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Patent # Description
US-9,396,978 Substrate processing apparatus, substrate processing method and storage medium
A substrate processing apparatus can efficiently perform a trial operation in conditions close to those of an actual operation. In the substrate processing...
US-9,396,977 Moisture and/or electrically conductive remains detection for wafers after rinse / dry process
A method, device, and apparatus is provided for detecting moisture and/or electrically conductive remains on a wafer after the wafer is removed from a drying...
US-9,396,976 Cutting apparatus
Cutting apparatus includes first and second cutting units that are provided on one outside surface of a guide rail unit and are movable on first Y-axis guide...
US-9,396,975 Liquid treatment apparatus and method
A liquid treatment apparatus includes a substrate retaining unit, a rotational driving unit configured to rotate the substrate retaining unit; and a nozzle...
US-9,396,974 Substrate processing apparatus and substrate processing method
A substrate processing apparatus includes a substrate holding unit that horizontally holds a substrate in non-contact with a major surface of the substrate, a...
US-9,396,973 Methods and apparatus for wafer level packaging
A semiconductor device includes a substrate, a bond pad above the substrate, a guard ring above the substrate, and an alignment mark above the substrate,...
US-9,396,972 Micro-assembly with planarized embedded microelectronic dies
An IC assembly includes multiple microelectronic dies embedded in a substrate material using capillary forces such that the contact surface of each...
US-9,396,971 Semiconductor device and a manufacturing method thereof
There is provided a technology enabling the improvement of the reliability of a semiconductor device manufactured by physically fixing separately formed chip...
US-9,396,970 Method for electrochemically manufacturing CuSCN nanowires
A method for forming, on a conductive or semiconductor substrate, nanowires based on CuSCN, including the steps of: preparing an aqueous electrolytic solution...
US-9,396,969 Glasswork component, manufacturing method thereof, and manufacturing method of electronic device
A manufacturing method of a glasswork component, includes: forming a compressive stress layer which ranges from one main surface to the other main surface of a...
US-9,396,968 Etching method and etching apparatus
An etching method is provided that includes the steps of supplying an etching gas containing a fluorocarbon (CF) based gas into a processing chamber, generating...
US-9,396,967 Method of producing epitaxial silicon wafer, epitaxial silicon wafer, and method of producing solid-state image...
Provided is an epitaxial silicon wafer free of epitaxial defects caused by dislocation clusters and COPs with reduced metal contamination achieved by higher...
US-9,396,966 Patterning method and semiconductor structure
A patterning method and a patterned material layer are provided. After providing a substrate including a material layer, a hard mask layer including trenches...
US-9,396,965 Techniques and apparatus for anisotropic metal etching
In one embodiment, a method for etching a metal layer on a substrate may include providing a hydrogen-containing gas and an impurity gas to a plasma chamber;...
US-9,396,964 Plasma processing apparatus, plasma processing method, and non-transitory computer-readable medium
A plasma processing apparatus includes: a process chamber which accommodates a substrate to be processed; a lower electrode disposed in the process chamber; an...
US-9,396,963 Mask removal process strategy for vertical NAND device
A method for removing a doped amorphous carbon mask from a semiconductor substrate is disclosed. The method comprises generating a plasma to be used in treating...
US-9,396,962 Etching method
An etching method can etch a region formed of silicon oxide. The etching method includes an exposing process (process (a)) of exposing a target object including...
US-9,396,961 Integrated etch/clean for dielectric etch applications
The embodiments herein relate to methods and apparatus for etching a recessed feature in dielectric material. In various embodiments, a recessed feature is...
US-9,396,960 Plasma processing method and plasma processing apparatus
A main etching process of forming a recess portion in a multilayer film having a laminated film where a first film and a second film having different relative...
US-9,396,959 Semiconductor device with stop layers and fabrication method using ceria slurry
The present invention provides a method of fabricating a semiconductor device including forming stop layers (32) that include silicon oxy-nitride films above a...
US-9,396,958 Self-aligned patterning using directed self-assembly of block copolymers
Techniques herein provide methods for self-aligned etching that use existing features for patterning or registering a pattern, without damaging existing...
US-9,396,957 Non-lithographic line pattern formation
A metal layer is deposited over an underlying material layer. The metal layer includes an elemental metal that can be converted into a dielectric ...
US-9,396,956 Method of plasma-enhanced atomic layer etching
A method for etching a layer on a substrate includes at least one etching cycle, wherein an etching cycle includes: continuously providing an inert gas into the...
US-9,396,955 Plasma tuning rods in microwave resonator processing systems
A plasma tuning rod system is provided with one or more microwave cavities configured to couple electromagnetic (EM) energy in a desired EM wave mode to a...
US-9,396,954 Method and apparatus for manufacturing three-dimensional-structure memory device
Provided is a method of manufacturing a memory device having a 3-dimensional structure, which includes alternately stacking one or more dielectric layers and...
US-9,396,953 Conformity control for metal gate stack
A method includes forming a dummy gate stack over a semiconductor substrate, wherein the semiconductor substrate is comprised in a wafer. The method further...
US-9,396,952 Methods of forming transistor gates
Some embodiments include methods of forming charge storage transistor gates and standard FET gates in which common processing is utilized for fabrication of at...
US-9,396,951 System and method for mitigating oxide growth in a gate dielectric
Oxide growth of a gate dielectric layer that occurs between processes used in the fabrication of a gate dielectric structure can be reduced. The reduction in...
US-9,396,950 Low thermal budget schemes in semiconductor device fabrication
In aspects of the present invention, a method of forming a semiconductor device is disclosed, wherein amorphous regions are formed at an early stage during...
US-9,396,949 Method of adjusting a threshold voltage of a multi-gate structure device
The present invention discloses a method of adjusting a threshold voltage of a multi-gate structure device, wherein, preparing the multi-gate structure device...
US-9,396,948 Layer transfer of silicon onto III-nitride material for heterogenous integration
An integrated silicon and III-N semiconductor device may be formed by growing III-N semiconductor material on a first silicon substrate having a first...
US-9,396,947 Wafer structure for electronic integrated circuit manufacturing
A bonded wafer structure having a handle wafer, a device wafer, and an interface region with an abrupt transition between the conductivity profile of the device...
US-9,396,946 Wet chemistry processes for fabricating a semiconductor device with increased channel mobility
Embodiments of a semiconductor device having increased channel mobility and methods of manufacturing thereof are disclosed. In one embodiment, the semiconductor...
US-9,396,945 Method for producing SiC substrate
A method that includes at least a CMP step of subjecting both a Si surface (1a) and a C surface (1b) of an SiC substrate (1) to double-sided polishing using a...
US-9,396,944 Method and apparatus for forming a straight line projection on a semiconductor substrate
An apparatus for irradiating a semiconductor is disclosed. The apparatus has a curved mirror with a reflective surface of revolution, and a point source...
US-9,396,943 Method for the reuse of gallium nitride epitaxial substrates
A method for the reuse of gallium nitride (GaN) epitaxial substrates uses band-gap-selective photoelectrochemical (PEC) etching to remove one or more epitaxial...
US-9,396,942 Substrate and manufacturing method thereof, and semiconductor device
A substrate includes a base substrate including a processed portion processed by irradiation with an ultrashort-pulse laser light and an unprocessed portion...
US-9,396,941 Method for vertical and lateral control of III-N polarity
Disclosed herein is a method of: depositing a patterned mask layer on an N-polar GaN epitaxial layer of a sapphire, silicon, or silicon carbide substrate;...
US-9,396,940 Thin film semiconductors made through low temperature process
Embodiments disclosed herein relate to a TFT and methods for manufacture thereof. Specifically, the embodiments herein relate to methods for forming a...
US-9,396,939 Semiconductor device
An insulating layer containing a silicon peroxide radical is used as an insulating layer in contact with an oxide semiconductor layer for forming a channel....
US-9,396,937 P-type oxide composition, and method for producing P-type oxide composition
To provide an oxide composition, represented by: ZnO.sub.1-xS.sub.x+.alpha. (0<x.ltoreq.0.5, .alpha.>0), where part of O sites of ZnO is substituted with...
US-9,396,936 Method for growing aluminum indium nitride films on silicon substrate
A method for growing aluminum indium nitride (AlInN) films on silicon substrates comprises several steps: firstly, arranging a silicon substrate in a reaction...
US-9,396,935 Method of fabricating ultra-thin inorganic semiconductor film and method of fabricating three-dimensional...
Provided are methods of manufacturing an ultra-thin inorganic semiconductor film and methods of manufacturing three-dimensional (3D) semiconductor device using...
US-9,396,934 Methods of forming films including germanium tin and structures and devices including the films
Methods of forming germanium-tin films using germane as a precursor are disclosed. Exemplary methods include growing films including germanium and tin in an...
US-9,396,933 PVD buffer layers for LED fabrication
Fabrication of gallium nitride-based light devices with physical vapor deposition (PVD)-formed aluminum nitride buffer layers is described. Process conditions...
US-9,396,932 Method of fabricating crystalline island on substrate
Certain electronic applications, such as OLED display back panels, require small islands of high-quality semiconductor material distributed over a large area....
US-9,396,931 Method of forming fins from different materials on a substrate
A method of forming fins of different materials includes providing a substrate with a layer of a first material having a top surface, masking a first portion of...
US-9,396,930 Substrate processing apparatus
A substrate processing apparatus in which an improved film quality is obtained is disclosed. A precursor gas supply process of supplying a precursor gas to a...
US-9,396,929 Method of manufacturing a semiconductor device, substrate processing apparatus and recording medium
Provided are: forming a thin film made of a specific element alone on a substrate by performing a specific number of times a cycle of: supplying a first source...
US-9,396,928 Method for fabricating semiconductor device
A method for fabricating a semiconductor device includes: forming a first film on a nitride semiconductor layer so as to contact the nitride semiconductor layer...
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