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Patent # Description
US-9,385,274 Patterned opto-electrical substrate and method for manufacturing the same
The present invention relates to a patterned opto-electrical substrate, comprising a substrate, the substrate has a first patterned structure, a spacer region...
US-9,385,273 Group III nitride semiconductor light-emitting device and production method therefor
The Group III nitride semiconductor light-emitting device has an insulating multilayer film intervening between a second semiconductor layer and a transparent...
US-9,385,272 Optoelectronic device and the manufacturing method thereof
An optoelectronic device comprises an optoelectronic system for emitting a light and a semiconductor layer on the optoelectronic system, wherein the...
US-9,385,271 Device with transparent and higher conductive regions in lateral cross section of semiconductor layer
A device including one or more layers with lateral regions configured to facilitate the transmission of radiation through the layer and lateral regions...
US-9,385,270 Light-emitting device and light-emitting device package
A light-emitting device, according to one embodiment of the present invention, comprises: a first conductive semiconductor layer; an active layer on the first...
US-9,385,269 Semiconductor epitaxial structure and light-emitting device thereof
The present invention discloses an epitaxial structure for semiconductor light-emitting device, comprising an electron injection region, a hole injection...
US-9,385,268 Method of manufacturing semiconductor chips
A method of manufacturing semiconductor chips includes: forming grooves on a front face side of a substrate; and forming grooves on a back face side of the...
US-9,385,267 Light-emitting diode
A light-emitting diode (LED) includes a first type semiconductor layer, a second type semiconductor layer, a first current controlling structure, and a first...
US-9,385,266 Method of manufacturing a nanostructure light emitting device by planarizing a surface of the device
A nanostructure semiconductor light emitting device includes a base layer, an insulating layer, and a plurality of light emitting nanostructures. The base layer...
US-9,385,265 III-nitride light emitting device including porous semiconductor
A semiconductor structure comprising a III-nitride light emitting layer disposed between an n-type region and a p-type region is grown over a porous III-nitride...
US-9,385,264 II-VI based light emitting semiconductor device
The invention provides a light emitting semi conductor device comprising a zinc magnesium oxide based layer as active layer, wherein the zinc magnesium oxide...
US-9,385,263 Method for producing a dopant profile
A method for producing a dopant profile is provided. The method includes starting from a surface of a wafer-shaped semiconductor component by introducing dopant...
US-9,385,262 Method of manufacturing semiconductor device and semiconductor device
A method of manufacturing a semiconductor device provided with an interlayer insulating film formed on a semiconductor substrate, and a plurality of wiring...
US-9,385,261 Solar cell and method of manufacturing the same
A solar cell and a method of manufacturing a solar cell are disclosed. The solar cell includes forming a first doped region of a first conductive type and a...
US-9,385,260 Apparatus and methods for forming thin film solar cell materials
A method for forming thin film solar cell materials introducing a first inert gas mixture that includes hydrogen selenide into a chamber at a first pressure...
US-9,385,259 Method for manufacturing a metallization structure comprising aluminum and silicon
In various embodiments, a solar cell screen-printing composition is provided, comprising aluminum; and silicon; the percentage by mass of silicon lying in a...
US-9,385,258 Optoelectronic semiconductor device with protective and reflective sheaths
An optoelectronic semiconductor device includes at least one radiation-emitting and/or radiation-receiving semiconductor chip including a radiation passage...
US-9,385,257 Solution searching system by quantum dots
There are provided a quantum dot, a plurality of quantum dots having a larger volume than the quantum dot, a light detection unit for detecting a light emission...
US-9,385,256 Solar cell panel
A solar cell panel is discussed, which includes a plurality of solar cells, each solar cell including a substrate having a first surface and a second surface...
US-9,385,255 Integrated thin film solar cell interconnection
Photovoltaic modules may include multiple flexible thin film photovoltaic cells electrically connected in series, and laminated to a substantially transparent...
US-9,385,254 Integrated thin film solar cell interconnection
Photovoltaic modules may include multiple flexible thin film photovoltaic cells electrically connected in series, and laminated to a substantially transparent...
US-9,385,253 Method of manufacturing solar cell module
A method of manufacturing a solar cell module comprising adhering a first silicone gel sheet to one surface of a transparent light receiving panel to be a...
US-9,385,252 Method for insulating aluminum backboard of photovoltaic
A method for insulating an aluminum backboard of a photovoltaic module comprises the following steps: shearing the aluminum backboard such that the dimensions...
US-9,385,251 Flexible semiconductor devices and methods of manufacturing the same
A flexible semiconductor device and a method of manufacturing the flexible semiconductor device are provided. The flexible semiconductor device may include at...
US-9,385,249 Optical element module, optical transmission module, and method of manufacturing optical transmission module
An optical element module includes an optical element having a light receiving unit configured to input an optical signal or a light emitting unit configured to...
US-9,385,248 Solar cell panel
A solar cell panel is discussed. The solar cell panel includes a plurality of solar cells, each solar cell including a substrate and a plurality of back...
US-9,385,247 Passivation scheme for solar cells
A method of forming an oxide layer on an exposed surface of a semiconductor device which contains a p-n junction is disclosed, the method comprising: immersing...
US-9,385,246 Differential MOSCAP device
A differential MOS capacitor includes a first plurality of upper capacitor plates, a second plurality of upper capacitor plates, and a conductive plate. At...
US-9,385,245 Gate tunable tunnel diode
A gate tunable diode is provided. The gate tunable diode includes a gate dielectric formed on a gate electrode and a graphene electrode formed on the gate...
US-9,385,244 Wide bandgap semiconductor device
A wide bandgap semiconductor device includes a wide bandgap semiconductor layer and a Schottky electrode. The wide bandgap semiconductor layer includes a first...
US-9,385,243 Semiconductor device
A semiconductor device includes a first electrode, a second electrode, a first semiconductor region that is formed between the first electrode and the second...
US-9,385,242 Semiconductor diode assembly
TSV devices with p-n junctions that are planar have superior performance in breakdown and current handling. Junction diode assembly formed in enclosed trenches...
US-9,385,241 Electrostatic discharge (ESD) protection circuits, integrated circuits, systems, and methods for forming the...
An electrostatic discharge (ESD) protection circuit coupled with an input/output (I/O) pad is provided. The ESD protection circuit includes a first field oxide...
US-9,385,240 Memory device and method for fabricating the same
A memory device includes a substrate, a first doped region, composite structures, word lines, and a charge storage layer. The first doped region is disposed on...
US-9,385,239 Buffer layers for metal oxide semiconductors for TFT
The present invention generally relates to a thin film semiconductor device having a buffer layer formed between the semiconductor layer and one or more layers....
US-9,385,238 Transistor using oxide semiconductor
Stable electrical characteristics and high reliability are provided for a semiconductor device including an oxide semiconductor. In a transistor including an...
US-9,385,237 Source and drain doping profile control employing carbon-doped semiconductor material
Carbon-doped semiconductor material portions are formed on a subset of surfaces of underlying semiconductor surfaces contiguously connected to a channel of a...
US-9,385,236 Fin shaped semiconductor device structures having tipped end shape and method for fabricating the same
A semiconductor device and a method of forming the same, the semiconductor device includes a plurality of fin shaped structures and a dummy gate structure. The...
US-9,385,235 Fin field effect transistor (FinFET) device and method for forming the same
A fin field effect transistor (FinFET) device structure and method for forming FinFET device structure are provided. The FinFET structure includes a substrate...
US-9,385,234 FinFETs with strained well regions
A device includes a substrate, insulation regions extending into the substrate, a first semiconductor region between the insulation regions and having a first...
US-9,385,233 Bulk finFET with partial dielectric isolation featuring a punch-through stopping layer under the oxide
A bulk finFET with partial dielectric isolation is disclosed. The dielectric isolation is disposed underneath the channel, and essentially bounded by the...
US-9,385,232 FD devices in advanced semiconductor techniques
The present disclosure provides in some aspects a semiconductor device and a method of forming a semiconductor device. According to some illustrative...
US-9,385,231 Device structure with increased contact area and reduced gate capacitance
A FET structure including epitaxial source and drain regions includes large contact areas and exhibits both low resistivity and low parasitic gate to...
US-9,385,230 Semiconductor device
A semiconductor device including a first conductor layer, a second conductor layer formed over the first conductor layer, a third conductor layer formed over...
US-9,385,229 Semiconductor device with improved breakdown voltage
Semiconductor device structures and related fabrication methods are provided. An exemplary semiconductor device structure includes a first region of...
US-9,385,228 Semiconductor device with cell trench structures and contacts and method of manufacturing a semiconductor device
A semiconductor mesa is formed in a semiconductor layer between a first cell trench structure and a second cell trench structure extending from a first surface...
US-9,385,227 Power devices, structures, components, and methods using lateral drift, fixed net charge, and shield
Lateral power devices where immobile electrostatic charge is emplaced in dielectric material adjoining the drift region. A shield gate is interposed between the...
US-9,385,226 Semiconductor heterojunction device
A heterojunction semiconductor device (200) comprising a substrate (202) and a multilayer structure disposed on the substrate. The multilayer structure...
US-9,385,225 Method of making a circuit structure having islands between source and drain
A method of making a circuit structure includes growing a bulk layer over a substrate, and growing a donor-supply layer over the bulk layer. The method further...
US-9,385,224 Method of forming an integrated multichannel device and single channel device structure
An integrated circuit is disclosed that includes a single channel device having a first portion of a single shared heterostructure overlying a substrate...
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