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A photovoltaic device may be provided having a semiconductor substrate, an i-type amorphous layer or an i-type amorphous layer formed over a front surface or a...
Cam turntable, sun-tracking device equipped with same and control method
for the device
Provided are a cam turntable (2), a sun-tracking device equipped with the cam turntable (2) and a control method for the device. The sun-tracking device...
Apparatus and method for the automatic assembly of photovoltaic panels
Apparatus and method for the automatic assembly of photovoltaic panels with back-contact architecture, the apparatus comprising a series of six stations that...
Solar cells with tunnel dielectrics
A solar cell can have a first dielectric formed over a first doped region of a silicon substrate. The solar cell can have a second dielectric formed over a...
Ceramic composition having dispersion of nano-particles therein and
methods of fabricating same
Ceramic compositions having a dispersion of nano-particles therein and methods of fabricating ceramic compositions having a dispersion of nano-particles therein...
Multiple-junction photoelectric device and its production process
A multiple-junction photoelectric device includes sequentially, a substrate, a first conducting layer, at least two elementary photoelectric devices, at least...
Textured optoelectronic devices and associated methods of manufacture
Textured optoelectronic devices and associated methods of manufacture are disclosed herein. In several embodiments, a method of manufacturing a solid state...
Transversely-illuminated high current photoconductive switches with
geometry-constrained conductivity path
A photoconductive switch having a wide bandgap semiconductor material substrate between opposing electrodes, with one of the electrodes having an aperture or...
Solid-state imaging element and electronic apparatus
A solid-state imaging element includes a light receiving unit formed on a semiconductor base, and an anti-reflection film formed on the light receiving unit....
Low resistance, low reflection, and low cost contact grids for
The instant disclosure relates to contact grids for use in photovoltaic cells, wherein a cross-section of the contact grid fingers is shaped as a trapezoid, as...
Conductive composition and conductive feature formed at low temperatures
A method for forming a conductive feature. The method includes providing a substrate and providing a conductive composition. The conductive composition includes...
Photoelectric conversion device and manufacturing method thereof
In a method for manufacturing a photoelectric conversion device, a method for forming an embedded electrode is provided, which is suitable for a groove with a...
Non-alloyed contacts for III-V based solar cells
A multi junction solar cell is provided with a non-alloyed ohmic contact metallization stack by inversion of the top semiconductor layer from n-type to p-type...
Solar cell and method for manufacturing the same
A method for manufacturing a solar cell may include forming an emitter region that forms a p-n junction with a semiconductor substrate of a first conductive...
Photovoltaic cell with benzodithiophene-containing polymer
Benzodithiophene-containing polymers, as well as related photovoltaic cells, articles, systems, and methods, are disclosed.
Bifacial solar cell module
A bifacial solar cell module includes a solar cell panel including a plurality of strings arranged in a row direction. Each of the plurality of strings is...
Devices and methods related to electrostatic discharge protection benign
to radio-frequency operation
Disclosed are systems, devices and methods for providing electrostatic discharge (ESD) protection for integrated circuits. In some implementations, first and...
Voltage nonlinear resistor and multilayer varistor using same
A voltage nonlinear resistor includes a plurality of N-type ZnO crystal grains, a grain boundary layer, and an oxide grain as a P-type semiconductor. The grain...
Top port MEMS cavity package and method of manufacture thereof
A method for the manufacture of a package encasing a Micro-Electro-Mechanical Systems (MEMS) device provides a cover having a lid and sidewalls with a port...
Semiconductor device and method for fabricating the same
A semiconductor device and a method of manufacturing the same. The semiconductor device includes a channel, a gate, and a memory layer is interposed between the...
Floating gate flash memory device and compilation method thereof
The present invention discloses a floating gate flash memory device, comprising: a P-type substrate which has a source and a drain, and a first polysilicon...
Three-dimensional nonvolatile memory devices including interposed floating
Provided are three-dimensional nonvolatile memory devices and methods of fabricating the same. The memory devices include semiconductor pillars penetrating...
Transistor with reduced parasitic capacitance and access resistance of the
source and drain, and method of...
A transistor includes an active layer forming a channel for the transistor, an insulating layer disposed facing a lower face of the active layer, a gate turned...
Thin film transistor with a ring-shaped hole of a stopper layer and pixel
structure having the thin film transistor
A thin film transistor including a gate, a channel, a stopper layer, a source and a drain is provided. The channel and the gate are overlapped. The stopper...
Oxide semiconductor element and semiconductor device
A semiconductor element having high mobility, which includes an oxide semiconductor layer having crystallinity, is provided. The oxide semiconductor layer...
Array substrate and method of fabricating the same
An array substrate for an electronic display includes a substrate; a gate electrode on the substrate; a gate insulating layer on the gate electrode; an oxide...
Semiconductor device including multilayer wiring layer
The memory capacity of a DRAM is enhanced. A semiconductor memory device includes a driver circuit including part of a single crystal semiconductor substrate, a...
Semiconductor device and manufacturing method thereof
To provide a semiconductor device having a structure with which the device can be easily manufactured even if the size is decreased and which can suppress a...
Semiconductor device, driver circuit, and display device
To provide a semiconductor device having a high aperture ratio and including a capacitor with a high charge capacitance. To provide a semiconductor device with...
Semiconductor device and method for manufacturing semiconductor device
In a semiconductor device including an oxide semiconductor, the amount of oxygen vacancies is reduced. Moreover, electrical characteristics of a semiconductor...
Semiconductor device having aluminum-containing layer between two curved
The object of the invention is to provide a method for fabricating a semiconductor device having a peeled layer bonded to a base material with curvature....
FinFET with active region shaped structures and channel separation
A semiconductor structure in fabrication includes a n-FinFET and p-FinFET. Stress inducing materials such as silicon and silicon germanium are epitaxially grown...
Metal oxide semiconductor device and method for forming the same
The present invention provides a metal oxide semiconductor (MOS) device, comprising a gate structure and an epitaxial structure. The gate structure is disposed...
Tucked active region without dummy poly for performance boost and
In one embodiment, a semiconductor device is provided that includes a semiconductor substrate including an active region and at least one trench isolation...
MOS device having source and drain regions with embedded
germanium-containing diffusion barrier
An integrated circuit structure includes a gate stack over a semiconductor substrate, and an opening extending into the semiconductor substrate, wherein the...
Replacement metal gates to enhance tranistor strain
Some embodiments of the present invention include apparatuses and methods relating to NMOS and PMOS transistor strain.
Structure and method to form localized strain relaxed SiGe buffer layer
A method includes forming a multilayered structure by providing a substrate having a semiconductor layer disposed on a top surface thereof, the semiconductor...
Semiconductor memory device employing a ferromagnetic gate
A semiconductor memory device including a channel region and a ferromagnetic gate is provided. The channel region can be formed within a semiconductor nanowire....
Transistors with an extension region having strips of differing
A transistor includes a gate dielectric over a semiconductor having a first conductivity type, a control gate over the gate dielectric, source and drain regions...
III-Nitride insulating-gate transistors with passivation
A field-effect transistor (FET) includes a plurality of semiconductor layers, a source electrode and a drain electrode contacting one of the semiconductor...
A semiconductor device includes a first semiconductor layer of a first conductivity type, and a second semiconductor layer of a second conductivity type...
Scheme to align LDMOS drain extension to moat
An integrated circuit and method having an extended drain MOS transistor, wherein a diffused drain is deeper under a field oxide element in the drain than in a...
Method of fabrication and device configuration of asymmetrical DMOSFET
with schottky barrier source
A trenched semiconductor power device includes a trenched gate insulated by a gate insulation layer and surrounded by a source region encompassed in a body...
Super-junction trench MOSFETs with closed cell layout
A super-junction trench MOSFET with closed cell layout is disclosed, wherein closed gate trenches surrounding a deep trench in each unit cell. Trenched...
Manufacturing method of semiconductor device and semiconductor device
The present invention makes it possible to improve the accuracy of wet etching and miniaturize a semiconductor device in the case of specifying an active region...
Compound semiconductor device and method for fabricating the same
A first GaN layer (2), a first AlGaN layer (3), a second GaN layer (4) and a third GaN layer (5) are formed in layers on a substrate (1). A second AlGaN layer...
Semiconductor device and method for manufacturing the same
A method for manufacturing a semiconductor device includes forming a buffer layer made of a nitride semiconductor, forming a channel layer made of a nitride...
Bipolar transistor, band-gap reference circuit and virtual ground
The present invention provides a bipolar transistor, a method for forming the bipolar transistor, a method for turning on the bipolar transistor, and a band-gap...
Trench isolation for bipolar junction transistors in BiCMOS technology
Device structures and design structures for a bipolar junction transistor. A first isolation structure is formed in a substrate to define a boundary for a...
Thin-film transistor and method for manufacturing the same
According to one embodiment, a thin-film transistor comprises an oxide semiconductor layer formed on a part of a substrate, a first gate insulator film of a...