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Patent # Description
US-9,437,779 Semiconductor light emitting device and method for manufacturing the same
According to one embodiment, a semiconductor light emitting device includes a structure, a first electrode layer, and a second electrode layer. The structure...
US-9,437,778 Semiconductor light-emitting element and method for producing the same
The semiconductor light-emitting element includes: a substrate; a semiconductor layer that is provided over the substrate; a first electrode that is provided in...
US-9,437,777 Semiconductor device with antenna and light-emitting element
When a conductive layer occupying a large area is provided in a coiled antenna portion, it has been difficult to supply power stably. A memory circuit portion...
US-9,437,776 Method for manufacturing light emitting diodes with smooth surface for reflective electrode
A light emitting diode comprising an epitaxial layer structure, a first electrode, and a second electrode. The first and second electrodes are separately...
US-9,437,775 Nitride semiconductor light-emitting device
An object is to improve a positive hole injection efficiency into an active layer in a nitride semiconductor light-emitting device. The nitride semiconductor...
US-9,437,774 Deep ultraviolet light emitting diode
A method of fabricating a light emitting diode, which includes an n-type contact layer and a light generating structure adjacent to the n-type contact layer, is...
US-9,437,773 Semiconductor light-emitting element and manufacturing method for the same
A semiconductor light-emitting element includes a substrate, a first metal layer, a second metal layer, a translucent conductive layer, and a semiconductor...
US-9,437,772 Method of manufacture of advanced heterojunction transistor and transistor laser
Methods of manufacture of advanced heterojunction transistors and transistor lasers, and their related structures, are described herein. Other embodiments are...
US-9,437,771 Monolithic active pixel radiation detector with shielding techniques
A monolithic active pixel radiation detector including a method of fabricating thereof. The disclosed radiation detector can include a substrate comprising a...
US-9,437,770 Radiation detector and medical diagnostic system
A radiation detector is disclosed, including a plurality of detector elements arranged adjacent to one another in a planar manner. In an embodiment, for the...
US-9,437,769 Four-junction quaternary compound solar cell and method thereof
A four-junction quaternary compound solar cell and a method thereof are provided. Forming a first subcell (100) with a first band gap, a lattice constant...
US-9,437,768 Photoelectric conversion device
A photoelectric conversion device with low resistance loss and high conversion efficiency is provided. The photoelectric conversion device includes a first...
US-9,437,767 Multiple solar cell and method for manufacturing the same
A multi-junction solar cell having a Ge or GaAs substrate, as well as a solar cell structure having several subcells deposited on the substrate, the substrate...
US-9,437,766 Photovoltaic thermal hybrid systems and method of operation thereof
A method is disclosed for operating a photovoltaic thermal hybrid system having a hybrid solar receiver with a photovoltaic module, operatively coupled to the...
US-9,437,765 Solar cell module and solar cell module manufacturing method
A solar cell module includes: a plurality of solar cell elements that have electrodes on surfaces thereof; a tab wire that connects the electrodes of the...
US-9,437,764 Photoelectric conversion device and method for manufacturing photoelectric conversion device
An exemplary embodiment is a photoelectric conversion device having a photoelectric conversion portion, and a transfer portion. The transfer portion transfers...
US-9,437,763 Trench process and structure for backside contact solar cells with polysilicon doped regions
A solar cell includes polysilicon P-type and N-type doped regions on a backside of a substrate, such as a silicon wafer. A trench structure separates the P-type...
US-9,437,762 Elevated pocket pixels, imaging devices and systems including the same and method of forming the same
An elevated photosensor for image sensors and methods of forming the photosensor. The photosensor may have light sensors having indentation features including,...
US-9,437,761 Method of forming chalcopyrite light-absorbing layer
Disclosed is a method of forming a chalcopyrite light-absorbing layer for a solar cell, including: forming a thin film including a chalcopyrite compound...
US-9,437,760 Method of reducing semiconductor window layer loss during thin film photovoltaic device fabrication, and...
A completed photovoltaic device and method forming it are described in which fluxing of a window layer into an absorber layer is mitigated by the presence of a...
US-9,437,759 Germanium metal-contact-free near-IR photodetector
A Ge-on-Si photodetector constructed without doping or contacting Germanium by metal is described. Despite the simplified fabrication process, the device has...
US-9,437,758 Photoelectric conversion device
A photoelectric conversion device in photoelectric conversion in a light-absorption region in a crystalline silicon substrate is efficiently performed is...
US-9,437,757 Methods for wet chemistry polishing for improved low viscosity printing in solar cell fabrication
A method of fabricating a solar cell is disclosed. The method includes forming a polished surface on a silicon substrate and forming a first flowable matrix in...
US-9,437,756 Metallization of solar cells using metal foils
A solar cell structure includes P-type and N-type doped regions. A dielectric spacer is formed on a surface of the solar cell structure. A metal layer is formed...
US-9,437,755 Front contact solar cell with formed electrically conducting layers on the front side and backside
A bipolar solar cell includes a backside junction formed by a silicon substrate and a first doped layer of a first dopant type on the backside of the solar...
US-9,437,754 Method of manufacturing electrical device
A method of manufacturing an electrical device comprising steps of: preparing a substrate; applying a conductive paste onto the substrate, wherein the...
US-9,437,753 Device comprising electrical contacts and its production process
A device includes a conductive surface (12) and electrical contacts (14) by which an electric current is able to be passed. The electrical contacts (14) include...
US-9,437,752 Compact memory structure including tunneling diode
A resonant inter-band tunnel diode (RITD) can be fabricated using semiconductor processing similar to that used for Complementary Metal-Oxide-Semiconductor...
US-9,437,751 Non-volatile memory device including charge trapping layer and method for fabricating the same
A non-volatile memory device includes a charge trapping layer for trapping charges. The charge trapping layer includes a linker layer formed over a substrate...
US-9,437,750 Thin film transistor and method of making same
A method for forming a TFT includes providing a substrate, and forming a gate electrode, an electrically insulating layer, a semiconductor layer, an etch stop...
US-9,437,749 Semiconductor device and method for fabricating the same
To provide a highly reliable semiconductor device exhibiting stable electrical characteristics. To fabricate a highly reliable semiconductor device. Included...
US-9,437,748 Method for manufacturing semiconductor device
To provide a method by which a semiconductor device including a thin film transistor with excellent electric characteristics and high reliability is...
US-9,437,747 Thin film transistor with multiple oxide semiconductor layers
A transistor having high field-effect mobility is provided. In order that an oxide semiconductor layer through which carriers flow is not in contact with a gate...
US-9,437,746 Thin film transistor substrate having metal oxide semiconductor and method for manufacturing the same
The present disclosure relates to a thin film transistor substrate with a metal oxide semiconductor layer that has enhanced characteristics and stability. The...
US-9,437,745 Semiconductor device and method for manufacturing same
The present invention provides a semiconductor device which is provided with an oxide semiconductor TFT that can be reduced in the parasitic capacitance by...
US-9,437,744 Semiconductor device and manufacturing method thereof
When an oxide semiconductor film is microfabricated, with the use of a hard mask, unevenness of a side surface of the oxide semiconductor film can be...
US-9,437,743 Thin film element, semiconductor device, and method for manufacturing the same
An object is to provide a method for manufacturing a semiconductor device without exposing a specific layer to moisture or the like at all. A thin film element...
US-9,437,742 Thin film transistor, manufacturing method thereof and array substrate
A thin film transistor, a manufacturing method thereof and an array substrate are provided. The thin film transistor includes: a gate electrode (102) formed on...
US-9,437,741 Semiconductor device
A semiconductor device including a transistor having excellent electrical characteristics is provided. Alternatively, a semiconductor device having a high...
US-9,437,740 Epitaxially forming a set of fins in a semiconductor device
Approaches for enabling epitaxial growth of silicon fins in a device (e.g., a fin field effect transistor device (FinFET)) are provided. Specifically,...
US-9,437,739 Finfet seal ring
A semiconductor device includes a first front-end-of-line (FEOL) seal ring on a substrate, the seal ring comprising ring-shaped fin-like structures, integrated...
US-9,437,738 Field effect transistor with heterostructure channel
In some embodiments, an FET structure comprises a heterostructure, and a gate structure. The heterostructure comprises a first section, a barrier section and a...
US-9,437,737 Semiconductor device, method of manufacturing the same, and method of evaluating semiconductor device
A semiconductor device has: a silicon (semiconductor) substrate; a gate insulating film and a gate electrode, which are formed on the silicon substrate in this...
US-9,437,736 Non-volatile semiconductor memory device
In a non-volatile semiconductor memory device, it is only necessary that, at the time of data writing, a voltage drop is caused in a high resistance region....
US-9,437,735 Tunnel FET
According to one embodiment, a tunnel FET includes a semiconductor region of a first conductivity type, a gate electrode provided on a surface portion of the...
US-9,437,734 Semiconductor device with protective films and manufacturing method thereof
A semiconductor device includes a semiconductor substrate having a drain region, a source region and an impurity diffusion region; an oxide film formed on the...
US-9,437,733 Dynamic threshold MOS and methods of forming the same
A chip includes a semiconductor substrate, a well region in the semiconductor substrate, and a Dynamic Threshold Metal-Oxide Semiconductor (DTMOS) transistor...
US-9,437,732 Semiconductor device
A semiconductor device includes a fin-shaped semiconductor layer on a semiconductor substrate and extends in a first direction with a first insulating film...
US-9,437,731 Semiconductor device having vertical channel, resistive memory device including the same, and method of...
A semiconductor device includes a semiconductor substrate having a first conductivity type, a plurality of pillars extending to a direction perpendicular to a...
US-9,437,730 Semiconductor device using three dimensional channel
According to example embodiments, a semiconductor device includes a first fin, a second fin that is separated from the first fin, and a gate on the first fin...
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