layer formed by a material having a perovskite structure, and a phase-change recording material layer which... |
| US-8,143,610 |
Semiconductor phase-change memory device A semiconductor phase-change memory device comprises a data line disposed on a semiconductor substrate and a data storage structure disposed under the data line... |
| US-8,143,609 |
Three-terminal cascade switch for controlling static power consumption in
integrated circuits A switching circuit includes a plurality of three-terminal PCM switching devices connected between a voltage supply terminal and a sub-block of logic. Each of... |
| US-8,143,608 |
Package-on-package (POP) optical proximity sensor Various embodiments of a package-on-package optical sensor comprising three distinct different packages are disclosed. The three different packages are combined... |
| US-8,143,607 |
Reconfigurable radiation shield The disclosed invention proposes a reconfigurable radiation shield that, compared to art static shields, improves the protected volume/weight ratio. The... |
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