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Patent # Description
US-9,312,375 III-Nitride device with solderable front metal
Some exemplary embodiments of a III-nitride power device including a HEMT with multiple interconnect metal layers and a solderable front metal structure using...
US-9,312,374 Integrated power device with III-nitride half bridges
A semiconductor device that includes a plurality of isolated half-bridges formed in a common semiconductor die.
US-9,312,373 Compound semiconductor device and manufacturing method of the same
An electrode (109) insulated from a compound semiconductor layer (102) and being in contact with an electrode (101) and a compound semiconductor layer (103) is...
US-9,312,372 Semiconductor device
A semiconductor device in which an element region including at least an IGBT region is formed on a semiconductor substrate is presented. The IGBT region...
US-9,312,371 Bipolar junction transistors and methods of fabrication
A structure, including a bipolar junction transistor and method of fabrication thereof, is provided herein. The bipolar junction transistor includes: a...
US-9,312,370 Bipolar transistor with extrinsic base region and methods of fabrication
The present disclosure relates to integrated circuit (IC) structures and methods of forming the same. An IC structure according to the present disclosure can...
US-9,312,369 Bipolar transistor structure and a method of manufacturing a bipolar transistor structure
According to various embodiments, a bipolar transistor structure may include: a substrate; a collector region in the substrate; a base region disposed over the...
US-9,312,368 Graphene device including separated junction contacts and method of manufacturing the same
A graphene device including separated junction contacts and a method of manufacturing the same are disclosed. The graphene device is a field effect transistor...
US-9,312,367 FinFET with a silicon germanium alloy channel and method of fabrication thereof
A gate cavity is formed exposing a portion of a silicon fin by removing a sacrificial gate structure that straddles the silicon fin. An epitaxial silicon...
US-9,312,366 Processing of integrated circuit for metal gate replacement
Embodiments of the present disclosure provide a method of processing an integrated circuit (IC) structure for metal gate replacement, the method comprising:...
US-9,312,365 Manufacturing method of non-planar FET
The present invention provides a non-planar FET which includes a substrate, a fin structure, a sub spacer, a gate, a dielectric layer and a source/drain region....
US-9,312,364 finFET with dielectric isolation after gate module for improved source and drain region epitaxial growth
A method forming a semiconductor device that in one embodiment includes forming a gate structure on a channel region of fin structures, and forming a flowable...
US-9,312,363 Multi-fin device and method of making same
A multiple-fin device includes a substrate and a plurality of fins formed on the substrate. Source and drain regions are formed in the respective fins. A...
US-9,312,362 Manufacture of a variation resistant metal-oxide-semiconductor field effect transistor (MOSFET)
Variation resistant metal-oxide-semiconductor field effect transistors (MOSFETs) are manufactured using a high-K, metal-gate `channel-last` process. A cavity is...
US-9,312,361 Semiconductor devices and methods for manufacturing the same
Semiconductor devices and methods for manufacturing the same are disclosed. In one embodiment, the method comprises: forming a first shielding layer on a...
US-9,312,360 FinFET with epitaxial source and drain regions and dielectric isolated channel region
A semiconductor device is provided that includes a pedestal of an insulating material present over at least one layer of a semiconductor material, and at least...
US-9,312,359 Semiconductor structure and fabrication method thereof
A semiconductor structure includes a gate structure disposed on a substrate and having an outer spacer, a recess disposed in the substrate and adjacent to the...
US-9,312,358 Partially-blocked well implant to improve diode ideality with SiGe anode
A method of manufacturing a semiconductor device is disclosed. A p-type substrate is doped to form an N-well in a selected portion of a p-type substrate...
US-9,312,357 Semiconductor device and method for manufacturing the same
A semiconductor device and a method for manufacturing the same. The method includes steps hereinafter. A substrate is provided with a first dielectric layer...
US-9,312,356 Semiconductor device and manufacturing method thereof
The semiconductor device includes a gate electrode, a first interlayer dielectric, a first mask layer, a second mask layer and a second interlayer dielectric....
US-9,312,355 Stripe structures and fabrication method thereof
A method is provided for fabricating stripe structures. The method includes providing a substrate; and forming a to-be-etched layer on the substrate. The method...
US-9,312,354 Contact etch stop layers of a field effect transistor
The disclosure relates to a field effect transistor. An exemplary structure for a field effect transistor comprises a substrate; a source region and a drain...
US-9,312,353 Double gate type thin film transistor and organic light emitting diode display including the same
A double gate type thin film transistor includes a first electrode on a substrate; a gate insulating layer on the first gate electrode; a semiconductor layer on...
US-9,312,352 Field-effect transistor and fabricating method thereof
A method for fabricating a field-effect transistor is provided. The method includes: forming a gate dielectric layer and a barrier layer on a substrate in...
US-9,312,351 Floating gate flash cell with extended floating gate
Provided is a floating gate flash cell and method for forming the same. The flash includes two floating gate transistors and a common source area therebetween....
US-9,312,350 Semiconductor device and manufacturing method thereof
A semiconductor device includes a first semiconductor layer formed of a nitride semiconductor on a substrate, a second semiconductor layer formed of a nitride...
US-9,312,349 Semiconductor device and method for manufacturing semiconductor device
To provide a semiconductor device in which the threshold value is controlled. Furthermore, to provide a semiconductor device in which a deterioration in...
US-9,312,348 Ultra high voltage semiconductor device with electrostatic discharge capabilities
A semiconductor device comprises a semiconductor substrate, a first layer over the semiconductor substrate, and a drain region in the first layer. The drain...
US-9,312,347 Semiconductor device with multiple space-charge control electrodes
A circuit including a semiconductor device having a set of space-charge control electrodes is provided. The set of space-charge control electrodes is located...
US-9,312,346 Semiconductor device with a charge carrier compensation structure and method for the production of a...
A semiconductor device has a cell field with drift zones of a first type of conductivity and charge carrier compensation zones of a second type of conductivity...
US-9,312,345 High-resistive silicon substrate with a reduced radio frequency loss for a radio-frequency integrated passive...
The application relates to a high-resistivity silicon substrate (100) with a reduced radio frequency loss for a radio frequency integrated passive device. The...
US-9,312,344 Methods for forming semiconductor materials in STI trenches
A method includes annealing a silicon region in an environment including hydrogen (H.sub.2) and hydrogen chloride (HCl) as process gases. After the step of...
US-9,312,343 Transistors with semiconductor interconnection layers and semiconductor channel layers of different...
A transistor may include a semiconductor drift layer of a first semiconductor material and a semiconductor channel layer on the semiconductor drift layer. The...
US-9,312,342 Generation of highly N-type, defect passivated transition metal oxides using plasma fluorine insertion
A new composition of matter is disclosed wherein oxygen vacancies in a semiconducting transition metal oxide such as titanium dioxide are filled with a halogen...
US-9,312,341 Compound semiconductor device, power source device and high frequency amplifier and method for manufacturing...
A compound semiconductor device includes: a substrate; and a compound semiconductor lamination structure formed over the substrate, the compound semiconductor...
US-9,312,340 Group III nitride composite substrate and method for manufacturing the same, laminated group III nitride...
A group III nitride composite substrate with a diameter of 75 mm or more includes a support substrate having a thickness t.sub.s of 0.1 mm or more and 1 mm or...
US-9,312,339 Strain relaxation using metal materials and related structures
Methods of fabricating semiconductor structures include forming a plurality of openings extending through a semiconductor material and at least partially...
US-9,312,338 Semiconductor device containing chalcogen atoms and method of manufacturing
A semiconductor device includes a single crystalline semiconductor body with a first surface and a second surface parallel to the first surface. The...
US-9,312,337 Semiconductor device
This device includes a first base layer of a first conduction type. A second base-layer of a second conduction type is provided above the first base-layer. A...
US-9,312,336 MOSFET device with reduced breakdown voltage
A semiconductor device includes a drain region, an epitaxial layer overlaying the drain region, and an active region. The active region includes: a body...
US-9,312,335 Lateral PNP bipolar transistor with narrow trench emitter
A lateral bipolar transistor includes trench emitter and trench collector regions to form ultra-narrow emitter regions, thereby improving emitter efficiency....
US-9,312,334 Semiconductor component
A semiconductor component is disclosed. One embodiment provides a semiconductor body having a cell region with at least one zone of a first conduction type and...
US-9,312,333 Resonator having terminals and a method for manufacturing the resonator
A resonator and a method for manufacturing a resonator are provided. The method may include doping a wafer, and forming on the wafer a substrate, a drain...
US-9,312,332 Semiconductor device and method for manufacturing the same
A semiconductor device includes a first semiconductor region of a second conductivity type selectively formed in the main surface of the semiconductor substrate...
US-9,312,331 Semiconductor device
A semiconductor device includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type provided...
US-9,312,330 Super-junction semiconductor device
Provision of a super-junction semiconductor device capable of reducing rises in transient on-resistance at the time of repeated switching operation. A...
US-9,312,329 Semiconductor device
A first impurity diffusion region is provided within a semiconductor substrate, a second impurity diffusion region is provided within the first impurity...
US-9,312,328 Small pitch patterns and fabrication method
A method is provided for fabricating small pitch patterns. The method includes providing a semiconductor substrate, and forming a target material layer having a...
US-9,312,327 Semiconductor device
A semiconductor device having a capacitor which includes a first electrode electrically coupled to a transistor and a second electrode separate from the first...
US-9,312,326 Metal-insulator-metal capacitor structures
Capacitor structures capable of providing both low-voltage capacitors and high-voltage capacitors are described herein. In one embodiment, a capacitor structure...
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