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Patent # Description
US-9,324,579 Metal structures and methods of using same for transporting or gettering materials disposed within...
Embodiments of the present invention provide metal structures for transporting or gettering materials disposed on or within a semiconductor substrate. A...
US-9,324,578 Hard mask reshaping
One or more systems and methods for reshaping a hard mask are provided. A semiconductor arrangement comprises one or more structures formed from a layer...
US-9,324,577 Modified self-aligned contact process and semiconductor device
Methods of modifying a self-aligned contact process in a semiconductor fabrication and a semiconductor device are provided. A method includes forming a...
US-9,324,576 Selective etch for silicon films
A method of etching patterned heterogeneous silicon-containing structures is described and includes a remote plasma etch with inverted selectivity compared to...
US-9,324,575 Plasma etching method and plasma etching apparatus
In a plasma etching method for forming a hole in an etching target film, a process of generating a plasma of a processing gas containing at least C.sub.xF.sub.y...
US-9,324,574 Methods of forming patterns in semiconductor devices
Methods of forming a pattern in a semiconductor device may be provided. The methods may include sequentially forming a first hard mask layer and a second hard...
US-9,324,573 Method for manufacturing semiconductor device
One method includes sequentially forming an insulating film and a first material film on a semiconductor substrate, forming on the first material film a mask...
US-9,324,572 Plasma etching method, method for producing semiconductor device, and plasma etching device
Provided is a plasma etching method increasing the selectivity of a silicon nitride film in relation to the silicon oxide film or silicon functioning as a base....
US-9,324,571 Post treatment for dielectric constant reduction with pore generation on low K dielectric films
A method and apparatus for depositing a low K dielectric film with one or more features is disclosed herein. A method of forming a dielectric layer can include...
US-9,324,570 Method of manufacturing semiconductor device
The present invention provides a method of manufacturing a semiconductor device including using a first photomask to form a sacrificial block on a hard mask...
US-9,324,569 Plasma etching method and plasma etching apparatus
A groove shape can be improved. A plasma etching method includes plasma-processing a photoresist film that is formed on a mask film and has a preset pattern;...
US-9,324,568 Method of forming a semiconductor device
A semiconductor device includes an active region, a gate conductor and a source electrode. The active region includes a drain region, a channel region stacked...
US-9,324,567 Gas cluster ion beam etching process for etching Si-containing, Ge-containing, and metal-containing materials
A method and system for performing gas cluster ion beam (GCIB) etch processing of various materials is described. In particular, the GCIB etch processing...
US-9,324,566 Controlled spalling using a reactive material stack
A reactive material stack is formed above a surface of a base substrate. The reactive material stack includes metals which when subjected to heat energy or...
US-9,324,565 Systems and methods for forming contact definitions
In one embodiment, a method for fabricating thin film tunnel devices includes forming multiple bottom electrodes on a substrate, depositing an insulating layer...
US-9,324,564 Spalling with laser-defined spall edge regions
Laser ablation can be used to form a trench within at least a blanket layer of a stressor layer that is atop a base substrate. A non-ablated portion of the...
US-9,324,563 Methods of forming patterns
Methods of forming patterns are provided. The methods may include sequentially forming an etch-target layer and a photoresist layer on a substrate, exposing two...
US-9,324,562 Metal halide solid-state surface treatment for nanocrystal materials
Methods of treating nanocrystal and/or quantum dot devices are described. The methods include contacting the nanocrystals and/or quantum dots with a solution...
US-9,324,561 Silicon carbide epitaxial wafer, and preparation method thereof
According to an embodiment, there is provided a method of fabricating an epitaxial wafer, which includes preparing a wafer in a susceptor; and growing an...
US-9,324,560 Patterned substrate design for layer growth
A patterned surface for improving the growth of semiconductor layers, such as group III nitride-based semiconductor layers, is provided. The patterned surface...
US-9,324,559 Thin film deposition apparatus with multi chamber design and film deposition methods
A multi chamber thin film deposition apparatus and a method for depositing films, is provided. Each chamber includes a three dimensional gas delivery system...
US-9,324,558 Machining process for semiconductor wafer
A surface of a semiconductor wafer is subjected to high flattening processing. A resin application and grinding step is repeatedly carried out, the step...
US-9,324,557 Method for fabricating equal height metal pillars of different diameters
A process to form metal pillars on a flip-chip device. The pillars, along with a layer of solder, will be used to bond die pads on the device to respective...
US-9,324,556 Field electron emission film, field electron emission device, light emission device, and method for producing them
A field electron emission film that is capable of being operated with low electric power and enhancing the uniformity in luminance within the light emission...
US-9,324,555 Amalgam spheres for energy-saving lamps and their production
Energy-saving lamps contain a gas filling of mercury vapor and argon in a gas discharge bulb. Amalgam spheres are used for filling the gas discharge bulb with...
US-9,324,554 Methods and systems for providing a substantially quadrupole field with significant hexapole and octapole...
A system and method involving processing ions in a linear ion trap are provided, involving a two-dimensional asymmetric substantially quadrupole field having a...
US-9,324,553 Multireflection time-of-flight mass spectrometer
A method of reflecting ions in a multireflection time of flight mass spectrometer is disclosed. The method includes guiding ions toward an ion mirror having...
US-9,324,552 Periodic field differential mobility analyzer
A periodic field differential mobility analyzer apparatus for separating and identifying ionic analytes employs a series of elongated parallel channels, a pump,...
US-9,324,551 Mass spectrometer and method of driving ion guide
A method of operating an electrode changeover switch which switches the connection state of electrodes, the electrode changeover switch is provided in the...
US-9,324,550 Self-shielding flex-circuit drift tube, drift tube assembly and method of making
The present disclosure is directed to an ion mobility drift tube fabricated using flex-circuit technology in which every other drift electrode is on a different...
US-9,324,549 MEMS 2D air amplifier ion focusing device and manufacturing method thereof
The present invention relates to the field of micro electro mechanical system (MEMS), and particularly relates to a MEMS device of a two-dimensional (2D) air...
US-9,324,548 Method and device to increase the internal energy of ions in mass spectrometers
A method and a device increases (e.g., uniformly) the internal energy of ions, in order to remove water shells or adducts, to decompose clusters or molecular...
US-9,324,547 Method and apparatus for mass analysis utilizing ion charge feedback
A method of mass analysis and a mass spectrometer are provided wherein a batch of ions is accumulated in a mass analyzer; the batch of ions accumulated in the...
US-9,324,546 Integrated capacitor transimpedance amplifier
Spectrometers including integrated capacitive detectors are described. An integrated capacitive detector integrates ion current from the collector (220) into a...
US-9,324,545 Calibrating dual ADC acquisition system
A method of calibrating a dual gain ADC detector system is disclosed comprising passing a test signal through a high gain signal path to produce a first signal...
US-9,324,544 Saturation correction for ion signals in time-of-flight mass spectrometers
The invention relates to time-of-flight mass spectrometers in which individual time-of-flight spectra are measured by detection systems with limited dynamic...
US-9,324,543 Dynamic resolution correction of quadrupole mass analyser
A method of mass spectrometry is disclosed comprising automatically correcting the mass or mass to charge ratio resolution of a quadrupole mass filter or mass...
US-9,324,542 Plasma processing method and plasma processing apparatus
In a plasma processing apparatus of an exemplary embodiment, energy of microwaves is introduced from an antenna into the processing container through a...
US-9,324,541 Certified wafer inspection
A method for certifying an inspection system using a calibrated surface, comprising: acquiring a calibrated list from said calibrated surface, with said...
US-9,324,540 Charged particle beam device
When a signal electron is detected by energy selection by combining and controlling retarding and boosting for observation of a deep hole, etc., the only way...
US-9,324,539 Electron microscope sample holder for forming a gas or liquid cell with two semiconductor devices
A novel sample holder for specimen support devices for insertion in electron microscopes. The novel sample holder of the invention allows for the introduction...
US-9,324,538 Coaxial drive apparatus for multidirectional control
A coaxial drive apparatus for multidirectional control, including: a housing; a stage pivotally installed in the housing, with the object laid on the stage; a...
US-9,324,537 Charged particle inspection method and charged particle system
The present invention relates to a charged particle system comprising: a charged particle source; a first multi aperture plate; a second multi aperture plate...
US-9,324,536 Dual-energy X-ray tubes
Dual-energy x-ray tubes. In one example embodiment, a dual-energy x-ray tube includes an evacuated enclosure, an anode positioned within the evacuated...
US-9,324,535 Self contained irradiation system using flat panel X-ray sources
The present disclosure describes a self-contained irradiator comprising at least one X-ray source inside a shielded enclosure, the one or more sources each...
US-9,324,534 Cold field electron emitters based on silicon carbide structures
A cold cathode field emission electron source capable of emission at levels comparable to thermal sources is described. Emission in excess of 6 A/cm.sup.2 at...
US-9,324,533 Medium voltage controllable fuse
An electric fuse, having a first fusible element and a disconnect section electrically connected in series to the first fusible element. The disconnect section...
US-9,324,532 Fuse failure display
Circuitry for fuse failure display for monitoring the trip status of a fuse is disclosed, wherein a light-emitting diode is provided in order to display the...
US-9,324,531 Fuse unit
A fuse unit is provided having a fuse element (2) in which a first terminal connecting part (4) and second terminal connecting parts (5) are formed and an...
US-9,324,530 Circuit for protecting against reverse polarity
A circuit for protecting an electric load against reverse polarity is provided by using a MOSFET (metal oxide semiconductor field-effect transistor), wherein:...
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