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Patent # Description
US-9,355,872 Substrate treatment apparatus and substrate treatment method
A substrate treatment apparatus includes: a substrate holding unit which horizontally holds a substrate; a liquid droplet nozzle which generates droplets of a...
US-9,355,871 Substrate liquid processing apparatus for separating processing solution and atmosphere from each other within...
A substrate liquid processing apparatus is provided, in which a processing solution and an atmosphere can be separated from each other within a collection cup....
US-9,355,870 Integrated circuit with sensor area and resin dam
A technique for forming an integrated circuit die that contains an integrated sensor is provided. The integrated circuit die may be configured such that the...
US-9,355,869 Method of manufacturing semiconductor device
In a semiconductor device formed by mounting a chip laminate including a semiconductor chip having a small diameter and a semiconductor chip having a large...
US-9,355,868 Method of manufacturing semiconductor device
A method of manufacturing a semiconductor device includes the steps of placing, on a heat sink made of a metal, a semiconductor element and a frame surrounding...
US-9,355,867 Process for the production of solar cells having a local back surface field (LBSF)
The present invention relates to a method for producing solar cells with local back surface field (LBSF) using an alkaline etching paste which allows the back...
US-9,355,866 Substrate processing apparatus, method of manufacturing semiconductor device and non-transitory...
Provided is a configuration capable of suppressing a variation in characteristics of transistor. The configuration includes: a process chamber; a gas supply...
US-9,355,865 Semiconductor patterning
One or more techniques or systems for forming a pattern during semiconductor fabrication are provided herein. In some embodiments, a photo resist (PR) region is...
US-9,355,864 Method for increasing adhesion of copper to polymeric surfaces
Techniques disclosed herein a method and system for conditioning a polymeric layer on a substrate to enable adhesion of a metal layer to the polymeric layer....
US-9,355,863 Non-local plasma oxide etch
A method of etching exposed titanium oxide on heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing...
US-9,355,862 Fluorine-based hardmask removal
A method of removing titanium nitride hardmask is described. The hardmask resides above a low-k dielectric layer prior to removal and the low-k dielectric layer...
US-9,355,861 Semiconductor device manufacturing method and computer-readable storage medium
A semiconductor device manufacturing method for etching a substrate having a multilayer film formed by alternately stacking a first film and a second film, and...
US-9,355,860 Method for achieving uniform etch depth using ion implantation and a timed etch
A method of performing a timed etch of a material to a precise depth is provided. In this method, ion implantation of the material is performed before the timed...
US-9,355,859 Stacked chips with through electrodes
A semiconductor device according to the present invention includes: a combination object; and a chip having a front surface opposed to a front surface of the...
US-9,355,858 Method of manufacturing semiconductor device
Some embodiments of the present invention relate to a semiconductor device and a method of manufacturing a semiconductor device capable of preventing the...
US-9,355,857 Substrate manufacturing method and substrate manufacturing apparatus
Provided are a substrate manufacturing method and a substrate manufacturing apparatus used therefor. The substrate manufacturing method includes providing a...
US-9,355,856 V trench dry etch
Methods of producing V-shaped trenches in crystalline substrates are described. The methods involve processing a patterned substrate with etch masking materials...
US-9,355,855 Plasma etching apparatus component and manufacturing method for the same
The present invention provides a plasma etching apparatus component 1 includes a base material 10 and an yttrium oxide coating 20 formed by an impact sintering...
US-9,355,854 Methods of fabricating printable compound semiconductor devices on release layers
A method of fabricating transferable semiconductor devices includes providing a release layer including indium aluminum phosphide on a substrate, and providing...
US-9,355,853 Systems and methods for bidirectional device fabrication
Methods and systems for double-sided semiconductor device fabrication. Devices having multiple leads on each surface can be fabricated using a ...
US-9,355,852 Method for manufacturing semiconductor device
A method for manufacturing a semiconductor device includes: preparing a Si substrate having a flat portion with flat front and back surfaces and a bevel portion...
US-9,355,851 Semiconductor devices and methods of manufacturing the same
A semiconductor device includes a metal pattern filling a trench formed through at least a portion of an insulating interlayer on a substrate and including...
US-9,355,850 Method of manufacturing semiconductor device, method of processing substrate, substrate processing apparatus...
A method of manufacturing a semiconductor device, includes: alternately performing (i) a first step of alternately supplying a first raw material containing a...
US-9,355,849 Oxide-nitride-oxide stack having multiple oxynitride layers
A semiconductor device including an oxide-nitride-oxide (ONO) structure having a multi-layer charge storing layer and methods of forming the same are provided....
US-9,355,848 Semiconductor structure and method for forming the same
A semiconductor structure and a method for forming the same are provided. The method includes following steps. A gate electrode layer is formed on a substrate....
US-9,355,847 High-energy ion implanter
A high-energy ion implanter includes: a beam generation unit that includes an ion source and a mass spectrometer; a radio frequency multi-stage linear...
US-9,355,846 Non-uniform silicon dioxide and air gap for separating memory cells
According to one embodiment, a method for forming a semiconductor device includes: forming a first underlayer film that contains a first chemical element...
US-9,355,845 Light induced nanowire assembly
The invention provides a method for assembling semiconducting nanowires, which method can include providing a mixture comprising a dielectric solvent and two or...
US-9,355,844 Method for manufacturing semiconductor device
Electrical characteristics of transistors using an oxide semiconductor are greatly varied in a substrate, between substrates, and between lots, and the...
US-9,355,843 Semiconductor device and method of manufacturing the same
A method of manufacturing a semiconductor device according to one aspect of the present invention includes a step of forming a first layer of InAlN, a step of...
US-9,355,842 Direct and sequential formation of monolayers of boron nitride and graphene on substrates
The invention generally related to a method for preparing a layer of graphene directly on the surface of a substrate, such as a semiconductor substrate. The...
US-9,355,841 Manufacturing method of high electron mobility transistor
A manufacturing method of a high electron mobility transistor includes: forming a GaN channel layer on a semi-insulating substrate in a first growth condition;...
US-9,355,840 High quality devices growth on pixelated patterned templates
A method of producing a template material for growing semiconductor materials and/or devices, comprises the steps of: (a) providing a substrate with a...
US-9,355,839 Sub-saturated atomic layer deposition and conformal film deposition
Methods and apparatus for depositing continuous thin films using plasma-activated sub-saturated atomic layer deposition are provided herein. According to...
US-9,355,838 Oxide TFT and manufacturing method thereof
Embodiments of the invention provide an oxide TFT and a manufacturing method thereof. The oxide thin film transistor comprises: a substrate; a gate electrode...
US-9,355,837 Methods of forming and using materials containing silicon and nitrogen
Some embodiments include methods utilizing atomic layer deposition to form material containing silicon and nitrogen (e.g., silicon nitride). The atomic layer...
US-9,355,836 Method and apparatus for liquid treatment of wafer shaped articles
In an apparatus and method for treating a wafer-shaped article, a spin chuck is provided for holding and rotating a wafer-shaped article. A first liquid...
US-9,355,835 Method and apparatus for processing substrate
Provided are a substrate processing apparatus and method. The substrate processing apparatus includes a substrate support member on which a substrate is placed...
US-9,355,834 Adhesive transfer
An adhesive transfer method includes depositing an adhesive on a first substrate, transferring a layer of the adhesive from the first substrate to an...
US-9,355,833 Excimer lamp
Provided is an excimer lamp having a simple and small structure, which can be used in, for example, a refrigerator, and can emit ultraviolet light at a...
US-9,355,832 Reflectrons and methods of producing and using them
Certain embodiments described herein are directed to reflectron assemblies and methods of producing them. In some configurations, a reflectron comprising a...
US-9,355,831 Ion guide or filters with selected gas conductance
Certain embodiments described herein are directed to rod assemblies such as, for example, quadrupole, hexapole and octupole rod assemblies. In some instances,...
US-9,355,830 Introduction of ions into ion cyclotron resonance cells
The invention relates to a method and a device for introducing ions into an ICR cell of Fourier transform ion cyclotron resonance mass spectrometers, in...
US-9,355,829 Sample plate for MALDI-TOF mass spectrometer and method of manufacturing the sample plate and mass spectrometry...
The present invention relates to a sample plate to be used for a MALDI-TOF (Matrix Assisted Laser Desorption Ionization Time of Flight) mass spectrometer, and...
US-9,355,828 Recording spatial and temporal properties of ions emitted from a quadrupole mass filter
An ion detection system for a detecting a quantity of ions exiting from a mass analyzer of a mass spectrometer comprises: (a) photon generating means configured...
US-9,355,827 Triple quadrupole mass spectrometer and non-transitory computer-readable medium recording a program for triple...
A triple quadrupole mass spectrometer provided with: a calibration information storage section for storing mass calibration information showing the relationship...
US-9,355,826 Method for imaging mass analysis using physical vapor deposition of platinum nanoparticles
The present invention provides an improved method for imaging mass spectrometry using an ionization-assisting matrix of a test sample, wherein the ionization...
US-9,355,825 Ionization vacuum gauge
An ionization vacuum gauge includes a cathode, an anode and an ion collector. The ion collector component is located at one side of the anode component and...
US-9,355,824 Arc suppression and pulsing in high power impulse magnetron sputtering (HIPIMS)
An apparatus for generating sputtering of a target to produce a coating on a substrate is provided. The apparatus comprises a magnetron including a cathode and...
US-9,355,823 Methods for removing particles from etching chamber
A method includes forming a coating layer in a dry etching chamber, placing a wafer into the dry etching chamber, etching a metal-containing layer of the wafer,...
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