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Patent # Description
US-9,318,573 Field effect transistor having germanium nanorod and method of manufacturing the same
A field effect transistor having at least one Ge nanorod and a method of manufacturing the field effect transistor are provided. The field effect transistor may...
US-9,318,572 Ambipolar synaptic devices
Device architectures based on trapping and de-trapping holes or electrons and/or recombination of both types of carriers are obtained by carrier trapping either...
US-9,318,571 Gate structure and method for trimming spacers
A gate structure includes a gate disposed on a substrate, a first spacer disposed on the substrate and surrounding the gate and a second spacer disposed on the...
US-9,318,570 Semiconductor device
Provided is a semiconductor device, including a substrate including a device isolation layer and an active region isolated by the device isolation layer; a...
US-9,318,569 Unit cells of nonvolatile memory devices, cell arrays of nonvolatile memory devices, and methods of fabricating...
Unit cells including a substrate having an active region, a first charge trap pattern disposed on the substrate to intersect the active region, a second charge...
US-9,318,568 Integration of a non-volatile memory (NVM) cell and a logic transistor and method therefor
A method of making a semiconductor device includes forming a memory gate structure in a nonvolatile memory region of the semiconductor device, wherein the...
US-9,318,567 Fabrication method for semiconductor devices
A method of fabricating a semiconductor device includes the following steps. First, a semiconductor substrate is provided, which includes at least a fin...
US-9,318,566 Method of fabricating semiconductor device having grooved source contact region
In a method of fabricating a semiconductor device, a channel layer is formed on a substrate, and trench patterns are formed in the channel layer. Impurity...
US-9,318,565 Power semiconductor device with dual field plate arrangement and method of making
A semiconductor device includes a semiconductor layer, gate electrodes, an insulating film, source electrodes, and drain electrodes which are provided on the...
US-9,318,564 High density static random access memory array having advanced metal patterning
Methods and apparatus directed toward a high density static random access memory (SRAM) array having advanced metal patterning are provided. In an example,...
US-9,318,563 Silicon carbide single-crystal substrate
A silicon carbide single-crystal substrate includes a first surface, a second surface opposite to the first surface, and a peripheral edge portion sandwiched...
US-9,318,562 Semiconductor apparatus with band energy alignments
A semiconductor apparatus includes: a semiconductor apparatus includes: a first semiconductor layer of a first conductivity type; a second semiconductor layer...
US-9,318,561 Device isolation for III-V substrates
Techniques for device isolation for III-V semiconductor substrates are provided. In one aspect, a method of fabricating a III-V semiconductor device is...
US-9,318,560 Group III-V device with strain-relieving layers
According to one exemplary embodiment, a group III-V semiconductor device includes at least one transition layer situated over a substrate. The group III-V...
US-9,318,559 Method for producing group III nitride semiconductor and template substrate
A semiconductor substrate includes a sapphire substrate including a c-plane main surface and a groove in a surface thereof, the groove including side surfaces...
US-9,318,558 MOS field effect transistor
The present invention is to cause high channel mobility and a high threshold voltage to coexist in a SiC-MOSFET power device which uses a SiC substrate. The SiC...
US-9,318,556 Graphene transistor having tunable barrier
Provided are graphene transistors having a tunable barrier. The graphene transistor includes a semiconductor substrate, an insulating thin film disposed on the...
US-9,318,555 Fabrication of graphene nanoelectronic devices on SOI structures
A semiconductor-on-insulator structure and a method of forming the silicon-on-insulator structure including an integrated graphene layer are disclosed. In an...
US-9,318,554 Gate pad and gate feed breakdown voltage enhancement
A semiconductor chip includes a semiconductor layer having first and second opposing main surfaces. A plurality of MOSFET cells are at least partially formed in...
US-9,318,553 Nanowire device with improved epitaxy
As disclosed herein, a method for fabricating a nanowire device with improved epitaxy, includes forming a nanowire stack on a substrate, the nanowire stack...
US-9,318,552 Methods of forming conductive contact structures for a semiconductor device with a larger metal silicide...
One illustrative method disclosed herein includes, among other things, forming a first epi semiconductor material in a source/drain region of a transistor...
US-9,318,551 Trench isolation structures and methods for bipolar junction transistors
Device structures, fabrication methods, and design structures for a bipolar junction transistor. A first isolation region is formed in a substrate to define a...
US-9,318,550 Semiconductor device with device separation structures
A semiconductor device includes a first gate electrode structure, a second gate electrode structure, a device separation structure, and cell separation...
US-9,318,549 Semiconductor device with a super junction structure having a vertical impurity distribution
A super junction semiconductor device includes a semiconductor portion with parallel first and second surfaces. An impurity layer of a first conductivity type...
US-9,318,548 Semiconductor device
A semiconductor device includes a semiconductor substrate, a semiconductor layer, a first electrode, and a first insulating film. The semiconductor layer is...
US-9,318,547 Wide bandgap insulated gate semiconductor device
A wide bandgap insulated gate semiconductor device includes a semiconductor substrate made of semiconductor having a bandgap wider than silicon; n.sup.- drift...
US-9,318,546 Doped electrode for DRAM capacitor stack
In some embodiments, a metal oxide second electrode material is formed as part of a MIM DRAM capacitor stack. The second electrode material is doped with one or...
US-9,318,545 Resistor structure and method for forming the same
A metal resistor structure and a method for forming the same are provided. The method includes: providing a substrate including a first and a second metallic...
US-9,318,544 Organic light emitting display apparatus, method of manufacturing the same, and mask used in the method
A method of manufacturing an organic light emitting display apparatus is provided. A plurality of first electrodes is formed on a substrate. An intermediate...
US-9,318,543 Organic light-emitting diode (OLED) display and method of manufacturing the same
An organic light-emitting diode (OLED) display and method of manufacturing the same are disclosed. In one aspect, the OLED display includes a substrate, a thin...
US-9,318,542 Method for fabricating organic light emitting diode display device with improved effective emitting pixels area
An organic light emitting diode display device includes a substrate including a display region, wherein a plurality of pixel regions are defined in the display...
US-9,318,541 Polymer film, flexible light emitting element display device, and rollable display device
The present invention relates to a polymer film containing a binder resin and polyrotaxane having a specific structure, and a flexible light emitting element...
US-9,318,540 Light emitting diode pixel unit circuit and display panel
A LED pixel unit circuit and a display panel. The circuit comprises a driving module (31) which is provided with a driving control unit (311). The driving...
US-9,318,539 Organic light emitting diode display device and manufacturing method thereof
An organic light emitting diode display and a manufacturing method thereof are disclosed. The organic light emitting diode display includes: a flexible upper...
US-9,318,538 Organic light emitting diode array
The disclosure relates to an organic light emitting diode array. The organic light emitting diode array includes a number of thin-film transistors arranged to...
US-9,318,537 Organic light emitting device, method of manufacturing the same, and shadow mask therefor
The present invention relates to an organic light emitting device, and the organic light emitting device according to an exemplary embodiment of the present...
US-9,318,536 Light emitters with series connection
An organic solid state lighting system comprising multiple OLED modules connected in series is provided.
US-9,318,535 Vapor deposition apparatus, deposition method, and method of manufacturing organic light-emitting display...
Provided is a vapor deposition apparatus including: a plasma generator configured to change at least a portion of a first raw material gas into a radical form;...
US-9,318,534 Solid-state image pickup device and manufacturing method thereof, and electronic apparatus
Provided is a solid-state image pickup device that makes it possible to enhance image quality, and a manufacturing method thereof, and an electronic apparatus....
US-9,318,533 Methods and systems to reduce location-based variations in switching characteristics of 3D ReRAM arrays
Methods for reducing location-based variations in the switching characteristics of memory cells within a memory array are described. In some cases, the...
US-9,318,532 Semiconductor memory device
A semiconductor memory device comprises: a memory cell array comprising first wiring lines, second wiring lines extending crossing the first wiring lines, and...
US-9,318,531 SiC--Si3N4 nanolaminates as a semiconductor for MSM snapback selector devices
Selector elements that can be suitable for nonvolatile memory device applications are disclosed. The selector element can have low leakage currents at low...
US-9,318,530 Wafer level light-emitting diode array and method for manufacturing same
Disclosed are a light emitting diode array on a wafer level and a method of forming the same. The light emitting diode array includes a growth substrate; a...
US-9,318,529 Wafer level light-emitting diode array
A light emitting diode array is provide to include: a substrate; light emitting diodes positioned over the substrate, each including a first semiconductor...
US-9,318,528 Image sensor device and method
A system and method for blocking heat from reaching an image sensor in a three dimensional stack with a semiconductor device. In an embodiment a heat sink is...
US-9,318,527 Method for producing photosensitive infrared detectors
A method for producing at least one photosensitive infrared detector by assembling a first electronic component including plural photodiodes sensitive to...
US-9,318,526 Mechanisms for forming image-sensor device with deep-trench isolation structure
A method for fabricating an image-sensor device is provided. The method includes forming a radiation-sensing region and a doped isolation region in a...
US-9,318,525 Method for manufacturing solid-state image sensor
A first pixel includes a first charge accumulation portion of a first conductivity type in a first region. A second pixel includes a second charge accumulation...
US-9,318,524 Imaging detector with per pixel analog channel well isolation with decoupling
An imaging apparatus (400) includes a detector array (412) with at least one detector tile (418). The detector tile includes a photosensor array (422) with a...
US-9,318,523 Solid-state imaging device
A solid-state imaging device that includes a pixel including a photoelectric conversion section, and a conversion section that converts an electric charge...
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