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Magnetoresistive element, magnetic memory, and method of manufacturing
According to one embodiment, a magnetoresistive element includes first and second magnetic layers, a first nonmagnetic layer, a conductive layer. The first and...
Electronic devices having semiconductor memory units having magnetic
tunnel junction element
Disclosed are electronic devices comprising a semiconductor memory unit capable of reducing the switching current of a variable resistance element for switching...
Vertical hall effect sensor
In one aspect, a vertical Hall effect sensor includes a semiconductor wafer having a first conductivity type and a plurality of semiconductive electrodes...
Vertical hall device with electrical 180 degree symmetry
A vertical Hall device indicative of a magnetic field parallel to a surface of a substrate comprises first, second, third and fourth terminals. The vertical...
Method of implementing a ferroelectric tunnel junction, device comprising
a ferroelectric tunnel junction and...
The invention relates to a method of implementing a ferroelectric tunnel junction, said junction comprising to films each forming an electrode-type conductive...
Method of manufacturing an ultrasonic transducer electrode assembly
A method of fabricating an ultrasound transducer includes providing a substrate having a first side and a second side opposite the first side. A bottom...
The present invention relates to a ceramic comprising (or consisting essentially of) a solid solution containing Bi, K, Ti and Fe (and optionally Pb) which...
Nano-piezoelectric generator and method of manufacturing the same
A nano-piezoelectric generator includes a first electrode and a second electrode, at least one nano-piezoelectric unit, formed of a semiconductor piezoelectric...
Apparatus and method for generating sinusoidal waves, and system for
driving piezo actuator using the same
An apparatus for generating sinusoidal waves may include: a look-up table storage unit storing a look-up table including a plurality of sampling points...
Energy harvester with improved heat flow arrangement
A thermoelectric energy harvesting system may include a thermoelectric generator that may produce a voltage in response to a temperature difference across the...
Packaging photon building blocks having only top side connections in a
molded interconnect structure
Standardized photon building blocks are packaged in molded interconnect structures to form a variety of LED array products. No electrical conductors pass...
Flip chip package structure and wafer level package structure
A flip chip package structure includes a package base and a LED chip. The package base includes a first substrate, a first and a second electrodes disposed on...
A light-emitting device comprises: a supporting member having a top surface with a first surface area and a bottom surface with a second surface area; a first...
A lead 1 includes a die-bonding portion 11 with an opening 11a penetrating in a thickness direction. Another lead 2 is spaced from the lead 1. An LED unit 3...
Light-emission element assembly and method of manufacturing same, as well
A light-emission element assembly includes: a light-emission element; a mold section in which the light-emission element is molded; a pad section protruding...
Light emitting device, method for manufacturing light emitting device, and
In a light emitting device, a first lead has a first terminal part that is contiguous with a first connector. The first terminal part includes a first convex...
Light emitting device having vertical structure and package thereof
A light emitting device having a vertical structure and a package thereof, which are capable of damping impact generated in a substrate separation process, and...
Provided is a lighting device, comprising: a light source module comprising: at least one light source disposed on a printed circuit board; and a resin layer...
Light emitting device and method for manufacturing the same
According to one embodiment, a light emitting device includes a first base section, a light emitting section, and a first wiring section. The light emitting...
Encapsulating sheet and optical semiconductor element device
An encapsulating sheet is formed from an encapsulating resin composition which contains an encapsulating resin and silicone microparticles, and the mixing ratio...
Method for fabricating light emitting diode (LED) dice with wavelength
A method for fabricating light emitting diode (LED) dice includes the step of providing a wavelength conversion layer on a substrate on an adhesive layer...
Sulfur-containing phosphor coated with ZnO compound
Provided is a novel coated phosphor capable of effectively suppressing the adverse effects of hydrogen sulfide gas generated by the reaction between a...
Semiconductor light emitting device
The present disclosure relates to a semiconductor light emitting device, which comprises a plurality of semiconductor layers; a contact area where a first...
Method for producing a conversion lamina and conversion lamina
A method for producing at least one conversion lamina for a radiation-emitting semiconductor component is specified. A base material including a conversion...
Apparatus, method to enhance color contrast in phosphor-based solid state
The efficiency and color contrast of a lighting device may be improved by using wavelength shifting material, such as a phosphor, to absorb less desired...
Light emitting device and light emitting device package
Disclosed are a light emitting device and a light emitting device package. The light emitting device includes a first electrode, a light emitting structure...
Light-emitting device with reflecting electrode
An electrode structure for effectively improving the stability of a semiconductor LED includes a reflecting layer capable of current spreading. In such an...
Metallic contact for optoelectronic semiconductor device
A contact to a semiconductor layer in a light emitting structure is provided. The contact can include a plurality of contact areas formed of a metal and...
Near UV light emitting device
Disclosed is a near UV light emitting device. The light emitting device includes an n-type contact layer, a p-type contact layer, an active area of a...
Gallium nitride self-supported substrate, light-emitting device and
manufacturing method therefor
Provided is a self-supporting gallium nitride substrate useful as an alternative material for a gallium nitride single crystal substrate, which is inexpensive...
LED with multilayer light extractor having a refractive index gradient
The light emitting device includes a first semiconductor layer, a second semiconductor layer and an active layer provided between the first semiconductor layer...
Semiconductor light emitting device and manufacturing method thereof
A semiconductor light emitting device includes a supporting substrate, a light emitting layer including a nitride semiconductor, and a nitride multilayer film....
Semiconductor light device and manufacturing method for the same
Provided is a semiconductor light device comprising a semiconductor substrate having a first conduction type; a first cladding layer having the first conduction...
Nanowire structure and method for manufacturing the same
A light emitting diode (LED) structure includes a plurality of devices arranged side by side on a support layer. Each device includes a first conductivity type...
Semiconductor chip that emits polarized radiation
A semiconductor chip that emits radiation includes a semiconductor body having an active zone, which emits unpolarized radiation having a first radiation...
Epitaxy structure of a light emitting element having III-nitride quantum
An epitaxy structure of a light emitting element includes a gallium nitride substrate, an N-type gallium nitride layer, a quantum well unit, and a P-type...
Semiconductor light emitting device
There is provided a semiconductor light emitting device including a first conductivity-type semiconductor base layer and a plurality of light emitting...
Nitride light emitting diode and fabrication method thereof
An epitaxial structure of light emitting diode with a current modulation layer, and more specifically, a high-resistivity material is injected to change the...
P-contact with more uniform injection and lower optical loss
The current distribution across the p-layer (130) of a semiconductor device is modified by purposely inhibiting current flow through the p-layer (130) in...
Nitride semiconductor device, nitride semiconductor wafer, and method for
manufacturing nitride semiconductor layer
According to one embodiment, a nitride semiconductor device includes a first layer and a functional layer. The first layer is formed on an amorphous layer,...
Optoelectronic semiconductor device
An optoelectronic semiconductor device includes a first light source that emits green, white or white-green light and includes a semiconductor chip that emits...
Light-emitting diode fabrication method
A LED fabrication method includes: providing a substrate; forming a low-temperature Al.sub.xGa.sub.1-xN (0.ltoreq.x.ltoreq.1) layer over the growth substrate;...
Light emitting element
Embodiments of the present invention include a light emitting element, a method for manufacturing the light-emitting element according to one embodiment of the...
Growing an improved P-GaN layer of an LED through pressure ramping
The present disclosure involves an apparatus. The apparatus includes a photonic die structure that includes a light-emitting diode (LED) die. The LED die is a...
Method of cutting light-emitting device chip wafer by using laser scribing
Methods of cutting a light-emitting device chip wafer by using a laser scribing process. The method includes: preparing a wafer that has a plurality of...
Multi-color light emitting devices with compositionally graded cladding
group III-nitride layers grown on...
A light emitting device includes a substrate, multiple n-type layers, and multiple p-type layers. The n-type layers and the p-type layers each include a group...
Semiconductor light emitting device, semiconductor wafer with first and
second portions with different lattice...
According to one embodiment, a semiconductor light emitting device includes a light emitting layer and a first semiconductor layer. The first semiconductor...
Light emitting heterostructure with partially relaxed semiconductor layer
A light emitting heterostructure including a partially relaxed semiconductor layer is provided. The partially relaxed semiconductor layer can be included as a...
Semiconductor structure and method for forming the same
A semiconductor structure and a method for forming the same are provided. The semiconductor structure comprises: a substrate (100); and a plurality of zigzag...
Structure with a metal silicide transparent conductive electrode and a
method of forming the structure
Disclosed are embodiments of a structure with a metal silicide transparent conductive electrode, which is commercially viable, robust and safe to use and, thus,...