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Patent # Description
US-9,368,369 Methods for forming a self-aligned contact via selective lateral etch
In some embodiments methods of processing a substrate include: providing a substrate having a contact structure formed on the substrate, wherein the contact...
US-9,368,368 Method for increasing oxide etch selectivity
Techniques herein include methods for etching an oxide layer with greater selectivity to underlying channel materials. Such an increase in etch selectivity...
US-9,368,367 Chemical mechanical polishing of silicon carbide comprising surfaces
Slurry compositions and chemically activated CMP methods for polishing a substrate having a silicon carbide surface using such slurries. In such methods, the...
US-9,368,366 Methods for providing spaced lithography features on a substrate by self-assembly of block copolymers
A method of forming a plurality of regularly spaced lithography features, the method including providing a self-assemblable block copolymer having first and...
US-9,368,365 Method for forming a semiconductor structure
A manufacturing method for forming a semiconductor structure includes: first, a plurality of fin structures are formed on a substrate and arranged along a first...
US-9,368,364 Silicon etch process with tunable selectivity to SiO.sub.2 and other materials
A tunable plasma etch process includes generating a plasma in a controlled flow of a source gas including NH.sub.3 and NF.sub.3 to form a stream of plasma...
US-9,368,363 Etching gas and etching method
The present invention is a plasma etching gas comprising a fluorocarbon having 3 or 4 carbon atoms, the fluorocarbon including at least one unsaturated bond...
US-9,368,362 Semiconductor devices including a capping layer and methods of forming semiconductor devices including a...
Methods of forming a semiconductor device are provided. A method of forming a semiconductor device may include forming a capping layer on a metal pattern and on...
US-9,368,361 Method of making a semiconductor device
In one embodiment, a method for forming an electronic device includes providing a substrate having a plurality of electronic devices formed therein, forming a...
US-9,368,360 Anti-diffusion layer, preparation method thereof, thin-film transistor (TFT), array substrate, display device
An anti-diffusion layer, a preparation method thereof, a thin-film transistor (TFT), an array substrate and a display device are provided, involve the display...
US-9,368,359 Method of manufacturing compound semiconductor device
A compound semiconductor device includes: a compound semiconductor layer; a protective insulating film that covers a top of the compound semiconductor layer;...
US-9,368,358 Method of manufacturing a semiconductor device
A method of manufacturing a semiconductor device includes: (a) supplying a halogen-based source gas containing a first element to a substrate; (b) supplying a...
US-9,368,357 Directional pre-clean in silicide and contact formation
A method includes etching a dielectric layer to form an opening, with an underlying region underlying the dielectric layer exposed to the opening, and...
US-9,368,356 Method for fabricating electronic devices having semiconductor memory unit
Devices and methods based on disclosed technology include, among others, an electronic device including silicide layers capable of effectively reducing contact...
US-9,368,355 System and method for mitigating oxide growth in a gate dielectric
Oxide growth of a gate dielectric layer that occurs between processes used in the fabrication of a gate dielectric structure can be reduced. The reduction in...
US-9,368,354 Semiconductor device and method of manufacturing the same
To improve the reliability of a semiconductor device. In particular, the reading of incorrect information from a memory cell is suppressed. A first...
US-9,368,353 Multiple-threshold voltage devices and method of forming same
A method comprises growing a channel layer comprising a first channel region and a second channel region, depositing a first hard mask layer over the channel...
US-9,368,352 Methods for forming doped silicon oxide thin films
The present disclosure relates to the deposition of dopant films, such as doped silicon oxide films, by atomic layer deposition processes. In some embodiments,...
US-9,368,351 Semiconductor device and method for manufacturing same
[Problem] To provide an SiC semiconductor device, with which stabilization of high-temperature operation can be achieved by decreasing mobile ions in a gate...
US-9,368,350 Tone inverted directed self-assembly (DSA) fin patterning
A method for DSA fin patterning includes forming a BCP layer over a lithographic stack, the BCP layer having first and second blocks, the lithographic stack...
US-9,368,349 Cut last self-aligned litho-etch patterning
The present disclosure relates to a method of performing a self-aligned litho-etch (SALE) process. In some embodiments, the method is performed by forming a...
US-9,368,348 Self-aligned patterning process
Embodiments of the present disclosure are a method of forming a semiconductor device and methods of patterning a semiconductor device. An embodiment is a method...
US-9,368,347 Apparatus and method for irradiating
A method irradiates a wafer and an apparatus provides for a wafer to be irradiated. A plurality of radiation emitters emit radiation. A mask permits a portion...
US-9,368,346 Method of fabricating zinc oxide nanostructures using liquid masking layer
A method of preparing zinc oxide nanostructures using a liquid masking layer is disclosed. The method includes preparing a substrate having a zinc oxide seed...
US-9,368,345 Method of manufacturing silicon carbide semiconductor substrate and method of manufacturing silicon carbide...
A step of preparing a silicon carbide substrate, a step of forming a first silicon carbide semiconductor layer on the silicon carbide substrate using a first...
US-9,368,344 Semiconductor structures, devices and engineered substrates including layers of semiconductor material having...
Methods of fabricating semiconductor devices or structures include forming structures of a semiconductor material overlying a layer of a compliant material,...
US-9,368,343 Reduced external resistance finFET device
The present invention relates generally to semiconductor devices, and more particularly, to a structure and method of reducing external resistance within fin...
US-9,368,342 Defect-free relaxed covering layer on semiconductor substrate with lattice mismatch
A defect-free, relaxed semiconductor covering layer (e.g., epitaxial SiGe) over a semiconductor substrate (e.g., Si) is provided having a strain relaxation...
US-9,368,341 Method of manufacturing a silicon oxide film
A method of manufacturing a silicon oxide film by using a film deposition apparatus is provided. The apparatus includes a turntable including a substrate...
US-9,368,340 Metallization of the wafer edge for optimized electroplating performance on resistive substrates
A method for electroplating a substrate is provided, including: providing a substrate having a conductive layer disposed on a top surface of the substrate, the...
US-9,368,339 Discharge lamp with high color temperature
A discharge lamp comprises a discharge vessel 20 defining a sealed inner discharge space 22 with two electrodes 24. A filling consists of a rare gas and a metal...
US-9,368,338 Gas discharge lamp with an axially extending strip of getter and method of manufacture
A gas discharge lamp, photoionization sensor employing the gas discharge lamp, and method of manufacturing the lamp. The lamp includes a longitudinally...
US-9,368,337 Light source with laser pumping and method for generating radiation
The invention relates to light sources with laser pumping and to methods for generating radiation with a high luminance in the ultraviolet (UV) and visible...
US-9,368,336 Ion trap-based apparatus and method for analyzing and detecting bipolar ions
An ion trap-based device and method for analyzing and detecting bipolar ions is provided. The device includes multiple electrodes of an ion trap; a radio...
US-9,368,335 Mass spectrometer
A mass spectrometer system can include a vacuum manifold and a high vacuum pump. The vacuum manifold can include a foreline chamber and a high vacuum chamber....
US-9,368,334 Collision cells and methods of using them
Certain embodiments described herein are directed to collision cells that comprise one or more integrated lenses. In some examples, a lens is coupled to two...
US-9,368,333 Ion mobility spectrometer and method of operating same
In a drift tube partitioned into a plurality of cascaded drift tube segments each followed by an ion elimination region, a method of separating ions as a...
US-9,368,332 Microchannel plate devices with tunable resistive films
A microchannel plate includes a substrate defining a plurality of channels extending from a top surface of the substrate to a bottom surface of the substrate. A...
US-9,368,331 Sputtering apparatus
The present invention provides a highly efficient magnetron sputtering apparatus in which a ground shield made of a magnetic material is disposed on the outer...
US-9,368,330 Sputtering targets and methods
Multi-component sputtering target structures suitable for deposition of metallic alloy films are provided. The multi-component target may be formed by winding...
US-9,368,329 Methods and apparatus for synchronizing RF pulses in a plasma processing system
A synchronized pulsing arrangement for providing at least two synchronized pulsing RF signals to a plasma processing chamber of a plasma processing system is...
US-9,368,328 Apparatus for generating and maintaining plasma for plasma processing
An apparatus for generating and maintaining plasma for plasma processing using inductively coupled RF power. The apparatus includes a resonant circuit having a...
US-9,368,327 High-energy ion implanter
A high-energy ion implanter includes: a beam generation unit that includes an ion source and a mass analyzer; a high-energy multi-stage linear acceleration unit...
US-9,368,326 Scan head and scan arm using the same
A scan head assembled to a scan arm for an ion implanter and a scan arm using the same are provided, wherein the scan head comprises a case, a shaft assembly,...
US-9,368,325 TEM sample preparation
A method and apparatus for altering the orientation of a charged particle beam sample is presented. Embodiments of the method includes providing a first work...
US-9,368,324 Measurement and inspection device
The present invention relates to a measurement and inspection device of a scanning-type electron beam system, and provides a technique for achieving a...
US-9,368,323 Charged particle beam device, control method for charged particle beam device, and cross-section processing...
A cross-section processing observation apparatus includes an ion beam control unit which controls a charged particle beam generation-focusing portion and a...
US-9,368,322 Inspection apparatus
An inspection apparatus includes beam generation means, a primary optical system, a secondary optical system and an image processing system. Irradiation energy...
US-9,368,321 Fiducial-based correlative microscopy
A method is provided for preparing a sample for correlative optical and electron imaging and correcting aberrations in the imaging process due to sample...
US-9,368,320 Stage apparatus, and charged particle beam apparatus using same
The purpose of the present invention is to provide a stage apparatus that effectively suppresses the transmission of heat generated by a drive mechanism to a...
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