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Method of producing an optoelectronic semiconductor chip
A method of producing an optoelectronic semiconductor chip includes growing an optoelectronic semiconductor layer sequence on a growth substrate, forming an...
Electric conductive heat dissipation substrate
An electric conduction heat dissipation substrate includes a ceramic substrate, and a seed layer, and a buffering material layer and a copper circuit layer...
Light emitting device package, backlight unit, lighting device and its
Provided are a light emitting device package, a backlight unit, a lighting device and its manufacturing method. The light emitting device package may include a...
LED packages and manufacturing method thereof
A method of manufacturing LED packages includes the steps of: forming a conductive circuit layer on a substrate; screen printing a wall layer on the conductive...
Light emitting device and resin composition
Provided a light emitting device comprising: a package; a light emitting element disposed in the package; an encapsulation member that covers the light...
Aggregation of semiconductor devices and the method thereof
A method of manufacturing an aggregation of semiconductor devices comprising the steps of providing a first layer; sequentially addressing and adhering a...
Light emitting device package
Embodiments disclose a light emitting device package including an insulating layer, a first lead frame and a second lead frame disposed on the insulating layer...
Optoelectronic devices containing a converter carrier layer, and methods
of producing an optoelectronic device...
An optoelectronic device includes a layer sequence having an active layer that emits electromagnetic primary radiation, and at least one converter carrier layer...
Phosphor and light emitting device
A phosphor and a light emitting device are provided. The phosphor comprises a composition having a formula of ...
UV- and heat-resistant optoelectronic semiconductor component
An optoelectronic semiconductor component includes a connection carrier with at least two connection points and a carrier top that in a main side of the...
Semiconductor light emitting device and method of manufacturing the same
A semiconductor light emitting device that achieves miniaturization and high brightness is provided. The semiconductor light emitting device has a light...
Light emitting diode for surface mount technology, method of manufacturing
the same, and method of...
Provided are a light emitting diode (LED) in which a conductive barrier layer surrounding a reflective metal layer is defined by a protective insulating layer,...
Optoelectronic semiconductor component and method for producing a mirror
region on a semiconductor body
A method for manufacturing an optoelectronic semiconductor component and an optoelectronic semiconductor component are disclosed. In an embodiment the component...
Semiconductor light emitting element with conductive layer having outer
edge positioned inside outer edge of...
A semiconductor light emitting element of an embodiment includes a laminated body having first, second, and third semiconductor layers stacked on each other in...
Lateral semiconductor light emitting diodes having large area contacts
Light emitting diodes include a diode region having first and second opposing faces that include therein an n-type layer and a p-type layer, an anode contact...
Layered conductive phosphor electrode for vertical LED and method for
In a method for forming a phosphor-converted LED, an array of vertical LEDs is printed over a conductive surface of a substrate such that a bottom electrode of...
Light emitting diode chip having electrode pad
Disclosed herein in an LED chip including electrode pads. The LED chip includes a semiconductor stack including a first conductive type semiconductor layer, a...
A light-emitting diode is provided. The light-emitting diode includes an N-type semiconductor layer, a light-emitting layer and a P-type semiconductor layer. A...
Optoelectronic semiconductor chip and method for the production thereof
An optoelectronic semiconductor chip (1) is herein described which comprises a non-planar growth layer (2), which contains at least one first nitride compound...
Light emitting device and light emitting apparatus having the same
A light emitting device is provided a transmissive substrate; a first pattern portion including a protrusions; a second pattern portion including a concaves...
Patterned layer design for group III nitride layer growth
A device having a layer with a patterned surface for improving the growth of semiconductor layers, such as group III nitride-based semiconductor layers with a...
Light emitting device
A light emitting device includes a substrate, a plurality of light emitting cells disposed on the substrate to be spaced apart from each other, and a connection...
Semiconductor structures having active regions comprising InGaN, methods
of forming such semiconductor...
Semiconductor structures include an active region between a plurality of layers of InGaN. The active region may be at least substantially comprised by InGaN....
Light emitting device
The disclosed light emitting device includes an intermediate layer interposed between the light emitting semiconductor structure and the substrate. The light...
Light-emitting diode structure having progressive work function layer
The present invention relates to an LED structure having a progressive work function layer, which adopts a conversion layer with a gradually varying work...
Semiconductor device and manufacturing method of the same
An object is to provide a semiconductor device with high aperture ratio or a manufacturing method thereof. Another object is to provide semiconductor device...
Superluminescent diode and method for implementing the same
A superluminescent diode and a method for implementing the same, wherein the method includes growing a first epi layer on top of an SI (semi-insulating...
Light emitting diode and manufacturing method therefor
Disclosed are a light emitting diode having an n-doped ohm contact buffer layer and a manufacturing method therefor. In the present invention, a highly n-doped...
Shingled solar cell module
A high efficiency configuration for a solar cell module comprises solar cells arranged in a shingled manner to form super cells, which may be arranged to...
Integrated micro-inverter and thin film solar module and manufacturing
Embodiments of the present invention include a method for manufacturing, and a structure for a thin film solar module. The method of manufacturing includes...
Releasing apparatus for separating a semiconductor substrate from a
According to one embodiment, a releasing apparatus for separating a semiconductor substrate from a semiconductor template, the releasing apparatus having an...
Photodetector capable of detecting long wavelength radiation
Apparatuses capable of and techniques for detecting long wavelength radiation are provided.
Silicon solar cell
A solar cell includes a first electrode; a lower light absorption layer disposed on the first electrode; an upper light absorption layer disposed on the lower...
Sealing film for solar battery
Provided is a sealing film for a solar battery which has excellent light resistance and heat resistance by preventing yellowing due to the influence of light or...
Monolithic integration of heterojunction solar cells
A method for fabricating a device with integrated photovoltaic cells includes supporting a semiconductor substrate on a first handle substrate and doping the...
Photoelectric conversion device and manufacturing method thereof
A photoelectric conversion device having a new anti-reflection structure is provided. A photoelectric conversion device includes a first-conductivity-type...
CdHgTe photodiodes array
A photodiodes array includes a useful layer made of Cd.sub.xHg.sub.1-xTe; first doped zones each forming a PN junction with a second doped zone surrounding the...
Ge--Si avalanche photodiode with silicon carrier-energy-relaxation layer
and edge electric field buffer region
Various embodiments of a germanium-on-silicon (Ge--Si) avalanche photodiode are provided. In one aspect, the Ge--Si avalanche photodiode utilizes a silicon...
Silicon substrate having textured surface, and process for producing same
The present invention addresses the problem of providing a novel silicon substrate having a textured surface by dry-etching the surface of a silicon substrate...
Metal-insulator-semiconductor devices based on surface plasmon polaritons
Apparatus and techniques are presented such as can be used for electro-optic modulation and detection or other applications. For example, an optical metal...
Corrosion resistant solar mirror
A reflective article includes a transparent substrate having a first major surface and a second major surface. A base coat is formed over at least a portion of...
Insitu epitaxial deposition of front and back junctions in single crystal
silicon solar cells
Fabrication of a single crystal silicon solar cell with an insitu epitaxially deposited very highly doped p-type silicon back surface field obviates the need...
Method of etching a semiconductor layer of a photovoltaic device
A method and apparatus provide for a roughened back surface of a semiconductor absorber layer of a photovoltaic device to improve adhesion. The roughened back...
Broadband graphene-based optical limiter for the protection of backside
illuminated CMOS detectors
An optical device may include a sacrificial limiter filter including at least one layer of graphene disposed on a substrate. The at least one layer of graphene...
Optical semiconductor device having pre-molded leadframe with window and
A semiconductor device is made by providing a semiconductor die having an optically active area, providing a leadframe or pre-molded laminated substrate having...
Photovoltaic string combiner with disconnect having provision for
converting between grounded and ungrounded...
A string combiner is provided for coupling multiple strings of series-connected photovoltaic (PV) panels in a PV array to downstream equipment, each string...
A pumping capacitor is provided. The pumping capacitor includes a substrate, a P-type gate layer on the substrate, and a gate dielectric layer between the...
High voltage deep trench capacitor
A semiconductor process and apparatus provide a high voltage deep trench capacitor structure (10) that is integrated in an integrated circuit, alone or in...
Nitride semiconductor epitaxial substrate and nitride semiconductor device
There is provided a nitride semiconductor epitaxial substrate having a group III nitride semiconductor layer with C-plane as a surface, grown on a substrate via...
Semiconductor device having depletion region for improving breakdown
A semiconductor device having a wide depletion region for increasing the breakdown voltage of the device includes an epitaxial layer of a first conductive type....