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Patent # Description
US-9,391,174 Method of uniform fin recessing using isotropic etch
Uniform fin recessing for the situation of recessing nonadjacent fins and the situation of recessing adjacent fins includes providing a starting semiconductor...
US-9,391,173 FinFET device with vertical silicide on recessed source/drain epitaxy regions
A method of forming a semiconductor device that includes forming a fin structure from a semiconductor substrate, and forming a gate structure on a channel...
US-9,391,172 Methods of shaping a channel region in a semiconductor fin using doping
Provided is a method of fabricating a transistor. The method includes forming a fin portion protruding upward from a substrate, forming a device isolation...
US-9,391,171 Fin field effect transistor including a strained epitaxial semiconductor shell
A semiconductor fin including a single crystalline semiconductor material is formed on a dielectric layer. A semiconductor shell including an epitaxial...
US-9,391,170 Three-dimensional field-effect transistor on bulk silicon substrate
A field-effect transistor (FET) on bulk substrate and a method of fabricating the same is discussed herein. The FET includes a dielectric layer disposed on the...
US-9,391,169 Thin film transistor and manufacturing method thereof and display comprising the same
Provided is a TFT with an improved gate insulator, having an insulator substrate, a gate layer, a gate insulator layer, a active semiconductor layer, and a...
US-9,391,168 Manufacturing method of a thin film transistor utilizing a pressing mold and active-matrix display devices made...
A manufacturing method of an electronic device simplifies the process by performing a patterning process by using an imprinting technology. An electronic device...
US-9,391,167 Method for manufacturing semiconductor device
A method for manufacturing a semiconductor device includes: forming sequentially an n- type epitaxial layer and an n+ type area on a first surface of an n+ type...
US-9,391,166 Non-volatile memory device and method for fabricating the same
A method for fabricating a non-volatile memory device includes: providing a substrate which includes a cell region where a plurality of memory cells are to be...
US-9,391,165 Semiconductor device and method of manufacturing the semiconductor device
A semiconductor device includes a semiconductor region, a first well region which has a first conductive type, a second well region which has a second...
US-9,391,164 Method to improve reliability of replacement gate device
A method of fabricating a replacement gate stack for a semiconductor device includes the following steps after removal of a dummy gate: growing a high-k...
US-9,391,163 Stacked planar double-gate lamellar field-effect transistor
A method of making a field-effect transistor device includes providing a substrate with a fin stack having: a first sacrificial material layer on the substrate,...
US-9,391,162 Tunnel MOSFET with ferroelectric gate stack
A Tunnel Field-Effect Transistor (TFET) includes a source region in a semiconductor substrate, and a drain region in the semiconductor substrate. The source...
US-9,391,161 Manufacture of a tunnel diode memory
A design of a non-transistor memory core with corresponding shift register control logic may be all comprised of tunnel diodes and capacitors, and a method for...
US-9,391,160 Unguarded Schottky barrier diodes with dielectric underetch at silicide interface
One embodiment of the invention relates to an unguarded Schottky barrier diode. The diode includes a cathode that has a recessed region and a dielectric...
US-9,391,159 Triple well isolated diode and method of making
A triple well isolate diode including a substrate having a first conductivity type and a buried layer formed in the substrate, where the buried layer has a...
US-9,391,158 Method of fabricating semiconductor device having high-k gate insulation films including work function...
A semiconductor device having high-k gate insulation films and a method of fabricating the semiconductor device are provided. The semiconductor device includes...
US-9,391,157 Semiconductor transistor device
A semiconductor device including an oxide semiconductor that is miniaturized and has favorable electrical characteristics is provided. The semiconductor device...
US-9,391,156 Embedded capacitor
A method of manufacturing a semiconductor device is provided, including forming a gate electrode of a dummy transistor device on a semiconductor substrate,...
US-9,391,155 Gate structure integration scheme for fin field effect transistors
In one embodiment, a semiconductor device is provided that includes a gate structure present on a channel portion of a fin structure. The gate structure...
US-9,391,154 Method of manufacturing a device by locally heating one or more metalization layers and by means of selective...
A method of manufacturing a device comprises depositing one or more metallization layers to a substrate, locally heating an area of the one or more...
US-9,391,153 III-V compound semiconductor device having metal contacts and method of making the same
A semiconductor device comprises a semiconductor substrate; a channel layer of at least a first III-V semiconductor compound above the semiconductor substrate;...
US-9,391,152 Implantation formed metal-insulator-semiconductor (MIS) contacts
A method of forming a metal-insulator-semiconductor (MIS) contact, a transistor including the MIS contact, and the MIS contact are described. The method...
US-9,391,151 Split gate memory device for improved erase speed
Some embodiments relate to a memory device with an asymmetric floating gate geometry. A control gate is arranged over a floating gate. An erase gate is arranged...
US-9,391,150 Semiconductor Device
A semiconductor device includes: a p-type semiconductor layer; an n-type semiconductor layer; a first electrode layer; a second electrode layer; and a control...
US-9,391,149 Semiconductor device with self-charging field electrodes
A semiconductor device includes a drift region of a first doping type, a junction between the drift region and a device region, and a field electrode structure...
US-9,391,148 SiC single crystal substrate
A single crystal SiC substrate capable of forming a good epitaxial thin film thereon to give a high-quality epitaxial substrate is provided. The single crystal...
US-9,391,147 Substrate arrangement
A substrate arrangement comprising a substrate having a surface configured to receive, by epitaxy, an epitaxial layer of semiconducting material, the substrate...
US-9,391,146 Oxide semiconductor
To provide an oxide semiconductor with a novel structure. Such an oxide semiconductor is composed of an aggregation of a plurality of InGaZnO.sub.4 crystals...
US-9,391,145 Nitride semiconductor element and nitride semiconductor wafer
According to one embodiment, a nitride semiconductor element includes a functional layer and a stacked body. The stacked body includes a GaN intermediate layer,...
US-9,391,144 Selective gallium nitride regrowth on (100) silicon
A semiconductor structure including a (100) silicon substrate having a plurality openings located within the silicon substrate, wherein each opening exposes a...
US-9,391,143 Method for low temperature bonding and bonded structure
A method for bonding at low or room temperature includes steps of surface cleaning and activation by cleaning or etching. The method may also include removing...
US-9,391,142 Semiconductor device
A semiconductor device of this embodiment includes: a first semiconductor layer including Al.sub.XGa.sub.1-XN; a second semiconductor layer provided above the...
US-9,391,141 Method for producing fin structures of a semiconductor device in a substrate
A method for producing fin structures, using Directed Self Assembly (DSA) lithographic patterning, in an area of a semiconductor substrate includes providing a...
US-9,391,140 Raised fin structures and methods of fabrication
A method of fabricating raised fin structures is provided, the fabricating including: providing a substrate and at least one dielectric layer over the...
US-9,391,139 Top-side contact structure and fabrication method thereof
A top-side contact structure is provided. The top-side contact structure includes a substrate. The substrate includes a first semiconductor layer, an insulating...
US-9,391,138 Semiconductor devices including empty spaces and methods of forming the same
Semiconductor devices including empty spaces and methods of forming the semiconductor devices are provided. The semiconductor devices may include first and...
US-9,391,137 Power semiconductor device and method of fabricating the same
Provided are a power semiconductor device and method of fabricating the same, in particular a power semiconductor device such as an Insulated Gate Bipolar...
US-9,391,136 Semiconductor device
A semiconductor device includes an n-type semiconductor substrate, which has a main surface having an element region and an outer peripheral region surrounding...
US-9,391,135 Semiconductor device
In one embodiment, an IGBT is formed to include a plurality of termination trenches in a termination region of the IGBT. An embodiment may include that one end...
US-9,391,134 Fin field effect transistor, semiconductor device including the same and method of forming the semiconductor device
A fin field effect transistor includes a first fin structure and a second fin structures both protruding from a substrate, first and second gate electrodes on...
US-9,391,133 Capacitor and preparation method thereof
A capacitor and a method of fabricating thereof are provided. A structure of low pressure tetraethyl orthosilicate--low pressure silicon nitride--low pressure...
US-9,391,132 Light emitting device
An electro-optical device for performing time division gray scale display and which is capable of arbitrarily setting the amount of time during which light is...
US-9,391,131 Organic light emitting display device and method of manufacturing the same
Provided are an organic light emitting display device and a method of manufacturing the same. The organic light emitting display device includes: an emission...
US-9,391,130 Organic light emitting display device and method for manufacturing the same
Disclosed are an organic light emitting display device and a manufacturing method. The organic light emitting display device includes: a data line arranged in a...
US-9,391,129 Display device
A display device comprising including a plurality of pixels arranged in the shape of a matrix above a substrate, and a plurality of thin film transistors...
US-9,391,128 Light emitting device and electronic device
Color purity of a light emitting element is improved without an adverse effect such as reduction in voltage and luminance efficiency. The light emitting element...
US-9,391,127 Display device for controlling light transmittance
A display device that can control light transmittance is disclosed. One aspect is a display device for controlling light transmittance. The display device...
US-9,391,126 Flat panel display and method of manufacturing the same
A flat panel display is disclosed. In one embodiment, the display includes a first substrate and an organic light emitting device formed over the first...
US-9,391,125 Organic light emitting diode display including dummy circuit portions
An organic light emitting diode display includes a substrate having a display unit and a peripheral portion, scan lines in a first direction, data lines in a...
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