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Patent # Description
US-9,425,278 Segregated FinFET structure and manufacturing method
A semiconductor device includes a semiconductor fin on a substrate. The semiconductor fin includes a stack of alternating layers of first and second materials...
US-9,425,277 Method for depinning the Fermi level of a semiconductor at an electrical junction and devices incorporating...
An electrical device in which an interface layer comprising arsenic is disposed between and in contact with a conductor and a semiconductor. In some cases, the...
US-9,425,276 High electron mobility transistors
The present disclosure relates to a donor layer of bi-layer AlGaN and associated method of fabrication within a high electron mobility transistor (HEMT)...
US-9,425,275 Integrated circuit chips having field effect transistors with different gate designs
An integrated circuit chip includes a semiconductor substrate, a first back-end-of-line unit circuit that includes a first group of field effect transistors, a...
US-9,425,274 Method for forming semiconductor device including spacers having different dimensions
The semiconductor device structures and methods for forming the same are provided. The semiconductor device structure includes a metal gate over a substrate. A...
US-9,425,273 Semiconductor chip including integrated circuit including at least five gate level conductive structures having...
A semiconductor chip region includes a first conductive structure (CS) that forms a gate electrode (GE) of a first transistor of a first transistor type (TT)...
US-9,425,272 Semiconductor chip including integrated circuit including four transistors of first transistor type and four...
A semiconductor chip region includes a first conductive structure (CS) that forms a gate electrode (GE) of a first transistor of a first transistor type (TT)...
US-9,425,271 Insulated-gate bipolar transistor
In an IGBT, a trench extending in a bent shape to have a corner is formed in an upper surface of a semiconductor substrate. The inside of the trench is covered...
US-9,425,270 Array substrate structure and contact structure
A contact structure is provided, including a substrate, an active layer, an inter-layer dielectric (ILD) layer, a contact opening, and a conductive layer. The...
US-9,425,269 Replacement emitter for reduced contact resistance
Device structures for a bipolar junction transistor and methods for fabricating such device structures. An emitter structure is formed that has a semiconductor...
US-9,425,268 Compound semiconductor device and method of manufacturing the same
A compound semiconductor device includes: a compound semiconductor layered structure; a gate electrode formed above the compound semiconductor layered...
US-9,425,267 Transistor with charge enhanced field plate structure and method
Transistors and methods of fabricating are described herein. These transistors include a field plate (108) and a charged dielectric layer (106) overlapping at...
US-9,425,266 Integrated floating diode structure and method therefor
In one embodiment, a floating diode structure includes a p-type semiconductor substrate. An n-type doped region is disposed between the semiconductor substrate...
US-9,425,265 Edge termination technique for high voltage power devices having a negative feature for an improved edge...
Embodiments of a semiconductor die having a semiconductor device implemented on the semiconductor die and an edge termination structure around a periphery of...
US-9,425,264 Method for growing an epitaxial film on a phosphorous-doped silicon wafer
A method includes: a backside-oxidation-film-formation step in which an oxidation film is formed on a backside of a silicon wafer; a ...
US-9,425,263 Silicon carbide semiconductor device and method for manufacturing same
A method for manufacturing a silicon carbide semiconductor device includes the following steps. A silicon carbide substrate is prepared. A first heating step of...
US-9,425,262 Configuration of portions of a power device within a silicon carbide crystal
In one general aspect, an apparatus can include a silicon carbide (SiC) crystal having a top surface aligned along a plane and the SiC crystal having an...
US-9,425,261 Silicon-carbide semiconductor device and method for manufacturing the same
A silicon carbide semiconductor device that reduces an influence of an off-angle of a silicon carbide substrate on characteristics of the semiconductor device...
US-9,425,260 Application of super lattice films on insulator to lateral bipolar transistors
A lateral bipolar junction transistor including a base region on a dielectric substrate layer. The base region includes a layered stack of alternating material...
US-9,425,259 Semiconductor device having a fin
Provided is a semiconductor device. The semiconductor device includes a fin disposed on a substrate along a first direction. A sacrificial layer is disposed on...
US-9,425,258 Semiconductor device
A semiconductor device and a method of making the same. The device includes a semiconductor substrate having an AlGaN layer on a GaN layer. The device also...
US-9,425,257 Non-planar SiGe channel PFET
Systems and methods are provided for fabricating a semiconductor device structure. An example semiconductor device structure includes a channel layer formed of...
US-9,425,256 Strain inducing semiconductor regions
A method to form a strain-inducing semiconductor region is described. In one embodiment, formation of a strain-inducing semiconductor region laterally adjacent...
US-9,425,255 Nanowire and planar transistors co-integrated on utbox SOI substrate
Fabrication of a microelectronic device on a semiconductor on insulator type substrate, the device being provided with a transistor of a given type, the channel...
US-9,425,254 Hybrid integrated nanotube and nanostructure substrate systems and methods
Systems and methods for providing a hybrid integrated nanostructure and nanotube substrate system are disclosed. The system includes a substrate having a...
US-9,425,253 Passivated nanoparticles
Passivated semiconductor nanoparticles and methods for the fabrication and use of passivated semiconductor nanoparticles is provided herein.
US-9,425,252 Process for single diffusion break with simplified process
A method of forming a SDB including a protective layer or bilayer and the resulting device are provided. Embodiments include forming a SDB of oxide in a Si...
US-9,425,251 Thin film transistor substrate and organic light-emitting diode (OLED) display having the same
A thin film transistor substrate and an organic light-emitting diode (OLED) display are disclosed. In one aspect, the OLED includes a thin film transistor...
US-9,425,250 Transistor with wurtzite channel
A device includes a source region, a drain region, and a wurtzite semiconductor between the source region and the drain region. A source-drain direction is...
US-9,425,249 Coincident site lattice-matched growth of semiconductors on substrates using compliant buffer layers
A method of producing semiconductor materials and devices that incorporate the semiconductor materials are provided. In particular, a method is provided of...
US-9,425,248 Composite substrate
Disclosed is a composite substrate, which is provided with an inorganic insulating sintered substrate, which has a heat conductivity of 5 W/mK or more, and a...
US-9,425,247 Metal-insulator-metal capacitor with current leakage protection
A metal insulator metal (MIM) capacitor includes a top electrode, a first via contacting a first surface of the top electrode, a bottom electrode, a second via...
US-9,425,246 Organic light emitting display device and method of repairing the same
An organic light emitting display device includes a substrate including a display area and a non-display area, a plurality of scan lines extended in a first...
US-9,425,245 Array substrate and method for manufacturing the same, display device
Embodiments of the present invention disclose an array substrate comprising a plurality of pixel units disposed on a base substrate, the pixel units comprising:...
US-9,425,244 Display device
A display device is provided including a display region arranged with a plurality of the pixels in a matrix, the plurality of pixels including a light emitting...
US-9,425,243 Organic light emitting display panel
An organic light emitting display panel includes: a pixel defined by an intersection of one of a plurality of data lines and one of a plurality of gate lines,...
US-9,425,242 Organic light emitting diode display
An organic light emitting diode (OLED) display includes: a substrate; a first semiconductor layer and a second semiconductor layer separated from each other on...
US-9,425,241 Organic electroluminescence display unit, method of manufacturing organic electroluminescence display unit, and...
A display device includes a first electrode, an organic layer including a light emitting region, and a second electrode. The display device also includes a...
US-9,425,240 Image sensors with organic photodiodes and methods for forming the same
Embodiments of forming an image sensor with organic photodiodes are provided. Trenches are formed in the organic photodiodes to increase the PN-junction...
US-9,425,239 Vertical transistor for resistive memory
The present disclosure relates to a memory on semiconductor substrate, comprising: at least one data line, at least one selection line, at least one reference...
US-9,425,238 Semiconductor device and method for fabricating the same
A semiconductor device includes a memory block including a transistor region and a memory region. A variable resistance layer of the memory region acts as a...
US-9,425,237 Selector device for two-terminal memory
Solid-state memory having a non-linear current-voltage (I-V) response is provided. By way of example, the solid-state memory can be a selector device. The...
US-9,425,236 Light emitting device
A light emitting device includes: a ceramic substrate; a plurality of LED chips; a printed resistor(s) connected in parallel with the plurality of LED chips; a...
US-9,425,235 Light emitting device including resin package having differently curved parts
A light emitting device, having: a first light emitting element and a second light emitting element; and a resin package equipped with an opening having a...
US-9,425,234 Quantum dot digital radiographic detection system
A digital quantum dot radiographic detection system described herein includes: a scintillation subsystem 202 and a semiconductor visible light detection...
US-9,425,233 RGBZ pixel cell unit for an RGBZ image sensor
An image sensor is described. The image sensor includes a pixel array having a unit cell that includes visible light photodiodes and an infra-red photodiode....
US-9,425,232 Very small pixel pitch focal plane array and method for manufacturing thereof
An imaging device includes a first semiconductor layer having a first surface and a second surface and a first photodetector having a first implanted region...
US-9,425,231 Image sensor and method for fabricating the same
An image sensor includes: a first inter-layer dielectric layer formed over a front side of a substrate including photoelectric conversion regions; isolation...
US-9,425,230 Solid-state imaging device and manufacturing method of the same, and electronic apparatus
There is provided a solid-state imaging device including: an imaging pixel including a photoelectric conversion unit which receives incident light; and a phase...
US-9,425,229 Solid-state imaging element, imaging device, and signal processing method including a dispersing element array...
This solid-state image sensor includes a photosensitive cell array including first through fourth photosensitive cells 2a to 2d, a dispersing element array...
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