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Patent # Description
US-9,437,679 Semi-conductor device with epitaxial source/drain facetting provided at the gate edge
A semiconductor structure includes an active layer located on a substrate and a first and a second gate structure located on the active layer. A first raised...
US-9,437,678 Fabrication method of semiconductor device, evaluation method of semiconductor device, and semiconductor device
A fabrication method of a semiconductor device that includes trench gate structures each having a gate electrode extending in a depth-direction of an element,...
US-9,437,677 Deposition on a nanowire using atomic layer deposition
A semiconductor device includes a substrate, a nanowire, a first structure, and a second structure. The nanowire is suspended between the first structure and...
US-9,437,676 Layer system
A layer system having a layer region whereby the layer region has a single-crystal silicon substrate with a front side and a back side, and whereby a textured...
US-9,437,675 eDRAM for planar III-V semiconductor devices
Electronic devices including eDRAM structures are formed with a semi-insulating III-V semiconductor layer that suppresses parasitic leakage between the eDRAM...
US-9,437,674 Insulating trench forming method
A method of manufacturing an insulating trench including the successive steps of: a) forming, on a semiconductor substrate, a first masking structure including...
US-9,437,673 Floating guard ring for HV interconnect
Aspects of the present disclosure describe an integrated circuit comprises a substrate of a first conductivity type semiconductor, a lightly doped semiconductor...
US-9,437,672 Semiconductor device
A semiconductor device includes: a first semiconductor layer of a nitride semiconductor formed on a substrate; a second semiconductor layer of a nitride...
US-9,437,671 Power and signal extender and related circuit board
A power and signal extender, which is utilized on a circuit board for preventing a power or a signal on the circuit board from influencing an integrity of a...
US-9,437,670 Light activated test connections
A test circuit including a light activated test connection in a semiconductor device is provided. The light activated test connection is electrically conductive...
US-9,437,669 Semiconductor device
A semiconductor resistor circuit has resistor elements of a polycrystalline silicon thin film formed on an insulating film deposited on a semiconductor...
US-9,437,668 High resistivity soft magnetic material for miniaturized power converter
An on-chip magnetic structure includes a magnetic material comprising cobalt in a range from about 80 to about 90 atomic % (at. %) based on the total number of...
US-9,437,667 Display device
A display device is disclosed. In one aspect, the device includes a substrate including a display area displaying an image via a plurality of pixels and a...
US-9,437,666 OLED display device that prevents shorting of interconnections during manufacture thereof
An organic light emitting diode (OLED) display device, including a first substrate and a second substrate facing each other, a sealant arranged between the...
US-9,437,665 Organic light-emitting display apparatus
Disclosed is an organic light-emitting display apparatus. The organic light-emitting display apparatus includes a pixel electrode that is connected to at least...
US-9,437,664 Display device and manufacturing method thereof
A display device may include a display area for displaying an image. The display device may further include a peripheral area that surrounds the display area....
US-9,437,663 Array substrate and fabrication method thereof, and display device
An array substrate and a fabrication method thereof, and a display device are provided. The array substrate comprises: a pattern of an organic light-emitting...
US-9,437,662 Display device with transistor sampling for improved performance
A display device including a pixel array having a plurality of pixels arranged in a matrix form, each of the pixels including a sampling transistor configured...
US-9,437,661 Thin film transistor substrate, display device having the same and method of manufacturing the same
A thin film transistor substrate includes a semiconductor pattern on a base substrate, a first insulation member disposed on the semiconductor pattern, a second...
US-9,437,660 Organic light-emitting diode display panel
Disclosed is an organic light-emitting diode (OLED) display panel. An OLED display panel includes a plurality of signal lines and a thin film transistor formed...
US-9,437,659 Organic electroluminescent display device
An organic electroluminescent display device includes: a substrate; plural anodes that are formed in respective pixels; pixel separation films that cover at...
US-9,437,658 Fully isolated selector for memory device
A monolithic, three-dimensional memory device includes a substrate and a plurality of electrically conductive word lines over a major surface of the substrate....
US-9,437,657 Solid state devices having fine pitch structures
In various embodiments, a method for forming a memory array includes forming a plurality of rows and columns of hardmask material, etching holes in the one or...
US-9,437,656 Semiconductor memory device
A semiconductor memory device according to one embodiment of the present invention includes a dielectric film configured to store information depending on...
US-9,437,655 Magnetic tunnel junction with superlattice barriers
A magnetic tunnel junction is provided. The magnetic tunnel junction can enhance the tunnel magnetoresistance ratio and a device including the magnetic tunnel...
US-9,437,654 Magnetic memory devices
Magnetic memory devices may include a substrate, a circuit device on the substrate, a plurality of lower electrodes electrically connected to the circuit...
US-9,437,653 Stress sensing devices and methods
Embodiments relate to stress sensors and methods of sensing stress. In an embodiment, a stress sensor comprises a vertical resistor. The vertical resistor can...
US-9,437,652 CMOS compatible thermopile with low impedance contact
An integrated circuit containing CMOS transistors and an embedded thermoelectric device may be formed by forming active areas which provide transistor active...
US-9,437,651 Method of manufacturing imaging device
One portion of a first insulator film, which is positioned on a second semiconductor region, and another portion of the first insulator film, which is...
US-9,437,650 Image device and methods of forming the same
A method of forming of an image sensor device includes a patterned hardmask layer is formed over a substrate. The patterned hard mask layer has a plurality of...
US-9,437,649 Semiconductor structure, method for forming the same and method for suppressing hot cluster
A semiconductor structure for suppressing hot clusters includes a substrate of a first dopant concentration, an epitaxial layer having a second dopant...
US-9,437,648 Solid-state image pickup device
A solid-state image pickup device includes a plurality of pixels each including a photoelectric conversion section that generates an electric charge in...
US-9,437,647 Solid-state image capturing apparatus, method of manufacturing the same, and camera
A solid-state image capturing apparatus, comprising a semiconductor substrate including a first region of a first conductivity type, charge accumulation regions...
US-9,437,646 Detecting device, detector, and imaging apparatus using the same
A detecting device which detects electromagnetic waves includes an antennal configured to receive electromagnetic waves, and a plurality of semiconductor...
US-9,437,645 Composite grid structure to reduce cross talk in back side illumination image sensors
A semiconductor structure for back side illumination (BSI) pixel sensors is provided. Photodiodes are arranged within a semiconductor substrate. A composite...
US-9,437,644 Semiconductor device and method of manufacturing same
To provide a semiconductor device having a photoelectric conversion element having a high sensitivity, causing less blooming, and capable of providing a highly...
US-9,437,643 Semiconductor integrated circuit device
Provided is a semiconductor integrated circuit device having pixel regions in a photodiode array region and having, in each of the pixel regions, a waveguide...
US-9,437,642 Semiconductor device including a solid state imaging device
A semiconductor device is reduced in power consumption, the semiconductor device including a solid-state imaging device that includes pixels each having a...
US-9,437,641 Solid-state imaging device
A solid-state imaging device includes a substrate, a photoelectric conversion section, a first impurity layer having a carrier polarity of a second conductivity...
US-9,437,640 Engineering induced tunable electrostatic effect
Backside illuminated sensors and methods of manufacture are described. Specifically, a backside illuminated sensor with a dipole modulating layer near the...
US-9,437,639 Semiconductor device and manufacturing method thereof
Provided is a semiconductor device which allows an alignment mark used for the manufacturing of a solid-state image sensor (semiconductor device) having a...
US-9,437,638 Photodetector for imaging system
There is disclosed a substrate including at least one photodetector, the photodetector having a first active area on a first surface of the substrate and a...
US-9,437,637 Semiconductor device manufacturing method and resist pattern forming method
A method for manufacturing a semiconductor device comprising, forming a first photoresist pattern by exposing and then developing a first photoresist film...
US-9,437,636 Solid-state imaging element, manufacturing method, and electronic device
A solid-state imaging element includes a semiconductor substrate where a plurality of photodiodes are arranged in a plane, and a separation section which...
US-9,437,635 Solid-state image sensor, method of manufacturing the same and camera
An image sensor includes a semiconductor layer having first and second faces, and a wiring structure arranged on a side of the first face, wherein photoelectric...
US-9,437,633 Depth sensing pixel, composite pixel image sensor and method of making the composite pixel image sensor
A depth sensing pixel includes a photodiode; a first photo storage device; and a first transistor configured to selectively couple the photodiode to the first...
US-9,437,632 Image sensor and manufacturing method thereof
An image sensor and a manufacturing method thereof are provided. The image sensor includes: a photo diode; a first-conductive-type isolating layer; a...
US-9,437,631 Solid-state imaging device, manufacturing method of the same, and electronic apparatus
A solid-state imaging device includes plural photodiodes which are formed in a photodiode area of a unit pixel with no element separating area interposed...
US-9,437,630 Semiconductor photomultiplier
The present disclosure relates to photon detectors. In particular, the present disclosure relates to high sensitivity photon detectors such as semiconductor...
US-9,437,629 Rectenna that converts infrared radiation to electrical energy
Technologies pertaining to converting infrared (IR) radiation to DC energy are described herein. In a general embodiment, a rectenna comprises a conductive...
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