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| Patent # | Description |
|---|---|
| US-8,158,560 |
Insecticidal arylpyrroline compounds The present invention relates to novel arylpyrrolines having the formula (I) and their use as insecticides, as well as to processes for the preparation of the... |
| US-8,158,559 |
Herbicidal combination comprising dimethoxytriazinyl-substituted
difluoromethanesulfonylanilides The present invention relates to a herbicide combination comprising components (A) and (B) where (A) denotes one or more compounds or salts thereof from the... |
| US-8,158,558 |
Herbicide combinations comprising specific sulfonylureas Herbicide combinations comprising an amount of components (A) and (B) have improved herbicidal action: (A) one or more herbicides of the formula (I) or salts... |
| US-8,158,557 |
Storage-stable formulations of sulfonamides The present invention relates to storage-stable solid water-dispersible formulations comprising one or more herbicidally active compounds from the group of the... |
| US-8,158,556 |
Activated carbon cryogels and related methods Carbon cryogels, methods for making the carbon cryogels, methods for storing a gas using the carbon cryogels, and devices for storing and delivering a gas using... |
| US-8,158,554 |
High heat-resistant catalyst and manufacturing method thereof A high heat-resistant catalyst includes: noble metal particles; first compounds which contact the noble metal particles and suppress movement of the noble metal... |
| US-8,158,553 |
Photocatalyst dispersion element, method for producing photocatalyst
dispersion element, photocatalyst body,... A photocatalyst dispersion element includes: a photocatalytic material; a solvent; and an ion additive. The ion additive generates a cation having a smaller ion... |
| US-8,158,552 |
Exhaust gas purifying catalyst An exhaust gas purifying catalyst exhibiting high purification performance in the Hot range is provided. The exhaust gas purifying catalyst has a catalyst... |
| US-8,158,551 |
Catalyst compositions for the treatment of vehicular exhaust gases
comprise zirconium oxide and cerium oxide,... Catalyst compositions for the treatment of vehicular exhaust gases are based on zirconium and cerium oxides, have a cerium oxide content of at most 50% by... |
| US-8,158,550 |
Multilayer catalyst, process for the preparation and use thereof in the
partial oxidation of hydrocarbons in... The invention relates to a multilayer catalyst for the partial oxidation of hydrocarbons in gaseous phase, comprising a monolithic ceramic or metallic substrate... |
| US-8,158,549 |
Catalysts for fluoroolefins hydrogenation A support of metal oxyfluoride or metal halide for a metal-based hydrogenation catalyst useful in hydrogenating fluoroolefins is provided. |
| US-8,158,548 |
Electrocatalysts based on mono/plurimetallic carbon nitrides for fuel
cells fueled with hydrogen The invention describes the preparation of electrocatalysts, both anodic (aimed at the oxidation of the fuel) and cathodic (aimed at the reduction of the... |
| US-8,158,547 |
Absorbent An absorbent of ZSM-5 zeolite ion-exchanged with copper ion, characterized in that at least 60% or more of the copper sites in the copper ion-exchanged ZSM-5... |
| US-8,158,546 |
Transparent aqua-based nano sol-gel composition and method of applying the
same The present invention relates to a transparent aqua-based nano sol-gel composition and method of applying the same to transparent substrates without decreasing... |
| US-8,158,545 |
Methods, systems, and devices for deep desulfurization of fuel gases A highly effective and regenerable method, system and device that enables the desulfurization of warm fuel gases by passing these warm gasses over metal-based... |
| US-8,158,544 |
Yttria sintered body and component used for plasma processing apparatus To provide a high purity Yttria sintered bodies having a high strength, a low dielectric loss and high plasma corrosion resistance of halogen gas during wide... |
| US-8,158,543 |
Fining agents for silicate glasses A fining agent for reducing the concentration of seeds or bubbles in a silicate glass. The fining agent includes at least one inorganic compound, such as a... |
| US-8,158,542 |
SiO.sub.2 slurry for the production of quartz glass as well as the
application of the slurry A known SiO.sub.2 slurry for the production of quartz glass contains a dispersion liquid and amorphous SiO.sub.2 particles with particle sizes to a maximum of... |
| US-8,158,541 |
Optical glass, precision press-molding preform and optical element Provided is an optically uniform and high-quality optical glass that is free from the occurrence of striae when a precision press-molding preform is produced... |
| US-8,158,540 |
Environmentally resistant ballistic composite based on a nitrile rubber
binder Ballistic resistant fabrics and articles that retain superior ballistic resistance performance after exposure to liquids such as sea water and organic solvents,... |
| US-8,158,539 |
Heat deflection/high strength panel compositions The following disclosure provides a structural mat for manufacturing a moldable structural hardboard body. The structural mat has a nucleated/coupled binder and... |
| US-8,158,538 |
Single electron transistor operating at room temperature and manufacturing
method for same The present invention relates to a single-electron transistor (SET) operating at room temperature and a method of manufacturing the same, and to be specific, to... |
| US-8,158,537 |
Chalcogenide absorber layers for photovoltaic applications and methods of
manufacturing the same In one example embodiment, a method includes depositing one or more thin-film layers onto a substrate. More particularly, at least one of the thin-film layers... |
| US-8,158,536 |
Low dielectric constant films and manufacturing method thereof, as well as
electronic parts using the same While a fine porous diamond particle film has been known as a high heat resistant and low dielectric constant film and also has high mechanical strength and... |
| US-8,158,535 |
Method for forming insulating film and method for manufacturing
semiconductor device A method for forming an insulating film includes a step of preparing a substrate, which is to be processed and has silicon exposed on the surface, a step of... |
| US-8,158,534 |
Reduction of defects formed on the surface of a silicon oxynitride film Methods for reducing defects on the surface of a silicon oxynitride film are disclosed, in one embodiment, the methods include, forming a silicon oxynitride... |
| US-8,158,533 |
Piezoelectric tactile sensor A piezoelectric tactile sensor comprises a piezoelectric membrane with a top surface, a transducer of elastic column with a bottom end surface to overlay over... |
| US-8,158,532 |
Topography reduction and control by selective accelerator removal Plating accelerator is applied selectively to a substantially-unfilled wide (e.g., low-aspect-ratio feature cavity. Then, plating of metal is conducted to fill... |
| US-8,158,531 |
Method of manufacturing solar cell and plasma treatment apparatus This method of manufacturing a solar cell includes a step of forming a photoelectric conversion layer on a substrate with a plasma treatment apparatus including... |
| US-8,158,530 |
Methods for retaining metal-comprising materials using liquid chemistry
dispense systems from which oxygen has... Methods for fabricating a semiconductor device from a semiconductor substrate having a metal-comprising material and a disposable material are provided. In... |
| US-8,158,529 |
Method for forming active pillar of vertical channel transistor A method for forming an active pillar of a vertical channel transistor includes forming a hard mask pattern on a substrate, etching vertically the substrate... |
| US-8,158,528 |
Method for forming pattern of semiconductor device A method for forming a pattern of a semiconductor device comprises: forming a stacked film including an underlying layer, an antireflection film and a... |
| US-8,158,527 |
Semiconductor device fabrication method using multiple resist patterns A resist pattern (5) is formed in a dimension of a limitation of an exposure resolution over a hard mask material film (4) over a work film (3). The material... |
| US-8,158,526 |
Endpoint detection for photomask etching Apparatus and method for endpoint detection are provided for photomask etching. The apparatus provides a plasma etch chamber with a substrate support member.... |
| US-8,158,525 |
Plasma etching method and apparatus, and method of manufacturing liquid
ejection head The plasma etching method includes: an etching step of placing, on a stage in a chamber, a substrate in which a prescribed mask pattern is formed by a... |
| US-8,158,524 |
Line width roughness control with arc layer open To achieve the foregoing and in accordance with the purpose of the present invention a method for etching an etch layer disposed below an antireflective coating... |
| US-8,158,523 |
Quantification of hydrophobic and hydrophilic properties of materials A non-destructive and simple analytical method is provided which allows in situ monitoring of plasma damage during the plasma processing such as resist... |
| US-8,158,522 |
Method of forming a deep trench in a substrate Methods of forming deep trenches in substrates are described. A method includes providing a substrate with a patterned film disposed thereon, the patterned film... |
| US-8,158,521 |
Two step post-deposition treatment of ILD layer for a lower dielectric
constant and improved mechanical properties A method of lowering the dielectric constant of an organosilicon low k dielectric layer while improving the hardness and thermal stability is provided. A... |
| US-8,158,520 |
Method of forming a via structure dual damascene structure for the
manufacture of semiconductor integrated... An integrated circuit device structure with a novel contact feature. The structure includes a substrate, a dielectric layer overlying the substrate, and a metal... |
| US-8,158,519 |
Method of manufacturing non-volatile memory cell using self-aligned metal
silicide In a method of manufacturing a non-volatile memory cell, a self-aligned metal silicide is used in place of a conventional tungsten metal layer to form a... |
| US-8,158,518 |
Methods of making metal silicide contacts, interconnects, and/or seed
layers Methods of forming contacts (and optionally, local interconnects) using an ink comprising a silicide-forming metal, electrical devices such as diodes and/or... |
| US-8,158,517 |
Method for manufacturing wiring substrate, thin film transistor, display
device and television device An object of the present invention is to provide a method for manufacturing a display device by improving the utilization efficiency of materials and... |
| US-8,158,516 |
Method for manufacturing semiconductor device According to one embodiment, a method is described for manufacturing a semiconductor device. The method can form a conductive layer including tungsten on a... |
| US-8,158,515 |
Method of making 3D integrated circuits A method and structure of connecting at least two integrated circuits in a 3D arrangement by a through silicon via which simultaneously connects a connection... |
| US-8,158,514 |
Method for producing vertical electrical contact connections in
semiconductor wafers The invention relates to a method for producing vertical electrical connections in semiconductor wafers, the method including the following steps: application... |
| US-8,158,513 |
Integrated circuit system employing backside energy source for electrical
contact formation A method for manufacturing an integrated circuit system includes: providing a first material; forming a second material over a first side of the first material;... |
| US-8,158,512 |
Atomic layer deposition method and semiconductor device formed by the same There is provided a method of manufacturing a semiconductor device, including the following steps: flowing a first precursor gas to the semiconductor substrate... |
| US-8,158,511 |
Method of depositing a uniform barrier layer and metal seed layer with
reduced overhang over a plurality of... A method of depositing a metal seed layer with underlying barrier layer on a wafer substrate comprising a plurality of recessed device features. A first portion... |
| US-8,158,510 |
Semiconductor device and method of forming IPD on molded substrate A semiconductor device is made by depositing an encapsulant material between first and second plates of a chase mold to form a molded substrate. A first... |
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