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Patent # Description
US-9,401,432 Semiconductor device and electronic device
A semiconductor device of one embodiment of the present invention includes a semiconductor, an insulator, a first conductor, and a second conductor. In the...
US-9,401,431 Double self-aligned metal oxide TFT
A method of fabricating metal oxide TFTs on transparent substrates includes the steps of positioning an opaque gate metal area on the front surface of the...
US-9,401,430 VTFT with a top-gate structure
An electronic device includes a vertical-support-element on a substrate. The vertical-support-element extends away from the substrate and includes a first edge...
US-9,401,429 Semiconductor structure and process thereof
A semiconductor structure includes a fin-shaped structure and a gate. The fin-shaped structure is located in a substrate, wherein the fin-shaped structure has a...
US-9,401,428 Semiconductor devices including gate pattern, multi-channel active pattern and diffusion layer
A semiconductor device includes a gate pattern on a substrate, a multi-channel active pattern under the gate pattern to cross the gate pattern and having a...
US-9,401,427 Semiconductor device and fabrication method thereof
A semiconductor device includes a gate electrode formed on a silicon substrate via a gate insulation film in correspondence to a channel region, source and...
US-9,401,426 Semiconductor device and fabrication method thereof
A semiconductor device includes a gate stack, an isolation structure and a strained feature. The gate stack is over a substrate. The isolation structure is in...
US-9,401,425 Semiconductor structure and method for manufacturing the same
A semiconductor structure is disclosed. The semiconductor structure comprises: a substrate (130), a support structure (131), a base region (100), a gate stack,...
US-9,401,424 High performance stress-enhanced MOSFETs using Si:C and SiGe epitaxial source/drain and method of manufacture
Methods of forming a semiconductor device are provided. A method of forming a semiconductor device may include forming a stressing layer on a substrate. The...
US-9,401,423 Enhancing transistor performance and reliability by incorporating deuterium into a strained capping layer
When forming transistors with deuterium enhanced gate dielectrics and strained channel regions, the manufacturing processes of strain-inducing dielectric...
US-9,401,422 Trench DMOS device with reduced gate resistance and manufacturing method thereof
A trench-type DMOS device includes a substrate as a public drain region, an active region and a voltage-dividing ring formed on the substrate, and a first...
US-9,401,421 Switching device
A switching device provided herewith includes first to fourth semiconductor layers and a gate electrode. The second semiconductor layer is of a first conductive...
US-9,401,420 Semiconductor device
Semiconductor device including: silicon-based substrate; first buffer layer on silicon-based substrate and is formed of first layer containing Al composition...
US-9,401,419 Spin transport device
A spin transport device includes a semiconductor layer 3, a first ferromagnetic layer 1 provided on the semiconductor layer 3 via a first tunnel barrier layer...
US-9,401,418 Method of manufacturing thin film transistor and organic light emitting diode display
A method of manufacturing transistor having a first and second thin film transistor by creating the second thin film transistor by forming a second gate of the...
US-9,401,417 Method of manufacturing a semiconductor device
A method of manufacturing a semiconductor device includes forming an epitaxial layer within a source/drain region of a semiconductor substrate, forming a...
US-9,401,416 Method for reducing gate height variation due to overlapping masks
A method includes forming at least one fin in a semiconductor substrate. A placeholder gate structure is formed above the fin. The placeholder gate structure...
US-9,401,415 Fin field effect transistor (FinFET) device and method for forming the same
Embodiments for forming a fin field effect transistor (FinFET) device structure are provided. The FinFET device structure includes a fin structure extending...
US-9,401,414 Semiconductor device and method of forming the same
A method of forming a semiconductor device includes forming a NMOS gate structure over a substrate. The method further includes forming an amorphized region in...
US-9,401,413 Semiconductor device
The semiconductor device has a barrier layer formed on a channel layer, an n type diffusion preventing layer formed on the barrier layer and containing...
US-9,401,412 Methods of fabricating diodes with multiple junctions
An embodiment of a method of fabricating a diode having a plurality of regions of a first conductivity type and a buried region of a second conductivity type...
US-9,401,411 SiC semiconductor device and method for manufacturing the same
In some aspects of the invention, a layer containing titanium and nickel is formed on an SiC substrate. A nickel silicide layer containing titanium carbide can...
US-9,401,410 Poly sandwich for deep trench fill
A semiconductor device is formed by forming a deep trench in a substrate and a dielectric liner on sidewalls of the deep trench. A first undoped polysilicon...
US-9,401,409 High density MOSFET array with self-aligned contacts enhancement plug and method
A semiconductor substrate comprises epitaxial region, body region and source region; an array of interdigitated active nitride-capped trench gate stacks...
US-9,401,408 Confined early epitaxy with local interconnect capability
A non-planar semiconductor structure includes a semiconductor substrate, multiple raised semiconductor structures coupled to the substrate and surrounded at a...
US-9,401,407 Transistor
An object is to provide a transistor having a novel electrode structure capable of substantially maintaining on-state current while parasitic capacitance...
US-9,401,405 Semiconductor device and method of manufacturing the same
A semiconductor device includes a silicon substrate, an initial buffer layer disposed on the silicon substrate and including aluminum nitride (AlN), and a...
US-9,401,404 Semiconductor device and fabrication method
A semiconductor device is disclosed comprising: a substrate having a surface comprising germanium; a layer of gallium on said surface; and a layer of gallium...
US-9,401,403 Nitride semiconductor structure
A nitride semiconductor structure of the present disclosure comprises a semiconductor substrate, and a layer formed over the semiconductor substrate and...
US-9,401,402 Nitride semiconductor device and nitride semiconductor substrate
An object of the present invention is to provide a nitride semiconductor device and a nitride semiconductor substrate in each of which a nitride semiconductor...
US-9,401,401 Semiconductor device
There are provided a semiconductor device and a method of manufacturing the same. The semiconductor device includes a source region disposed apart from a drain...
US-9,401,400 Single electron transistor device
A transistor device is provided that includes a gate electrode disposed between source and drain electrodes and overlying a quantum dot structure realized by a...
US-9,401,399 Semiconductor device
A semiconductor device includes a transistor formed in a semiconductor substrate including a main surface. The transistor includes a source region, a drain...
US-9,401,398 Semiconductor device including transistor
According to one embodiment, a semiconductor device includes: a first region including: a first semiconductor layer; a first semiconductor region; a second...
US-9,401,397 Reduction of defect induced leakage in III-V semiconductor devices
A semiconductor device includes a semiconductor substrate and a p-doped layer formed on the substrate having a dislocation density exceeding 10.sup.8 cm.sup.-2....
US-9,401,396 Method for manufacturing semiconductor device and plasma oxidation treatment method
Provided is a method for manufacturing a semiconductor device, in which a degradation of characteristics of a thin film transistor can be suppressed by...
US-9,401,395 Decoupling MIM capacitor designs for interposers and methods of manufacture thereof
Decoupling metal-insulator-metal (MIM) capacitor designs for interposers and methods of manufacture thereof are disclosed. In one embodiment, a method of...
US-9,401,394 Method of manufacturing display apparatus
A display apparatus includes a plurality of pixels, a signal transmission line, a pad and a buffer. The pixels display an image. The signal transmission line is...
US-9,401,393 Organic light-emitting display device and method of manufacturing the same
An organic light-emitting display device includes a thin film transistor (TFT) including an active layer, a gate electrode, a source electrode, and a drain...
US-9,401,392 Organic light emitting display device and fabricating method thereof
Disclosed is an organic light emitting display device. The organic light emitting display device includes: at least one transistor arranged in a transistor...
US-9,401,391 Organic light-emitting diode (OLED) display and fabrication method for the same
An organic light-emitting diode (OLED) display and fabrication method for the same are disclosed. In one aspect, the OLED display includes a first substrate...
US-9,401,390 Array substrate, method for fabricating the same, and OLED display device
This invention provides an array substrate, a method for fabricating the same, and an OLED display device, which can solve the technical problem that the...
US-9,401,389 Display panel and method of manufacturing the same
A display panel and a method of manufacturing the same are disclosed. In one aspect, the display panel comprises a first substrate, a switching element formed...
US-9,401,388 Photo electric converter, imaging system, and method for manufacturing photoelectric converter
A method for manufacturing a photoelectric converter includes a first step of preparing a semiconductor substrate including a metal oxide semiconductor (MOS)...
US-9,401,387 Method for operating an organic optoelectronic component
A method is specified for operating an organic optoelectronic component, which has at least one organic light-emitting element having an organic functional...
US-9,401,386 Semiconductor memory device
A semiconductor memory device includes a semiconductor substrate including a plane portion expanding in a first direction and a second direction perpendicular...
US-9,401,385 Semiconductor memory device
The inventive concepts provide a semiconductor memory device including variable resistance memory elements. The semiconductor memory device may include a first...
US-9,401,384 Method of preparing self-aligned isolation regions between sensor elements
A method of preparing self-aligned isolation regions between two neighboring sensor elements on a substrate includes patterning an oxide layer to form an...
US-9,401,383 Photoconductive element for radiation detection in a radiography imaging system
This disclosure is directed at a photoconductive element for a digital X-ray imaging system which consists of a detector element comprising a semiconducting...
US-9,401,382 Image sensor and manufacturing method thereof
Provided are an image sensor and a method of manufacturing method of manufacturing the image sensor. The image sensor includes a substrate, photoelectric...
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