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Patent # Description
US-9,391,124 Organic light emitting diode display
An organic light emitting diode (OLED) display includes a substrate, a thin film transistor disposed on the substrate, a first electrode disposed on the thin...
US-9,391,123 Organic light emitting diode display
An OLED display includes pixels, each including a first light emission region having a first area and a first perimeter and a second light emission region...
US-9,391,122 Organic EL display device
In an organic EL display device, a resistance of a cathode electrode of OLEDs is substantially reduced while maintaining a higher opening ratio of pixels as an...
US-9,391,121 Organic light-emitting diode (OLED) display
An organic light-emitting diode (OLED) display is disclosed. In one aspect, the OLED display includes red, green, and blue pixels. Each pixel includes a pixel...
US-9,391,120 Semiconductor memory device having unequal pitch vertical channel transistors used as selection transistors
A semiconductor device comprises a set of selection transistors, such as in a three-dimensional memory structure or stack having resistance change memory cells...
US-9,391,119 Non-volatile random access memory devices with shared transistor configuration and methods of forming the same
Embodiments of non-volatile random access memory (RAM) devices and methods of forming the same are provided herein. In an embodiment, a non-volatile RAM device...
US-9,391,118 Fault tolerant light emitters, systems incorporating fault tolerant light emitters and methods of fabricating...
There is provided a light emitter comprising light emitting devices (for example, light emitting diodes) which are electrically interconnected to provide an...
US-9,391,117 Light emitting diode package
One embodiment comprises first and second light-emitting chips, each comprising: a package body having a cavity; first to fourth lead frames disposed inside the...
US-9,391,116 Imaging apparatus, imaging system and manufacturing method of imaging apparatus
A junction type field effect transistor (JFET) in a substrate includes channel and source regions of a first conductivity type and first through fourth gate...
US-9,391,115 CMOS image sensor unit and method for fabricating the same
A CMOS image sensor unit and a method for fabricating the same are described. The image sensor unit includes a photodiode, a transfer gate, a reset gate, a...
US-9,391,114 Semiconductor devices, methods of manufacturing thereof, and image sensor devices
Semiconductor devices, methods of manufacturing thereof, and image sensor devices are disclosed. In some embodiments, a semiconductor device includes a...
US-9,391,113 Image-sensor device structure and method of manufacturing
Embodiments of an image-sensor device structure and a method of manufacturing thereof are provided. The image-sensor device structure includes a semiconductor...
US-9,391,112 Semiconductor apparatus
A semiconductor apparatus includes a conductive member penetrating through a first semiconductor layer, a first insulator layer, and a third insulator layer,...
US-9,391,111 Stacked integrated circuit system with thinned intermediate semiconductor die
An intermediate integrated circuit die of a stacked integrated circuit system includes an intermediate semiconductor substrate including first polarity dopants...
US-9,391,110 Wafer on wafer stack method of forming and method of using the same
A wafer on wafer (WOW) stack includes a first wafer having dies of a first type. The WOW stack further includes a second wafer bonded to the first wafer. The...
US-9,391,109 Uniform-size bonding patterns
A semiconductor device, and a method of fabrication, is introduced. In an embodiment, one or more passivation layers are formed over a first substrate. Recesses...
US-9,391,108 Photoelectric conversion apparatus and imaging system using the photoelectric conversion apparatus
In a photoelectric conversion apparatus including a charge holding portion, a part of an element isolation region contacting with a semiconductor region...
US-9,391,107 Image sensor
An image sensor device includes a substrate having an active array region and a peripheral circuit region, a plurality of light-sensing elements disposed within...
US-9,391,106 Solid-state imaging apparatus
A solid-state imaging apparatus includes: a solid-state imaging device photoelectrically converting light taken by a lens; and a light shielding member...
US-9,391,105 Solid-state imaging device and imaging apparatus
A solid-state imaging device includes: unit pixels each having a light-receiving element which is divided into line widths shorter than or equal to a wavelength...
US-9,391,104 Single-plate color imaging element including color filters arranged on pixels
A color imaging element including color filters arranged on pixels, wherein the color filter array includes a basic array pattern including first filters...
US-9,391,103 Image pickup element and image pickup device
An image pickup element includes: a photoelectric conversion film provided on a semiconductor substrate and including a chalcopyrite-based compound; an...
US-9,391,102 Imaging device
An imaging device includes pixels each of which includes a photoelectric converter including a p-n junction formed of a first semiconductor region and a second...
US-9,391,101 Image sensor pickup region layout
Embodiments of the present disclosure include an image sensor device and methods of forming the same. An embodiment is an image sensor device including a first...
US-9,391,100 Display substrate and fabricating method thereof, mask plate, and mask plate group
The present disclosure provides a display substrate and a mask plate, the display substrate comprising a plurality of sub display substrates, each of the sub...
US-9,391,099 Array substrate and liquid crystal display module including TFT having improved mobility and method of...
An array substrate for a liquid crystal display device includes a gate line and a gate electrode on a substrate, the gate electrode connected to the gate line;...
US-9,391,098 Method of manufacturing a display device
An object of the present invention is to improve yield when manufacturing a display device. A method of manufacturing a display device for displaying an image...
US-9,391,097 Thin film transistor, array substrate and method of manufacturing the same and display device
According to embodiments of the present invention, there are provided a thin film transistor, an array substrate and method of manufacturing the same, and a...
US-9,391,096 Semiconductor device and method for manufacturing the same
To provide a highly reliable semiconductor device. The semiconductor device includes a first oxide layer over an insulating film; an oxide semiconductor layer...
US-9,391,095 Semiconductor device and manufacturing method thereof
An oxide semiconductor layer with excellent crystallinity is formed to enable manufacture of transistors with excellent electrical characteristics for practical...
US-9,391,094 Thin-film ambipolar logic
An ambipolar electronic device is disclosed. The device may include a field-effect transistor (FET), which may have a handle substrate layer, two contacts and...
US-9,391,092 Circuit structures, memory circuitry, and methods
A circuit structure includes a substrate having an array region and a peripheral region. The substrate in the array and peripheral regions includes insulator...
US-9,391,091 MOSFET with work function adjusted metal backgate
An SOI substrate, a semiconductor device, and a method of backgate work function tuning. The substrate and the device have a plurality of metal backgate regions...
US-9,391,090 Integrated circuit device including polycrystalline semiconductor film and method of manufacturing the same
An IC device includes a polycrystalline silicon thin film interposed between a first level semiconductor circuit and a second level semiconductor circuit which...
US-9,391,089 Method of manufacturing semiconductor device including nickel-containing film
A method of manufacturing a semiconductor device is provided. A substrate including a structure in which a hole is formed is prepared. Precursors including a...
US-9,391,088 Nonvolatile memory device
The nonvolatile memory device includes a plurality of memory cells being stacked in a direction perpendicular to a substrate. A string select transistor is...
US-9,391,087 Nonvolatile semiconductor memory device
A nonvolatile semiconductor memory device includes first and second word line groups, each including a plurality of stacked word lines above a substrate, a...
US-9,391,086 Nonvolatile semiconductor memory device and method of manufacturing nonvolatile semiconductor memory device
According to one embodiment, a nonvolatile semiconductor memory device includes a stacked body in which a spacer film and an electrode film are alternately...
US-9,391,085 Self-aligned split gate flash memory having liner-separated spacers above the memory gate
Some embodiments of the present disclosure relate to a split gate memory cell which includes a select gate and a memory gate. The select gate has a planar upper...
US-9,391,084 Bandgap-engineered memory with multiple charge trapping layers storing charge
A memory cell includes a gate, a channel material having a channel surface and a channel valence band edge, and a dielectric stack between the gate and the...
US-9,391,083 Nonvolatile memory structure
A nonvolatile memory structure included a P substrate, an N well in the P substrate, and a PMOS storage transistor. The PMOS storage transistor includes a...
US-9,391,082 Memory arrays with a memory cell adjacent to a smaller size of a pillar having a greater channel length than a...
The disclosure is related to memory arrays and methods. One such memory array has a substantially vertical pillar. A memory cell adjacent to the pillar where...
US-9,391,081 Metal indentation to increase inter-metal breakdown voltage
A first depression and a second depression are formed in an upper surface of a first metal layer. A dielectric layer is formed over the first metal layer....
US-9,391,080 Memory bit cell for reduced layout area
An approach for providing SRAM bit cells with miniaturized bit cells, without local interconnection layers, with improved lithographic printability, and...
US-9,391,079 Compact semiconductor memory device having reduced number of contacts, methods of operating and methods of making
An integrated circuit including a link or string of semiconductor memory cells, wherein each memory cell includes a floating body region for storing data. The...
US-9,391,078 Method and structure for finFET devices
A semiconductor device and a method of forming the same are disclosed. The device comprises a semiconductor substrate comprised of a first semiconductor...
US-9,391,077 SiGe and Si FinFET structures and methods for making the same
FinFET structures and methods for making the same. A method includes: creating a plurality of Silicon fins on a first region of a substrate, creating a...
US-9,391,076 CMOS structures and processes based on selective thinning
Methods for fabricating semiconductor devices and devices therefrom are provided. A method includes providing a substrate having a semiconducting surface with...
US-9,391,075 Integrated circuit and method for fabricating the same having a replacement gate structure
An integrated circuit includes a first FET structure and a second FET structure, both of which being formed over a silicon substrate. The first FET structure...
US-9,391,074 Structure for FinFET fins
A design structure for fins in a fin array that can be included in a fin field effect transistor (FinFET), the design structure including: a semiconductor fin...
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