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Patent # Description
US-9,331,173 Semiconductor device having a carbon containing insulation layer formed under the source/drain
A semiconductor arrangement and method of formation are provided herein. A semiconductor arrangement includes a metal connect in contact with a first active...
US-9,331,172 Method for making HKMG dummy gate structure with amorphous/ONO masking structure and procedure
A method for manufacturing a dummy gate structure. The method may include: forming a dummy gate oxide layer and a dummy gate material layer on a semiconductor...
US-9,331,171 Manufacturing method for forming semiconductor structure
The present invention provides a manufacturing method of a semiconductor structure, comprising the following steps. First, a substrate is provided, a first...
US-9,331,169 Nitride semiconductor Schottky diode and method for manufacturing same
According to an embodiment, a nitride semiconductor Schottky diode includes a first layer including a first nitride semiconductor and a second layer provided on...
US-9,331,168 Semiconductor structure and manufacuturing method of the same
Some embodiments of the present disclosure provide a semiconductor structure. The semiconductor structure includes a substrate, a high k dielectric layer...
US-9,331,167 Nonvolatile semiconductor storage device and method for manufacturing the same
According to an aspect of the present invention, there is provided a nonvolatile semiconductor storage device including: a semiconductor substrate; a source...
US-9,331,166 Selective dielectric spacer deposition for exposing sidewalls of a finFET
Angled directional ion beams are directed to sidewalls of a gate structure that straddles at least one semiconductor fin. The directions of the angled...
US-9,331,165 Thin-film transistor (TFT), manufacturing method thereof, array substrate, display device and barrier layer
The present invention discloses a thin-film transistor (TFT), a manufacturing method thereof, an array substrate and a display device. The present invention is...
US-9,331,164 Silicon carbide semiconductor device
A silicon carbide semiconductor device includes: a silicon carbide semiconductor layer; and an electrode layer in contact with the silicon carbide semiconductor...
US-9,331,163 Transistor with diamond gate
A field effect transistor having a diamond gate electrode and a process for forming the same. In some embodiments, the device is an AlGaN/GaN ...
US-9,331,162 Array substrate, liquid crystal display device having the same and method for manufacturing the same thereof
An array substrate, comprising a substrate, a multi-layer electrode and a switch element, is provided. The multi-layer electrode is disposed on the substrate...
US-9,331,161 Metal gate structure and method of forming the same
The present invention provides a metal gate structure which is formed in a trench of a dielectric layer. The metal gate structure includes a work function metal...
US-9,331,160 Split-gate non-volatile memory cells having gap protection zones
Split-gate non-volatile memory (NVM) cells having gap protection zones are disclosed along with related manufacturing methods. After formation of a gate for a...
US-9,331,159 Fabricating transistor(s) with raised active regions having angled upper surfaces
Methods of fabricating transistors having raised active region(s) with at least partially angled upper surfaces are provided. The method includes, for instance:...
US-9,331,158 Transistor devices and methods
The present disclosure includes transistor devices and methods. In one embodiment, a transistor includes a gate, a source, and a drain. According to one aspect...
US-9,331,157 Semiconductor device
A semiconductor device includes: a p-type semiconductor layer; an n-type semiconductor layer connected with the p-type semiconductor layer; a first electrode...
US-9,331,156 Semiconductor device and method for manufacturing the same
To manufacture a highly reliable semiconductor device by giving stable electric characteristics to a transistor. An oxide semiconductor film is deposited by a...
US-9,331,155 Semiconductor device and manufacturing method
Disclosed is a semiconductor device comprising at least one active layer (14, 16) on a substrate (10) and a first contact (24, 26, 28) to the at least one...
US-9,331,154 High electron mobility transistor
A high electron mobility transistor comprises a substrate, an epitaxial stack arranged above the substrate and having a first region and a second region...
US-9,331,153 Methods and structures for forming microstrip transmission lines on thin silicon on insulator (SOI) wafers
A structure is provided having: (A) a first silicon layer and a first silicon dioxide layer over the first silicon layer; and (B) a second silicon layer and a...
US-9,331,152 Semiconductor device and method of manufacturing the same
A semiconductor device includes: a gate oxide film formed on a surface of a semiconductor substrate; a gate electrode formed on the gate oxide film; and a high...
US-9,331,151 Method for coupling a graphene layer and a substrate and device comprising the graphene/substrate structure...
The present disclosure regards a method for coupling a graphene layer to a substrate having at least one hydrophilic surface, the method comprising the steps of...
US-9,331,150 Semiconductor device and method of manufacturing the same
A semiconductor device of an embodiment includes a p-type first diamond semiconductor layer, a p-type second diamond semiconductor layer disposed on the first...
US-9,331,149 Method for low temperature bonding and bonded structure
A method for bonding at low or room temperature includes steps of surface cleaning and activation by cleaning or etching. The method may also include removing...
US-9,331,148 FinFET device with channel strain
A method for fabricating a semiconductor device, the method comprises forming a fin on a substrate, forming a dummy gate stack on the fin and the substrate,...
US-9,331,147 Methods and systems for using conformal filling layers to improve device surface uniformity
The invention discloses a treatment process for a semiconductor, comprising providing a substrate; defining a trench opening region of the substrate; performing...
US-9,331,146 Silicon nanowire formation in replacement metal gate process
Techniques for a semiconductor device are provided. Techniques are directed to forming a semiconductor device by: forming a fin structure in a substrate,...
US-9,331,145 Lateral double diffused MOS transistors and methods of fabricating the same
A lateral double diffused MOS transistor including substrate of a first conductivity type, drift region of a second conductivity type and body region of the...
US-9,331,144 Semiconductor device and method for producing the same
A semiconductor device includes, on one semiconductor substrate: a first element isolation region having a first width, wherein a liner oxide film, a liner...
US-9,331,143 Semiconductor structure having field plates over resurf regions in semiconductor substrate
A semiconductor structure is provided. The semiconductor structure comprises: a substrate; a first doping region, a first well and a second doping region formed...
US-9,331,142 Zener diode having a polysilicon layer for improved reverse surge capability and decreased leakage current
A semiconductor device such as a Zener diode includes a first semiconductor material of a first conductivity type and a second semiconductor material of a...
US-9,331,141 CMOS structure on replacement substrate
CMOS structures with a replacement substrate and methods of manufacture are disclosed herein. The method includes forming a device on a temporary substrate. The...
US-9,331,140 Semiconductor devices having hybrid capacitors and methods for fabricating the same
A semiconductor device includes a plurality of capacitors disposed on a substrate and a support pattern supporting upper portions and lower portions of the...
US-9,331,139 Ruthenium film formation method and storage medium
A ruthenium film formation method including: forming a ruthenium oxide film on a substrate; and reducing the ruthenium oxide film into a ruthenium film, wherein...
US-9,331,138 Semiconductor device having storage electrode and manufacturing method thereof
A semiconductor device includes a first storage electrode, a second storage electrode that is arranged above the first storage electrode, a first landing pad...
US-9,331,137 Metal-insulator-metal capacitors between metal interconnect layers
An integrated circuit may include interconnects formed from alternating metal interconnect layers and inter-metal dielectric layers. A metal-insulator-metal...
US-9,331,136 Integrated circuit and method of fabricating the same
An integrated circuit and a method of fabricating the integrated circuit are provided. In various embodiments, the integrated circuit includes a substrate and a...
US-9,331,135 Organic light emitting display
The present disclosure provides an organic light emitting display including: a first substrate including a display area where an organic light emitting device...
US-9,331,134 Organic electroluminescence display device
An organic EL display device has a pixel electrode and a common electrode, a first insulating layer that covers a thin-film transistor, a first wire provided on...
US-9,331,133 Light emitting device and electronic apparatus
On a semiconductor substrate, a plurality of transistors that includes a drive transistor which controls a drive current according to a potential of a gate, a...
US-9,331,132 Multiple conductive layer TFT
A multiple layer pixel architecture for an active matrix display is provided in which a common bus line is formed on a metal level which is separate from that...
US-9,331,131 Organic light emitting diode display and manufacturing method thereof
An organic light emitting diode display includes a substrate including a thin film transistor, a plurality of pixels on a pixel area of the substrate, a...
US-9,331,130 Light-emitting device
There is provided an EL light-emitting device with less uneven brightness. When a drain current of a plurality of current controlling TFTs is Id, a mobility is...
US-9,331,128 Display device and manufacturing method thereof
A display device, includes: a first substrate; an organic planarizing film that is made of an organic insulating material, and arranged on the first substrate;...
US-9,331,127 Organic light-emitting display apparatus and method of manufacturing the same
A organic light-emitting display apparatus includes a substrate, a thin film transistor disposed on the substrate and including an active layer, a gate...
US-9,331,126 Method for fabricating flexible display using a shape memory alloy film
Provided is a method for fabricating a flexible display device. The method includes attaching a shape memory alloy film memorizing a shape thereof as a curved...
US-9,331,125 Solid-state imaging device using plasmon resonator filter
According to one embodiment, a solid-state imaging device includes: a first inorganic photoelectric converter; a semiconductor substrate that includes a...
US-9,331,124 Variable resistance memory device and method of manufacturing the same
A variable resistance memory device includes a semiconductor substrate having a vertical transistor with a shunt gate that increases an area of a gate of the...
US-9,331,123 Logic unit including magnetic tunnel junction elements having two different anti-ferromagnetic layers
A logic unit for security engines or content addressable memory including Magnetic Tunnel Junction (MTJ) elements connected in series to form a NAND-type...
US-9,331,122 Solid-state imaging device with varied impurity concentration, method for manufacturing a solid-state imaging...
According to one embodiment of the present invention, a solid-state imaging device is provided. The solid-state imaging device includes a ...
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