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Patent # Description
US-9,397,280 Method of producing an optoelectronic semiconductor chip
A method of producing an optoelectronic semiconductor chip includes growing an optoelectronic semiconductor layer sequence on a growth substrate, forming an...
US-9,397,279 Electric conductive heat dissipation substrate
An electric conduction heat dissipation substrate includes a ceramic substrate, and a seed layer, and a buffering material layer and a copper circuit layer...
US-9,397,278 Light emitting device package, backlight unit, lighting device and its manufacturing method
Provided are a light emitting device package, a backlight unit, a lighting device and its manufacturing method. The light emitting device package may include a...
US-9,397,277 LED packages and manufacturing method thereof
A method of manufacturing LED packages includes the steps of: forming a conductive circuit layer on a substrate; screen printing a wall layer on the conductive...
US-9,397,276 Light emitting device and resin composition
Provided a light emitting device comprising: a package; a light emitting element disposed in the package; an encapsulation member that covers the light...
US-9,397,275 Aggregation of semiconductor devices and the method thereof
A method of manufacturing an aggregation of semiconductor devices comprising the steps of providing a first layer; sequentially addressing and adhering a...
US-9,397,274 Light emitting device package
Embodiments disclose a light emitting device package including an insulating layer, a first lead frame and a second lead frame disposed on the insulating layer...
US-9,397,273 Optoelectronic devices containing a converter carrier layer, and methods of producing an optoelectronic device...
An optoelectronic device includes a layer sequence having an active layer that emits electromagnetic primary radiation, and at least one converter carrier layer...
US-9,397,272 Phosphor and light emitting device
A phosphor and a light emitting device are provided. The phosphor comprises a composition having a formula of ...
US-9,397,271 UV- and heat-resistant optoelectronic semiconductor component
An optoelectronic semiconductor component includes a connection carrier with at least two connection points and a carrier top that in a main side of the...
US-9,397,270 Semiconductor light emitting device and method of manufacturing the same
A semiconductor light emitting device that achieves miniaturization and high brightness is provided. The semiconductor light emitting device has a light...
US-9,397,269 Light emitting diode for surface mount technology, method of manufacturing the same, and method of...
Provided are a light emitting diode (LED) in which a conductive barrier layer surrounding a reflective metal layer is defined by a protective insulating layer,...
US-9,397,268 Optoelectronic semiconductor component and method for producing a mirror region on a semiconductor body
A method for manufacturing an optoelectronic semiconductor component and an optoelectronic semiconductor component are disclosed. In an embodiment the component...
US-9,397,267 Semiconductor light emitting element with conductive layer having outer edge positioned inside outer edge of...
A semiconductor light emitting element of an embodiment includes a laminated body having first, second, and third semiconductor layers stacked on each other in...
US-9,397,266 Lateral semiconductor light emitting diodes having large area contacts
Light emitting diodes include a diode region having first and second opposing faces that include therein an n-type layer and a p-type layer, an anode contact...
US-9,397,265 Layered conductive phosphor electrode for vertical LED and method for forming same
In a method for forming a phosphor-converted LED, an array of vertical LEDs is printed over a conductive surface of a substrate such that a bottom electrode of...
US-9,397,264 Light emitting diode chip having electrode pad
Disclosed herein in an LED chip including electrode pads. The LED chip includes a semiconductor stack including a first conductive type semiconductor layer, a...
US-9,397,263 Light-emitting diodes
A light-emitting diode is provided. The light-emitting diode includes an N-type semiconductor layer, a light-emitting layer and a P-type semiconductor layer. A...
US-9,397,262 Optoelectronic semiconductor chip and method for the production thereof
An optoelectronic semiconductor chip (1) is herein described which comprises a non-planar growth layer (2), which contains at least one first nitride compound...
US-9,397,261 Light emitting device and light emitting apparatus having the same
A light emitting device is provided a transmissive substrate; a first pattern portion including a protrusions; a second pattern portion including a concaves...
US-9,397,260 Patterned layer design for group III nitride layer growth
A device having a layer with a patterned surface for improving the growth of semiconductor layers, such as group III nitride-based semiconductor layers with a...
US-9,397,259 Light emitting device
A light emitting device includes a substrate, a plurality of light emitting cells disposed on the substrate to be spaced apart from each other, and a connection...
US-9,397,258 Semiconductor structures having active regions comprising InGaN, methods of forming such semiconductor...
Semiconductor structures include an active region between a plurality of layers of InGaN. The active region may be at least substantially comprised by InGaN....
US-9,397,257 Light emitting device
The disclosed light emitting device includes an intermediate layer interposed between the light emitting semiconductor structure and the substrate. The light...
US-9,397,256 Light-emitting diode structure having progressive work function layer
The present invention relates to an LED structure having a progressive work function layer, which adopts a conversion layer with a gradually varying work...
US-9,397,255 Semiconductor device and manufacturing method of the same
An object is to provide a semiconductor device with high aperture ratio or a manufacturing method thereof. Another object is to provide semiconductor device...
US-9,397,254 Superluminescent diode and method for implementing the same
A superluminescent diode and a method for implementing the same, wherein the method includes growing a first epi layer on top of an SI (semi-insulating...
US-9,397,253 Light emitting diode and manufacturing method therefor
Disclosed are a light emitting diode having an n-doped ohm contact buffer layer and a manufacturing method therefor. In the present invention, a highly n-doped...
US-9,397,252 Shingled solar cell module
A high efficiency configuration for a solar cell module comprises solar cells arranged in a shingled manner to form super cells, which may be arranged to...
US-9,397,251 Integrated micro-inverter and thin film solar module and manufacturing process
Embodiments of the present invention include a method for manufacturing, and a structure for a thin film solar module. The method of manufacturing includes...
US-9,397,250 Releasing apparatus for separating a semiconductor substrate from a semiconductor template
According to one embodiment, a releasing apparatus for separating a semiconductor substrate from a semiconductor template, the releasing apparatus having an...
US-9,397,249 Photodetector capable of detecting long wavelength radiation
Apparatuses capable of and techniques for detecting long wavelength radiation are provided.
US-9,397,248 Silicon solar cell
A solar cell includes a first electrode; a lower light absorption layer disposed on the first electrode; an upper light absorption layer disposed on the lower...
US-9,397,247 Sealing film for solar battery
Provided is a sealing film for a solar battery which has excellent light resistance and heat resistance by preventing yellowing due to the influence of light or...
US-9,397,246 Monolithic integration of heterojunction solar cells
A method for fabricating a device with integrated photovoltaic cells includes supporting a semiconductor substrate on a first handle substrate and doping the...
US-9,397,245 Photoelectric conversion device and manufacturing method thereof
A photoelectric conversion device having a new anti-reflection structure is provided. A photoelectric conversion device includes a first-conductivity-type...
US-9,397,244 CdHgTe photodiodes array
A photodiodes array includes a useful layer made of Cd.sub.xHg.sub.1-xTe; first doped zones each forming a PN junction with a second doped zone surrounding the...
US-9,397,243 Ge--Si avalanche photodiode with silicon carrier-energy-relaxation layer and edge electric field buffer region
Various embodiments of a germanium-on-silicon (Ge--Si) avalanche photodiode are provided. In one aspect, the Ge--Si avalanche photodiode utilizes a silicon...
US-9,397,242 Silicon substrate having textured surface, and process for producing same
The present invention addresses the problem of providing a novel silicon substrate having a textured surface by dry-etching the surface of a silicon substrate...
US-9,397,241 Metal-insulator-semiconductor devices based on surface plasmon polaritons
Apparatus and techniques are presented such as can be used for electro-optic modulation and detection or other applications. For example, an optical metal...
US-9,397,240 Corrosion resistant solar mirror
A reflective article includes a transparent substrate having a first major surface and a second major surface. A base coat is formed over at least a portion of...
US-9,397,239 Insitu epitaxial deposition of front and back junctions in single crystal silicon solar cells
Fabrication of a single crystal silicon solar cell with an insitu epitaxially deposited very highly doped p-type silicon back surface field obviates the need...
US-9,397,238 Method of etching a semiconductor layer of a photovoltaic device
A method and apparatus provide for a roughened back surface of a semiconductor absorber layer of a photovoltaic device to improve adhesion. The roughened back...
US-9,397,237 Broadband graphene-based optical limiter for the protection of backside illuminated CMOS detectors
An optical device may include a sacrificial limiter filter including at least one layer of graphene disposed on a substrate. The at least one layer of graphene...
US-9,397,236 Optical semiconductor device having pre-molded leadframe with window and method therefor
A semiconductor device is made by providing a semiconductor die having an optically active area, providing a leadframe or pre-molded laminated substrate having...
US-9,397,235 Photovoltaic string combiner with disconnect having provision for converting between grounded and ungrounded...
A string combiner is provided for coupling multiple strings of series-connected photovoltaic (PV) panels in a PV array to downstream equipment, each string...
US-9,397,234 Pumping capacitor
A pumping capacitor is provided. The pumping capacitor includes a substrate, a P-type gate layer on the substrate, and a gate dielectric layer between the...
US-9,397,233 High voltage deep trench capacitor
A semiconductor process and apparatus provide a high voltage deep trench capacitor structure (10) that is integrated in an integrated circuit, alone or in...
US-9,397,232 Nitride semiconductor epitaxial substrate and nitride semiconductor device
There is provided a nitride semiconductor epitaxial substrate having a group III nitride semiconductor layer with C-plane as a surface, grown on a substrate via...
US-9,397,231 Semiconductor device having depletion region for improving breakdown voltage characteristics
A semiconductor device having a wide depletion region for increasing the breakdown voltage of the device includes an epitaxial layer of a first conductive type....
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