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Method for manufacturing flexible display device
Disclosed is a method for manufacturing a flexible display device. The method includes: providing a substrate, the substrate having a first surface and the...
Liquid crystal display device and manufacturing method thereof
In the liquid crystal display device in which a guest-host liquid crystal layer is provided between a first substrate having a reflective film which is a pixel...
Display device with barrier layer disposed at pre-cutting position and
manufacturing method thereof
A display device and a manufacturing method thereof are provided, and the display device includes an array substrate, an opposite substrate and sealant frames...
Substrate device and method for manufacturing same
The present invention allows a current leakage path to be reliably disconnected even when a conductive film residue occurs between data wiring lines. An...
Method for fabricating active matrix substrate and method for fabricating
A gate line is formed on a pixel region, and a plurality of wiring layers are formed on a frame region. Next, a gate insulating layer and a semiconductor...
To provide a display device with excellent display quality, in a display device including a signal line, a scan line, a transistor, a pixel electrode, and a...
Semiconductor device and method for manufacturing same
This semiconductor device (100) includes: a gate electrode (3); a gate insulating layer (4); an oxide layer (50) which is formed on the gate insulating layer...
Flexible display substrate and manufacturing method thereof, and flexible
The present invention provides a flexible display substrate, comprising a flexible base; an ultraviolet reflecting layer disposed on the flexible base and...
Backplane of flat panel display and method of manufacturing the same
Provided are a backplane for a flat panel display device and a method of manufacturing the backplane. The method of manufacturing the backplane for a flat panel...
Vertical ferroelectric field effect transistor constructions,
constructions comprising a pair of vertical...
A vertical ferroelectric field effect transistor construction comprises an isolating core. A transition metal dichalcogenide material encircles the isolating...
Semiconductor device and method of fabricating the same
A method of fabricating a semiconductor device, including the following steps. A plurality of fin structures are formed on a substrate. There is a trench...
Semiconductor memory array with air gaps between adjacent gate structures
and method of manufacturing the same
A method of manufacturing a semiconductor device is provided. Gate structures are formed on a substrate, and a first dielectric layer having grooves is formed...
Semiconductor devices including word line interconnecting structures
A semiconductor memory device includes a substrate including a cell region and an interconnection region, adjacent first and second rows of vertical channels...
Semiconductor device, related manufacturing method, and related electronic
A method for manufacturing a semiconductor device may include the following steps: providing a composite structure that includes a gate material layer, a first...
Butted contact shape to improve SRAM leakage current
The present disclosure relates to an SRAM memory cell. The SRAM memory cell has a semiconductor substrate with an active area and a gate region positioned above...
Memory cells are described with cross-coupled inverters including unidirectional gate conductors. Gate conductors for access transistors may also be aligned...
Semiconductor device with line-type air gaps and method for fabricating
A method includes: forming a first contact hole by etching a first inter-layer dielectric layer; forming a preliminary first conductive plug that fills the...
Semiconductor device with air gap and method for fabricating the same
A semiconductor device includes a first conductive structure including a first conductive pattern that is formed over a substrate, a second conductive structure...
Memory cells, arrays of memory cells, and methods of forming memory cells
A memory cell includes a vertically oriented transistor having an elevationally outer source/drain region, an elevationally inner source/drain region, and a...
Dynamic random access memory cell employing trenches located between
lengthwise edges of semiconductor fins
After formation of semiconductor fins in an upper portion of a bulk semiconductor substrate, a shallow trench isolation layer is formed, which includes a...
Semiconductor device and method of fabricating the same
A semiconductor device may include a substrate having a first region and a second region on a surface thereof, and a first semiconductor fin on the first region...
Semiconductor device and method of manufacturing the same
A semiconductor memory device includes a first substrate on which a cell region is defined. In the cell region, memory cells are stacked. A second substrate is...
Semiconductor structure having FinFET ultra thin body and methods of
In one aspect there is set forth herein a semiconductor structure having fins extending upwardly from an ultrathin body (UTB). In one embodiment a multilayer...
III-V FinFET CMOS with III-V and germanium-containing channel closely
Closely spaced III-V compound semiconductor fins and germanium-containing semiconductor fins are provided by utilizing mandrel structures for III-V compound...
Semiconductor devices and methods of manufacture thereof
Semiconductor devices and methods of manufacture thereof are disclosed. In some embodiments, a method of manufacturing a semiconductor device includes providing...
Semiconductor device and method of forming the same
A semiconductor device includes a first NMOS device with a first threshold voltage and a second NMOS device with a second threshold voltage. The first NMOS...
Semiconductor device with epitaxial structures
A semiconductor device includes at least two fin-shaped structures, a gate structure, at least two epitaxial structures and a cap. The fin-shaped structures are...
Metal gate stack having TaAlCN layer
An integrated circuit device includes a semiconductor substrate; and a gate stack disposed over the semiconductor substrate. The gate stack further includes a...
Display device and electronic device
A transistor whose channel region includes an oxide semiconductor is used as a pull down transistor. The band gap of the oxide semiconductor is 2.0 eV or more,...
Semiconductor device including dummy isolation gate structure and method
of fabricating thereof
A device having a first active transistor, a second active transistor, an isolation gate structure, and an active region underlying each of the first active...
According to one embodiment, a semiconductor device includes: a first electrode; a second electrode; a first semiconductor layer provided between the first...
Metal-insulator-metal capacitor structure
A capacitor structure in a semiconductor device includes a semiconductor substrate having a top surface and a bottom surface opposite the top surface, an...
A semiconductor device includes a logic circuit and an active element circuit. The logic circuit is provided with semiconductor elements formed in a...
Semiconductor device and a method for manufacturing a semiconductor device
having a semi-insulating region
A semiconductor device and a method for forming a semiconductor device are provided. The semiconductor device includes a semiconductor body including a...
A semiconductor device includes a first doping region extending from a main surface of a semiconductor substrate into the semiconductor substrate. Further, the...
Display device and electronic device including the same
It is an object to decrease the number of transistors connected to a capacitor. In a structure, a capacitor and one transistor are included, one electrode of...
Transformer input matched transistor
An RF power transistor package includes an input lead, an output lead, and an RF power transistor having a gate, a drain and a defined gain over an RF frequency...
Method to integrate different function devices fabricated by different
The present disclosure is directed to an apparatus and method for manufacture thereof. The apparatus includes a first passive substrate bonded to a second...
Semiconductor device and method of manufacturing same
A semiconductor device includes a substrate, a first trough structure and a second trough structure. The first trough structure which is in the substrate...
Semiconductor device and manufacturing method of semiconductor device
The semiconductor device of the present invention includes: a MOSFET having a gate electrode formed via a gate insulating film over a semiconductor layer and...
Electrostatic discharge protection circuit
An electrostatic discharge (ESD) protection circuit includes a substrate, a semiconductor layer provided on the substrate to have a first conductivity type, a...
Method of forming an ESD device and structure therefor
In one embodiment, an ESD device is configured to include a trigger device that assists in forming a trigger of the ESD device. The trigger device is configured...
Integrated sensor structure
Embodiments of the present invention provide a method for manufacturing an integrated sensor structure. In one step, a semiconductor substrate having integrated...
Light emitting device and method of fabricating the same
A light emitting device and a method of fabricating the same. The light emitting device includes a substrate. A plurality of light emitting cells are disposed...
Semiconductor device for suppressing inductance
According to one embodiment, a semiconductor device includes first to fourth circuit substrates. Each of the first to fourth circuit substrates includes a...
Three-dimensional inter-chip contact through vertical displacement MEMS
An electrically conducting, vertically displacing microelectromechanical system (MEMS) is formed on a first integrated circuit chip. The first integrated...
Provided is a small and thin semiconductor device while preventing contamination of a wire bonding terminal caused by creeping-up of a die bond. The...
Full bridge rectifier module
A full bridge rectifier includes four bipolar transistors, each of which has an associated parallel diode. A first pair of inductors provides inductive current...
Contact arrangements for stackable microelectronic package structures
An apparatus relates generally to a microelectronic assembly. In such an apparatus, a contact arrangements are disposed on a first surface of a first substrate,...
Environmentally-assisted technique for transferring devices onto
A device fabrication method includes: (1) providing a growth substrate including an oxide layer; (2) forming a metal layer over the oxide layer; (3) forming a...