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Self-limiting silicide in highly scaled fin technology
A method of forming a metal semiconductor alloy on a fin structure that includes forming a semiconductor material layer of a polycrystalline crystal structure...
Semiconductor device and method for making same
One or more embodiments relate to a semiconductor device that includes: a conductive layer including a sidewall; a conductive capping layer disposed over the...
Semiconductor devices having through-electrodes and methods for
fabricating the same
The present inventive concepts provide semiconductor devices and methods for fabricating the same. The method includes forming an inter-metal dielectric layer...
Metal on elongated contacts
An integrated circuit containing elongated contacts, including elongated contacts which connect to at least three active areas and/or MOS gates, and including...
Interconnection of several levels of a stack of supports for electronic
Method for producing a microelectronic device formed from a stack of supports (W) each provided with one or more electronic components (C) and comprising a...
Air gap structure integration using a processing system
A method for forming an air gap structure in an integrated layer stack includes dry etching a mold layer disposed on the stack in a processing system under...
Air-gap structure formation with ultra low-k dielectric layer on PECVD
Methods for reducing the k value of a layer using air gaps and devices produced by said methods are disclosed herein. Methods disclosed herein can include...
Method for manufacturing composite wafers
This invention provides a method for manufacturing composite wafers in which at least two composite wafers can be obtained from one donor wafer, and in which...
Group III nitride composite substrate and method for manufacturing the
same, and method for manufacturing group...
A group III nitride composite substrate includes a group III nitride film and a support substrate formed from a material different in chemical composition from...
Localized region of isolated silicon over dielectric mesa
An integrated circuit is formed by forming an isolation mesa over a single crystal substrate which includes silicon, and forming a first epitaxial layer on the...
Impurity-doped layer formation apparatus and electrostatic chuck
An electrostatic chuck protection method includes providing an exposed chuck surface with a protective surface for preventing adherence of foreign materials...
Dicing sheet and a production method of a semiconductor chip
A dicing sheet includes a base, an intermediate layer on one face of the base, and an pressure sensitive adhesive layer provided on the intermediate layer and...
Accommodating device for retaining wafers
A receiving means for receiving and mounting of wafers. The receiving means includes a mounting surface. A mounting means is provided for mounting a wafer on...
Wafer suction method, wafer suction stage, and wafer suction system
A method of attaching a wafer by suction, includes a step of mounting a wafer on a right arm and a left arm of a transfer jig, moving the transfer jig toward a...
Transport apparatus and exposure apparatus
A substrate is transported between a first space and a second space, which are separated by a partition wall, through an opening portion formed in the partition...
Article transport vehicle with linkage mechanism
An article transport vehicle is provided which can prevent a lid from falling from the container gripped by grip portions and which can prevent increase in the...
A front opening wafer container suitable for large wafers such as 450 mm utilizes componentry with separate fasteners to lock the componentry together in an...
Thin film transistor
A thin film transistor includes a gate electrode; a gate insulating layer which is provided to cover the gate electrode; a semiconductor layer which is provided...
High-throughput semiconductor-processing apparatus equipped with multiple
A wafer-processing apparatus includes: eight or ten reactors with identical capacity for processing wafers on the same plane, constituting four or five discrete...
CVD apparatus for improved film thickness non-uniformity and particle
Embodiments of the invention provide improved apparatus for depositing layers on substrates, such as by chemical vapor deposition (CVD). The inventive apparatus...
Substrate processing system, transfer module, substrate processing method,
and method for manufacturing...
A substrate processing system is provided with: a first transfer unit, which extends from a loader module to a first processing chamber for processing...
Recirculation substrate container purging systems and methods
Methods and systems to reduce the consumption of purge gas for semiconductor substrate containers. The recirculation purging system recycles purge gas back to...
Method of manufacturing semiconductor device and method of manufacturing
electronic device including an...
A method of manufacturing a semiconductor device, includes: providing a first adhesive layer on a support member; providing a film on the first adhesive layer;...
Semiconductor device and method of forming a metallurgical interconnection
between a chip and a substrate in a...
A method for forming metallurgical interconnections and polymer adhesion of a flip chip to a substrate includes providing a chip having a set of bumps formed on...
Method for forming chip-on-wafer assembly
A device includes a bottom chip and an active top die bonded to the bottom chip. A dummy die is attached to the bottom chip. The dummy die is electrically...
Method of packaging a semiconductor device
A method of packaging a semiconductor device includes forming an insulating layer over a semiconductor device, wherein the semiconductor device has a contact...
Phase changing on-chip thermal heat sink
A method of forming an on-chip heat sink includes forming a device on a substrate. The method also includes forming a plurality of insulator layers over the...
Manufacturing method of a thin film transistor
Embodiments of the invention provide a thin film transistor and a manufacturing method thereof and a display device. The thin film transistor includes a gate...
Conformal nitridation of one or more fin-type transistor layers
Fin-type transistor fabrication methods and structures are provided having one or more nitrided conformal layers, to improve reliability of the semiconductor...
Composition for forming a silicon-containing resist under layer film and
A composition for forming a silicon-containing resist under layer film includes a silicon-containing compound which is obtained by hydrolysis, condensation or...
Formation of isolation surrounding well implantation
Embodiments of present invention provide a method of making well isolations. The method includes forming a hard-mask layer on top of said substrate; forming a...
Chemical mechanical polishing method and apparatus
Methods for polishing a semiconductor wafer using a pad resurfacing arm and an apparatus therefor are disclosed. Embodiments may include providing a...
Vapor phase chemical mechanical polishing of magnetic recording disks
A method for polishing a carbon overcoat of a magnetic media that results in a smooth surface free of carbon cluster debris. The method involves forming a...
Semiconductor structures having low resistance paths throughout a wafer
A semiconductor structure with low resistance conduction paths and methods of manufacture are disclosed. The method includes forming at least one low resistance...
Semiconductor element having conductive damascene structures extending
perpendicular to doping strips, and...
A semiconductor element and a manufacturing method of the same are provided. The semiconductor element includes a substrate, a plurality of doping strips, a...
Method for forming gate dielectric layer
A method for forming a semiconductor device is provided. The method includes providing a semiconductor substrate. The method includes forming a buffer layer...
Reduction of native oxides by annealing in reducing gas or plasma
Native oxide growth on germanium, silicon germanium, and InGaAs undesirably affects CET (capacitive equivalent thickness) and EOT (effective oxide thickness) of...
Replacement metal gate stack for diffusion prevention
A method of forming a semiconductor structure includes depositing a gate dielectric layer lining a recess of a gate structure formed on a substrate with a first...
Method of manufacturing semiconductor devices including generating and
annealing radiation-induced crystal defects
The generation of auxiliary crystal defects is induced in a semiconductor substrate. Then the semiconductor substrate is pre-annealed at a temperature above a...
Nonvolatile semiconductor memory device and method for manufacturing same
A nonvolatile semiconductor memory device, includes: a stacked structural unit including a plurality of insulating films alternately stacked with a plurality of...
Wafer structure for electronic integrated circuit manufacturing
A bonded wafer structure having a handle wafer, a device wafer, and an interface region with an abrupt transition between the conductivity profile of the device...
Method of forming high-density arrays of nanostructures
A method for forming nanostructures includes bonding a flexible substrate to a crystalline semiconductor layer having a two-dimensional material formed on a...
Selective epitaxial formation of semiconductive films
Epitaxial layers are selectively formed in semiconductor windows by a cyclical process of repeated blanket deposition and selective etching. The blanket...
Surface doping and bandgap tunability in hydrogenated graphene
A method of introducing a bandgap in single layer graphite on a SiO.sub.2 substrate comprising the steps of preparing graphene flakes and CVD grown graphene...
Group III-V substrate material with particular crystallographic features
and methods of making
A method of forming a semiconductor substrate including providing a base substrate including a semiconductor material, and forming a first semiconductor layer...
Compound semiconductor integrated circuit and method to fabricate same
A structure includes a substrate having a surface and a first transistor disposed in a first region supported by the surface of the substrate. The first...
Method for producing semiconductor apparatus substrate
A method for producing a semiconductor apparatus substrate includes steps of: forming silicon-containing film having silicon content of 1% by mass or more and...
Method for processing gate dielectric layer deposited on germanium-based
or group III-V compound-based substrate
The present invention discloses a method for processing a gate dielectric layer deposited on a germanium-based or Group III-V compound-based substrate,...
Cyclic deposition method for thin film formation, semiconductor
manufacturing method, and semiconductor device
A cyclic deposition method for thin film formation includes forming a silicon thin film on an object by injecting a silicon precursor into a chamber in which...
Methods of fabricating gate insulating layers in gate trenches and methods
of fabricating semiconductor devices...
A method of fabricating a semiconductor device may include: forming a field region defining an active region in a substrate; forming a gate trench in which the...