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| Patent # | Description |
|---|---|
| US-8,148,752 |
Field effect transistor A field effect transistor includes a semiconductor stack formed on a substrate, and having a first nitride semiconductor layer and a second nitride... |
| US-8,148,751 |
Group III nitride semiconductor wafer and group III nitride semiconductor
device A group III nitride semiconductor device and a group III nitride semiconductor wafer are provided. The group III nitride semiconductor device has a channel... |
| US-8,148,750 |
Transistor device having asymmetric embedded strain elements and related
manufacturing method Semiconductor transistor devices and related fabrication methods are provided. An exemplary transistor device includes a layer of semiconductor material having... |
| US-8,148,749 |
Trench-shielded semiconductor device Various structures and methods for improving the performance of trench-shielded power semiconductor devices and the like are described. An exemplary device... |
| US-8,148,748 |
Adjustable field effect rectifier An Adjustable Field Effect Rectifier uses aspects of MOSFET structure together with an adjustment pocket or region to result in a device that functions reliably... |
| US-8,148,747 |
Semiconductor chip assembly with post/base/cap heat spreader A semiconductor chip assembly includes a semiconductor device, a heat spreader, a conductive trace and an adhesive. The semiconductor device is electrically... |
| US-8,148,746 |
Semiconductor light emitting device A semiconductor light emitting device (A1) includes a case (1) and a plurality of semiconductor light emitting elements (3) arranged in the case. The case (1)... |
| US-8,148,745 |
Semiconductor light emitting module and method for manufacturing the same A light emitting module includes a semiconductor light source, a first lead with a bonding pad to which the light source is attached, and a second lead spaced... |
| US-8,148,744 |
Semiconductor light emitting device A semiconductor light emitting device including a substrate, an electrode and a light emitting region is provided. The substrate may have protruding portions... |
| US-8,148,743 |
Semiconductor device including semiconductor circuit made from
semiconductor element and manufacturing method... In the present invention, a semiconductor film is formed through a sputtering method, and then, the semiconductor film is crystallized. After the... |
| US-8,148,742 |
Type II broadband or polychromatic LEDs An LED is provided comprising two or more light-emitting Type II interfaces wherein at least two of the Type II interfaces differ in transition energy by at... |
| US-8,148,741 |
Polychromatic LED's and related semiconductor devices A semiconductor device is provided comprising a first potential well located within a pn junction and a second potential well not located within a pn junction.... |
| US-8,148,740 |
Semiconductor light emitting device and method of manufacturing the same Provided are a semiconductor light emitting device and a method of manufacturing the same. The semiconductor light emitting layer comprises a first conductive... |
| US-8,148,739 |
LED package structure An LED package structure includes a heatsink slug, a positive-electrode frame, a negative-electrode frame, and an LED module electrically connected with the... |
| US-8,148,738 |
Semiconductor device having an element mounted on a substrate and an
electrical component connected to the element In a semiconductor device 100, a light emitting element 120 has been mounted on an upper plane of a semiconductor substrate 102. In an impurity diffusion region... |
| US-8,148,737 |
Light emitting device, light emitting device package and lighting system Disclosed are a light emitting device, a light emitting device package and a lighting system. The light emitting device of the embodiment includes a light... |
| US-8,148,736 |
Flip chip type light-emitting element In a flip chip type light-emitting element of the present invention, an n type contact electrode 14 is formed on an n layer 11 exposed in a comb-tooth shape, a... |
| US-8,148,735 |
Optical communication module An infrared data communication module (A1) includes a substrate (1) consisting of a first layer (1A) and a second layer (1B), where the first layer is formed... |
| US-8,148,734 |
Light emitting device having a lateral passivation layer Provided are a light emitting device, a light emitting device package, and a lighting system. The light emitting device includes a light emitting structure... |
| US-8,148,733 |
Vertical LED with current guiding structure Techniques for controlling current flow in semiconductor devices, such as LEDs are provided. For some embodiments, a current guiding structure may be provided... |
| US-8,148,732 |
Carbon-containing semiconductor substrate A light-emitting diode (LED) device is provided. The LED device is formed on a substrate having a carbon-containing layer. Carbon atoms are introduced into the... |
| US-8,148,731 |
Films and structures for metal oxide semiconductor light emitting devices
and methods Semiconductor films and structures, such as films and structures utilizing zinc oxide or other metal oxides, and processes for forming such films and... |
| US-8,148,730 |
Semiconductor device and method for manufacturing semiconductor device A first resist pattern is formed by exposure using a first multi-tone photomask, and a first conductive layer, a first insulating layer, a first semiconductor... |
| US-8,148,729 |
Organic light emitting device An organic light emitting device is disclosed. The organic light emitting device includes a substrate, a display unit that is positioned on the substrate and... |
| US-8,148,728 |
Method for fabrication of a semiconductor device and structure A method for fabrication of 3D semiconductor devices utilizing a layer transfer and steps for forming transistors on top of a pre-fabricated semiconductor... |
| US-8,148,727 |
Display device having oxide thin film transistor and fabrication method
thereof A display device including an oxide thin film transistor (TFT) is disclosed. A nitride-based gate insulating layer of a gate pad area is etched when an oxide... |
| US-8,148,726 |
Display device and manufacturing method thereof A display device which has thin film transistors, wherein a semiconductor layer includes a first layer, second layers and third layers, the first layer has a... |
| US-8,148,725 |
Light-emitting device and repairing method thereof A light-emitting device including a plurality of light-emitting units is provided. Each of the light-emitting units includes a first common electrode layer, a... |
| US-8,148,724 |
Liquid crystal display device and method of manufacturing the same A liquid crystal display device includes a gate line and a data line on a substrate crossing each other to define a pixel region; a thin film transistor in the... |
| US-8,148,723 |
Light-emitting device and manufacturing method thereof A first conductive film, a first insulating film, a semiconductor film, an impurity semiconductor film, and a second conductive film are stacked in this order... |
| US-8,148,722 |
Method of manufacturing P-type ZnO semiconductor layer using atomic layer
deposition and thin film transistor... Provided are a method of manufacturing a transparent N-doped p-type ZnO semiconductor layer using a surface chemical reaction between precursors containing... |
| US-8,148,721 |
Bottom gate type thin film transistor, method of manufacturing the same,
and display apparatus Provided is a bottom gate type thin film transistor including on a substrate (1) a gate electrode (2), a first insulating film (3) as a gate insulating film, an... |
| US-8,148,720 |
Organic thin film transistor and organic thin film light-emitting
transistor An organic thin film transistor including a substrate having thereon at least three terminals of a gate electrode, a source electrode and a drain electrode, an... |
| US-8,148,719 |
Organic light emitting display device and fabricating method thereof An organic light emitting display includes a substrate, a semiconductor layer arranged on the substrate, an organic light emitting diode arranged on the... |
| US-8,148,718 |
Low voltage transistors The invention provides a transistor having a substrate, a structure supported by the substrate including a source, drain, gate, and channel, wherein the source... |
| US-8,148,717 |
Manufacturing method for semiconductor device and semiconductor device A manufacturing method for semiconductor device includes: forming an opening, in a surface of a semiconductor substrate being composed of first atom, the... |
| US-8,148,716 |
Group III nitride semiconductor optical device, epitaxial substrate, and
method of making group III nitride... A group III nitride semiconductor optical device includes: a substrate comprising a group III nitride semiconductor; a first group-III nitride semiconductor... |
| US-8,148,715 |
Solid state charge qubit device This invention concerns a quantum device, suitable for quantum computing, based on dopant atoms located in a solid semiconductor or insulator substrate. In... |
| US-8,148,714 |
Light-emitting device and method for producing light emitting device A method for producing a light-emitting device, includes: performing, on a first substrate made of III-V group compound semiconductor, crystal growth of a... |
| US-8,148,713 |
Method for fabrication of semipolar (Al, In, Ga, B)N based light emitting
diodes A yellow Light Emitting Diode (LED) with a peak emission wavelength in the range 560-580 nm is disclosed. The LED is grown on one or more III-nitride-based... |
| US-8,148,712 |
Group III nitride compound semiconductor stacked structure An object of the present invention is to obtain a group III nitride compound semiconductor stacked structure where a group III nitride compound semiconductor... |
| US-8,148,711 |
Nonvolatile memory element, manufacturing method thereof, and nonvolatile
semiconductor apparatus using... A nonvolatile semiconductor apparatus of the present invention comprises (103), a second electrode (105), and a resistance variable layer (104) disposed between... |
| US-8,148,710 |
Phase-change memory device using a variable resistance structure A phase-change memory device including a first contact region and a second contact region formed on a semiconductor substrate. A first insulating layer with a... |
| US-8,148,709 |
Magnetic device with integrated magneto-resistive stack This magnetic device integrates a magneto-resistive stack, the stack comprising at least two layers made out of a ferromagnetic material, separated from each... |
| US-8,148,708 |
Resistive memory device and method of fabricating the same A resistive memory device includes a first conductive line on a substrate, a vertical selection diode comprising a nanowire or a nanotube and being arranged... |
| US-8,148,707 |
Ovonic threshold switch film composition for TSLAGS material A chalcogenide alloy that optimizes operating parameters of an ovonic threshold switch includes an atomic percentage of arsenic in the range of 9 to 39, an... |
| US-8,148,706 |
Pinned-contact oscillating liquid lens and imaging system An oscillating liquid lens and imaging system and method employing the lens are provided. The liquid lens includes a substrate with a channel opening extending... |
| US-8,148,705 |
Method and apparatus for inspecting defects of patterns formed on a hard
disk medium If an inspection method for inspecting a patterned medium is intended for the nanoimprint process control, it is necessary to measure a correct shape of each... |
| US-8,148,704 |
Printing plate registration using a camera A method and apparatus for determining the alignment of printing plate (14) mounted on an imaging drum (12), and applying an image to a printing plate while... |
| US-8,148,703 |
Apparatus for performing radiation treatment An apparatus is provided for determining and monitoring parameters of a radiation treatment. The apparatus produces a first image of a region of a patient body... |
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