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Patent # Description
US-9,337,219 Method for manufacturing flexible display device
Disclosed is a method for manufacturing a flexible display device. The method includes: providing a substrate, the substrate having a first surface and the...
US-9,337,218 Liquid crystal display device and manufacturing method thereof
In the liquid crystal display device in which a guest-host liquid crystal layer is provided between a first substrate having a reflective film which is a pixel...
US-9,337,217 Display device with barrier layer disposed at pre-cutting position and manufacturing method thereof
A display device and a manufacturing method thereof are provided, and the display device includes an array substrate, an opposite substrate and sealant frames...
US-9,337,216 Substrate device and method for manufacturing same
The present invention allows a current leakage path to be reliably disconnected even when a conductive film residue occurs between data wiring lines. An...
US-9,337,215 Method for fabricating active matrix substrate and method for fabricating display device
A gate line is formed on a pixel region, and a plurality of wiring layers are formed on a frame region. Next, a gate insulating layer and a semiconductor...
US-9,337,214 Display device
To provide a display device with excellent display quality, in a display device including a signal line, a scan line, a transistor, a pixel electrode, and a...
US-9,337,213 Semiconductor device and method for manufacturing same
This semiconductor device (100) includes: a gate electrode (3); a gate insulating layer (4); an oxide layer (50) which is formed on the gate insulating layer...
US-9,337,212 Flexible display substrate and manufacturing method thereof, and flexible display device
The present invention provides a flexible display substrate, comprising a flexible base; an ultraviolet reflecting layer disposed on the flexible base and...
US-9,337,211 Backplane of flat panel display and method of manufacturing the same
Provided are a backplane for a flat panel display device and a method of manufacturing the backplane. The method of manufacturing the backplane for a flat panel...
US-9,337,210 Vertical ferroelectric field effect transistor constructions, constructions comprising a pair of vertical...
A vertical ferroelectric field effect transistor construction comprises an isolating core. A transition metal dichalcogenide material encircles the isolating...
US-9,337,209 Semiconductor device and method of fabricating the same
A method of fabricating a semiconductor device, including the following steps. A plurality of fin structures are formed on a substrate. There is a trench...
US-9,337,208 Semiconductor memory array with air gaps between adjacent gate structures and method of manufacturing the same
A method of manufacturing a semiconductor device is provided. Gate structures are formed on a substrate, and a first dielectric layer having grooves is formed...
US-9,337,207 Semiconductor devices including word line interconnecting structures
A semiconductor memory device includes a substrate including a cell region and an interconnection region, adjacent first and second rows of vertical channels...
US-9,337,206 Semiconductor device, related manufacturing method, and related electronic device
A method for manufacturing a semiconductor device may include the following steps: providing a composite structure that includes a gate material layer, a first...
US-9,337,205 Butted contact shape to improve SRAM leakage current
The present disclosure relates to an SRAM memory cell. The SRAM memory cell has a semiconductor substrate with an active area and a gate region positioned above...
US-9,337,204 Memory cell
Memory cells are described with cross-coupled inverters including unidirectional gate conductors. Gate conductors for access transistors may also be aligned...
US-9,337,203 Semiconductor device with line-type air gaps and method for fabricating the same
A method includes: forming a first contact hole by etching a first inter-layer dielectric layer; forming a preliminary first conductive plug that fills the...
US-9,337,202 Semiconductor device with air gap and method for fabricating the same
A semiconductor device includes a first conductive structure including a first conductive pattern that is formed over a substrate, a second conductive structure...
US-9,337,201 Memory cells, arrays of memory cells, and methods of forming memory cells
A memory cell includes a vertically oriented transistor having an elevationally outer source/drain region, an elevationally inner source/drain region, and a...
US-9,337,200 Dynamic random access memory cell employing trenches located between lengthwise edges of semiconductor fins
After formation of semiconductor fins in an upper portion of a bulk semiconductor substrate, a shallow trench isolation layer is formed, which includes a...
US-9,337,199 Semiconductor device and method of fabricating the same
A semiconductor device may include a substrate having a first region and a second region on a surface thereof, and a first semiconductor fin on the first region...
US-9,337,198 Semiconductor device and method of manufacturing the same
A semiconductor memory device includes a first substrate on which a cell region is defined. In the cell region, memory cells are stacked. A second substrate is...
US-9,337,197 Semiconductor structure having FinFET ultra thin body and methods of fabrication thereof
In one aspect there is set forth herein a semiconductor structure having fins extending upwardly from an ultrathin body (UTB). In one embodiment a multilayer...
US-9,337,196 III-V FinFET CMOS with III-V and germanium-containing channel closely spaced
Closely spaced III-V compound semiconductor fins and germanium-containing semiconductor fins are provided by utilizing mandrel structures for III-V compound...
US-9,337,195 Semiconductor devices and methods of manufacture thereof
Semiconductor devices and methods of manufacture thereof are disclosed. In some embodiments, a method of manufacturing a semiconductor device includes providing...
US-9,337,194 Semiconductor device and method of forming the same
A semiconductor device includes a first NMOS device with a first threshold voltage and a second NMOS device with a second threshold voltage. The first NMOS...
US-9,337,193 Semiconductor device with epitaxial structures
A semiconductor device includes at least two fin-shaped structures, a gate structure, at least two epitaxial structures and a cap. The fin-shaped structures are...
US-9,337,192 Metal gate stack having TaAlCN layer
An integrated circuit device includes a semiconductor substrate; and a gate stack disposed over the semiconductor substrate. The gate stack further includes a...
US-9,337,191 Display device and electronic device
A transistor whose channel region includes an oxide semiconductor is used as a pull down transistor. The band gap of the oxide semiconductor is 2.0 eV or more,...
US-9,337,190 Semiconductor device including dummy isolation gate structure and method of fabricating thereof
A device having a first active transistor, a second active transistor, an isolation gate structure, and an active region underlying each of the first active...
US-9,337,189 Semiconductor device
According to one embodiment, a semiconductor device includes: a first electrode; a second electrode; a first semiconductor layer provided between the first...
US-9,337,188 Metal-insulator-metal capacitor structure
A capacitor structure in a semiconductor device includes a semiconductor substrate having a top surface and a bottom surface opposite the top surface, an...
US-9,337,187 Semiconductor device
A semiconductor device includes a logic circuit and an active element circuit. The logic circuit is provided with semiconductor elements formed in a...
US-9,337,186 Semiconductor device and a method for manufacturing a semiconductor device having a semi-insulating region
A semiconductor device and a method for forming a semiconductor device are provided. The semiconductor device includes a semiconductor body including a...
US-9,337,185 Semiconductor devices
A semiconductor device includes a first doping region extending from a main surface of a semiconductor substrate into the semiconductor substrate. Further, the...
US-9,337,184 Display device and electronic device including the same
It is an object to decrease the number of transistors connected to a capacitor. In a structure, a capacitor and one transistor are included, one electrode of...
US-9,337,183 Transformer input matched transistor
An RF power transistor package includes an input lead, an output lead, and an RF power transistor having a gate, a drain and a defined gain over an RF frequency...
US-9,337,182 Method to integrate different function devices fabricated by different process technologies
The present disclosure is directed to an apparatus and method for manufacture thereof. The apparatus includes a first passive substrate bonded to a second...
US-9,337,181 Semiconductor device and method of manufacturing same
A semiconductor device includes a substrate, a first trough structure and a second trough structure. The first trough structure which is in the substrate...
US-9,337,180 Semiconductor device and manufacturing method of semiconductor device
The semiconductor device of the present invention includes: a MOSFET having a gate electrode formed via a gate insulating film over a semiconductor layer and...
US-9,337,179 Electrostatic discharge protection circuit
An electrostatic discharge (ESD) protection circuit includes a substrate, a semiconductor layer provided on the substrate to have a first conductivity type, a...
US-9,337,178 Method of forming an ESD device and structure therefor
In one embodiment, an ESD device is configured to include a trigger device that assists in forming a trigger of the ESD device. The trigger device is configured...
US-9,337,177 Integrated sensor structure
Embodiments of the present invention provide a method for manufacturing an integrated sensor structure. In one step, a semiconductor substrate having integrated...
US-9,337,175 Light emitting device and method of fabricating the same
A light emitting device and a method of fabricating the same. The light emitting device includes a substrate. A plurality of light emitting cells are disposed...
US-9,337,174 Semiconductor device for suppressing inductance
According to one embodiment, a semiconductor device includes first to fourth circuit substrates. Each of the first to fourth circuit substrates includes a...
US-9,337,173 Three-dimensional inter-chip contact through vertical displacement MEMS
An electrically conducting, vertically displacing microelectromechanical system (MEMS) is formed on a first integrated circuit chip. The first integrated...
US-9,337,172 Semiconductor device
Provided is a small and thin semiconductor device while preventing contamination of a wire bonding terminal caused by creeping-up of a die bond. The...
US-9,337,171 Full bridge rectifier module
A full bridge rectifier includes four bipolar transistors, each of which has an associated parallel diode. A first pair of inductors provides inductive current...
US-9,337,170 Contact arrangements for stackable microelectronic package structures
An apparatus relates generally to a microelectronic assembly. In such an apparatus, a contact arrangements are disposed on a first surface of a first substrate,...
US-9,337,169 Environmentally-assisted technique for transferring devices onto non-conventional substrates
A device fabrication method includes: (1) providing a growth substrate including an oxide layer; (2) forming a metal layer over the oxide layer; (3) forming a...
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