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Method of producing aperture member
In one embodiment, an aperture member producing method includes applying a charged particle beam to a plurality of chip areas on a first substrate while...
Three dimensional stacking memory film structure
A memory device includes a plurality of stacks of alternating active strips and insulating strips. The insulating strips have effective oxide thicknesses (EOT)...
Chemical mechanical planarization using nanodiamond
A method for chemical mechanical polishing of a substrate includes polishing the substrate at a stock removal rate of greater than about 2.5 .ANG./min to...
Pattern factor dependency alleviation for eDRAM and logic devices with
disposable fill to ease deep trench...
Dummy deep trenches can be formed within a logic device region in which logic devices are to be formed while deep trench capacitors are formed within a memory...
Inspection method and method of manufacturing semiconductor device
First, a product to be inspected is prepared. The product to be inspected includes a substrate and a first film formed on the substrate. TDS is performed while...
Salicide formation using a cap layer
A semiconductor device having a source feature and a drain feature formed in a substrate. The semiconductor device having a gate stack over a portion of the...
Methods of forming silicon-containing dielectric materials and
semiconductor device structures
A method of forming a silicon-containing dielectric material. The method includes forming a plasma comprising nitrogen radicals, absorbing the nitrogen radicals...
Methods of forming memory cells with air gaps and other low dielectric
Various embodiments include methods of forming memory cells. In one embodiment, a first dielectric material and a second dielectric material are formed on a...
Method for fabricating semiconductor structure, and solid precursor
A method for fabricating a semiconductor structure is provided, including: providing a solid precursor having a first average particle size; solving the solid...
Split gate nanocrystal memory integration
A method of making a split gate non-volatile memory (NVM) includes forming a charge storage layer on the substrate, depositing a first conductive layer, and...
Heat treatment method and heat treatment apparatus for heating substrate
by irradiating substrate with light
First irradiation which causes an emission output from a flash lamp to reach its maximum value over a time period in the range of 1 to 20 milliseconds is...
High temperature intermittent ion implantation
A method includes providing a semiconductor substrate, and performing an ion implantation process to a surface of the substrate. The ion implantation process...
Substrate treatment method
A substrate having a native oxide film formed on its surface is heated in a hydrogen atmosphere to reduce silicon dioxide to hydrogen. Additionally, silicon...
Methods of forming conductors and semiconductors on a substrate
An apparatus and a method are disclosed for forming electrical conductors and/or semiconductors on a glass substrate. The electrical conductors and/or...
Lateral oxidation process flows
Methods of laterally oxidizing features of a patterned substrate are described. A capping layer may be disposed above lateral features to laterally confine the...
Method for trimming carbon-containing film at reduced trimming rate
A method for trimming a carbon-containing film includes: (i) providing a substrate having a carbon-containing film formed thereon; (ii) supplying a trimming gas...
Laser spike annealing using fiber lasers
The disclosure is directed to laser spike annealing using fiber lasers. The method includes performing laser spike annealing of a surface of a wafer by:...
Method of fabricating thin film transistor array substrate having
polysilicon with different grain sizes
A thin film transistor array substrate includes a substrate, a plurality of poly-silicon islands and a plurality of gates. The substrate has a display region, a...
Method and device for continuously coating substrates
The invention relates to a method for the continuous coating of at least one substrate 14 with a semiconductor material e.g. CdTe. To this end a semiconductor...
Method for depositing films on semiconductor wafers
An exemplary embodiment of the present invention provides a method of depositing of a film on semiconductor wafers. In a first step, a film thickness of 3 um or...
Methods of forming low-defect strain-relaxed layers on lattice-mismatched
substrates and related semiconductor...
Methods of forming strain-relaxing semiconductor layers are provided in which a porous region is formed in a surface of a semiconductor substrate. A first...
Silicon germanium and germanium multigate and nanowire structures for
logic and multilevel memory applications
A method to provide a transistor or memory cell structure. The method comprises: providing a substrate including a lower Si substrate and an insulating layer on...
Quantum dots made using phosphine
A process is disclosed for producing quantum dots (QDs) by reacting one or more core semiconductor precursors with phosphine in the presence of a molecular...
Methods of forming source/drain regions for a PMOS transistor device with
a germanium-containing channel region
The present disclosure is directed to forming relatively abrupt junctions between the channel region and source/drain regions of a PMOS transistor device with a...
Trench formation method for releasing a substrate from a semiconductor
A method is provided for fabricating a semiconductor substrate by forming a porous semiconductor layer conformally on a semiconductor template and then forming...
Metal-insulator-metal capacitor and method for manufacturing thereof
The disclosure provides a method for producing a stack of layers on a semiconductor substrate. The method includes producing a substrate a first conductive...
Method for forming multi-element thin film constituted by at least five
elements by PEALD
A single-phase multi-element film constituted by at least four elements is formed on a substrate by plasma-enhanced atomic layer deposition (PEALD) conducting...
Apparatuses and methods for depositing SiC/SiCN films via cross-metathesis
reactions with organometallic...
Disclosed herein are methods of forming SiC/SiCN film layers on surfaces of semiconductor substrates. The methods may include introducing a silicon-containing...
Vaporizing unit, film forming apparatus, film forming method, computer
program and storage medium
A vaporizing unit, in supplying a gas material produced by vaporizing a liquid material onto a substrate to conduct a film forming process, can vaporize the...
Interconnect structure having air gap and method of forming the same
A method for forming a semiconductor device includes forming a first dielectric layer overlying a substrate, forming at least a first opening in the first...
Flowable silicon--carbon--oxygen layers for semiconductor processing
Methods are described for forming a dielectric layer on a patterned substrate. The methods may include combining a silicon-and-carbon-containing precursor and a...
Stacked semiconductor device, and method and apparatus of manufacturing
Provided is a method of manufacturing a stacked semiconductor device, which includes forming a stacked film on a semiconductor substrate, the stacked film...
Method for forming an interfacial layer on a semiconductor using hydrogen
Techniques include a method of forming an interfacial passivation layer between a first semiconductor material (such as germanium) and a high-k gate dielectric....
Method of manufacturing semiconductor device, substrate processing
apparatus, and recording medium
A method of manufacturing a semiconductor device includes forming an oxide film on a substrate by performing a cycle a predetermined number of times. The cycle...
Chemistry compatible coating material for advanced device on-wafer
To manufacture a coating for an article for a semiconductor processing chamber, the article including a body of at least one of Al, Al.sub.2O.sub.3, or SiC, and...
To increase the degree of integration of a semiconductor device such as a DCDC converter. In a semiconductor device (e.g., DCDC converter) including a...
Substrate processing apparatus including spin chuck
A substrate processing apparatus includes a plurality of chuck pins and a heat source. The chuck pin includes a conductive member made of a material containing...
Lamp with electrical components embedded in an insulation compound
A lamp (10) is described comprising a burner (14) fixed to a lamp base (12). The lamp base (12) includes a top wall oriented towards the burner (14). Within the...
Annular ion guide
An annular ion guide is disclosed comprising inner and outer electrodes. Ions are confined within an annular ion guiding region by RF or pseudo-potential...
Ion trap mass spectrometer
An electrostatic mass spectrometer and a method of mass spectrometric analysis utilizing novel traps are disclosed. The mass spectrometer includes an ion...
Internal standardization with enriched stable isotopes and cool plasma
A method for internal standardization of cool plasma ICP-MS using one or more enriched stable isotopes includes introducing an enriched stable isotope of a...
Systems and methods for using interleaving window widths in tandem mass
Systems and methods are provided for analyzing a sample using overlapping measured mass selection window widths. A mass range of a sample is divided into two or...
Methods and apparatus for increased ion throughput in tandem mass
In a tandem mass spectrometry system, a first mass analyzer filters parent ions using a wide mass passband with a narrow rejection notch defined according to a...
Multi-pressure stage mass spectrometer and methods
A mass spectrometer includes a plurality of guide stages for guiding ions between an ion source and an ion detector along a guide axis. Each of the guide stages...
Data independent acquisition of product ion spectra and reference spectra
Systems and methods are disclosed for identifying detectable compounds of a sample. Sample product ion spectra are received for each mass selection window of...
Data independent acquisition of product ion spectra and reference spectra
Systems and methods are disclosed for quantitating detectable compounds of a sample. Sample product ion spectra are received for each mass selection window for...
Parsing events during MS.sup.3 experiments
Systems and methods are provided for reducing the time period of a CID event of an MS.sup.3 experiment and making the overall fragmentation event more generic....
Use of windowed mass spectrometry data for retention time determination or
A scan of a separating sample is received by a mass spectrometer at each interval of a plurality of intervals. The spectrometer performs at each interval one or...
Methods for characterizing carbon overcoat
A method for characterizing a carbon overcoat is provided. The method includes performing electron energy loss spectroscopy (EELS) spectrum imaging for an area...
Process kit shield for plasma enhanced processing chamber
Apparatus for processing substrates is disclosed herein. In some embodiments, an apparatus includes a first shield having a first end, a second end, and one or...