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Patent # Description
US-9,373,524 Die level chemical mechanical polishing
A method of polishing a wafer at the die level with a targeted slurry delivery system. The wafer is placed on a wafer carrier exposing the top side of the...
US-9,373,523 Semiconductor device manufacturing method
A semiconductor device manufacturing method includes performing reactive ion etching of the film containing a metal disposed on the bottom of the first groove...
US-9,373,522 Titanium nitride removal
A method of removing titanium nitride hardmask is described. The hardmask resides above a low-k dielectric layer prior to removal and the low-k dielectric layer...
US-9,373,521 Etching processing method
An etching processing method for etching a substrate formed with a target film and a mask film is performed in a substrate processing apparatus including a...
US-9,373,520 Multilayer film etching method and plasma processing apparatus
In one embodiment of the present invention, there is provided a method for etching a multilayer film formed by laminating a plurality of alternating layers of a...
US-9,373,519 Method to pattern substrates
A method for creating a pattern on a substrate (101) is presented, the method comprises: providing a substrate (101) comprising silicon; creating a sacrificial...
US-9,373,518 Method and apparatus for preventing native oxide regrowth
A method for combinatorially processing a substrate is provided. The method includes introducing a first etchant into a reactor cell and introducing a fluid...
US-9,373,517 Semiconductor processing with DC assisted RF power for improved control
Semiconductor processing systems are described including a process chamber. The process chamber may include a lid assembly, grid electrode, conductive insert,...
US-9,373,516 Method and apparatus for forming gate stack on Si, SiGe or Ge channels
Provided are methods and apparatus for functionalizing a substrate surface used as the channel in a gate stack. Silicon, germanium and silicon germanium...
US-9,373,515 Conductive nanowire films
The invention provides a novel conductive film and a multilayered conductive structure, comprising a plurality of metal nanowires arranged in clusters and...
US-9,373,514 Non-volatile FINFET memory array and manufacturing method thereof
An electronic device includes a substrate with a semiconducting surface having a plurality of fin-type projections coextending in a first direction through a...
US-9,373,513 Methods of manufacturing semiconductor devices including variable width floating gates
A semiconductor device includes a substrate including an active region defined by a device isolation pattern and a floating gate on the active region. The...
US-9,373,512 Apparatus and method for laser heating and ion implantation
An apparatus and method for performing ion implantation while minimizing and/or repairing amorphization of the substrate material. The process comprises...
US-9,373,511 Methods for crystallizing a substrate using energy pulses and freeze periods
Apparatus and methods of treating a substrate with an amorphous semiconductor layer, or a semiconductor layer having small crystals, to form large crystals in...
US-9,373,510 Method for manufacturing a semiconductor device
Disclosed is a method for manufacturing a semiconductor device, including: forming a first material layer including holes exposing a part of an ion injection...
US-9,373,509 FINFET doping method with curvilnear trajectory implantation beam path
A method to implant dopants onto fin-type field-effect-transistor (FINFET) fin surfaces with uniform concentration and depth levels of the dopants and the...
US-9,373,508 Semiconductor device and fabricating method thereof
A semiconductor device and a fabricating method thereof are provided. The semiconductor device is formed on a substrate and includes a first first-type...
US-9,373,507 Defective P-N junction for backgated fully depleted silicon on insulator mosfet
Methods for semiconductor fabrication include forming a well in a semiconductor substrate. A pocket is formed within the well, the pocket having an opposite...
US-9,373,506 Method for treating surface of diamond thin film, method for forming transistor, and sensor device
A method for treating a surface of a diamond thin film according to one aspect of the present invention performs one of a first substitution process for...
US-9,373,505 Mark segmentation method and method for manufacturing a semiconductor structure applying the same
In this disclosure, a mark segmentation method and a method for manufacturing a semiconductor structure applying the same are provided. The mark segmentation...
US-9,373,504 Method for forming an epitactic silicon layer
The present invention relates to a method for manufacturing an epitactic silicon layer made up of crystallites with a size no lower than 20 .mu.m, including:...
US-9,373,503 Method of fabricating thin, freestanding, single crystal silicon sheet
A method of forming a free-standing silicon film that includes providing a Si substrate, depositing a layered structure on the Si substrate, where the layered...
US-9,373,502 Structure for III-V devices on silicon
Embodiments described herein relate to a structure for III-V devices on silicon. A Group IV substrate is provided and a III-V structure may be formed thereon....
US-9,373,501 Hydroxyl group termination for nucleation of a dielectric metallic oxide
A surface of a semiconductor-containing dielectric material/oxynitride/nitride is treated with a basic solution in order to provide hydroxyl group termination...
US-9,373,500 Plasma assisted atomic layer deposition titanium oxide for conformal encapsulation and gapfill applications
The embodiments herein relate to methods and apparatus for depositing an encapsulation layer over memory stacks in MRAM and PCRAM applications. The...
US-9,373,499 Batch-type remote plasma processing apparatus
A plasma processing apparatus comprises a processing chamber in which a plurality of substrates are stacked and accommodated; a pair of electrodes extending in...
US-9,373,498 Method of operating vertical heat treatment apparatus, vertical heat treatment apparatus and non-transitory...
A method of operating vertical heat treatment apparatus includes: cleaning interior of vertical reaction chamber by supplying cleaning gas; pre-coating the...
US-9,373,497 Methods for stripping photoresist and/or cleaning metal regions
Methods are provided for cleaning metal regions overlying semiconductor substrates. A method for removing material from a metal region comprises heating the...
US-9,373,496 Substrate recycling method and recycled substrate
Exemplary embodiments of the present invention provide a substrate recycling method and a recycled substrate. The method includes separating a substrate having...
US-9,373,495 Fluorine-containing resin film and solar cell module
Disclosed is a fluorine-containing resin film which is formed from a fluorine-containing resin composition and has a thickness of 10 to 50 .mu.m, wherein the...
US-9,373,494 Sparker for flash lamp
A base assembly for a flash lamp is disclosed. The base assembly has an integrated sparker and includes an electrically conductive header having a surface that...
US-9,373,493 Mass spectrometer and method of adjusting same
A mass spectrometer and method capable of optimizing the opening time of a collision cell includes: an ion source (10) for ionizing a sample; a first mass...
US-9,373,492 Microscale mass spectrometry systems, devices and related methods
Mass spectrometry systems or assemblies therefore include an ionizer that includes at least one planar conductor, a mass analyzer with a planar electrode...
US-9,373,491 Mass spectrometer
An object of the present invention is to provide a mass spectrometer having a simple structure and being capable of precisely measuring a total pressure and...
US-9,373,490 Time-of-flight mass spectrometer
When ions introduced between repeller electrode and extraction electrode are accelerated through flight space, orthogonal acceleration power supply portion...
US-9,373,489 Ion guiding device
An ion guiding device is disclosed comprising a first ion guide which is conjoined with a second ion guide. Ions are urged across a radial pseudo-potential...
US-9,373,487 Mass spectrometer
In a pause time assigned for switching voltage applied to a quadrupole mass filter or other ion transport optical system so as to switch the mass-to-charge...
US-9,373,486 Species detection using mass spectrometry
Systems and methods are provided for species detection using mass spectrometry. In various embodiments, a multiple reaction monitoring (MRM) experiment is...
US-9,373,485 Apparatus and method for improved darkspace gap design in RF sputtering chamber
Improved designs of target assemblies and darkspace shields are disclosed. Methods of improving darkspace gap in sputtering chambers and sputtering chambers...
US-9,373,484 Plasma generator, manufacturing method of rotating electrode for plasma generator, method for performing plasma...
A plasma generator according to an embodiment of the present invention is provided to generate a high density and stable plasma at near atmospheric pressure by...
US-9,373,483 Plasma processing apparatus and high frequency generator
Provided is a plasma processing apparatus that performs a processing on a processing target object using plasma. The plasma processing apparatus includes a...
US-9,373,482 Customizing a particle-beam writer using a convolution kernel
An exposure pattern is computed which is used for exposing a desired pattern on a target in a charged-particle multi-beam processing apparatus so as to match a...
US-9,373,481 High-energy ion implanter, beam collimator, and beam collimation method
A beam collimator includes a plurality of lens units that are arranged along a reference trajectory so that a beam collimated to the reference trajectory comes...
US-9,373,480 Charged particle beam device and filter member
In a SEM device which enables observations under an atmospheric pressure, in the event that a diaphragm is damaged during an observation of a sample, air flows...
US-9,373,479 High-speed multiframe dynamic transmission electron microscope image acquisition system with arbitrary timing
An electron microscope is disclosed which has a laser-driven photocathode and an arbitrary waveform generator (AWG) laser system ("laser"). The laser produces a...
US-9,373,478 Radiation generating apparatus and radiation imaging apparatus
There is provided a radiation generating apparatus having a simple structure and capable of shielding unnecessary radiation, cooling a target, reducing the size...
US-9,373,477 Electron emission device and electron emission display
An electron emission device includes a number of electron emission units spaced from each other, wherein each of the number of electron emission units includes...
US-9,373,476 Electron emission device and electron emission display
An electron emission device includes a number of electron emission units, wherein each of the number of electron emission units includes a first electrode, an...
US-9,373,475 Electron emission source
An electron emission source includes a first electrode, a semiconductor layer, an insulating layer, and a second electrode stacked in that sequence, wherein the...
US-9,373,474 Ion source, and mass spectroscope provided with same
An ion source is provided with a push-out electrode, a pull-out electrode, and a pull-in electrode all for ionizing a sample and accelerating generated ions in...
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