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Patent # Description
US-9,406,520 Method of manufacturing semiconductor device, method of processing substrate, substrate processing apparatus...
A method of manufacturing a semiconductor device, includes: alternately performing (i) a first step of alternately supplying a first raw material containing a...
US-9,406,519 Memory device structure and method
A system and method for manufacturing a memory device is provided. A preferred embodiment comprises manufacturing a flash memory device with a tunneling layer....
US-9,406,518 (110) surface orientation for reducing fermi-level-pinning between high-K dielectric and group III-V compound...
A device with improved device performance, and method of manufacturing the same, are disclosed. An exemplary device includes a group III-V compound...
US-9,406,517 SiGe surface passivation by germanium cap
The present disclosure relates to a transistor device having a germanium cap layer that is able to provide for a low interface trap density, while meeting...
US-9,406,516 High-K metal gate process for lowering junction leakage and interface traps in NMOS transistor
A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate; forming an interfacial layer on the...
US-9,406,515 Laser annealing device including tunable mask and method of using the same
A laser annealing device for compensating wafer heat maps and its method are disclosed. A laser annealing device comprises a pump laser source array including...
US-9,406,514 Group III nitride semiconductor light-emitting device and production method therefor
The present invention provides a Group III nitride semiconductor light-emitting device having a low drive voltage and a production method therefor. A p-type...
US-9,406,513 Graphene laminate with band gap
A graphene laminate includes a first piezoelectric material layer having a negatively-charged surface and a positively-charged surface, a first graphene layer...
US-9,406,512 Self-aligned via patterning with multi-colored photobuckets for back end of line (BEOL) interconnects
Self-aligned via patterning with multi-colored photobuckets for back end of line (BEOL) interconnects is described. In an example, an interconnect structure for...
US-9,406,511 Self-aligned double patterning
A semiconductor device and a method of forming the same are provided. An embodiment comprises a target layer and masking layers over the target layer. First...
US-9,406,510 Pattern forming method and article manufacturing method
Provided is a method for forming a pattern on a layer on a substrate. The method includes forming a line-and-space pattern on the layer; coating a resist on the...
US-9,406,509 Deposition of heteroatom-doped carbon films
Easily removable heteroatom-doped carbon-containing layers are deposited. The carbon-containing layers may be used as hardmasks. The heteroatom-doped...
US-9,406,508 Methods of forming a semiconductor layer including germanium with low defectivity
Methods of forming a semiconductor layer including germanium with low defectivity are provided. The methods may include sequentially forming a silicate glass...
US-9,406,507 Utilization of angled trench for effective aspect ratio trapping of defects in strain relaxed heteroepitaxy of...
Embodiments of the present disclosure relate to reducing dislocation density in a heteroepitaxial growth film and devices including heteroepitaxial films with...
US-9,406,506 Lattice matched aspect ratio trapping to reduce defects in III-V layer directly grown on silicon
A structure having application to electronic devices includes a III-V layer having high crystal quality and a low defect density on a lattice mismatched...
US-9,406,505 Nitride semiconductor component and process for its production
A process for the production of a layer structure of a nitride semiconductor component on a silicon surface, comprising: provision of a substrate having a...
US-9,406,504 Reaction chamber including a susceptor having draining openings for manufacturing a silicon carbide wafer
An embodiment described herein includes a method for producing a wafer of a first semiconductor material. Said first semiconductor material has a first melting...
US-9,406,503 Decreasing the critical dimensions in integrated circuits
A method for lithographic patterning of a substrate is described. The method comprises obtaining a substrate to be patterned. It further comprises subsequently...
US-9,406,502 Apparatus including 4-way valve for fabricating semiconductor device, method of controlling valve, and method...
An apparatus and method for fabricating a semiconductor device using a 4-way valve with improved purge efficiency by improving a gas valve system by preventing...
US-9,406,501 Apparatus and method for cleaning substrate
Provided are an apparatus and a method of cleaning a substrate. The apparatus includes a substrate supporting unit supporting a substrate, a container...
US-9,406,500 Flux residue cleaning system and method
A flux residue cleaning system includes first and second immersion chambers, first and second spray chambers, and a drying chamber. The first immersion chamber...
US-9,406,499 Semiconductor wafer structure
A semiconductor structure includes a wafer including a first surface and a periphery, a plurality of protrusions protruded from the first surface and a...
US-9,406,498 High efficiency lighting assembly
A lighting assembly (100) includes an electronic driver circuit (110) and a discharge lamp (10). The discharge lamp (10) is driven with a steady-state average...
US-9,406,497 High intensity discharge lamp
The invention describes a high intensity gas-discharge lamp comprising a discharge vessel (5, 5') enclosing a fill gas in a discharge chamber (2) and comprising...
US-9,406,496 Method and system for improving characteristic peak signals in analytical electron microscopy
A method and system are disclosed for improving characteristic peak signals in electron energy loss spectroscopy (EELS) and energy dispersive x-ray spectroscopy...
US-9,406,495 Linear ion beam bonding apparatus and array structure thereof
A linear ion beam bonding apparatus and an array structure thereof, comprising a pair of primary radiofrequency electrodes (501 and 502) extending along the...
US-9,406,494 Spatially correlated dynamic focusing
A Time of Flight mass analyzer is disclosed comprising one or more acceleration electrodes and a first device arranged and adapted to apply a DC voltage pulse...
US-9,406,493 Electrostatic mass spectrometer with encoded frequent pulses
A method, apparatus and algorithms are disclosed for operating an open electrostatic trap (E-trap) or a multi-pass TOF mass spectrometer with an extended flight...
US-9,406,492 Electrospray ionization interface to high pressure mass spectrometry and related methods
An electrospray ionization (ESI)-mass spectrometer analysis systems include an ESI device with at least one emitter configured to electrospray ions and a mass...
US-9,406,491 Multiple ionization sources for a mass spectrometer
Systems and methods for a mass spectrometer include an atmospheric-pressure chemical ionization (APCI) source, one or more low-pressure chemical ionization...
US-9,406,490 Determination of metal and metalloid concentrations using ICPMS
A system for determining an analyte by inductively coupled plasma mass spectrometry (ICPMS) includes a sample introduction device having a heated cyclonic spray...
US-9,406,489 Investigating chemical-based events that occur in vehicles
A method and apparatus for investigating a chemical-based event inside a vehicle without significant delay. A number of samples of air are collected at a number...
US-9,406,488 Enhanced photoelectron sources using electron bombardment
A method of achieving heightened quantum efficiencies and extended photocathode lifetimes is provided that includes using an electron beam bombardment to...
US-9,406,487 Plasma enhanced chemical vapor deposition (PECVD) source
One embodiment is directed to a plasma source comprising a body in which a cavity is formed and at least two self-contained magnetron assemblies disposed within...
US-9,406,485 Argon and helium plasma apparatus and methods
An argon and helium plasma apparatus and method are disclosed that operate with argon or helium at atmospheric pressure, and at low temperatures, and with high...
US-9,406,484 Specimen holder for holding a semiconductor device during a sample preparation procedure carried out using...
A specimen holder is configured to hold, during a sample preparation procedure carried out using first and second sample preparation apparatuses, a...
US-9,406,483 Method and device for characterizing an electron beam using an X-ray detector with a patterned aperture...
A device for detecting X-rays radiated out of a substrate surface, said device comprising at least one X-ray detector, a resolver grating and a modulator...
US-9,406,482 Charged-particle microscope with Raman spectroscopy capability
A charged-particle microscope with Raman spectroscopy capability and a method for examining a sample using a combined charged-particle microscope and Raman...
US-9,406,481 Transmission electron microscope micro-grid
A transmission electron microscope micro-grid includes a carbon nanotube layer sandwiched between a first metal layer and a second metal layer. The carbon...
US-9,406,480 Testing apparatus using charged particles and device manufacturing method using the testing apparatus
A substrate is irradiated by primary electrons and secondary electrons generated from the substrate are detected by a detector. A reference die is placed on the...
US-9,406,479 Mirror pulse compressor for electron beam apparatus
One embodiment pertains to an apparatus for compressing an electron pulse. An electron source is illuminated by a pulsed laser and generates a pulse of...
US-9,406,478 Method and apparatus for inducing chemical reactions by X-ray irradiation
A method for inducing chemical reactions using X-ray radiation comprises generating an irradiation volume within the interior of a reaction vessel by...
US-9,406,477 Traveling wave tube loaded by a material having negative permittivity and positive permeability
A slow wave structure of a traveling wave tube is provided. The slow wave structure includes an input port, an output port, a first material, and a second...
US-9,406,476 Combination of materials for mercury-dispensing devices and devices containing said combination of materials
An improved mercury-dispensing combination of materials is made up of a compound A including mercury and a second metal selected among titanium, zirconium and...
US-9,406,475 Multi-pole switch-fuse arrangement for busbar systems
The present invention relates to a multi-pole switch-fuse arrangement having at least two switch-fuse units into which one fuse link each can be inserted. The...
US-9,406,474 Circuit breaker heaters and translational magnetic systems
A thermal-magnetic trip unit is provided for a circuit breaker. The thermal-magnetic trip unit includes a heater and a translational magnetic system coupled to...
US-9,406,473 Circuit breaker terminal shield
A circuit breaker includes: a main body housing circuit-breaking parts; a terminal portion exposed outside the main body; a lug-type terminal block attached to...
US-9,406,472 Planar cavity MEMS and related structures, methods of manufacture and design structures
Planar cavity Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structure are provided. The method includes forming at least...
US-9,406,471 Reed with hinge for reed switch
A reed for a reed switch and a reed switch are provided. The reed may include a first portion having a first thickness and a first length, a second portion...
US-9,406,470 Tri-stable flexure mechanism
Embodiments of a tri-stable flexure mechanism are described where a resilient component is present that serves as both a structural component in the kinematic...
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