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Patent # Description
US-9,385,021 Electronic knob for tuning radial etch non-uniformity at VHF frequencies
System and methods for plasma processing of a wafer include a chamber with an electrode having a support surface and an outer edge region defined thereon. A...
US-9,385,020 Substrate holding and rotating device, substrate treatment apparatus including the device, and substrate...
A substrate holding and rotating device includes: a turntable rotatable; a rotative drive unit which rotates the turntable; a holding member which is provided...
US-9,385,019 Overhead substrate handling and storage system
A material handling system includes an overhead rack defining a plurality of storage positions. The overhead rack defines at least one interior window devoid of...
US-9,385,018 Semiconductor manufacturing equipment with trace elements for improved defect tracing and methods of manufacture
A semiconductor manufacturing equipment comprising trace elements and method of manufacture are disclosed. The semiconductor manufacturing equipment includes...
US-9,385,017 Apparatus and methods for handling workpieces of different sizes
Apparatus and methods for plasma processing workpieces of different diameters. The apparatus includes a lift plate having an outer perimeter, an opening inside...
US-9,385,016 Semiconductor processing system and program
In a processing system of a linear tool in which plural carrying robots are arranged in carrying mechanical units to which processing modules are coupled and a...
US-9,385,015 Transfer chamber and method for preventing adhesion of particle
A transfer chamber is provided between a processing unit for performing a predetermined process on a target substrate to be processed in a depressurized...
US-9,385,014 Flip-chip package covered with tape
A manufacturing method of a semiconductor device includes arranging a melted resin on a substrate, arranging a semiconductor chip on the melted resin, pressing...
US-9,385,013 Method and apparatus of manufacturing a semiconductor device by forming a film on a substrate
Provided is a technique including forming a film by performing a cycle a predetermined number of times. The cycle includes: (a) forming a discontinuous first...
US-9,385,012 Substrate processing method and substrate processing apparatus
Scan step (S3) for moving a nozzle with etching liquid discharged therefrom is carried out such that etching liquid application position toward the rotating...
US-9,385,011 Apparatus for processing semiconductor wafers, in particular for carrying out a polymers removal process step
An apparatus for processing semiconductor wafers includes at least a wet bench and an automatic handling system of a wafer carrier removably connected thereto....
US-9,385,010 Multiple swivel arm design in hybrid bonder
An apparatus for cleaning a wafer includes a wafer station configured to hold the wafer, and a first and a second dispensing system. The first dispensing system...
US-9,385,009 Semiconductor device and method of forming stacked vias within interconnect structure for Fo-WLCSP
A semiconductor device has a semiconductor die mounted to a carrier. An encapsulant is deposited over the semiconductor die and carrier. The carrier is removed....
US-9,385,008 Semiconductor component of semiconductor chip size with flip-chip-like external contacts
A semiconductor component and a method for its production in semiconductor chip size, can have a semiconductor chip, which has external contacts of the...
US-9,385,007 Semiconductor device and method of manufacturing the same
A plurality of semiconductor elements for power control are formed on a semiconductor substrate. A stress relaxation resin layer covering a crossing region...
US-9,385,006 Semiconductor device and method of forming an embedded SOP fan-out package
A semiconductor device includes a ball grid array (BGA) package including first bumps. A first semiconductor die is mounted to the BGA package between the first...
US-9,385,005 Semiconductor device and method of making
The present disclosure is related to semiconductor technologies and discloses a semiconductor device and its method of making. In the present disclosure, a...
US-9,385,004 Support cylinder for thermal processing chamber
Embodiments of the disclosure generally relate to a support cylinder used in a thermal process chamber. In one embodiment, the support cylinder comprises a ring...
US-9,385,003 Residue free systems and methods for isotropically etching silicon in tight spaces
Systems and methods for etching a substrate include arranging a substrate including a first structure and a dummy structure in a processing chamber. The first...
US-9,385,002 Semiconductor devices and fabricating methods thereof
Fabricating methods of a semiconductor device are provided. The fabricating methods may include forming a mold layer, forming a catalyst pattern including noble...
US-9,385,001 Self-aligned ITO gate electrode for GaN HEMT device
A P-N junction gate high electron mobility transistor (HEMT) device with a self-aligned gate structure and a method for making the HEMT device is disclosed. In...
US-9,385,000 Method of performing etching process
A method of performing an etching process is provided. A substrate is provided, wherein a first region and a second region are defined on the substrate, and an...
US-9,384,999 Plasma etching method and storage medium
A plasma etching method that can prevent residues from becoming attached to bottoms and sides of via holes and trenches. An interlayer insulation film formed of...
US-9,384,998 Technique to deposit sidewall passivation for high aspect ratio cylinder etch
Various embodiments herein relate to methods, apparatus and systems for forming a recessed feature in dielectric material on a semiconductor substrate. Separate...
US-9,384,997 Dry-etch selectivity
A method of etching exposed patterned heterogeneous structures is described and includes a remote plasma etch formed from a reactive precursor. The plasma power...
US-9,384,996 Method for manufacturing semiconductor device and device manufactured by the same
A method for manufacturing a semiconductor device and a device manufactured by the same are provided. According to the embodiment, a substrate having at least a...
US-9,384,995 Tungsten salicide gate source for vertical NAND string to control on current and cell pillar fabrication
A non-volatile memory device and a method for forming the non-volatile memory device are disclosed. During fabrication of the memory device, a tungsten salicide...
US-9,384,994 Method of forming multiple patterning spacer structures
Disclosed herein is a method of forming a structure, comprising forming a mandrel layer over a substrate, masking the mandrel layer with a first mask and...
US-9,384,993 Oxide etching method
An oxide etching method includes loading an object to be processed, on a surface of which a patterned silicon oxide film is formed, in a chamber, supplying HF...
US-9,384,992 Plasma processing method
A plasma processing method is provided for etching a multilayer film having a first film and a second film with differing dielectric constants alternatingly...
US-9,384,991 Carbon layer and method of manufacture
A system and method for manufacturing a carbon layer is provided. An embodiment comprises depositing a first metal layer on a substrate, the substrate...
US-9,384,990 Titanium nitride electrode
The present invention relates to a method for decreasing the impedance of a titanium nitride element for use in an electrode component. The method comprises...
US-9,384,989 Sonos device and method for fabricating the same
An improved semiconductor device is provided whereby the semiconductor device is defined by a layered structure comprising a first dielectric layer, a data...
US-9,384,988 Gate protection caps and method of forming the same
A structure includes a substrate, a gate structure over the substrate, a dielectric layer over the substrate, and a cap over a gate electrode of the gate...
US-9,384,987 Metal oxide protective layer for a semiconductor device
Embodiments related to metal oxide protective layers formed on a surface of a halogen-sensitive metal-including layer present on a substrate processed in a...
US-9,384,986 Dual-metal gate CMOS devices and method for manufacturing the same
A method for manufacturing a dual metal CMOS device comprising: forming a first type metal work function modulation layer in the first gate trench and the...
US-9,384,985 Semiconductor structure including silicon and oxygen-containing metal layer and process thereof
A metal gate process for polishing and oxidizing includes the following steps. A first dielectric layer having a trench is formed on a substrate. A barrier...
US-9,384,984 Semiconductor structure and method of forming the same
A method of forming a semiconductor device is disclosed. A substrate having a dielectric layer thereon is provided. The dielectric layer has a gate trench...
US-9,384,983 Method of manufacturing a vertical semiconductor device
A method for producing a vertical semiconductor device includes providing a semiconductor substrate having a first surface and comprising an n-doped first...
US-9,384,982 Depositing material into high aspect ratio structures
A method is provided, along with a corresponding apparatus, for filling a high aspect ratio hole without voids or for producing high aspect ratio structures...
US-9,384,981 Method of manufacturing silicon carbide semiconductor device
A method of manufacturing a silicon carbide semiconductor device includes the steps of preparing a silicon carbide substrate, forming a first electrode on the...
US-9,384,980 Manufacturing method of semiconductor device
According to an embodiment, a manufacturing method of a semiconductor device includes: forming a first film on a processing target by using a first material;...
US-9,384,979 Apparatus for the deposition of a conformal film on a substrate and methods therefor
A method for depositing a conformal film on a substrate in a plasma processing chamber of a plasma processing system, the substrate being disposed on a chuck,...
US-9,384,978 Method of forming trenches
The present invention provides a method for forming trenches. First, a mandrel layer is formed on a substrate, wherein the mandrel layer comprises a stop layer...
US-9,384,977 Method of manufacturing semiconductor device using organic underlayer film forming composition for solvent...
A method of manufacturing a semiconductor device by use of an underlayer film material can form a good pattern without deteriorating the resolution limit. A...
US-9,384,976 Method for manufacturing semiconductor device
It is an object to drive a semiconductor device at high speed or to improve the reliability of the semiconductor device. In a method for manufacturing the...
US-9,384,975 Nanowire devices
A method of forming nanowire devices. The method includes forming a stressor layer circumferentially surrounding a semiconductor nanowire. The method is...
US-9,384,974 Trench filling method and processing apparatus
The present disclosure provides a method for filling a trench formed on an insulating film of a workpiece. The method includes forming a first ...
US-9,384,973 Methods of forming semiconductor films and methods of manufacturing transistors including semiconductor films
Provided are semiconductor films, methods of forming the same, transistors including the semiconductor films, and methods of manufacturing the transistors....
US-9,384,972 Method of manufacturing semiconductor device by forming a film on a substrate
Provided is a technique of forming a film on a substrate by performing a cycle a predetermined number of times. The cycle includes: forming a first layer by...
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