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Patent # Description
US-8,159,013 Semiconductor integrated circuit device having a dummy metal wiring line
There is provided a layout structure of a semiconductor integrated circuit capable of preventing the thinning of a metal wiring line close to a cell boundary...
US-8,159,012 Semiconductor device including insulating layer of cubic system or tetragonal system
Provided is a semiconductor device including an insulating layer of a cubic system or a tetragonal system, having good electrical characteristics. The...
US-8,159,011 Complementary metal oxide semiconductor (CMOS) image sensor with extended pixel dynamic range incorporating...
A charge transfer transistor includes: a first diffusion region and a second diffusion region; a gate for controlling a charge transfer from the first diffusion...
US-8,159,010 Solid-state image pick-up device and imaging system using the same
The present invention provides a solid-state image pick-up device without shading in the dark state, and capable of making a dynamic range and a S/N high....
US-8,159,009 Semiconductor device having strain material
A semiconductor device having strain material is disclosed. In a particular embodiment, the semiconductor device includes a first cell including a first gate...
US-8,159,008 Method of fabricating a trench-generated transistor structure
Trench-generated transistor structures, methods for fabricating transistors using a trench defined in a semiconductor-on-insulator (SOI) wafer, design...
US-8,159,007 Providing current to compensate for spurious current while receiving signals through a line
Circuits, methods, and systems are disclosed in which a current is provided to compensate for spurious current while receiving signals through a line. For...
US-8,159,006 Semiconductor device having a triple gate transistor and method for manufacturing the same
In a semiconductor capable of reducing NBTI and a method for manufacturing the same, a multi-gate transistor includes an active region, gate dielectric,...
US-8,159,005 Image sensor
An image sensor and manufacturing method thereof are provided. The image sensor can include a readout circuitry, an interconnection, a second interlayer...
US-8,159,004 Compound semiconductor device having dopant concentration gradient
A semiconductor device includes a first compound semiconductor layer having a two-dimensional carrier gas channel, a second compound semiconductor layer which...
US-8,159,003 III-nitride wafer and devices formed in a III-nitride wafer
A III-nitride device having a support substrate that may include a first silicon body, a second silicon body, an insulation body interposed between the first...
US-8,159,002 Heterostructure device and associated method
A heterostructure device includes a semiconductor multi-layer structure that has a first region, a second region and a third region. The first region is coupled...
US-8,159,001 Graded junction high voltage semiconductor device
A graded junction space decreasing an implant concentration gradient between n-well and p-well regions of a semiconductor device is provided for enhancing...
US-8,159,000 LED package having an array of light emitting cells coupled in series
Disclosed is a light emitting diode (LED) package having an array of light emitting cells coupled in series. The LED package comprises a package body and an LED...
US-8,158,999 Reinforced chip package structure
A reinforced chip package structure includes a light emitting element, a base, and a package member. The base has a base deck and a jutting bearing deck on the...
US-8,158,998 High-reflectivity and low-defect density LED structure
The present invention discloses a high-reflectivity and low-defect density LED structure. A patterned dielectric layer is embedded in a sapphire substrate via...
US-8,158,997 Optical element package and method of manufacturing the same
An optical element package includes: an optical element in a form of a chip, and a lens resin having a convex lens surface covering an optical functional...
US-8,158,996 Semiconductor light emitting device package
A semiconductor light emitting device package according to an embodiment comprising: a package body comprising a groove section; an electrode in the groove...
US-8,158,995 Optoelectronic semiconductor chip
An optoelectronic semiconductor chip is disclosed which emits electromagnetic radiation from its front side (7) during operation, comprising a semiconductor...
US-8,158,994 GaN LED element and light emitting device having a structure to reduce light absorption by a pad electrode...
A first conductive film 104-1 of a light-transmissive conductive oxide film 104 and a positive pad electrode 105 are electrically connected through a second...
US-8,158,993 Nitride semiconductor crystal with surface texture
A nitride semiconductor light emitting device is formed by: forming a resist pattern on a first nitride semiconductor layer formed on a substrate, the resist...
US-8,158,992 Self-light-emitting device and method of manufacturing the same
Failure light emission of an EL element due to failure film formation of an organic EL material in an electrode hole 46 is improved. By forming the organic EL...
US-8,158,991 Light-emitting element, light-emitting device, electronic device, and lighting device
Light-emitting elements in which an increase of driving voltage can be suppressed are provided. Light-emitting devices whose power consumption is reduced by...
US-8,158,990 Light emitting device using GaN LED chip
A light emitting device is constituted by flip-chip mounting a GaN-based LED chip. The GaN-based LED chip includes a light-transmissive substrate and a...
US-8,158,989 Organic light emitting diode display
An organic light emitting diode display includes a plurality of pixels. Each pixel includes a light emitting element and a driving transistor coupled to the...
US-8,158,988 Interlevel conductive light shield
A CMOS image sensor pixel includes a conductive light shield, which is located between a first dielectric layer and a second dielectric layer. At least one via...
US-8,158,987 Light-emitting diode and method for fabrication thereof
A transparent-substrate light-emitting diode (10) has a light-emitting layer (133) made of a compound semiconductor, wherein the area (A) of a light-extracting...
US-8,158,986 System for display images and fabrication method thereof
A system for displaying images including a display panel and a fabrication method thereof are provided. The display panel includes a substrate having a first,...
US-8,158,985 Thin film transistor devices with different electrical characteristics and method for fabricating the same
A system for displaying images. The system includes a thin film transistor (TFT) device including a first insulating layer covering a first region and a second...
US-8,158,984 Thin film transistor, method of fabricating the same, and organic light emitting diode display device including...
A thin film transistor (TFT), including a crystalline semiconductor pattern on a substrate, a gate insulating layer on the crystalline semiconductor pattern,...
US-8,158,983 Semiconducting sheet
A substrate-free semiconducting sheet has an array of semiconducting elements dispersed in a matrix material. The matrix material is bonded to the edge surfaces...
US-8,158,982 Polysilicon thin film transistor device with gate electrode thinner than gate line
A polysilicon thin film transistor device includes a gate metal pattern including a gate electrode and a gate line formed on a substrate, the gate metal pattern...
US-8,158,981 Radiation-sensitive composition, method of forming silica-based coating film, silica-based coating film,...
The present invention provides a photosensitive resin composition comprising a component (a): a siloxane resin obtained by hydrolyzing and condensing a silane...
US-8,158,980 Semiconductor device having a pixel matrix circuit that includes a pixel TFT and a storage capacitor
In a CMOS circuit formed on a substrate 100, a subordinate gate wiring line (a first wiring line) 102a and main gate wiring line (a second wiring line) 113a are...
US-8,158,979 Organic light emitting display and method of manufacturing the same
An organic light emitting display is disclosed. The display comprises a transistor with an active layer comprising an oxide semiconductor material. The oxide...
US-8,158,978 Inverter, logic circuit including an inverter and methods of fabricating the same
An inverter, a logic circuit including the inverter and method of fabricating the same are provided. The inverter includes a load transistor of a depletion...
US-8,158,976 Thin-film transistor and method of manufacturing the same
Example embodiments relate to thin-film transistors (TFT) and methods for fabricating the same. A thin-film transistor according to example embodiments may...
US-8,158,975 Semiconductor device and manufacturing method thereof
Electric characteristics and reliability of a thin film transistor are impaired by diffusion of an impurity element into a channel region. The present invention...
US-8,158,974 Semiconductor device, polycrystalline semiconductor thin film, process for producing polycrystalline...
An object of the present invention is to provide a novel semiconductor device which is excellent in stability, uniformity, reproducibility, heat resistance,...
US-8,158,973 Organic memory array with ferroelectric field-effect transistor pixels
An organic non-volatile memory array including multiple pixels and associated signal lines that are disposed on and between a substrate, a single ferroelectric...
US-8,158,972 Organic photosensitive optoelectronic devices containing tetra-azaporphyrins
Embodiments of the present invention provide an organic photosensitive optoelectronic device comprising at least one tetra-azaporphyrin compound of formula (I)...
US-8,158,971 Highly efficient organic light-emitting device using substrate or electrode having nanosized half-spherical...
The present invention provides a transparent substance formed with a plurality of continuous half-spherical convexes having a diameter of 25.about.1,000 nm on...
US-8,158,970 Organic luminescence transistor device and manufacturing method thereof
The invention is an organic luminescence transistor device including: a substrate; an assistance electrode layer provided on a side of an upper surface of the...
US-8,158,969 Organic light emitting display device
The present invention is intended to provide a top emission type organic light emitting display device which prevents the organic film from being oxidized...
US-8,158,968 Methods of forming carbon nanotubes architectures and composites with high electrical and thermal...
Methods and associated structures of forming microelectronic devices are described. Those methods may include method of forming a layered nanotube structure...
US-8,158,967 Integrated memory arrays
Some embodiments include methods of forming memory arrays. A stack of semiconductor material plates may be patterned to subdivide the plates into pieces....
US-8,158,966 Phase change memory device having protective layer and method for manufacturing the same
A phase change memory device includes a plurality of phase change structures, each with a phase change material layer, disposed on a semiconductor substrate, a...
US-8,158,965 Heating center PCRAM structure and methods for making
Memory devices are described along with manufacturing methods. A memory device as described herein includes a bottom electrode and a first phase change layer...
US-8,158,964 Schottky diode switch and memory units containing the same
A switching element that includes a first semiconductor layer, the first semiconductor layer having a first portion and a second portion; a second semiconductor...
US-8,158,963 Programmable resistive RAM and manufacturing method
Programmable resistive RAM cells have a resistance that depends on the size of the contacts. Manufacturing methods and integrated circuits for lowered contact...
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