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Semiconductor device and method for manufacturing the same
A semiconductor device in which fluctuation in electric characteristics due to miniaturization is less likely to be caused is provided. The semiconductor device...
Method of manufacturing zinc oxide thin film, method of manufacturing thin
film transistor, zinc oxide thin...
A method of manufacturing a zinc oxide thin film includes: immersing a base having a conductive portion in at least part of the base, in a solution containing...
Semiconductor device and method for manufacturing semiconductor device
A semiconductor device includes a fin-shaped semiconductor layer disposed on a semiconductor substrate, a first insulating film disposed around the fin-shaped...
FinFET with dummy gate on non-recessed shallow trench isolation (STI)
An embodiment fin field effect transistor (FinFET) device includes fins formed from a semiconductor substrate, a non-recessed shallow trench isolation (STI)...
Semiconductor device including finFET and diode having reduced defects in
A semiconductor device comprises a first substrate portion and a second substrate portion disposed a distance away from the first substrate portion. The first...
Method for FinFET device
Provided is a method of forming a fin field effect transistor (FinFET). The method includes forming a fin on a substrate, the fin having a channel region...
FinFET spacer formation by oriented implantation
A FinFET having spacers with a substantially uniform profile along the length of a gate stack which covers a portion of a fin of semiconductor material formed...
Technique for selectively processing three dimensional device
A method to selectively process a three dimensional device, comprising providing a substrate having a first surface that extends horizontally, the substrate...
Spacerless fin device with reduced parasitic resistance and capacitance
and method to fabricate same
A structure includes a substrate having an insulator layer and a plurality of elongated semiconductor fin structures disposed on a surface of the insulator...
Method for system for manufacturing TFT, TFT, and array substrate
The method for manufacturing the TFT includes: forming a semiconductor film, a doped semiconductor film, a source/drain electrode film, and a first patterned...
Electronic component, a semiconductor wafer and a method for producing an
An electronic component includes a semiconductor substrate defined by a generally planar first face, a generally planar second face and side faces extending...
Low leakage, high frequency devices
Low leakage, high frequency devices and methods of manufacture are disclosed. The method of forming a device includes implanting a lateral diffusion drain...
Reducing direct source-to-drain tunneling in field effect transistors with
low effective mass channels
An approach to providing a barrier in a vertical field effect transistor with low effective mass channel materials wherein the forming of the barrier includes...
Semiconductor device and method for forming the same
A semiconductor device and a method for forming the same are disclosed. The semiconductor device includes a first junction region formed at the bottom of a...
Method for fabricating transistor with thinned channel
A method of fabricating a MOS transistor having a thinned channel region is described. The channel region is etched following removal of a dummy gate. The...
Multi-phase source/drain/gate spacer-epi formation
Approaches for forming an epitaxial (epi) source/drain (S/D) and/or a semiconductor device having an epi S/D are provided. In embodiments of the invention, a...
Semiconductor device having curved gate electrode aligned with curved
side-wall insulating film and...
A semiconductor device including a channel region formed in a semiconductor substrate; a source region formed on one side of the channel region; a drain region...
Method of making semiconductor device
A method of fabricating a semiconductor device includes epitaxially-growing a strained material in a cavity of a substrate comprising a major surface and the...
Metal gate stack having TiAICN as work function layer and/or
A metal gate stack having a titanium aluminum carbon nitride (TiAlCN) as a work function layer and/or a multi-function blocking/wetting layer, and methods of...
On-SOI integrated circuit comprising a subjacent protection transistor
An integrated circuit features a FET, an UTBOX layer plumb with the FET, an underlayer ground plane with first doping plumb with the FET's gate and channel,...
Aluminum nitride based semiconductor devices
Semiconductor structures and techniques are described which enable forming aluminum nitride (AIN) based devices by confining carriers in a region of AIN by...
Nitride-based semiconductor device
A semiconductor device according to an embodiment includes a nitride semiconductor layer, a gate electrode provided above the nitride semiconductor layer, a...
Bi-directional ESD diode structure with ultra-low capacitance that
consumes a small amount of silicon real estate
A bi-directional electrostatic discharge diode structure consumes substantially less silicon real estate and provides ultra-low capacitance by utilizing a p-...
Silicon carbide semiconductor device and method for producing the same
In a method for producing an SiC semiconductor device, a p type layer is formed in a trench by epitaxially growing, and is then left only on a bottom portion...
Fringe capacitance reduction for replacement gate CMOS
A replacement metal gate transistor structure and method with thin silicon nitride sidewalls and with little or no high-k dielectric on the vertical sidewalls...
Integrated circuits having a metal gate structure and methods for
fabricating the same
Integrated circuits and methods for fabricating integrated circuits are provided. In an exemplary embodiment, a method for fabricating an integrated circuit...
Semiconductor devices and methods of manufacturing the same
Semiconductor devices and methods of manufacturing the same are disclosed. The semiconductor device a gate dielectric pattern on a substrate and a gate...
Semiconductor device fabrication method and semiconductor device
There is provided a method of fabricating a semiconductor device, the method including: forming a first semiconductor region at a front surface of a substrate,...
Semiconductor device having electrode and manufacturing method thereof
The invention relates to integrated circuit fabrication, and more particularly to a semiconductor device with an electrode. An exemplary structure for a...
Very high aspect ratio contact
A semiconductor device with a very high aspect ratio contact has a deep trench in the substrate. A dielectric liner is formed on sidewalls and a bottom of the...
Deep gate-all-around semiconductor device having germanium or group III-V
Deep gate-all-around semiconductor devices having germanium or group III-V active layers are described. For example, a non-planar semiconductor device includes...
Layout architecture for performance improvement
An integrated circuit is provided. The integrated circuit includes a first contact disposed over a first source/drain region, a second contact disposed over a...
Replacement gate MOSFET with a high performance gate electrode
In a replacement gate scheme, a continuous material layer is deposited on a bottom surface and a sidewall surface in a gate cavity. A vertical portion of the...
Method of manufacturing MOS-type semiconductor device
A method of manufacturing a MOS-type semiconductor device capable of increasing the thickness of a gate oxide film and obtaining high gate withstanding power...
Non-volatile memory device
A non-volatile memory device includes an isolation layer formed over a substrate to define an active region, a floating gate formed over the substrate, a...
Contact structure of semiconductor device
The disclosure relates to a semiconductor device. An exemplary structure for a contact structure for a semiconductor device comprises a substrate comprising a...
Closed cell lateral MOSFET using silicide source and body regions
A closed cell lateral MOSFET device includes minimally sized source/body contacts formed in one or more source cells with silicided source and body diffusion...
Semiconductor device with field plate
A semiconductor device includes a first semiconductor layer, a second semiconductor layer of a second conductivity type formed on the first semiconductor layer,...
Semiconductor device with point defect region doped with transition metal
A simplified manufacturing process stably produces a semiconductor device with high electrical characteristics, wherein platinum acts as an acceptor. Plasma...
Planar semiconductor growth on III-V material
A semiconductor structure includes a III-V monocrystalline layer and a germanium surface layer. An interlayer is formed directly between the III-V...
Transistors, methods of forming transistors and display devices having
A transistor, a display device, and associated methods, the transistor including a substrate; an active layer pattern disposed on the substrate, the active...
Group III-nitride-based enhancement mode transistor
A Group III-nitride-based enhancement mode transistor includes a multi-heterojunction fin structure. A first side face of the multi-heterojunction fin structure...
Gallium nitride on high thermal conductivity material device and method
Embodiments include but are not limited to semiconductor devices including a barrier layer, a gallium nitride channel layer having a Ga-face coupled with the...
High voltage power semiconductor device on SiC
4H SIC epiwafers with thickness of 50-100 .mu.m are grown on 4.degree. off-axis substrates. Surface morphological defect density in the range of 2-6 cm.sup.-2...
Silicon carbide semiconductor device having junction barrier Schottky
A silicon carbide semiconductor device includes a junction barrier Schottky diode including a substrate, a drift layer, an insulating film, a Schottky barrier...
Electrical contact for graphene part
An electrical or electronic device is disclosed. In some embodiments, an electrical device includes a single-layer graphene part extending in a lateral...
Formation of large scale single crystalline graphene
A method for transfer of a two-dimensional material includes forming a spreading layer of a two-dimensional material on a first substrate. The spreading layer...
Graphene-based semiconductor device
A semiconductor device is provided comprising a bilayer graphene comprising a first and a second adjacent graphene layer, and a first electrically insulating...
Ferromagnet-free spin transistor and method for operating the same
A spin transistor includes: an input part that is made of a material exhibiting a spin Hall effect and configured to transfer electrons with a predetermined...
Silicon-carbide semiconductor device and manufacturing method therefor
It is an object of the present invention to provide a silicon carbide semiconductor device that reduces an influence of an off-angle of a silicon carbide...