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Patent # Description
US-9,419,221 Method of fabricating semiconductor integrated circuit having phase-change layer
A method of fabricating a semiconductor integrated circuit that includes forming a lower electrode in a semiconductor substrate, forming an interlayer...
US-9,419,220 Resistive memory elements, resistive memory cells, and resistive memory devices
A method of forming a resistive memory element comprises forming an oxide material over a first electrode. The oxide material is exposed to a plasma process to...
US-9,419,219 Resistive RAM devices and methods
The present disclosure includes a high density resistive random access memory (RRAM) device, as well as methods of fabricating a high density RRAM device. One...
US-9,419,218 Resistance variable memory structure and method of forming the same
A memory structure includes a first dielectric layer, having a first top surface, over a conductive structure. A first opening in the first dielectric layer...
US-9,419,217 Vertical cross-point memory arrays
A method of manufacturing a memory structure includes forming a plurality of vertically-stacked horizontal line layers, interleaving a plurality of electrically...
US-9,419,216 Phase change memory cell and phase change memory
A phase change memory cell includes a carbon nanotube layer, a phase change layer, a first electrode, a second electrode, and a third electrode. At least part...
US-9,419,215 Cross-point memory cells, non-volatile memory arrays, methods of reading a memory cell, methods of programming...
Cross-point memory cells, non-volatile memory arrays, methods of reading a memory cell, methods of programming a memory cell, and methods of writing to and...
US-9,419,214 Target, method for producing the same, memory, and method for producing the same
A target including: at least one refractory metal element selected from the group consisting of Ti, Zr, Hf, V, Nb, Ta, and lanthanoids; at least one element...
US-9,419,213 Directly heated RF phase change switch
An RF switch is provided with a direct heating method. The RF switch is comprised of two RF electrodes disposed on opposing sides of a phase change element....
US-9,419,212 Barrier film techniques and configurations for phase-change memory elements
Embodiments of the present disclosure describe barrier film techniques and configurations for phase-change memory elements. In an embodiment, an apparatus...
US-9,419,211 Etching method and substrate processing apparatus
A gas for an etching process and a treatment process of a metal stacked film in which an insulating layer is interposed between two layers of magnetic materials...
US-9,419,210 Spin-transfer torque magnetic random access memory with perpendicular magnetic anisotropy multilayers
The present invention is directed to a spin transfer torque magnetic random access memory (STTMRAM) element comprising a composite free layer including one or...
US-9,419,209 Magnetic and electrical control of engineered materials
Methods, systems, and devices are disclosed for controlling the magnetic and electrical properties of materials. In one aspect, a multi-layer structure includes...
US-9,419,208 Magnetoresistive memory element and method of fabricating same
A magnetoresistive memory element (e.g., a spin-torque magnetoresistive memory element) includes a fixed magnetic layer, a free magnetic layer having...
US-9,419,207 Magnetic random access memory with multilayered seed structure
The present invention is directed to a magnetic random access memory element that includes a multilayered seed structure formed by interleaving a first type...
US-9,419,206 Magnetic sensor and method of fabricating the same
Provided are a magnetic sensor and a method of fabricating the same. The magnetic sensor includes: hall elements disposed in a substrate, a protection layer...
US-9,419,205 Methods for manufacturing carbon ribbons for magnetic devices
In one embodiment of the invention, there is provided a method for manufacturing a magnetic memory device, comprising: depositing a carbon layer comprising...
US-9,419,204 Piezoelectric material
A lead-free piezoelectric material that does not undergo depolarization in a wide operating temperature range and has a good piezoelectric constant is provided....
US-9,419,203 Passivation and alignment of piezoelectronic transistor piezoresistor
A method of forming a piezoelectronic transistor (PET) device, the PET device, and a semiconductor including the PET device are described. The method includes...
US-9,419,202 Ultrasound transducer and method for manufacturing an ultrasound transducer
An ultrasound transducer includes an acoustic layer having a front side and an opposite back side. The acoustic layer is configured to convert electrical...
US-9,419,201 Integrating a piezoresistive element in a piezoelectronic transistor
A semiconductor device, a piezoelectronic transistor (PET) device, and a method of fabricating the PET device are described. The method includes forming a first...
US-9,419,200 Piezoelectric actuator and recording head
There is provided a piezoelectric actuator configured to displace to project toward a pressure chamber to apply pressure to a liquid inside the pressure...
US-9,419,199 Actuator, actuator system, and control of an actuator
The invention relates to an actuator (1), comprising: piezoelectric elements (16) arranged in a stack; first and second inner electrodes (5, 3), which are...
US-9,419,198 Nanomesh phononic structures for low thermal conductivity and thermoelectric energy conversion materials
A nanomesh phononic structure includes: a sheet including a first material, the sheet having a plurality of phononic-sized features spaced apart at a phononic...
US-9,419,197 Thermoelectric material and method of preparing the thermoelectric material
A method of preparing thermoelectric material particles, the method comprising: disposing a first electrode and a second electrode in a dielectric liquid...
US-9,419,196 Oxide nanoparticle-dispersed, chalcogenide-based, and phase-separated composite thermoelectric material
Provided is a thermoelectric material containing: a matrix containing a Group 13 element of chalcogenide; and oxide nanoparticles dispersed into the matrix to...
US-9,419,195 Light emitting diode (LED) die having strap layer and method of fabrication
A light emitting diode (LED) die includes a first-type semiconductor layer, a multiple quantum well (MQW) layer in electrical contact with the first-type...
US-9,419,194 Transparent electron blocking hole transporting layer
A light emitting diode includes an active region configured to emit light, a composite electrical contact layer, and a transparent electron blocking hole...
US-9,419,193 Optoelectronic component and method for producing an opto-electronic component
An opto-electronic component has a carrier element (3) with a connection region (5). Arranged on the carrier element (3) is a semiconductor chip (7). A contact...
US-9,419,192 Composite resin and electronic device
According to one embodiment, a composite resin includes a resin component; and a plurality of first powder bodies dispersed in the resin component. Each of the...
US-9,419,190 Potted optoelectronic module having a plurality of semiconductor components and method for producing an...
An optoelectronic semiconductor component comprising: a main body (100) having a recess; (102), a first optoelectronic element (104) and a second optoelectronic...
US-9,419,189 Small LED source with high brightness and high efficiency
Small LED sources with high brightness and high efficiency apparatus including the small LED sources and methods of using the small LED sources are disclosed.
US-9,419,188 LED luminous structure for backlight source
Disclosed is an LED luminous structure for backlight source with good light emitting efficiency and color light rendering and capable of preventing oxidation or...
US-9,419,187 Light emitting device and method of manufacturing thereof
A light emitting device includes a package having side walls which define a recess, a light emitting element arranged in the recess, and a sealing member which...
US-9,419,186 Light emitting diode chip having wavelength converting layer and method of fabricating the same, and package...
An exemplary embodiment of the present invention discloses a light-emitting diode (LED) chip including a semiconductor stacked structure including a first...
US-9,419,185 Method of singulating LED wafer substrates into dice with LED device with Bragg reflector
A method of dicing semiconductor devices from a substrate includes forming a Bragg reflector over a bottom side of the substrate, where the bottom side is...
US-9,419,184 Light-emitting device, light-emitting device package, and light unit
A light-emitting device, according to one embodiment, comprises: a light-emitting structure comprising a first conductive semiconductor layer, an active layer...
US-9,419,183 Nanowire sized opto-electronic structure and method for manufacturing the same
An opto-electric structure includes a plurality of nano elements arranged side by side on a support layer, where each nano element includes at least a first...
US-9,419,182 Solid-state radiation transducer devices having at least partially transparent buried-contact elements, and...
Solid-state radiation transducer (SSRT) devices having buried contacts that are at least partially transparent and associated systems and methods are disclosed...
US-9,419,181 Electrode, an electronic device, and a method for manufacturing an optoelectronic device
According to various embodiments, an electrode may include at least one layer including a chemical compound including aluminum and titanium.
US-9,419,180 Light emitting diode having electrode pads
A substrate, a first conductive type semiconductor layer arranged on the substrate, a second conductive type semiconductor layer arranged on the first...
US-9,419,179 Diode for a printable composition
An exemplary printable composition of a liquid or gel suspension of diodes comprises a plurality of diodes, a first solvent and/or a viscosity modifier. An...
US-9,419,178 Light-emitting device, light-emitting device package, and light unit
A light-emitting device, according to one embodiment, comprises: a transparent conductive oxide film; an active layer which comes into contact with a lower...
US-9,419,177 Compositions, devices and methods for optimizing photosynthetically active radiation
Compositions, devices, and methods for optimizing photosynthetically active radiation by utilizing a composition comprising a quantum confinement material...
US-9,419,176 Three-dimensional light-emitting device and fabrication method thereof
A three-dimensional (3D) light-emitting device may include a plurality of 3D light-emitting structures formed apart from one another, each 3D light-emitting...
US-9,419,175 Semiconductor light emitting device
According to one embodiment, a semiconductor light emitting device includes: a first semiconductor layer of a first conductivity type; a second semiconductor...
US-9,419,174 Transparent quantum dot light-emitting diodes with dielectric/metal/dielectric electrode
Quantum dot light emitting diodes (QD-LEDs) are formed that are transparent and emit light from the top and bottom faces. At least one electrode of the QD-LEDs...
US-9,419,173 Flip-chip LED and fabrication method thereof
A flip-chip LED and a method for forming the LED are disclosed. The method includes: providing a substrate and depositing on the substrate an epitaxial layer...
US-9,419,172 Method of manufacturing light emitting device package
A method of manufacturing a light emitting device package includes forming a plurality of light emitting devices by growing a plurality of semiconductor layers...
US-9,419,171 Two-part screen printing for solar collection grid
Methods and apparatus relating to providing a collection grid suitable for use in PV modules. The disclosed collection grid may be at least partially applied to...
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