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Patent # Description
US-9,337,270 Semiconductor device
A semiconductor device includes at least one field effect transistor structure, which is formed on a semiconductor substrate. The field effect transistor...
US-9,337,269 Buried-channel FinFET device and method
A fin field effect transistor (FinFET), and a method of fabrication, is introduced. In an embodiment, trenches are formed in a substrate, wherein a region...
US-9,337,268 SiC devices with high blocking voltage terminated by a negative bevel
A negative bevel edge termination for a Silicon Carbide (SiC) semiconductor device is disclosed. In one embodiment, the negative bevel edge termination includes...
US-9,337,267 Semiconductor device
A semiconductor device is provided with an electronic transit layer, an electron supply layer, a source region, a drain electrode, a source electrode and an...
US-9,337,266 Methods and apparatuses including an active area of a tap intersected by a boundary of a well
Apparatuses and methods are disclosed. One such apparatus includes a well having a first type of conductivity formed within a semiconductor structure having a...
US-9,337,265 Compound semiconductor structure
A semiconductor structure comprises a substrate comprising a first crystalline semiconductor material, a dielectric layer, above the substrate, defining an...
US-9,337,264 Process for forming a surrounding gate for a nanowire using a sacrificial patternable dielectric
Techniques for defining a damascene gate in nanowire FET devices are provided. In one aspect, a method of fabricating a FET device is provided including the...
US-9,337,263 Semiconductor device including a semiconductor sheet unit interconnecting a source and a drain
A semiconductor device includes a substrate, a first source/drain (S/D), a second S/D, and a semiconductor sheet unit. The substrate extends in a substantially...
US-9,337,262 Structures and methods with reduced sensitivity to surface charge
The present application provides (in addition to more broadly applicable inventions) improvements which are particularly applicable to two-sided power...
US-9,337,261 Method of forming microelectronic or micromechanical structures
The invention relates to transferring, in one exposure, a single-mask feature to form two features on an underlying material. Specifically, a doubled walled...
US-9,337,260 Shallow trench isolation in bulk substrate
The semiconductor structure includes a plurality of first insulators in a substrate, a common insulating layer surrounding the sidewall and the bottom of said...
US-9,337,259 Structure and method to improve ETSOI MOSFETS with back gate
A structure to improve ETSOI MOSFET devices includes a wafer having regions with at least a first semiconductor layer overlying an oxide layer overlying a...
US-9,337,258 Method of making a FinFET device
A method for fabricating a fin field-effect transistor (FinFET) device includes forming a first dielectric layer over a substrate and then etching the first...
US-9,337,257 Semiconductor device
[Problem] To provide a semiconductor device in which it is possible to lessen the local concentration of an electric field on a termination structure....
US-9,337,256 Semiconductor device and method of manufacturing semiconductor device
A method of manufacturing a semiconductor device having a VDMOSFET (Vertical Double-diffused Metal Oxide Semiconductor Field-Effect Transistor) and a planar...
US-9,337,255 Reducing direct source-to-drain tunneling in field effect transistors with low effective mass channels
An approach to providing a barrier in a vertical field effect transistor with low effective mass channel materials wherein the forming of the barrier includes...
US-9,337,254 Integrated FinFET capacitor
A technique relates to forming a semiconductor device. A field-effect transistor structure having a substrate, a fin structure patterned in the substrate, a...
US-9,337,253 Method and apparatus for constructing an isolation capacitor in an integrated circuit
At least one high voltage rated isolation capacitor is formed on a face of a primary integrated circuit die. The isolation capacitor AC couples the primary...
US-9,337,252 Method for making semiconductor device with stacked analog components in back end of line (BEOL) regions
A method for making a semiconductor device may include forming a first dielectric layer above a semiconductor substrate, forming a first trench in the first...
US-9,337,251 Integrated magnetic core inductors with interleaved windings
A coupled inductor topology for a thin-film magnetic core power inductor that enables efficient integrated power conversion. Coupled magnetic core inductors...
US-9,337,250 Semiconductor package and method of manufacturing the same
A semiconductor package and a method of manufacturing the same are provided. The semiconductor package includes: a substrate having a plurality of conductive...
US-9,337,249 OLED display panel and method of manufacturing the same and display apparatus
An Organic Light Emitting Diode (OLED) display panel is disclosed. The display panel includes a substrate, a plurality of power lines disposed on the substrate,...
US-9,337,248 Display device including alignment mark and light shielding pattern
Disclosed is a display device that includes a substrate having an active area and a dead area around the active area; an alignment mark on the inside surface of...
US-9,337,247 Organic light-emitting diode display with bottom shields
A display may have an array of organic light-emitting diode display pixels. Each display pixel may have a light-emitting diode that emits light under control of...
US-9,337,246 Organic light emitting display device and method of manufacturing the same using a solution process
An organic light emitting display device includes a substrate in which a first pixel area and a second pixel area different from each other are defined, a first...
US-9,337,245 Method of manufacturing organic electroluminescence device
A method of manufacturing an organic electroluminescence device is disclosed. In one aspect, the method includes forming color patterns on a substrate, and...
US-9,337,244 Light-emitting device and electronic device using light-emitting device
Provided is a highly reliable light-emitting device in which a light-emitting element is prevented from being damaged when external physical force is applied....
US-9,337,243 Area sensor and display apparatus provided with an area sensor
An area sensor of the present invention has a function of displaying an image in a sensor portion by using light-emitting elements and a reading function using...
US-9,337,242 Display device
A display device is provided including a display region arranged with a plurality of main pixels formed from a group including a red pixel, green pixel, blue...
US-9,337,241 Pixel patterns for organic light-emitting diode display
An electronic device may include a display having an array of organic light-emitting diode display pixels. The display pixels may have subpixels of different...
US-9,337,240 Integrated circuit package with a universal lead frame
A lead frame for an integrated circuit (IC) package is disclosed. The lead frame includes a center region and a plurality of lead fingers surrounding the center...
US-9,337,239 Electronic device having flash memory array formed in at different level than variable resistance memory cells
An electronic device includes a memory. The memory includes a first cell array including a plurality of flash memory cells, a first peripheral circuit suitable...
US-9,337,238 Photo-induced MSM stack
Selector elements that can be suitable for nonvolatile memory device applications are disclosed. The selector element can have low leakage currents at low...
US-9,337,237 Methods, structures and devices for increasing memory density
Non-volatile memory devices comprising a memory string including a plurality of vertically superimposed diodes. Each of the diodes may be arranged at different...
US-9,337,236 Light emitting device having current blocking layer
A light emitting device includes a substrate, light emitting cells, each of the light emitting cells including a light emitting structure including lower and...
US-9,337,235 Method and apparatus for image sensor packaging
A backside illuminated image sensor having a photodiode and a first transistor in a sensor region and located in a first substrate, with the first transistor...
US-9,337,234 Photoelectric converter, photoelectric converter array and imaging device
A photoelectric converter includes a first pn junction comprised of at least two semiconductor regions of different conductivity types, and a first field-effect...
US-9,337,233 Photodiode array for imaging applications
Embodiments of a photodiode array are provided herein. In some embodiments, a photodiode array may include a semiconductor layer configured to convert photons...
US-9,337,232 Substrate stacked image sensor having a dual detection function
The present invention relates to a substrate stacked image sensor having a dual detection function, in which when first to fourth photodiodes are formed in a...
US-9,337,231 Solid state image sensor with plural overlapping photoelectric conversion units
A solid-state image sensor includes: four or more photoelectric conversion units having spectral sensitivity characteristics different from one another; an...
US-9,337,230 Solid-state imaging device with suppression of color mixture, manufacturing method thereof, and electronic...
A solid-state imaging device having a backside illuminated structure, includes: a pixel region in which pixels each having a photoelectric conversion portion...
US-9,337,229 Semiconductor device and manufacturing method thereof
A semiconductor device includes an epitaxial layer including a first surface and a silicon layer disposed on the first surface and including a second surface...
US-9,337,228 Stack chip package image sensor
An image sensor cell is divided into two chips, and a capacitor for noise reduction is formed in a bottom wafer in correspondence with a unit pixel of a top...
US-9,337,227 Multi-substrate image sensor having a dual detection function
The present invention relates to an image sensor in which substrates are stacked, wherein a substrate-stacked image sensor according to the present invention is...
US-9,337,226 Image pickup element, method of manufacturing image pickup element, and electronic apparatus
An image pickup element includes: a semiconductor substrate including a photoelectric conversion section for each pixel; a pixel separation groove provided in...
US-9,337,225 Semiconductor device and manufacturing method thereof
A backside illumination semiconductor image sensing device includes a semiconductor substrate. The semiconductor substrate includes a radiation sensitive diode...
US-9,337,224 CMOS image sensor and method of manufacturing the same
A CMOS image sensor has a photodiode including first and second impurity layers sequentially formed on a substrate, an isolation layer on the second impurity...
US-9,337,223 Imaging systems with image pixels having adjustable responsivity
An imaging system may include an image sensor having an array of image pixels. Some image pixels in the array may be provided with responsivity adjustment...
US-9,337,222 Solid-state imaging apparatus
In order to suppress a variation of a signal held by each signal holding unit, a solid-state imaging apparatus of the present invention is characterized in...
US-9,337,220 Solar blind ultra violet (UV) detector and fabrication methods of the same
Described herein is device configured to be a solar-blind UV detector comprising a substrate; a plurality of pixels; a plurality of nanowires in each of the...
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