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Patent # Description
US-9,349,822 Semiconductor device and method for fabricating the same
A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having an interlayer dielectric (ILD) layer...
US-9,349,821 Electrode structure, method of fabricating the same, and semiconductor device including the electrode structure
An electrode structure is disclosed. The electrode structure includes a first polysilicon layer doped with resistance adjustment impurities; a second...
US-9,349,820 Method for manufacturing semiconductor device
An object is to provide a semiconductor device having good electrical characteristics. A gate insulating layer having a hydrogen concentration less than...
US-9,349,819 Heterojunction semiconductor device and manufacturing method
Disclosed is a semiconductor device comprising a group 13 nitride heterojunction comprising a first layer having a first bandgap and a second layer having a...
US-9,349,818 Metal-oxide-semiconductor transistor device having a drain side dummy contact
A MOS transistor device includes a substrate including a gate formed thereon, and a spacer being formed on a sidewall of the gate; a source region and a drain...
US-9,349,817 Semiconductor device including spacers having different dimensions
Embodiments of the disclosure provide semiconductor device structures and methods of forming the same. The semiconductor device structure includes a metal gate...
US-9,349,816 Method of manufacturing semiconductor device with offset sidewall structure
A method of manufacturing a semiconductor device with NMOS and PMOS transistors is provided. The semiconductor device can lessen a short channel effect, can...
US-9,349,815 Semiconductor structure and a fabricating method thereof
A gate structure is provided. The gate structure includes a substrate, a gate disposed on the substrate and a gate dielectric layer disposed between the...
US-9,349,814 Gate height uniformity in semiconductor devices
Methods of facilitating gate height uniformity by controlling recessing of dielectric material and semiconductor devices formed from the methods are provided....
US-9,349,813 Method for fabricating semiconductor device
A method for fabricating a semiconductor device includes forming at least two gate patterns on a substrate, forming sidewalls surrounding the gate patterns,...
US-9,349,812 Semiconductor device with self-aligned contact and method of manufacturing the same
A semiconductor device with a self-aligned contact and a method of manufacturing the same, wherein the method comprises the step of forming a 1st dielectric...
US-9,349,811 Field plate configuration of a semiconductor device
A semiconductor device includes a semiconductor substrate having a principal surface, and an insulating film formed on the principal surface and continuously...
US-9,349,810 Selective germanium P-contact metalization through trench
Techniques are disclosed for forming transistor devices having reduced parasitic contact resistance relative to conventional devices. The techniques can be...
US-9,349,809 Aspect ratio trapping and lattice engineering for III/V semiconductors
A method of forming a semiconductor structure. The method may include; forming a hardmask on a strained semiconductor, the strained semiconductor is on a...
US-9,349,808 Double aspect ratio trapping
A semiconductor structure is provided by a process in which two aspect ratio trapping processes are employed. The structure includes a semiconductor substrate...
US-9,349,807 Semiconductor device having GaN-based layer
A semiconductor device includes a first conductivity type semiconductor substrate including one of Si and SiC; a second conductivity type semiconductor region...
US-9,349,806 Semiconductor structure with template for transition metal dichalcogenides channel material growth
Disclosed is a semiconductor structure comprising a single crystal substrate, a channel layer formed above the substrate from a transition metal dichalcogenides...
US-9,349,805 III-n device with dual gates and field plate
A semiconductor apparatus includes a substrate; a first semiconductor layer formed on the substrate and formed of a nitride semiconductor; a second...
US-9,349,804 Composite wafer for bonding and encapsulating an SiC-based functional layer
A composite wafer includes a substrate and a SiC-based functional layer. The substrate includes a porous carbon substrate core and an encapsulating layer...
US-9,349,803 Semiconductor graphene structures, semiconductor devices including such structures, and related methods
A semiconducting graphene structure may include a graphene material and a graphene-lattice matching material over at least a portion of the graphene material,...
US-9,349,802 Memory devices including two-dimensional material, methods of manufacturing the same, and methods of operating...
Disclosed are memory devices including a two-dimensional (2D) material, methods of manufacturing the same, and methods of operating the same. A memory device...
US-9,349,801 Method and system for diamond-based oxygen sensor
A diamond based oxygen sensor is able to function in harsh environment conditions. The oxygen sensor includes a gateless field effect transistor including a...
US-9,349,800 Semiconductor device
A semiconductor device according to an embodiment includes: a first diamond semiconductor layer of a first conductivity type including a main surface having a...
US-9,349,799 Adjusting the charge carrier lifetime in a bipolar semiconductor device
Disclosed are a method and a semiconductor device. The method includes implanting recombination center atoms via a first surface into a semiconductor body, and...
US-9,349,798 CMOS structures with selective tensile strained NFET fins and relaxed PFET fins
A method of forming CMOS structures with selective tensile strained NFET fins and relaxed PFET fins includes performing a first, partial fin etch on a tensile...
US-9,349,797 SiC devices with high blocking voltage terminated by a negative bevel
The present disclosure relates to a Silicon Carbide (SiC) semiconductor device having both a high blocking voltage and low on-resistance. In one embodiment, the...
US-9,349,796 Nanotube semiconductor devices
Semiconductor devices includes a thin epitaxial layer (nanotube) formed on sidewalls of mesas formed in a semiconductor layer. In one embodiment, a...
US-9,349,795 Semiconductor switching device with different local threshold voltage
A semiconductor device includes a semiconductor substrate having a plurality of switchable cells defining an active area of the semiconductor device, an outer...
US-9,349,794 Layer arrangement
A layer arrangement in accordance with various embodiments may include: a first layer having a side; one or more nanoholes in the first layer that are open...
US-9,349,793 Semiconductor structure with airgap
A field effect transistor (FET) with an underlying airgap and methods of manufacture are disclosed. The method includes forming an amorphous layer at a...
US-9,349,792 Super junction semiconductor device having columnar super junction regions
A super junction semiconductor device includes a semiconductor portion with a first surface and a second surface parallel to the first surface. The...
US-9,349,791 Semiconductor device having oxide semiconductor channel
It is an object to provide a semiconductor device having a new productive semiconductor material and a new structure. The semiconductor device includes a first...
US-9,349,790 Power electronic devices
A semiconductor device or power electronic device is described. The device includes a pair of pole pieces, each having a profiled surface. A semiconductor body...
US-9,349,789 Coaxial carbon nanotube capacitor for eDRAM
A deep trench (DT) opening is provided in a semiconductor substrate and then conducting carbon nanotubes are formed within the DT. Each conducting carbon...
US-9,349,788 Thin film capacitors embedded in polymer dielectric
A substrate comprising a capacitor comprising metal electrodes and a ceramic or metal oxide dielectric layer, the capacitor being embedded in a polymer based...
US-9,349,787 Integrated circuits with capacitors and methods of producing the same
Integrated circuits and methods for producing the same are provided. A method for producing an integrated circuit includes forming a capacitor trench through a...
US-9,349,786 Fractal structures for fixed MEMS capacitors
An embodiment of a fractal fixed capacitor comprises a capacitor body in a microelectromechanical system (MEMS) structure. The capacitor body has a first plate...
US-9,349,785 Formation of semiconductor device with resistors
A semiconductor device includes a semiconductor substrate, trench isolations, a sacrificial layer, a first resist protect oxide (RPO) layer, a second RPO layer...
US-9,349,784 Organic light-emitting display apparatus and method of manufacturing the same
An organic light-emitting display apparatus includes: a substrate; a thin film transistor formed on the substrate; a pixel electrode connected to at least one...
US-9,349,783 Display device
A display device includes at least two subpixels arranged in a first direction, a first data line connected to a first subpixel of the two subpixels, and a...
US-9,349,782 Organic light emitting diode display
An organic light emitting diode (OLED) display including a substrate; a scan line formed on the substrate and applying a scan signal; a data line and a driving...
US-9,349,781 Organic light emitting diode display and method of manufacturing the same
An organic light emitting diode display includes: a substrate; a semiconductor layer formed on the substrate and including a switching semiconductor layer, a...
US-9,349,780 Transparent organic light emitting display device and method for manufacturing the same
A transparent organic light emitting display device and a method of manufacturing the transparent organic light emitting display device are provided. The...
US-9,349,779 Organic light emitting display device
An organic light emitting display (OLED) device is disclosed. The OLED device includes a substrate configured to include a sub-pixel defined into an emission...
US-9,349,778 Polymer film, flexible light emitting element display device, and rollable display device
The present invention relates to a polymer film containing a binder resin and polyrotaxane having a specific structure, and a flexible light emitting element...
US-9,349,777 Display device and operating method thereof
A display device including a bendable display panel, and an operation method thereof. The display device includes a display panel including a flexible substrate...
US-9,349,776 Organic light-emitting display apparatus
A display apparatus includes an array of pixels and dummy pixels. A plurality of first lines are connected to the pixels and the dummy pixels. A plurality of...
US-9,349,775 Light-emitting element and display device
There has been a problem that difference in refractive index between an opposite substrate or a moisture barrier layer provided thereover, and air is maintained...
US-9,349,774 Organic light emitting diode display device and method of fabricating the same
An organic light emitting diode display device includes a substrate including a display and non-display regions at a periphery of the display region with red,...
US-9,349,773 Memory devices using a plurality of diodes as program selectors for memory cells
At least one junction diode fabricated in standard CMOS logic processes can be used as program selectors for the memory cells that can be programmed based on...
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