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Active matrix organic light-emitting diode array substrate, manufacturing
method thereof and display device...
An active matrix organic light-emitting diode array substrate, a manufacturing method thereof and a display device including the same are disclosed to improve...
Thin film transistor array panel and organic light emitting diode display
including the same
A thin film transistor array panel according to an exemplary embodiment includes: a substrate; a thin film transistor positioned on the substrate; a first...
Multi-functional active matrix organic light-emitting diode display
A multi-functional active matrix display comprises a transparent front sheet, a semi-transparent layer of light emissive devices adjacent the rear side of the...
High resolution low power consumption OLED display with extended lifetime
Arrangements of pixel components that allow for full-color devices, while using emissive devices that emit at not more than two colors, and/or a limited number...
OLED display architecture
A device that may be used as a multi-color pixel is provided. The device has a first organic light emitting device, a second organic light emitting device, a...
Image sensor and image processing device
An image sensor includes a semiconductor layer, an organic photoelectric conversion portion disposed on an upper surface of the semiconductor layer and that...
Photovoltaics using concave surface column array to enhance sunlight
A photovoltaic device forming a solar cell includes a first surface on a first column and a second surface on a second column, wherein the first surface is...
Method of making a resistive random access memory device with metal-doped
resistive switching layer
A method for forming a resistive random access memory (RRAM) device is disclosed. The method comprises forming a first electrode, forming a resistive switching...
Addressable SiOX memory array with incorporated diodes
Various embodiments of the resistive memory cells and arrays discussed herein comprise: (1) a first electrode; (2) a second electrode; (3) resistive memory...
Programmably reversible resistive device cells using CMOS logic processes
Junction diodes fabricated in standard CMOS logic processes can be used as program selectors for reversible resistive devices, such as PCM, RRAM, CBRAM, or...
Semiconductor integrated circuit device having reservoir capacitor and
method of manufacturing the same
A semiconductor integrated circuit device having a reservoir capacitor and a method of manufacturing the same are provided. A first insulating layer is formed...
Semiconductor storage device
A memory includes a semiconductor substrate. Magnetic tunnel junction elements are provided above the semiconductor substrate. Each of the magnetic tunnel...
Electronic circuitry having superconducting tunnel junctions with
A device includes at least one superconducting tunnel junction having a junction region comprising a junction barrier material responsive to electromagnetic...
Bipolar junction transistor pixel circuit, driving method thereof, and
A bipolar junction transistor (BJT) pixel circuit, an image sensor and a driving method thereof are provided. The BJT pixel circuit includes a BJT, a...
Pixel of an image sensor, and image sensor
A pixel of an image sensor includes a photoelectric conversion region formed in a semiconductor substrate, a floating diffusion region formed in the...
Method of manufacturing a back side illuminated (BSI) image sensor
Some embodiments of the present disclosure provide a method of manufacturing a back side illuminated (BSI) image sensor. The method includes receiving a...
A light receiving region includes a plurality of light detecting sections 10. The light detecting sections 10 has a second contact electrode 4A. The second...
Solid-state image sensor, driving method and electronic apparatus
There is provided a solid-state image sensor including a pixel region in which a plurality of pixels of a preset plurality of colors are arranged in a...
Image sensor device with flexible interconnect layer and related methods
An image sensor device may include an interconnect layer having an opening extending therethrough, an image sensor IC within the opening and having an image...
Solid-state image pickup device and image pickup system
The present invention relates to a solid-state image pickup device. The device includes a first substrate including a photoelectric conversion element and a...
Manufacturing method for edge illuminated type photodiode and
A manufacturing method for an edge illuminated type photodiode has: a process of forming an impurity-doped layer of a first conductivity type in each of device...
Image sensor device
An image sensor and image sensor device include: a lighting portion extending in a main scanning direction and emitting light to the object-to-be-read; a rod...
CMOS imaging device having optimized shape, and method for producing such
a device by means of photocomposition
An imaging device comprises a sensor of surface area of at least 10 cm.sup.2 and comprising: an image zone produced on a single substrate and comprising a group...
Solid-state imaging device and electronic camera
A solid-state imaging device includes a second image sensor having an organic photoelectric conversion film transmitting a specific light, and a first image...
Electronic systems, thin film transistors, methods of manufacturing thin
film transistors and thin film...
Thin film transistors (TFT) and methods of manufacturing the same. A TFT includes a line-shaped gate of uniform thickness. A cross-section of the gate is curved...
Rework method of array substrate for display device and array substrate
formed by the method
The present invention provides a method of reworking an array substrate including a gate metal layer, a gate insulation layer (G1), a semiconductor layer, a...
Double thin film transistor structure with shared gate
A double thin film transistor includes a first semiconductor layer, a gate, a second semiconductor layer, a first insulating layer, a second insulating layer, a...
Array substrate and display device
An array substrate and a display device that comprises the array substrate are disclosed. The array substrate comprises a base substrate, a plurality of scan...
TFT array substrate, and liquid crystal display panel
An embodiment of the present invention provides a TFT array substrate, in which TFT elements and pixel electrodes being correspondingly connected with the TFT...
Liquid crystal display and manufacturing method thereof
A liquid crystal display includes: an insulation substrate, a gate line disposed on the insulation substrate, a first field generating electrode disposed on the...
Array substrate, display panel and method for manufacturing array
An array substrate comprises a plurality of pixel units, and each pixel unit comprises a thin film transistor (TFT), a transparent conductive metal layer and a...
Efficient buried oxide layer interconnect scheme
An integrated circuit has a buried interconnect in the buried oxide layer connecting a body of a MOS transistor to a through-substrate via (TSV). The buried...
Three dimensional semiconductor memory devices and methods of fabricating
A 3D semiconductor device includes an electrode structure has electrodes stacked on a substrate, semiconductor patterns penetrating the electrode structure,...
Memory devices including vertical pillars and methods of manufacturing and
operating the same
In a semiconductor device and a method of forming such a device, the semiconductor device comprises a substrate of semiconductor material extending in a...
Semiconductor memory device and method for manufacturing same
According to one embodiment, a method for manufacturing a semiconductor memory device includes forming a stacked body by alternately stacking an insulating film...
Silicon dot formation by self-assembly method and selective silicon growth
for flash memory
Some embodiments of the present disclosure relate to a method that achieves a substantially uniform pattern of discrete storage elements within a memory cell. A...
Nonvolatile memory device and method for fabricating the same
A nonvolatile memory device includes a substrate; a channel layer projecting from a surface of the substrate, in a direction perpendicular to the surface; a...
Semiconductor device and method forming patterns with spaced pads in trim
In a semiconductor device, parallel first and second conductive lines having a unit width extend from a memory cell region into a connection region. A trim...
Semiconductor device including memory cell with transistors disposed in
different active regions
A semiconductor device having an SRAM which includes: a monolithic first active region in which a first transistor and a fifth transistor are disposed; a second...
Arrays of recessed access devices, methods of forming recessed access gate
constructions, and methods of...
A method of forming an array of recessed access device gate constructions includes using the width of an anisotropically etched sidewall spacer in forming mask...
Wrap-around fin for contacting a capacitor strap of a DRAM
A conductive strap structure in lateral contact with a top semiconductor layer is formed on an inner electrode of a deep trench capacitor. A cavity overlying...
Semiconductor device and method for manufacturing the same
In order to achieve the reduction of contact resistance by forming a metal silicide layer with a sufficient thickness in an interface between a polycrystalline...
Method of forming a memory capacitor structure using a self-assembly
A capacitor structure and method of forming thereof on a substrate is described. The capacitor structure includes a substrate having a plurality of capacitor...
Memory device and electronic device
A selection operation is performed for individual memory cells. A device includes a first memory cell and a second memory cell provided in the same row as the...
Method and apparatus for suppressing metal-gate cross-diffusion in
An inverter includes: a PMOS comprising: a p-type source region, a p-type drain region, a p-channel region between the p-type source region and the p-type drain...
Silicon-on-insulator finFET with bulk source and drain
Embodiments of the invention provide a semiconductor structure including a finFET having an epitaxial semiconductor region in direct physical contact with a...
Semiconductor integrated circuit device
An MV-PMOS and MV-NMOS configuring a high side drive circuit are formed in an n-type isolation region formed on a p-type semiconductor substrate. The MV-NMOS is...
Methods of forming reduced thickness spacers in CMOS based integrated
One method disclosed herein includes, among other things, forming a first spacer proximate gate structures of first and second transistors that are opposite...
STI region for small fin pitch in FinFET devices
The present invention relates generally to semiconductor devices, and particularly to fabricating a shallow trench isolation (STI) region in fin field effect...
Method of manufacturing a semiconductor device using source/drain
epitaxial overgrowth for forming self-aligned...
A method for manufacturing a semiconductor device comprises growing a source/drain epitaxy region over a plurality of gates on a substrate, wherein a top...