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Inverted metamorphic multijunction solar cell with metamorphic layers
A multijunction solar cell having at least four solar subcells includes a first solar subcell having a first band gap. A first graded interlayer adjacent to the...
Photovoltaic module, method for electrically connecting a plurality of
photovoltaic cells, and device for...
In various embodiments, a photovoltaic module may include: a plurality of photovoltaic cells, at least one photovoltaic cell of the number of photovoltaic cells...
Roofing flashings and roofing systems and photovoltaic roofing systems
using the same
The present invention relates more particularly to improved flashings for use in integrating specialized roof-mounted structures, such as photovoltaic devices...
Dynamically reconfigurable photovoltaic system
A PV system composed of sub-arrays, each having a group of PV cells that are electrically connected to each other. A power management circuit for each sub-array...
Solar cell and method for manufacturing same
Disclosed is a solar cell including a support substrate, a barrier layer on the support substrate, and a photo-electro conversion part on the barrier layer. The...
Method of forming single-crystal semiconductor layers and photovaltaic
A method for forming single crystal or large-crystal-grain thin-film layers deposits a thin-film amorphous, nanocrystalline, microcrystalline, or...
THz distributed detectors and arrays
Terahertz (THz) distributed detectors, and arrays of detectors that utilize structured surface plasmonic effects for more efficient coupling to free space are...
Apparatus, system and method of back side illumination (BSI) complementary
Some demonstrative embodiments include devices and/or methods of Back Side Illumination (BSI) Complementary Metal-Oxide-Semiconductor (CMOS) pixel array. For...
Method of manufacturing CI(G)S nano particles for manufacturing light
absorption layer and CI(G)S nano...
Disclosed are a method of preparing CI(G)S nano particles forming a light absorption layer of solar cells, including dissolving at least one Group VI source...
Semiconductor ultraviolet (UV) photo-detecting device
An ultraviolet (UV) photo-detecting device, including: a first nitride layer; a secondary light absorption layer disposed on the first nitride layer; a primary...
Cooled optical light guide for low-level light detectors and method of
temperature stabilization for imaging...
A cooled optical light guide is provided having a conduit having a translucent top and a translucent bottom wherein at least a portion of the translucent top of...
Semiconductor device and method for manufacturing the same
A semiconductor device includes a substrate and a first insulating layer. The first insulating layer includes a first lower layer and a first upper layer on the...
Integrated photodetector waveguide structure with alignment tolerance
An encapsulated integrated photodetector waveguide structures with alignment tolerance and methods of manufacture are disclosed. The method includes forming a...
Structure and method of integrating waveguides, photodetectors and logic
A method for monolithically integrating semiconductor waveguides, photodetectors and logic devices, i.e., field effect transistors, on a same substrate is...
High efficiency group III-V compound semiconductor solar cell with
oxidized window layer
The present application utilizes an oxidation process to fabricating a Group III-V compound semiconductor solar cell device. By the oxidation process, a window...
Semiconductor device and method of manufacturing semiconductor device
A semiconductor device includes: a photoelectric conversion section made of semiconductor; a color filter made of an inorganic material to which a metal ion is...
Flat panel sensor and flat panel detector
A flat panel sensor and a flat panel detector are provided on the basis of a top-gate TFT structure. The flat panel sensor comprises a base substrate, and a...
Three-dimensional semiconductor memory devices
Three-dimensional (3D) nonvolatile memory devices include a substrate having a well region of second conductivity type (e.g., P-type) therein and a common...
Electronic device including a tunnel structure
An electronic device can include a tunnel structure that includes a first electrode, a second electrode, and tunnel dielectric layer disposed between the...
Semiconductor devices comprising floating gate transistors and methods of
forming such semiconductor devices
Semiconductor devices include one or more transistors having a floating gate and a control gate. In at least one embodiment, the floating gate comprises an...
Stable high mobility MOTFT and fabrication at low temperature
A method of fabricating a stable high mobility amorphous MOTFT includes a step of providing a substrate with a gate formed thereon and a gate dielectric layer...
Semiconductor device structures and arrays of vertical transistor devices
A semiconductor device structure is disclosed. The semiconductor device structure includes a mesa extending above a substrate. The mesa has a channel region...
Thin film transistor, display panel having the same and method of
manufacturing the same
A thin film transistor includes a bottom gate electrode, a top gate electrode and an active pattern. The top gate electrode includes a transparent conductive...
Semiconductor device, electronic device, and method of manufacturing
To provide a semiconductor device and a display device which can be manufactured through a simplified process and the manufacturing technique. Another object is...
Fabrication of graphene nanoribbons and nanowires using a meniscus as an
In some embodiments, the present disclosure pertains to methods of preparing graphene nanoribbons from a graphene film associated with a meniscus, where the...
Method for incorporating impurity element in EPI silicon process
The present disclosure provides a method of fabricating a semiconductor device that includes forming a plurality of fins, the fins being isolated from each...
Silicide protection during contact metallization and resulting
A semiconductor transistor has a structure including a semiconductor substrate, a source region, a drain region and a channel region in between the source...
Fin-type semiconductor device and manufacturing method
One embodiment of a semiconductor device includes a fin at a first side of a semiconductor body, a body region of a second conductivity type in at least a part...
FinFET spacer etch for eSiGe improvement
A method for etching FinFET spacers by inserting a Si recess step directly after the traditional spacer ME step and the resulting device are provided....
Semiconductor device with recess, epitaxial source/drain region and
A semiconductor device including a gate electrode disposed on a semiconductor substrate and source/drain regions disposed at both sides of the gate electrode,...
Electronic device with asymmetric gate strain
The use of strained gate electrodes in integrated circuits results in a transistor having improved carrier mobility, improved drive characteristics, and reduced...
Remote gate protection diode for field effect transistors
The present disclosure relates to gate oxide protection circuits, which are used to protect the gate oxides of field effect transistor (FET) elements from over...
Semiconductor device and manufacturing method thereof
A semiconductor device includes: an n-type first source region and first drain region formed in a surface of a p-type epitaxial layer; an n-type first source...
Pattern layout to prevent split gate flash memory cell failure
A semiconductor structure of a split gate flash memory cell is provided. The semiconductor structure includes a semiconductor substrate including a first...
Semiconductor device having peripheral trench structures
The disclosure relates to a semiconductor device including a semiconductor body, having a first surface, a gate electrode structure, which includes...
A device comprises a substrate, an n-layer and a p-layer, an n-electrode, and a p-electrode. A step is formed at an outer circumference of the device. A...
Power MOSFETs and methods for forming the same
Power Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) and methods of forming the same are provided. A power MOSFET may comprise a first drift...
There is provided a semiconductor device having LDMOS transistors embedded in a semiconductor substrate to boost source-drain breakdown voltage, with...
Power MOS device structure
Various embodiments of a power MOS device structure are disclosed. In one aspect, a power MOS device structure includes a plurality of LDMOS and a plurality of...
Engineered source/drain region for n-Type MOSFET
Integrated circuit devices with field effect transistors have source and drain regions that include a first and a second layer. The first layer is formed below...
Semiconductor device and method of manufacturing the same
To provide a semiconductor device capable of suppressing a reduction in breakdown voltage by suppressing a change in dimensions of a double RESURF structure,...
Charged balanced devices with shielded gate trench
This invention discloses a semiconductor power device disposed on a semiconductor substrate includes a plurality of deep trenches with an epitaxial layer...
Medium voltage MOSFET device
A semiconductor device includes a medium voltage MOSFET having a vertical drain drift region between RESURF trenches containing field plates which are...
Integrating Schottky diode into power MOSFET
A semiconductor device includes a plurality of trenches including active gate trenches in an active area and gate runner/termination trenches and shield...
Metal-gate MOS transistor and method of forming the transistor with
reduced gate-to-source and gate-to-drain...
The gate-to-source and gate-to-drain overlap capacitance of a MOS transistor with a metal gate and a high-k gate dielectric are reduced by forming the high-k...
HEMT with compensation structure
A high electron mobility transistor includes a source, a gate and a drain, a first III-V semiconductor region, and a second III-V semiconductor region below the...
Tunnel junction field effect transistors having self-aligned source and
gate electrodes and methods of forming...
Methods of forming a transistor include providing a semiconductor epitaxial structure including a channel layer and barrier layer on the channel layer, forming...
Semiconductor power device
A semiconductor power device, comprising: a substrate; a first semiconductor layer with a first lattice constant formed on the substrate; a first grading layer...
Layout structure of heterojunction bipolar transistors
A layout structure of HBTs comprising one or more HBTs, each of which comprises a base electrode, an emitter electrode, and a collector electrode. A passive...
Manufacturing method of semiconductor structure
A manufacturing method of a semiconductor structure includes the following steps. A high-k dielectric layer is formed on a semiconductor substrate, and a...