Easy To Use Patents Search & Patent Lawyer Directory

At Patents you can conduct a Patent Search, File a Patent Application, find a Patent Attorney, or search available technology through our Patent Exchange. Patents are available using simple keyword or date criteria. If you are looking to hire a patent attorney, you've come to the right place. Protect your idea and hire a patent lawyer.

Searching:





Search by keyword, patent number, inventor, assignee, city or state:




Patent # Description
US-9,418,867 Mask passivation using plasma
A gas comprising hydrogen is supplied to a plasma source. Plasma comprising hydrogen plasma particles is generated from the gas. A passivation layer is...
US-9,418,866 Gas treatment method
A gas processing method is described. A workpiece is mounted on a platform in a chamber on which a silicon oxide film is formed on a surface of the workpiece;...
US-9,418,865 Wet etching of silicon containing antireflective coatings
Provided are methods for processing semiconductor substrates or, more specifically, etching silicon containing antireflective coatings (SiARCs) from the...
US-9,418,864 Method of forming a non volatile memory device using wet etching
In one embodiment, a method of forming a semiconductor device is disclosed. A high-k dielectric is deposited of over a semiconductor body, and a portion of the...
US-9,418,863 Method for etching etching target layer
Disclosed is an etching method for etching an etching target layer. The etching method includes: a first step of depositing a plasma reaction product on a mask...
US-9,418,862 Method for integrated circuit patterning
A method includes forming a resist over a substrate, resulting in a layer of resist scum between the resist and the substrate. The method further includes...
US-9,418,861 Method of manufacturing a display substrate using two etch masks
Provided are a display substrate, a display device, and a method of manufacturing the display substrate. The display substrate includes: a substrate in which a...
US-9,418,860 Use of topography to direct assembly of block copolymers in grapho-epitaxial applications
A method is provided for forming a patterned topography on a substrate. The substrate is provided with features formed atop that constitute an existing...
US-9,418,859 Plasma-enhanced etching in an augmented plasma processing system
Methods for etching a substrate in a plasma processing chamber having at least a primary plasma generating region and a secondary plasma generating region...
US-9,418,858 Selective etch of silicon by way of metastable hydrogen termination
Methods of etching exposed silicon on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing...
US-9,418,857 Sensor component for a gas and/or liquid sensor, production method for a sensor component for a gas and/or...
A sensor component is described for a gas and/or liquid sensor having a substrate having at least one first printed conductor and a second printed conductor,...
US-9,418,856 Methods of forming titanium-aluminum layers for gate electrodes and related semiconductor devices
Methods of forming a semiconductor device are provided in which a first titanium-aluminum layer is formed in a recess. A first titanium layer is formed in the...
US-9,418,855 Method of manufacturing semiconductor device, substrate processing apparatus, and non-transitory...
A halogen element-containing metal material and a nitrogen-containing material are alternately supplied to a process chamber with a flow rate of an inert gas...
US-9,418,854 Semiconductor device including buried gate, module and system, and method for manufacturing
An embodiment of the semiconductor device includes a recess formed in an active region, a gate buried in a lower part of the recess, a first capping insulation...
US-9,418,853 Method for forming a stacked layer structure
The present invention provides a method for forming a stacked layer structure, including: first, a recess is provided, next, an oxide layer is formed in the...
US-9,418,852 Method of manufacturing a semiconductor device
A method of manufacturing a semiconductor device that sufficiently activates a deep ion injection layer and fully recovers lattice defects generated in the ion...
US-9,418,851 Method for manufacturing a semiconductor device
A wafer includes a semiconductor layer having a concentration of n-dopants. A first mask is formed on the wafer and has first openings in an active area of a...
US-9,418,850 Semiconductor device and method for forming a semiconductor device
A method includes forming an emitter at the first side of a semiconductor substrate by doping, wherein the dopant concentration is higher in the emitter than in...
US-9,418,849 Cavity structure using patterned sacrificial layer
A method includes forming a sacrificial layer over a bottom substrate. The sacrificial layer is patterned based on a desired etching distance. A top layer is...
US-9,418,848 Methods of forming patterns with a mask formed utilizing a brush layer
Some embodiments include methods of forming patterns. A first mask is formed over a material. The first mask has features extending therein and defines a first...
US-9,418,847 Lithography system and method for haze elimination
The present disclosure provides an apparatus in semiconductor manufacturing. The apparatus includes a mask, a pellicle frame attached to the mask, and a...
US-9,418,846 Selective dopant junction for a group III-V semiconductor device
An approach to providing a method of forming a dopant junction in a semiconductor device. The approach includes performing a surface modification treatment on...
US-9,418,845 Method for forming semiconductor device with SEG film active region
A semiconductor device and a method for manufacturing the same are provided. A barrier film is formed in a device separating structure, and the device...
US-9,418,844 Selenium interlayer for high-efficiency multijunction solar cell
A multi-junction solar cell is provided and includes multiple semiconducting layers and an interface layer disposed between the multiple semiconducting layers....
US-9,418,843 Method for manufacturing ordered nanowire array of NiO doped with Pt in situ
The present disclosure provides a method for manufacturing ordered nanowires array of NiO doped with Pt in situ, comprising: growing a Ni layer on a...
US-9,418,842 Coating liquid for forming metal oxide thin film, metal oxide thin film, field-effect transistor, and method...
A coating liquid for forming a metal oxide thin film includes: an inorganic indium compound; an inorganic calcium compound or an inorganic strontium compound,...
US-9,418,841 Type III-V and type IV semiconductor device formation
Forming a semiconductor device is disclosed, according to embodiments of the present disclosure. Forming the semiconductor device can include forming a first...
US-9,418,840 Silicon carbide semiconductor device manufacturing method and silicon carbide semiconductor device
Silicon-containing gas, carbon-containing gas, and chlorine-containing gas are introduced into a reacting furnace. Next, a SiC epitaxial film is grown on the...
US-9,418,839 Method for the fabrication and transfer of graphene
Provided herein are processes for transferring high quality large-area graphene layers (e.g., single-layer graphene) to a flexible substrate based on...
US-9,418,838 Electronic device and method for fabricating the same
An electronic device with improved variable resistance characteristics and a method for fabricating the same are provided. In an embodiment of the disclosed...
US-9,418,837 Semiconductor device manufacturing method and substrate treatment system
A semiconductor device manufacturing method that includes: forming a gate insulating film containing a hafnium oxide and a zirconium oxide on a workpiece having...
US-9,418,836 Polyoxometalate and heteropolyoxometalate compositions and methods for their use
The present invention relates to novel compositions comprising a metal component selected from a group chosen from at least one polyoxometalate, at least one...
US-9,418,835 Methods for manufacturing semiconductor devices
The present disclosure provides a method of manufacturing a semiconductor device having silicon nitride with a tensile stress, the method comprising: c1)...
US-9,418,834 System and methods for spin-on coating of self-assembled monolayers or periodic organosilicates on a substrate
This disclosure relates to a processing system for spin-coating a substrate with Molecular Self-assembly (MSA) chemicals to form photoresist films and/or low...
US-9,418,833 Synthetic diamond coated compound semiconductor substrates
A method of fabricating a synthetic diamond coated compound semiconductor substrate, the method comprising: loading a composite substrate into a chemical vapor...
US-9,418,832 Method of forming a dielectric film
A method for flowable oxide deposition is provided. An oxygen source gas is increased as a function of time or film depth to change the flowable oxide...
US-9,418,831 Method for precision cleaning and drying flat objects
Cleaning and drying of semiconductor wafers is carried out in a single-chamber type cleaning/drying apparatus for flat objects such as semiconductor wafer,...
US-9,418,830 Methods for bonding semiconductor wafers
A method of bonding a cap wafer to a device wafer includes heating the device wafer and the cap wafer in the chamber, cooling the device wafer and the cap wafer...
US-9,418,829 Low pressure lamp using non-mercury materials
A mercury-free low-pressure lamp having a bulb is provided. The bulb includes a non-mercury emissive material. When the bulb is in a non-operational state, the...
US-9,418,828 Characterization of petroleum saturates
A method for characterizing the saturates portion of a petroleum or hydrocarbon sample that includes compounds with boiling points of 1000.degree. F....
US-9,418,827 Methods of ion source fabrication
A method of ion source fabrication for a mass spectrometer includes simultaneously forming aligned component portions of an ion source using direct metal laser...
US-9,418,826 Ion optical system for mass spectrometer
A mass spectrometer includes: a plasma generation device for generating plasma for ionizing an introduced sample; an interface device for drawing the plasma...
US-9,418,825 Method and device for mass spectrometry
A mass spectrometry is equipped with a liquid specimen supply part which supplies a liquid specimen sandwiched between bubbles, an ion source part ionizes the...
US-9,418,824 Lock component corrections
A method of mass spectrometry is disclosed comprising initially calibrating or recalibrating a mass spectrometer at a time T.sub.0 and at the same time...
US-9,418,823 Sputtering apparatus
A magnetron assembly for a rotary target cathode comprises a rigid support structure, a magnet bar structure movably attached to the rigid support structure,...
US-9,418,822 Plasma processing apparatus, plasma processing method and high frequency generator
A plasma processing apparatus includes a plasma generating device configured to generate a plasma within a processing vessel by using a high frequency wave...
US-9,418,820 Cold plasma treatment devices and associated methods
A cold plasma helmet application device for delivery of cold plasma benefits to the head of a patient. An appropriate gas is introduced into a helmet receptacle...
US-9,418,819 Asymmetrical detector design and methodology
A charged particle detection device has an active portion for configured to produce a signal in response secondary charged particles emitted from a sample...
US-9,418,818 Charged particle beam device and sample observation method
A sample observation method includes irradiating a sample with a primary charged particle beam, detecting a secondary charged particle signal obtained by the...
US-9,418,817 Focused ion beam apparatus and control method thereof
A focused ion beam apparatus has an emitter for emitting an ion beam, an ion source chamber accommodating the emitter, a cooling unit and a heating unit for...
← Previous | 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 101 102 103 104 105 106 107 108 109 110 111 112 113 114 115 116 117 118 119 120 121 122 123 124 125 126 127 128 129 130 131 132 133 134 135 136 | Next →

File A Patent Application

  • Protect your idea -- Don't let someone else file first. Learn more.

  • 3 Easy Steps -- Complete Form, application Review, and File. See our process.

  • Attorney Review -- Have your application reviewed by a Patent Attorney. See what's included.