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Patent # Description
US-9,343,674 Cross-point memory utilizing Ru/Si diode
Memory devices utilizing memory cells including a resistive element and a diode coupled in series between two conductors. The diodes include a ruthenium...
US-9,343,673 Method for forming metal oxides and silicides in a memory device
Embodiments of the invention generally relate to memory devices and methods for fabricating such memory devices. In one embodiment, a method for fabricating a...
US-9,343,672 Nonvolatile memory devices, nonvolatile memory cells and methods of manufacturing nonvolatile memory devices
A nonvolatile memory cell includes first and second interlayer insulating films which are separated from each other and are stacked sequentially, a first...
US-9,343,671 Memory cells having heaters with angled sidewalls
Memory cells having heaters with angled sidewalls and methods of forming the same are described herein. As an example, a method of forming an array of resistive...
US-9,343,670 Memory arrays and methods of forming same
Memory arrays and methods of forming the same are provided. One example method of forming a memory array can include forming a first conductive material having...
US-9,343,669 Semiconductor structures and devices including conductive lines and peripheral conductive pads
Semiconductor devices and structures, such as phase change memory devices, include peripheral conductive pads coupled to peripheral conductive contacts in a...
US-9,343,668 Low temperature in-situ doped silicon-based conductor material for memory cell
Providing for two-terminal memory cell structures and fabrication that can be achieved with a relatively low temperature process(es) is described herein. By way...
US-9,343,667 Circuits having programmable impedance elements and vertical access devices
A memory device can include at least one programmable impedance cell having at least one programmable layer formed between a first terminal and a second...
US-9,343,666 Damascene metal-insulator-metal (MIM) device with improved scaleability
A present method of fabricating a memory device includes the steps of providing a dielectric layer, providing an opening in the dielectric layer, providing a...
US-9,343,665 Methods of forming a non-volatile resistive oxide memory cell and methods of forming a non-volatile resistive...
A method of forming a non-volatile resistive oxide memory cell includes forming a first conductive electrode of the memory cell as part of a substrate. Metal...
US-9,343,664 Pattern fortification for HDD bit patterned media pattern transfer
A method and apparatus for forming a magnetic layer having a pattern of magnetic properties on a substrate is described. The method includes using a metal...
US-9,343,662 Magnetic memory device and method of forming thereof
A device and a method of forming a device are presented. A substrate is provided. Front end of line processing is performed to form circuit component on the...
US-9,343,661 Non-reactive photoresist removal and spacer layer optimization in a magnetoresistive device
In forming a top electrode for a magnetoresistive device, photoresist used in patterning the electrode is stripped using a non-reactive stripping process. Such...
US-9,343,660 Magnetic memory device
A magnetic memory device is provided. The magnetic memory device includes a first vertical magnetic layer and a second vertical magnetic layer on a substrate, a...
US-9,343,659 Embedded magnetoresistive random access memory (MRAM) integration with top contacts
A magnetoresistive random access memory (MRAM) device includes a top electrode or top contact above a metal hard mask which has a limited height due to process...
US-9,343,658 Magnetic memory bits with perpendicular magnetization switched by current-induced spin-orbit torques
A basic Spin-Orbit-Torque (SOT) structure with lateral structural asymmetry is provided that produces a new spin-orbit torque, resulting in zero-field...
US-9,343,657 Storage element, storage apparatus, and magnetic head
There is provided a storage element including a layered construction including a storage layer that has magnetization perpendicular to a surface of the storage...
US-9,343,656 Magnetic tunnel junction (MTJ) structure in magnetic random access memory
Methods and apparatuses for a magnetic tunnel junction (MTJ) which can be used in as a magnetic random access memory cell are disclosed. The MTJ comprises a...
US-9,343,655 Method for manufacturing bimorph actuator
To manufacture a switching apparatus that includes a piezoelectric actuator with increased lifespan, provided is a method for manufacturing a bimorph actuator,...
US-9,343,654 Method of manufacturing implantable wireless acoustic stimulators with high energy conversion efficiencies
Receiver-stimulator with folded or rolled up assembly of piezoelectric components, causing the receiver-stimulator to operate with a high degree of isotropy are...
US-9,343,653 Piezoelectric element including fluororesin film
There is provided a piezoelectric element, including: a porous fluororesin film made of a first fluororesin; and a nonporous fluororesin layer stacked on at...
US-9,343,652 Method for producing a piezoelectric multilayer component and a piezoelectric multilayer component
A method for producing a piezoelectric multilayer component is disclosed. Piezoelectric green films and electrode material are provided, arranged alternately on...
US-9,343,651 Organic packaging carrier
An organic packaging carrier is provided. The organic packaging carrier includes an organic substrate, a conductive circuit layer, and a sealing metal layer....
US-9,343,650 Piezoelectric material, piezoelectric element, multilayered piezoelectric element, liquid ejection head, liquid...
Provided is a lead-free piezoelectric material having a satisfactory and stable piezoelectric constant and electric insulation property in a wide practical...
US-9,343,649 Method for producing smooth inner surfaces
The invention provides a method for preparing superconducting cavities, the method comprising causing polishing media to tumble by centrifugal barrel polishing...
US-9,343,648 Method for manufacturing a thermoelectric device, particularly intended to generate an electric current in a...
The invention relates to a method of manufacturing a thermoelectric device comprising a plurality of thermoelectric components (4) for creating an electric...
US-9,343,647 Position detection device
A position detection device includes a thermoelectric conversion portion which includes a magnetic layer and a plurality of electrodes. The magnetic layer has...
US-9,343,646 Thermo-electric power harvesting bearing configuration
A power generating bearing assembly (100) comprises a bearing subassembly (120) retained by a bearing housing (110). During operation, friction and other...
US-9,343,645 Thermo-electric power harvesting bearing configuration
A power generating bearing assembly (100) comprises a bearing subassembly (120) retained by a bearing housing (110). During operation, friction and other...
US-9,343,644 Light emitting diode module for surface mount technology and method of manufacturing the same
Provided is a light emitting diode (LED) in which a side surface of a reflective metal layer has a predetermined angle, and occurrence of cracks in a conductive...
US-9,343,643 Light emitting device
A light emitting device has: a first lead which is mounted a light emitting element, a second lead separated by an interval from the first lead, an insulating...
US-9,343,642 Optoelectronic semiconductor chip
An optoelectronic semiconductor chip includes a carrier including a carrier element having a mounting side; one electrically conductive n-type wiring layer...
US-9,343,641 Non-reactive barrier metal for eutectic bonding process
A eutectic metal layer (e.g., gold/tin) bonds a carrier wafer structure to a device wafer structure. In one example, the device wafer structure includes a...
US-9,343,640 Light emitting device, light emitting device package and lighting system including the same
A light emitting device is described, including a second conductive type semiconductor layer; an active layer over the second conductive type semiconductor...
US-9,343,639 Light emitting diode (LED) device having lens protective structure and method of fabrication
A light emitting diode (LED) device includes a substrate, a light emitting diode (LED) die mounted to the substrate configured to emit electromagnetic...
US-9,343,638 Electro-optic PN junction modulator formed with a self-aligned process
An electro-optic device, comprising a layer of light-carrying material; and a rib, projecting from the layer of light-carrying material, for guiding optical...
US-9,343,637 Optoelectronic semiconductor chip and method for producing optoelectronic semiconductor chips
An optoelectronic semiconductor chip has a semiconductor body and a substrate on which the semiconductor body is disposed. The semiconductor body has an active...
US-9,343,636 Wavelength conversion element, light-emitting semiconductor device and display apparatus therewith, and method...
A wavelength conversion element including at least two ceramic conversion segments each including a ceramic wavelength conversion substance and connected...
US-9,343,635 Light conversion light-emitting device with enhanced luminescence efficiency using anisotropic metal nanoparticles
There is provided a light-emitting device with enhanced luminescence efficiency, which simultaneously exhibits excitation enhancement and emission enhancement...
US-9,343,634 Light emitting device
Disclosed are a light emitting device. The light emitting device comprises a board comprising a plurality of lead frames, a light emitting diode chip...
US-9,343,633 Light-emitting diode lighting device
A light-emitting diode (LED) lighting device includes a substrate, a first bottom electrode, a second bottom electrode, a first bottom transparent isolation...
US-9,343,632 Encapsulation housing and LED module with the same
An encapsulation housing for a LED module, may include an upper housing and a lower housing joined together and defining together a cavity, wherein at least one...
US-9,343,631 Light emitting diode chip having distributed bragg reflector and method of fabricating the same
A light-emitting diode chip configured to emit light of a first wavelength range and light of a second wavelength range, including a substrate, a light-emitting...
US-9,343,630 Semiconductor light emitting element
A semiconductor light emitting element includes a semiconductor laminated body comprising a first conductivity type layer, a light emitting layer and a second...
US-9,343,629 Light emitting device
A light emitting device including a light emitting structure having a first semiconductor layer, a second semiconductor layer, and an active layer between the...
US-9,343,628 Semiconductor light emitting device
A light emitting device includes a first layer of a first conductivity type, a second layer of a second conductivity type, and a light emitting layer between...
US-9,343,627 Electronic device comprising semiconductor memory having ohmic-contact structure separated from current...
Disclosed are an LED and an LED module. The LED includes: a first conductivity type semiconductor layer; a mesa disposed over the first conductivity type...
US-9,343,626 Semiconductor structures having active regions comprising InGaN, methods of forming such semiconductor...
Semiconductor structures include an active region between a plurality of layers of InGaN. The active region may be at least substantially comprised by InGaN....
US-9,343,625 Semiconductor light emitting diode and method for manufacturing the same
A semiconductor light emitting diode is provided. The semiconductor light emitting diode comprises a metal electrode; an n-type cladding over the metal...
US-9,343,624 Light emitting device and method of manufacturing the same
A light emitting device is disclosed. The light emitting device includes a conductive support layer; a reflective layer disposed on the conductive support...
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