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Patent # Description
US-9,379,280 Contacts for an N-type gallium and nitrogen substrate for optical devices
A method for fabricating LED devices. The method includes providing a gallium and nitrogen containing substrate member (e.g., GaN) comprising a backside surface...
US-9,379,279 Epitaxial film forming method, sputtering apparatus, manufacturing method of semiconductor light-emitting...
The present invention has an object to provide an epitaxial film forming method of epitaxially growing a high-quality group III nitride semiconductor thin film...
US-9,379,278 Photoelectric conversion element, method of manufacturing photoelectric conversion element, and electronic device
A method of manufacturing a photoelectric conversion element includes: forming a first electrode film such that a first conductive film is connected with a...
US-9,379,277 Fabrication method for solar cell assembly
A fabrication method for a solar cell assembly is disclosed. Solar cell sheets, which are connected to each other with connecting sheets, are placed into an...
US-9,379,276 Optical interconnection module and optical-electrical hybrid board
There are provided an optical interconnection module and an optical-electrical hybrid board using the same to process optical and electric signals on a board at...
US-9,379,275 Apparatus and method for reducing dark current in image sensors
A method for reducing dark current in image sensors comprises providing a backside illuminated image sensor wafer, depositing a first passivation layer on a...
US-9,379,274 Solar cell panel and the method for manufacturing the same
According to an aspect of an embodiment of the present disclosure, there is provided a solar cell panel and a method for manufacturing the same. The solar cell...
US-9,379,273 Semiconductor device having a mounting member that includes a die pad unit and terminals with multiple...
A mounting member includes: an insulating substrate, a first die pad unit, first and second terminals. The insulating substrate has a rectangular first surface,...
US-9,379,272 Light receiving element and optically coupled insulating device
A light receiving element includes: a semiconductor layer; an insulating layer; an interconnect layer; and a film. The semiconductor layer includes a light...
US-9,379,271 Variable range photodetector and method thereof
A method of making and a photodetector comprising a substrate; a p-type or n-type layer; first and second region each having polarizations, a first interface...
US-9,379,270 Bifacial crystalline silicon solar panel with reflector
Bifacial crystalline solar cells and associated solar panel systems are provided. The cells include a p-type crystalline silicon layer and a barrier layer. The...
US-9,379,269 Bifacial crystalline silicon solar panel with reflector
Bifacial crystalline solar cells and associated solar panel systems are provided. The cells include a p-type crystalline silicon layer and a barrier layer. The...
US-9,379,268 Solar cell module and method of manufacturing the same
Disclosed is a solar cell module that has a wiring member including a resin film, and a wiring disposed on the resin film and electrically connected to a solar...
US-9,379,267 Solar cell module
A solar cell module including two or more adjacent solar cells (1a, 1b), a connection member (2) for electrically connecting the solar cells (1a, 1b) to each...
US-9,379,266 Solar cell module and method of fabricating the same
Disclosed are a solar cell module and a method of fabricating the same. The solar cell module according to the embodiment includes first solar cells including a...
US-9,379,265 Integrated circuit combination of a target integrated circuit, photovoltaic cells and light sensitive diodes...
An integrated circuit (IC) comprises a plurality of photovoltaic (PV) cells formed over a passivation layer of a target integrated circuit (TIC), wherein at...
US-9,379,264 Multilayered film and photovoltaic module including the same
A multilayered film, a back sheet for a photovoltaic cell, methods of manufacturing the film and cell, and a photovoltaic module including the film and cell are...
US-9,379,263 Durable polyolefin adhesive material for solar modules
This disclosure generally relates to films capable of use in electronic device modules and to electronic device modules including such films. The disclosure...
US-9,379,262 Wafer with high rupture resistance
A wafer with high rupture resistance includes a plurality of surfaces, wherein the surfaces include a largest surface having a largest area than others and a...
US-9,379,261 Ultra thin film nanostructured solar cell
Improved solar cells are provided by nano-structuring the solar cell active region to provide high optical absorption in a thin structure, thereby...
US-9,379,260 Solar cell and method of fabricating the same
Provided is a solar cell including a first electrode, a first semiconductor layer on the first electrode, a second semiconductor layer on the first...
US-9,379,259 Double layered transparent conductive oxide for reduced schottky barrier in photovoltaic devices
A device and method for fabricating a photovoltaic device includes forming a double layer transparent conductive oxide on a transparent substrate. The double...
US-9,379,258 Fabrication methods for monolithically isled back contact back junction solar cells
Fabrication methods for making back contact back junction solar cells. A base dopant source, a field emitter dopant source, and an emitter dopant source are...
US-9,379,257 Electrical device and method for manufacturing same
An electrical device includes a first layer, a second layer and an intrinsic layer. The first layer is of a first conductivity type, wherein the second layer is...
US-9,379,256 Nonvolatile semiconductor memory device
A nonvolatile semiconductor memory device includes a charge storage layer on a first insulating film, a second insulating film which is provided on the charge...
US-9,379,255 Non-volatile memory cell having a floating gate and a coupling gate with improved coupling ratio therebetween
A non-volatile memory cell having a split gate, wherein the floating gate and the coupling/control gate have complimentary non-planar shapes. The shape may be a...
US-9,379,254 Amorphous oxide semiconductor thin film transistor fabrication method
This disclosure provides systems, methods and apparatus for fabricating thin film transistor (TFT) devices. In one aspect, a substrate having a source area, a...
US-9,379,253 Symmetric tunnel field effect transistor
The present disclosure relates to semiconductor structures and, more particularly, to a symmetric tunnel field effect transistor and methods of manufacture. The...
US-9,379,252 Thin film transistor and thin film transistor array panel including the same
A thin film transistor according to an exemplary embodiment of the present invention includes an oxide semiconductor. A source electrode and a drain electrode...
US-9,379,251 Self-aligned metal oxide thin film transistor and method of making same
A method for forming a TFT includes providing a substrate, a gate electrode on the substrate, an electrically insulating layer on the substrate to totally cover...
US-9,379,250 Semiconductor device and method for producing same
This semiconductor device (100A) includes: a substrate (2); a gate electrode (3) formed on the substrate (2); a gate insulating layer (4) formed over the gate...
US-9,379,249 Thin-film transistor, method for manufacturing the same and display device comprising the same
A thin-film transistor includes a substrate, a first gate electrode formed on the substrate, a first active layer that is formed on the substrate and includes a...
US-9,379,248 Thin-film transistor structure, as well as thin-film transistor and display device each having said structure
There is provided an oxide semiconductor layer capable of making stable the electric characteristics of a thin-film transistor without requiring an...
US-9,379,247 High mobility stabile metal oxide TFT
A method of fabricating a stable, high mobility metal oxide thin film transistor includes the steps of providing a substrate, positioning a gate on the...
US-9,379,246 Vertical thin film transistor selection devices and methods of fabrication
Three-dimensional (3D) non-volatile memory arrays having a vertically-oriented thin film transistor (TFT) select device and method of fabricating such a memory...
US-9,379,245 Thin film transistor substrate and display panel using the same
A thin film transistor includes a gate electrode, a semiconductor layer, a source electrode, a drain electrode, a first protective layer, and a second...
US-9,379,244 Semiconductor device having fin-type field effect transistor and method of manufacturing the same
A semiconductor device includes a substrate having a first region and a second region, a first MOS transistor including a first fin structure and a first gate...
US-9,379,243 Field-effect transistor with aggressively strained fins
In a method for fabricating a field-effect transistor (FET) structure, forming a shallow trench isolation (STI) structure on a semiconductor substrate, wherein...
US-9,379,242 Method of fabricating fin field effect transistor
A method of fabricating a fin field effect transistor including providing a substrate having at least one fin structure, a dummy gate, and an internal...
US-9,379,241 Semiconductor device with strained channels
In various method embodiments, a device region in a semiconductor substrate and isolation regions adjacent to the device region are defined. The device region...
US-9,379,240 Semiconductor device and manufacturing method thereof
A semiconductor device includes a substrate that has a surface. The semiconductor further includes a fin disposed on the surface and including a semiconductor...
US-9,379,239 Semiconductor device, method of manufacturing semiconductor device, and antenna switch module
Disclosed is a semiconductor device having a radio frequency switch. Also disclosed are an antenna switch module and a method of manufacturing the semiconductor...
US-9,379,238 Process for fabricating a field-effect transistor device implemented on a network of vertical nanowires, the...
A process for fabricating a field-effect transistor device (20) implemented on a network of vertical nanowires (24), includes: producing a source electrode (26)...
US-9,379,237 Lateral diffused metal-oxide-semiconductor device
A LDMOS includes a gate structure disposed on the surface of a semiconductor substrate, a source region having a first conductivity type, a drain region having...
US-9,379,236 LDMOS device and structure for bulk FinFET technology
A lateral double-diffused MOS (LDMOS) bulk finFET device for high-voltage operation includes a first-well region and two or more second-well regions formed on a...
US-9,379,235 Semiconductor device including a MOSFET and having a super-junction structure
In a semiconductor power device such as a power MOSFET having a super-junction structure in each of an active cell region and a chip peripheral region, an outer...
US-9,379,234 Semiconductor device
According to one embodiment, a semiconductor device includes first electrode, second electrode, and third electrodes, first, second, third, fourth, and fifth...
US-9,379,233 Semiconductor device
A semiconductor device 100 includes a plurality of vertical transistors 50 provided to stand from a silicon substrate 1 and having a pillar lower diffusion...
US-9,379,232 Magneto-electric voltage controlled spin transistors
The invention relates to a magneto-electric spin-FET including a gate film of chromia and a thin film of a conductive channel material which may be graphene,...
US-9,379,231 Transistor having increased breakdown voltage
A transistor includes a source finger electrode having a source finger electrode beginning and a source finger electrode end. The transistor also includes a...
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