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Patent # Description
US-8,148,752 Field effect transistor
A field effect transistor includes a semiconductor stack formed on a substrate, and having a first nitride semiconductor layer and a second nitride...
US-8,148,751 Group III nitride semiconductor wafer and group III nitride semiconductor device
A group III nitride semiconductor device and a group III nitride semiconductor wafer are provided. The group III nitride semiconductor device has a channel...
US-8,148,750 Transistor device having asymmetric embedded strain elements and related manufacturing method
Semiconductor transistor devices and related fabrication methods are provided. An exemplary transistor device includes a layer of semiconductor material having...
US-8,148,749 Trench-shielded semiconductor device
Various structures and methods for improving the performance of trench-shielded power semiconductor devices and the like are described. An exemplary device...
US-8,148,748 Adjustable field effect rectifier
An Adjustable Field Effect Rectifier uses aspects of MOSFET structure together with an adjustment pocket or region to result in a device that functions reliably...
US-8,148,747 Semiconductor chip assembly with post/base/cap heat spreader
A semiconductor chip assembly includes a semiconductor device, a heat spreader, a conductive trace and an adhesive. The semiconductor device is electrically...
US-8,148,746 Semiconductor light emitting device
A semiconductor light emitting device (A1) includes a case (1) and a plurality of semiconductor light emitting elements (3) arranged in the case. The case (1)...
US-8,148,745 Semiconductor light emitting module and method for manufacturing the same
A light emitting module includes a semiconductor light source, a first lead with a bonding pad to which the light source is attached, and a second lead spaced...
US-8,148,744 Semiconductor light emitting device
A semiconductor light emitting device including a substrate, an electrode and a light emitting region is provided. The substrate may have protruding portions...
US-8,148,743 Semiconductor device including semiconductor circuit made from semiconductor element and manufacturing method...
In the present invention, a semiconductor film is formed through a sputtering method, and then, the semiconductor film is crystallized. After the...
US-8,148,742 Type II broadband or polychromatic LEDs
An LED is provided comprising two or more light-emitting Type II interfaces wherein at least two of the Type II interfaces differ in transition energy by at...
US-8,148,741 Polychromatic LED's and related semiconductor devices
A semiconductor device is provided comprising a first potential well located within a pn junction and a second potential well not located within a pn junction....
US-8,148,740 Semiconductor light emitting device and method of manufacturing the same
Provided are a semiconductor light emitting device and a method of manufacturing the same. The semiconductor light emitting layer comprises a first conductive...
US-8,148,739 LED package structure
An LED package structure includes a heatsink slug, a positive-electrode frame, a negative-electrode frame, and an LED module electrically connected with the...
US-8,148,738 Semiconductor device having an element mounted on a substrate and an electrical component connected to the element
In a semiconductor device 100, a light emitting element 120 has been mounted on an upper plane of a semiconductor substrate 102. In an impurity diffusion region...
US-8,148,737 Light emitting device, light emitting device package and lighting system
Disclosed are a light emitting device, a light emitting device package and a lighting system. The light emitting device of the embodiment includes a light...
US-8,148,736 Flip chip type light-emitting element
In a flip chip type light-emitting element of the present invention, an n type contact electrode 14 is formed on an n layer 11 exposed in a comb-tooth shape, a...
US-8,148,735 Optical communication module
An infrared data communication module (A1) includes a substrate (1) consisting of a first layer (1A) and a second layer (1B), where the first layer is formed...
US-8,148,734 Light emitting device having a lateral passivation layer
Provided are a light emitting device, a light emitting device package, and a lighting system. The light emitting device includes a light emitting structure...
US-8,148,733 Vertical LED with current guiding structure
Techniques for controlling current flow in semiconductor devices, such as LEDs are provided. For some embodiments, a current guiding structure may be provided...
US-8,148,732 Carbon-containing semiconductor substrate
A light-emitting diode (LED) device is provided. The LED device is formed on a substrate having a carbon-containing layer. Carbon atoms are introduced into the...
US-8,148,731 Films and structures for metal oxide semiconductor light emitting devices and methods
Semiconductor films and structures, such as films and structures utilizing zinc oxide or other metal oxides, and processes for forming such films and...
US-8,148,730 Semiconductor device and method for manufacturing semiconductor device
A first resist pattern is formed by exposure using a first multi-tone photomask, and a first conductive layer, a first insulating layer, a first semiconductor...
US-8,148,729 Organic light emitting device
An organic light emitting device is disclosed. The organic light emitting device includes a substrate, a display unit that is positioned on the substrate and...
US-8,148,728 Method for fabrication of a semiconductor device and structure
A method for fabrication of 3D semiconductor devices utilizing a layer transfer and steps for forming transistors on top of a pre-fabricated semiconductor...
US-8,148,727 Display device having oxide thin film transistor and fabrication method thereof
A display device including an oxide thin film transistor (TFT) is disclosed. A nitride-based gate insulating layer of a gate pad area is etched when an oxide...
US-8,148,726 Display device and manufacturing method thereof
A display device which has thin film transistors, wherein a semiconductor layer includes a first layer, second layers and third layers, the first layer has a...
US-8,148,725 Light-emitting device and repairing method thereof
A light-emitting device including a plurality of light-emitting units is provided. Each of the light-emitting units includes a first common electrode layer, a...
US-8,148,724 Liquid crystal display device and method of manufacturing the same
A liquid crystal display device includes a gate line and a data line on a substrate crossing each other to define a pixel region; a thin film transistor in the...
US-8,148,723 Light-emitting device and manufacturing method thereof
A first conductive film, a first insulating film, a semiconductor film, an impurity semiconductor film, and a second conductive film are stacked in this order...
US-8,148,722 Method of manufacturing P-type ZnO semiconductor layer using atomic layer deposition and thin film transistor...
Provided are a method of manufacturing a transparent N-doped p-type ZnO semiconductor layer using a surface chemical reaction between precursors containing...
US-8,148,721 Bottom gate type thin film transistor, method of manufacturing the same, and display apparatus
Provided is a bottom gate type thin film transistor including on a substrate (1) a gate electrode (2), a first insulating film (3) as a gate insulating film, an...
US-8,148,720 Organic thin film transistor and organic thin film light-emitting transistor
An organic thin film transistor including a substrate having thereon at least three terminals of a gate electrode, a source electrode and a drain electrode, an...
US-8,148,719 Organic light emitting display device and fabricating method thereof
An organic light emitting display includes a substrate, a semiconductor layer arranged on the substrate, an organic light emitting diode arranged on the...
US-8,148,718 Low voltage transistors
The invention provides a transistor having a substrate, a structure supported by the substrate including a source, drain, gate, and channel, wherein the source...
US-8,148,717 Manufacturing method for semiconductor device and semiconductor device
A manufacturing method for semiconductor device includes: forming an opening, in a surface of a semiconductor substrate being composed of first atom, the...
US-8,148,716 Group III nitride semiconductor optical device, epitaxial substrate, and method of making group III nitride...
A group III nitride semiconductor optical device includes: a substrate comprising a group III nitride semiconductor; a first group-III nitride semiconductor...
US-8,148,715 Solid state charge qubit device
This invention concerns a quantum device, suitable for quantum computing, based on dopant atoms located in a solid semiconductor or insulator substrate. In...
US-8,148,714 Light-emitting device and method for producing light emitting device
A method for producing a light-emitting device, includes: performing, on a first substrate made of III-V group compound semiconductor, crystal growth of a...
US-8,148,713 Method for fabrication of semipolar (Al, In, Ga, B)N based light emitting diodes
A yellow Light Emitting Diode (LED) with a peak emission wavelength in the range 560-580 nm is disclosed. The LED is grown on one or more III-nitride-based...
US-8,148,712 Group III nitride compound semiconductor stacked structure
An object of the present invention is to obtain a group III nitride compound semiconductor stacked structure where a group III nitride compound semiconductor...
US-8,148,711 Nonvolatile memory element, manufacturing method thereof, and nonvolatile semiconductor apparatus using...
A nonvolatile semiconductor apparatus of the present invention comprises (103), a second electrode (105), and a resistance variable layer (104) disposed between...
US-8,148,710 Phase-change memory device using a variable resistance structure
A phase-change memory device including a first contact region and a second contact region formed on a semiconductor substrate. A first insulating layer with a...
US-8,148,709 Magnetic device with integrated magneto-resistive stack
This magnetic device integrates a magneto-resistive stack, the stack comprising at least two layers made out of a ferromagnetic material, separated from each...
US-8,148,708 Resistive memory device and method of fabricating the same
A resistive memory device includes a first conductive line on a substrate, a vertical selection diode comprising a nanowire or a nanotube and being arranged...
US-8,148,707 Ovonic threshold switch film composition for TSLAGS material
A chalcogenide alloy that optimizes operating parameters of an ovonic threshold switch includes an atomic percentage of arsenic in the range of 9 to 39, an...
US-8,148,706 Pinned-contact oscillating liquid lens and imaging system
An oscillating liquid lens and imaging system and method employing the lens are provided. The liquid lens includes a substrate with a channel opening extending...
US-8,148,705 Method and apparatus for inspecting defects of patterns formed on a hard disk medium
If an inspection method for inspecting a patterned medium is intended for the nanoimprint process control, it is necessary to measure a correct shape of each...
US-8,148,704 Printing plate registration using a camera
A method and apparatus for determining the alignment of printing plate (14) mounted on an imaging drum (12), and applying an image to a printing plate while...
US-8,148,703 Apparatus for performing radiation treatment
An apparatus is provided for determining and monitoring parameters of a radiation treatment. The apparatus produces a first image of a region of a patient body...
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