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Patent # Description
US-9,343,623 Horizontal power LED device and method for manufacturing same
The present invention relates to a horizontal LED device and a method of manufacturing the same. More particularly, the present invention relates to a...
US-9,343,622 Nitride semiconductor light emitting device and fabrication method thereof
Provided is a nitride semiconductor light emitting device including: a substrate; a first buffer layer formed above the substrate; an indium-containing second...
US-9,343,621 Liquid crystal display panel and manufacturing method thereof
A liquid crystal display panel includes a substrate, a thin film transistor array, a circuit, and a dummy circuit. One surface of the substrate is divided into...
US-9,343,620 Method for fabricating a light emitting diode (LED) die having protective substrate
A method for fabricating a light emitting diode die includes the steps of providing a carrier substrate and forming an epitaxial structure on the carrier...
US-9,343,619 Group III nitride semiconductor light-emitting device and method for producing the same
The present invention provides a Group III nitride semiconductor light-emitting device exhibiting high light efficiency achieved by relaxing a piezoelectric...
US-9,343,618 Method of manufacturing light-emitting device
A method of manufacturing a light-emitting device includes providing a case including an annular sidewall and an LED chip including a chip substrate and a...
US-9,343,617 Method of manufacturing light emitting element
A method of producing light emitting elements includes providing a wafer that includes a growth substrate and a semiconductor structure formed on the growth...
US-9,343,616 Heterojunction light emitting diode
A method for forming a light emitting device includes forming a monocrystalline III-V emissive layer on a monocrystalline substrate and forming a first doped...
US-9,343,615 Method for producing an optoelectronic semiconductor chip and optoelectronic semiconductor chip
A method of producing an optoelectronic semiconductor chip includes providing a growth substrate, producing a III nitride nucleation layer on the growth...
US-9,343,614 Superluminescent diode, method of manufacturing the same, and wavelength-tunable external cavity laser...
Provided are a high-speed superluminescent diode, a method of manufacturing the same, and a wavelength-tunable external cavity laser including the same. The...
US-9,343,613 Phosphor in inorganic binder for LED applications
A method for fabricating an LED/phosphor structure is described where an array of blue light emitting diode (LED) dies are mounted on a submount wafer. A...
US-9,343,612 Method of bonding a semiconductor device to a support substrate
A method according to embodiments of the invention includes providing a wafer of semiconductor devices grown on a growth substrate. The wafer of semiconductor...
US-9,343,611 Method for producing interconnected optoelectronic components, and interconnected optoelectronic components
The invention relates to a method for producing serially interconnected optoelectronic components as well as optoelectronic components interconnected according...
US-9,343,610 Device and method for precipitating a layer on a substrate
The invention relates to a device for depositing a layer made of at least two components on an object, with a deposition chamber for disposing the object, at...
US-9,343,609 Mesoscopic optoelectronic devices comprising arrays of semiconductor pillars deposited from a suspension and...
The invention illustrates an innovative way to fabricate low cost, efficient, rigid or flexible mesoscopic optoelectronic devices such as photovoltaic (PV)...
US-9,343,608 Depletion-mode field-effect transistor-based phototransistor
A depletion-mode phototransitor is disclosed. The phototransistor having a substrate, a gate, a source, a drain and a channel. The source, drain and channel are...
US-9,343,607 PN-structured gate demodulation pixel
A novel photo-sensitive element for electronic imaging purposes and, in this context, is particularly suited for time-of-flight 3D imaging sensor pixels. The...
US-9,343,606 Solar cell structures, photovoltaic panels and corresponding processes
Photovoltaic modules comprise solar cells having doped domains of opposite polarities along the rear side of the cells. The doped domains can be located within...
US-9,343,605 Photovoltaic equipment
A photovoltaic unit can minimally reduce a displacement of focus positions from solar cells and prevent a decrease in power generation efficiency even if...
US-9,343,604 Process for monolithic series connection of the photovoltaic cells of a solar module and a photovoltaic module...
A method for manufacturing two series-connected photovoltaic cells includes: forming an insulating substrate; forming a stack including; a first conductive...
US-9,343,603 Method for manufacturing solar cell module and laminator
By increasing a pressure in a chamber flange (10) at a predetermined rate, the number of gas molecules that carry inner thermal energy is increased, which...
US-9,343,602 Solar cell unit and method for manufacturing the same
The present invention provides a solar cell unit, which comprises a semiconductor plate of first-type doping or second-type doping; wherein the semiconductor...
US-9,343,601 Photodetector
Provided is a photodetector including a graphene p-n homogeneous vertical-junction diode by evaluating photodetection characteristics of the manufactured...
US-9,343,600 Integrated microinverter housing for a PV AC module
Systems and devices relating to an integrated housing for microinverters. The housing has a cavity for housing the circuitry of the microinverter. The housing...
US-9,343,599 Solar cell and method for manufacturing the same
A method of manufacturing a solar cell includes forming jagged portions non-uniformly on a surface of a substrate, forming a first type semiconductor and a...
US-9,343,598 Solar cell
A solar cell includes a back electrode, a silicon substrate, a doped silicon layer and an upper electrode arranged in that order. The silicon substrate...
US-9,343,597 Image pickup apparatus and camera module
An image pickup apparatus includes an optical device, a transparent conductive film, an electrode pad, and a penetrating electrode. In the optical device, an...
US-9,343,596 Method for producing at least one radiation-emitting and/or -receiving semiconductor component, and...
A method for producing a radiation-emitting or radiation-receiving semiconductor component is specified. In a method step, a carrier body having a mounting...
US-9,343,595 Photovoltaic devices with electroplated metal grids
One embodiment of the present invention provides a solar cell. The solar cell includes a photovoltaic structure and a front-side metal grid situated above the...
US-9,343,594 Conductive composition, conductive member and production method thereof, touch panel, and solar cell
A conductive composition includes at least: a) metal conductive fibers having an average minor axis length of from 1 nm to 150 nm; and b) a compound represented...
US-9,343,593 Printable composition of a liquid or gel suspension of diodes
An exemplary printable composition of a liquid or gel suspension of diodes comprises a plurality of diodes, a first solvent and/or a viscosity modifier. In...
US-9,343,592 Electrical interconnects for photovoltaic modules and methods thereof
System and method for interconnecting photovoltaic modules. The system includes a first photovoltaic module and a second photovoltaic module. The first...
US-9,343,591 Methods of printing solar cell contacts
Silicon solar cells and contacts thereof are printed in at least a two stage printing process where the busbars and fingerlines may be printed separately. A...
US-9,343,590 Planar semiconductor ESD device and method of making same
An ESD device is provided for protecting a circuit from electrostatic discharge, and includes a planar diode having an anode and a cathode. The anode is...
US-9,343,589 Field effect transistor (FET) with self-aligned double gates on bulk silicon substrate, methods of forming, and...
At least one isolation trench formed in a layer stack including substrate, channel, and upper gate layers define a channel in the channel layer. Lateral etching...
US-9,343,588 Normally-off semiconductor switches and normally-off JFETs
A normally-off JFET is provided. The normally-off JFET includes a channel region of a first conductivity type, a floating semiconductor region of a second...
US-9,343,587 Field effect transistor with self-adjusting threshold voltage
Methods for forming field effect transistors (FETs) with improved ON/OFF current ratios in addition to short charging times and the resulting devices are...
US-9,343,586 Thin film transistor
Provided is a thin film transistor having an oxide semiconductor layer that has high mobility, excellent stress resistance, and good wet etching property. The...
US-9,343,585 Semiconductor device and method for manufacturing the same
A highly reliable semiconductor device is provided. A semiconductor device is manufactured at a high yield, so that high productivity is achieved. In a...
US-9,343,584 Semiconductor device and method for manufacturing the same
An object is to provide a semiconductor device including an oxide semiconductor film, which has stable electrical characteristics and high reliability. A stack...
US-9,343,583 Thin film transistor and thin film transistor array panel including the same
A thin film transistor, a thin film transistor array panel including the same, and a method of manufacturing the same are provided, wherein the thin film...
US-9,343,582 Manufacturing method of thin film transistor substrate
An embodiment of the invention provides a manufacturing method of a thin film transistor substrate including: sequentially forming a gate electrode, a gate...
US-9,343,581 Semiconductor device
To provide a transistor with stable electrical characteristics, a transistor with a low off-state current, a transistor with a high on-state current, a...
US-9,343,580 Semiconductor device
A semiconductor device (100a) with a thin-film transistor (10a) includes: a gate electrode (62) formed on a substrate (60); a gate insulating layer (66) formed...
US-9,343,579 Semiconductor device
To provide a semiconductor device that includes an oxide semiconductor and is miniaturized while keeping good electrical properties. In the semiconductor...
US-9,343,578 Semiconductor device and measurement device
A semiconductor device includes an oxide semiconductor layer over a first oxide layer; first source and drain electrodes over the oxide semiconductor layer;...
US-9,343,577 Thin film transistor, display apparatus including the thin film transistor, and method of manufacturing the...
A thin film transistor includes: a substrate, a semiconductor layer disposed on the substrate, a first gate electrode and a second gate electrode disposed on...
US-9,343,576 Thin film forming method, semiconductor substrate and electronic device produced by employing same
The present invention provides a thin film forming method. The method includes the steps of: providing a first substrate, of which a surface is covered with a...
US-9,343,575 FinFET and method of manufacturing the same
A FinFET includes a fin structure, a gate and a source-drain region. The fin structure is over a substrate and has a recess of an upper surface of the fin...
US-9,343,574 Non-planar semiconductor device having group III-V material active region with multi-dielectric gate stack
Non-planar semiconductor devices having group III-V material active regions with multi-dielectric gate stacks are described. For example, a semiconductor device...
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