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Controlling the stoichiometry and doping of semiconductor materials
Methods for treating a semiconductor material are provided. According to an aspect of the invention, the method includes annealing the semiconductor material in...
Method for producing a semiconductor element of a direct-converting x-ray
A production method of a semiconductor element of a direct-converting x-ray detector is disclosed, wherein at least one intermediate layer is applied to a...
Method of manufacturing a solar cell by texturing a principal surface
using an alkaline solution
A method of manufacturing a solar cell including a crystalline semiconductor substrate, includes: etching or washing at least part of a first principal surface...
Making semiconductor bodies from molten material using a free-standing
An interposer sheet can be used for making semiconductor bodies, such as of silicon, such as for solar cell use. It is free-standing, very thin, flexible,...
Etching processes for solar cell fabrication
A method of fabricating a solar cell can include forming a first dopant region over a silicon substrate and an oxide region over the first dopant region. In an...
Laser processing for high-efficiency thin crystalline silicon solar cell
A method for making a back contact solar cell. Base isolation regions are formed in a crystalline silicon back contact solar cell substrate having a substrate...
Solar cell module having interconnector and method of fabricating the same
A solar cell module having an interconnector and a method of fabricating the same are disclosed. The solar cell module includes a plurality of solar cells and...
Solar panel and method for manufacturing the same
A solar panel capable of exhibiting excellent aesthetics and power generation efficiency, and capable of easily forming a protection plate in a manufacturing...
Array sensor apparatus and forming method thereof
An array sensor apparatus and forming method thereof, wherein the array sensor comprises: a driving circuit and a sensor circuit, wherein the driving circuit...
Hybrid multi-spectrum photosensitive pixel group, photosensitive device,
and photosensitive system
The present invention relates to a mixed multi-spectrum light-sensing pixel group, a light-sensing device, and a light-sensing system. The mixed multi-spectrum...
Nitride semiconductor structure
A nitride semiconductor structure is provided. The nitride semiconductor structure includes a substrate, a SiC nucleation layer, a composite buffer layer and a...
Semiconductor light-detecting element
Prepared is an n.sup.- type semiconductor substrate 1 having a first principal surface 1a and a second principal surface 1b opposed to each other, and having a...
Solar cell and method for manufacturing same
The invention provides a solar cell and a method for manufacturing same. The solar cell contains a carbon structure layer; a microstructure formed on the carbon...
Solid-state imaging device, manufacturing method and designing method
thereof, and electronic device
A solid-state imaging device including pixel photododes on a light-receiving surface of a substrate; a first insulating film on the substrate covering a...
Package and method for integration of heterogeneous integrated circuits
A package for holding a plurality of heterogeneous integrated circuits includes a first chip having a first conductive pad and a first substrate including a...
Sensing product and method of making
This description relates to a sensing product formed using a substrate with a plurality of epi-layers. At least a first epi-layer has a different composition...
Interdigitated electrode formation
The disclosed technology generally relates to photovoltaic devices and methods of fabricating photovoltaic devices, and more particularly relates to...
Process for manufacturing a solar cell and solar cell
A solar cell segment includes a substrate defining a rear side including a number of base doped regions and emitter doped regions. A dielectric layer and at...
Carbon electrode, carbon electrode production method, and photoelectric
A carbon electrode of an embodiment includes: a graphene having a graphene skeleton, carbon atoms in the graphene skeleton being partially substituted by a...
High-reflectivity back contact for photovoltaic devices such as
copper--indium-diselenide solar cells
A photovoltaic device (e.g., solar cell) includes: a front substrate (e.g., glass substrate); a semiconductor absorber film; a back contact including a first...
For a photosensor, an array substrate is provided, wherein the edge of a photodiode is enclosed by the opening edge of a contact hole formed on a drain electrode.
Solar cell sheet and heat treatment process thereof
Provided are a solar cell sheet and a heat treatment process thereof. The heat treatment process includes: a) sifting from solar cell sheets after printed and...
Diode with insulated anode regions
A diode is integrated on a semiconductor chip having anode and cathode surfaces opposite to each other. The diode comprises a cathode region extending inwardly...
Electronically controlled squishable composite switch
A method and apparatus for making analog and digital electronics which includes a composite including a squishable material doped with conductive particles. A...
Semiconductor device and method for manufacturing the same
A region containing a high proportion of crystal components and a region containing a high proportion of amorphous components are formed separately in one oxide...
To give favorable electrical characteristics to a semiconductor device. The semiconductor device includes an insulating layer, a semiconductor layer over the...
Semiconductor device and manufacturing method thereof
A semiconductor device with a structure in which an increase in the number of oxygen vacancies in an oxide semiconductor layer can be suppressed and a method...
Method for manufacturing semiconductor device
A method for manufacturing a semiconductor device includes: forming a photocatalytic layer and an organic compound layer in contact with the photocatalytic...
The present disclosure relates to a device and method for strain inducing or high mobility channel replacement in a semiconductor device. The semiconductor...
Two-dimensional condensation for uniaxially strained semiconductor fins
Techniques are disclosed for enabling multi-sided condensation of semiconductor fins. The techniques can be employed, for instance, in fabricating fin-based...
Nitride layer protection between PFET source/drain regions and dummy gate
during source/drain etch
Methods of using a nitride to protect source/drain regions during dummy gate removal and the resulting devices are disclosed. Embodiments include forming an...
Embedded carbon-doped germanium as stressor for germanium nFET devices
Carbon-doped germanium stressor regions are formed in an nFET device region of a germanium substrate and at a footprint of a functional gate structure. The...
Stress memorization film and oxide isolation in fins
A method of straining fins of a FinFET device by using a stress memorization film and the resulting device are provided. Embodiments include providing a...
Dislocation stress memorization technique (DSMT) on epitaxial channel
The present disclosure relates to a transistor device having epitaxial source and drain regions with dislocation stress memorization (DSM) regions that provide...
Three dimensional NAND device having reduced wafer bowing and method of
A monolithic three dimensional NAND string includes a plurality of control gate electrodes extending substantially parallel to a major surface of a substrate,...
Strain enhancement for FinFETs
An integrated circuit device includes a substrate having a first portion in a first device region and a second portion in a second device region. A first...
Semiconductor device and fabrication method of semiconductor device
P.sup.+ type regions and a p-type region are selectively disposed in a surface layer of a silicon carbide substrate base. The P.sup.+ type region is disposed in...
A semiconductor device can ensure predetermined current capacity under maintaining breakdown voltage characteristics and can promote size reduction. A first...
Semiconductor device having vertical channel transistor and method for
fabricating the same
A semiconductor device having a substrate; a plurality of pillar structures, wherein each pillar structure includes an active pillar disposed over the...
Semiconductor device and integrated circuit
A semiconductor device in a semiconductor substrate includes a first drain region and a second drain region, a first drift zone and a second drift zone, at...
Split gate semiconductor device with curved gate oxide profile
A split gate semiconductor device includes a trench gate having a first electrode region and a second electrode region that are separated from each other by a...
Bidirectional trench FET with gate-based resurf
A device includes a semiconductor substrate having a surface, a trench in the semiconductor substrate extending vertically from the surface, a body region...
Semiconductor device including switching devices in an epitaxial layer
A semiconductor device includes switching devices in an epitaxial layer on a silicon substrate. Diffusion regions of different conductivity types are provided....
Integrated circuits and methods for fabricating integrated circuits with
active area protection
Integrated circuits and methods for fabricating integrated circuits are provided. In an embodiment, a semiconductor substrate includes a shallow trench...
Doped barrier layers in epitaxial group III nitrides
A semiconductor structure having a Group III-N buffer layer and a Group III-N barrier layer in direct contact to form a junction between the Group III-V buffer...
Insulating gate AlGaN/GaN HEMT
AlGaN/GaN HEMTs are disclosed having a thin AlGaN layer to reduce trapping and also having additional layers to reduce gate leakage and increase the maximum...
Field effect power electronic device and method for fabricating the same
In a method for fabricating a field effect power electronic device, an epi layer is formed on a substrate defined by a device isolation area and a device...
Etch-based fabrication process for stepped field-plate wide-bandgap
A method of making a stepped field gate for an FET including forming a first set of layers having a passivation layer on a barrier layer of the FET and a first...
Semiconductor device with multiple carrier channels
A semiconductor device includes a layered structure forming multiple carrier channels extending in parallel at different depths of the semiconductor device and...
Multichannel devices with improved performance
A transistor device is provided that comprises a base structure, and a superlattice structure overlying the base structure and comprising a multichannel ridge...