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Patent # Description
US-9,362,372 Semiconductor device with a step gate dielectric structure
A semiconductor device and a method for forming the same are disclosed. The semiconductor device includes an isolation structure formed in a substrate to define...
US-9,362,371 Method for producing a controllable semiconductor component having a plurality of trenches
A method of producing a controllable semiconductor component includes providing a semiconductor body with a top side and a bottom side, and forming a first...
US-9,362,370 Silicon carbide semiconductor device having nitrogen-containing silicon alloy for ohmic contact to P-type...
A semiconductor device includes: a first silicon carbide semiconductor layer; a p-type first impurity region provided in the first silicon carbide semiconductor...
US-9,362,369 Group III-N transistors on nanoscale template structures
A III-N semiconductor channel is formed on a III-N transition layer formed on a (111) or (110) surface of a silicon template structure, such as a fin sidewall....
US-9,362,368 Substrate with silicon carbide film, method for producing substrate with silicon carbide film, and...
A substrate with a silicon carbide film includes a Si substrate, and a SiC film and a mask stacked on the Si substrate. The SiC film has a first SiC film...
US-9,362,367 Semiconductor devices including polar insulation layer capped by non-polar insulation layer
Illustrative embodiments of semiconductor devices including a polar insulation layer capped by a non-polar insulation layer, and methods of fabrication of such...
US-9,362,366 Semiconductor element, semiconductor element manufacturing method, semiconductor module, semiconductor module...
An ohmic electrode layer is disposed on a second main surface of a silicon carbide substrate, and a metal electrode layer is disposed on the ohmic electrode...
US-9,362,365 Graphite and/or graphene semiconductor devices
Various embodiments are provided for graphite and/or graphene based semiconductor devices. In one embodiment, a semiconductor device includes a semiconductor...
US-9,362,364 Transfer-free batch fabrication of single layer graphene devices
A method of manufacturing one or more graphene devices is disclosed. A thin film growth substrate is formed directly on a device substrate. Graphene is formed...
US-9,362,363 Power integrated devices, electronic devices and electronic systems including the same
A power integrated device includes a drift region disposed in a substrate, a source region disposed in the substrate spaced apart from the drift region, a drain...
US-9,362,362 FinFET with dielectric isolated channel
Embodiments of the present invention provide a fin type field effect transistor (FinFET) and methods of fabrication. A punchthrough stopper region is formed on...
US-9,362,361 Methods of forming elastically relaxed SiGe virtual substrates on bulk silicon
One illustrative method disclosed herein includes, among other things, forming a composite fin structure comprised of a sacrificial silicon material and a first...
US-9,362,360 Modulating germanium percentage in MOS devices
An integrated circuit structure includes a gate stack over a semiconductor substrate, and an opening extending into the semiconductor substrate, wherein the...
US-9,362,359 Semiconductor device
A semiconductor device in an embodiment includes a first region of a second conductivity type between a first electrode and a second electrode and a second...
US-9,362,358 Spatial semiconductor structure
A method of fabricating a spatial semiconductor structure includes steps as follows. Firstly, a semiconductor substrate is provided. Then, a first mask layer is...
US-9,362,357 Blanket EPI super steep retrograde well formation without Si recess
A method of forming SSRW FETs with controlled step height between a field oxide and epitaxially grown silicon and the resulting devices are provided....
US-9,362,356 Transistor
A transistor is provided in which an elongate drain region has end portions formed in parts of the transistor where features of the transistor structure have...
US-9,362,355 Nanosheet MOSFET with full-height air-gap spacer
A semiconductor device includes a gate positioned on a substrate; a nanosheet that extends through the gate, protrudes from a sidewall of the gate, and forms a...
US-9,362,354 Tuning gate lengths in semiconductor device structures
A method for tuning gate lengths in nanowire semiconductor device structures. The present invention tunes the gate length by having the suspension height of the...
US-9,362,353 Semiconductor device
A semiconductor device includes first and second fin-shaped silicon layers on a substrate, each corresponding to the dimensions of a sidewall pattern around a...
US-9,362,352 Semiconductor device and manufacturing method
A semiconductor device includes a first-conductivity-type semiconductor layer including an active region in which a transistor having impurity regions is formed...
US-9,362,351 Field effect transistor, termination structure and associated method for manufacturing
A field effect transistor ("FET"), a termination structure and associated method for manufacturing. The FET has a plurality of active transistor cells and a...
US-9,362,350 MOS P-N junction diode with enhanced response speed and manufacturing method thereof
A MOS P-N junction diode includes a semiconductor substrate, a mask layer, a guard ring, a gate oxide layer, a polysilicon structure, a polysilicon oxide layer,...
US-9,362,349 Semiconductor device with charge carrier lifetime reduction means
A semiconductor device includes a cell region having at least one device cell, wherein the at least one device cell includes a first device region of a first...
US-9,362,348 Method of manufacturing a light emitting, power generating or other electronic apparatus
An exemplary printable composition of a liquid or gel suspension of diodes comprises a plurality of diodes, a first solvent and/or a viscosity modifier. An...
US-9,362,347 Organic light-emitting diode (OLED) display
An organic light-emitting diode (OLED) display is disclosed. In one aspect, the OLED display includes a plurality of pixels. Each of the pixels includes a first...
US-9,362,346 Organic light emitting display device including a plurality of power lines
Disclosed is an organic light emitting display device that includes a first substrate; at least one pixel formed on the first substrate; a first power line...
US-9,362,345 Organic light emitting display apparatus and method of manufacturing the same
An organic light emitting display apparatus and a method of manufacturing the same are disclosed. The organic light emitting display apparatus includes, for...
US-9,362,343 Iridium-containing active-matrix EL display module
There is provided a light emitting device which enables a color display with good color balance. A triplet compound is used for a light emitting layer of an EL...
US-9,362,342 Light-emitting element display device
A light-emitting element display device includes: a thin film transistor substrate including transistors respectively controlling the amounts of light emission...
US-9,362,341 X ray detection apparatus
There is set forth herein a method for making an apparatus for use in X ray detection comprising fabricating a first layered assembly 10 comprising a...
US-9,362,340 Memory devices having low permittivity layers and methods of fabricating the same
A memory device is provided. The memory device includes bit lines that extend in a first direction on a substrate, word lines configured to vertically cross the...
US-9,362,339 Semiconductor elements stacked and bonded with an anisotropic conductive adhesive
The invention provides a semiconductor device which is non-volatile, easily manufactured, and can be additionally written. A semiconductor device of the...
US-9,362,338 Vertical thin film transistors in non-volatile storage systems
Three-dimensional (3D) non-volatile memory arrays having a vertically-oriented thin film transistor (TFT) select device and method of fabricating are described....
US-9,362,337 Non-volatile storage unit and non-volatile storage device
A non-volatile storage device adopt memristors to store data and uses fewer transistors to realize the same circuit function, whereby to decrease the chip area...
US-9,362,336 Sub-lithographic patterning of magnetic tunneling junction devices
A method for fabricating a magnetic tunnel junction (MTJ) device includes creating a recess within a second patterning layer, in which a first patterning layer...
US-9,362,335 Display device and method for producing a display device
A display device with a semiconductor layer sequence includes an active region provided for generating radiation and a plurality of pixels. The display device...
US-9,362,334 Double-sided display apparatus and method of manufacturing the same
A double-sided display apparatus and a method of manufacturing the same are provided. The double-sided display apparatus includes a first substrate and a second...
US-9,362,333 Semiconductor packages and display devices including semiconductor packages
Semiconductor packages are provided. A semiconductor package may include a semiconductor chip. The semiconductor package may include a substrate and first and...
US-9,362,332 Method for semiconductor selective etching and BSI image sensor
A method of selectively etching a semiconductor device and manufacturing a BSI image sensor device includes etching a doped silicon substrate with an HNA...
US-9,362,331 Method and system for image sensor and lens on a silicon back plane wafer
A method for forming image sensors includes providing a substrate and forming a plurality of photo diode regions, each of the photo diode regions being...
US-9,362,330 Methods for forming backside illuminated image sensors with front side metal redistribution layers and a...
Methods for forming backside illuminated (BSI) image sensors having metal redistribution layers (RDL) and solder bumps for high performance connection to...
US-9,362,329 Pad structure exposed in an opening through multiple dielectric layers in BSI image sensor chips
An integrated circuit structure includes a semiconductor substrate, and a dielectric pad extending from a bottom surface of the semiconductor substrate up into...
US-9,362,328 Semiconductor device and imaging apparatus
The invention relates to a semiconductor device having a vertical transistor bipolar structure of emitter, base, and collector formed in this order from a...
US-9,362,327 Image sensor and electronic device including the same
An image sensor includes a semiconductor substrate integrated with at least one first photo-sensing device configured to sense light in a blue wavelength region...
US-9,362,326 Image capturing apparatus and control method therefor
An image capturing apparatus having pixels is provided. Each pixel includes a photoelectric conversion unit including a charge accumulation region, an output...
US-9,362,325 Semiconductor device and electronic appliance
The present technique relates to a semiconductor device and an electronic appliance in which the reliability of the fine transistor can be maintained while the...
US-9,362,324 Photodetector focal plane array systems and methods
A photodetector focal plane array system, comprising: a substrate comprising a plurality of photosensitive regions; and a microcomponent disposed adjacent to...
US-9,362,323 Solid-state image sensor
An image sensor includes first to fourth microlenses. A first height difference between a first valley between the first and second microlenses and tops of the...
US-9,362,322 Light-sensing apparatus, method of driving the light-sensing apparatus, and optical touch screen apparatus...
In one embodiment, a light-sensing apparatus includes a light-sensing pixel array that has a plurality of light-sensing pixels arranged in rows and columns; and...
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