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Two-dimensional APDs and SPADs and related methods
Avalanche photodiodes (APDs) and single photon avalanche detectors (SPADs) are provided with a lateral multiplication region that provides improved...
Disclosed is a solar battery which: is made from a silicon semiconductor; has a high quantum-conversion efficiency; requires a small number of production steps...
Photovoltaic sheathing element with a flexible connector assembly
The present invention is premised upon an assembly including at least a photovoltaic sheathing element capable of being affixed on a building structure, the...
Frame for a plate-shaped solar element
The invention relates to a frame for a plate-shaped solar element. The frame includes a bottom frame element (21) with a first surface (24) and a top frame...
Solar cell module and apparatus for generating photovoltaic power
A solar cell module includes a solar cell panel including at least one solar cell; and a frame positioned at a periphery of the solar cell panel. The frame...
System and method for interfacing large-area electronics with integrated
A system and method for interfacing large-area electronics with integrated circuit devices is provided. The system may be implemented in an electronic device...
A photovoltaic apparatus includes a support substrate; a back electrode layer on the support substrate; a light absorbing layer on the back electrode layer; and...
Voltaic cell powered by radioactive material
A voltaic cell uses a radioactive material for energy. Energetic particles emitted by the radioactive material boost charge carriers within a semiconductor...
Aluminum-based compositions and solar cells including aluminum-based
The present invention describes an aluminum-based paste composition including an aluminum powder, one or more glass frits, an organo-aluminate compound; and an...
Optical coupled sensors for harsh environments
An optical sensor comprising a light source; a sensor substrate, arranged to receive a force to be detected, the sensor substrate including an interference...
Device for generating photovoltaic power and method for manufacturing same
Disclosed are a solar cell apparatus and a method of fabricating the same. The solar cell apparatus includes a substrate; a first cell on the substrate; a...
A MOS varactor structure comprising a semiconductor body having a well region and a plurality of gate electrodes and a plurality of cathode electrodes arranged...
Thin film transistor and display device using the same
In a bottom gate thin film transistor using a first oxide semiconductor layer as a channel layer, the first oxide semiconductor layer and second semiconductor...
Thin film transistor array panel and organic light emitting diode display
including the same
A thin film transistor substrate according to an exemplary embodiment includes: a substrate; a gate electrode disposed on the substrate; a gate insulating layer...
Compositions for solution process, electronic devices fabricated using the
same, and fabrication methods thereof
Exemplary embodiments provide compositions for a solution process, electronic devices fabricated using the same, and fabrication methods thereof. An oxide...
Top gate TFT with polymer interface control layer
A transistor includes a substrate and a polymer layer that is in contact with the substrate. The polymer layer has a first pattern defining a first area. There...
An object is to provide a semiconductor device including an oxide semiconductor in which miniaturization is achieved while favorable characteristics are...
Electronic device and method of manufacturing the same
An electronic device including at least one electronic component and a method of manufacturing the same are provided. The electronic device may include a...
Thin film transistor, array substrate and manufacturing method thereof,
and display device
The present invention provides a low-temperature polysilicon thin film transistor and a manufacturing method thereof, an array substrate and a manufacturing...
Methods of forming transistors
Some embodiments include methods of forming transistors. Recesses are formed to extend into semiconductor material. The recesses have upper regions lined with...
Gate last semiconductor structure and method for forming the same
A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a substrate and a metal gate structure formed...
After forming a first-side epitaxial semiconductor region and a second-side epitaxial semiconductor region on recessed surfaces of a semiconductor portion that...
Channel epitaxial regrowth flow (CRF)
A Fin-FET fabrication approach and structure are provided using channel epitaxial regrowth flow (CRF). The method includes forming a Fin-FET structure including...
The semiconductor device including: a semiconductor layer extending in a first direction, the semiconductor layer including a pair of source/drain regions and a...
Source/drain structure and manufacturing the same
A fin-like field-effect transistor (FinFET) device is disclosed. The device includes a semiconductor substrate having a source/drain region, a plurality of...
FinFETs having strained channels, and methods of fabricating finFETs
having strained channels
Techniques and structures for controlling etch-back of a finFET fin are described. One or more layers may be deposited over the fin and etched. Etch-back of a...
Strained semiconductor trampoline
A method of forming a strained trampoline including: forming a strain inducing layer on a semiconductor-on-insulator (SOI), the SOI having a semiconductor layer...
Semiconductor device and operating method thereof
A semiconductor device includes a substrate; a deep well region disposed in the substrate; an element region disposed in the substrate and in the deep well...
High-voltage metal-oxide-semiconductor transistor device and manufacturing
A high-voltage metal-oxide-semiconductor (HV MOS) transistor device and a manufacturing method thereof are provided. The HV MOS transistor device includes a...
High side gate driver device
The present disclosure provides a semiconductor device. The semiconductor device includes: a drift region having a first doping polarity formed in a substrate;...
High voltage vertical FPMOS fets
Semiconductor power devices such as vertical FPMOS are described preferably having a plurality of trenches formed at a top portion of a semiconductor substrate...
Trench-based power semiconductor devices with increased breakdown voltage
Exemplary power semiconductor devices with features providing increased breakdown voltage and other benefits are disclosed.
Field effect semiconductor component and method for producing it
What is provided is a field effect component including a semiconductor body, which extends in an edge zone from a rear side as far as a top side and which...
Trench FET having merged gate dielectric
In one implementation, a trench field-effect transistor (trench FET) includes a semiconductor substrate having a drain region, a drift zone over the drain...
Field effect transistor incorporating a Schottky diode
A FET incorporating a Schottky diode has a structure allowing the ratio of an area in which the Schottky diode is formed and an area in which the FET is formed...
Lateral/vertical semiconductor device
A lateral semiconductor device and/or design including a space-charge generating layer and a set of electrodes located on an opposite side of a device channel...
Semiconductor device and method for fabricating semiconductor device
Disclosed is a semiconductor device and a method for fabricating the semiconductor device. The method for fabricating the semiconductor device comprises steps...
Semiconductor heterojunction device
In an example embodiment, a heterojunction device comprises a substrate, a multilayer structure disposed on the substrate. The multilayer structure has a first...
A semiconductor device may include: a first semiconductor layer having a first band gap; a second semiconductor layer including first and second regions...
III-nitride power semiconductor device
A III-nitride power semiconductor device that includes a two dimensional electron gas having a reduced charge region under the gate thereof.
Insulated gate turn-off device with turn-off transistor
An insulated gate turn-off (IGTO) device, formed as a die, has a layered structure including a p+ layer (e.g., a substrate), an n- epi layer, a p-well, vertical...
A semiconductor device is disclosed that comprises semiconductor regions and an insulating film. A groove extends from a top surface of a semiconductor region...
Trench insulated-gate bipolar transistor and manufacture method thereof
A Trench Insulated Gate Bipolar Transistor (IGBT) and a manufacture method thereof are provided by the present invention, which belongs to the field of IGBT...
Lattice mismatched hetero-epitaxial film
An embodiment concerns forming an EPI film on a substrate where the EPI film has a different lattice constant from the substrate. The EPI film and substrate may...
Heterojunction bipolar transistors with intrinsic interlayers
Heterojunction bipolar transistors are provided that include at least one contact (e.g., collector, emitter, and/or base) formed by a heterojunction between a...
Vertical GaN JFET with low gate-drain capacitance and high gate-source
An embodiment of a vertical power device includes a III-nitride substrate, a drift region coupled to the III-nitride substrate and comprising a III-nitride...
Method of manufacturing semiconductor device
Provided is a method of manufacturing a semiconductor device which allows an operation of the semiconductor device to be stabilized without increasing the area...
Method of fabricating semiconductor structure
The present invention provides a method for improving gate coupling ratio of a flash memory device and a protruding floating gate is formed. First, a substrate...
Multi-gate FETs having corrugated semiconductor stacks and method of
forming the same
The present disclosure provides, in various aspects of the present disclosure, a semiconductor device which includes a semiconductor stack disposed over a...
Fin end spacer for preventing merger of raised active regions
After formation of gate structures over semiconductor fins and prior to formation of raised active regions, a directional ion beam is employed to form a...