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Patent # Description
US-9,444,023 Phosphor sheet and light emitting device containing the same
The phosphor sheet of the present invention mainly includes a sheet material that is formed by mixing and solidifying of a phosphor powder and an adhesive...
US-9,444,022 Optoelectronic semiconductor chip, optoelectronic semiconductor component, and a method for producing an...
An optoelectronic semiconductor chip includes a semiconductor body that emits primary light, and a luminescence conversion element that emits secondary light by...
US-9,444,021 Film wiring substrate and light emitting device
The folding along the disposed direction of wiring patterns is prevented. Concave-convex shapes in a plan view for preventing the folding of a device as step...
US-9,444,020 Light-emitting device and method for manufacturing the same
A highly reliable light-emitting device and a manufacturing method thereof are provided. A light-emitting element and a terminal electrode are formed over an...
US-9,444,019 Method for reusing a substrate for making light-emitting device
A method for making a light-emitting device is provided. The method comprises the steps of providing a substrate, forming a nucleation layer on the substrate,...
US-9,444,018 Light emitting diode
A light emitting diode includes a first semiconductor layer, an active layer, a second semiconductor layer, a protective layer, and a cermet layer. The active...
US-9,444,017 Semiconductor light emitting device with a film having a roughened surface
According to one embodiment, the second insulating film is provided between the first interconnect portion and the second interconnect portion, and at an outer...
US-9,444,016 Light emitting device
Provided are a light emitting device, a light emitting device package, and a lighting system. The light emitting device comprises a reflective layer, a second...
US-9,444,015 Micro assembled LED displays and lighting elements
The disclosed technology provides micro-assembled micro-LED displays and lighting elements using arrays of micro-LEDs that are too small (e.g., micro-LEDs with...
US-9,444,014 Solid state lighting devices with accessible electrodes and methods of manufacturing
Various embodiments of light emitting dies and solid state lighting ("SSL") devices with light emitting dies, assemblies, and methods of manufacturing are...
US-9,444,013 Semiconductor light emitting device and method for manufacturing the same
According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a p-side electrode, an n-side electrode, an insulating film,...
US-9,444,012 Semiconductor light emitting device and method for manufacturing the same
A semiconductor light emitting device includes a structural body, a first electrode layer, and a second electrode layer. The structural body includes a first...
US-9,444,011 Nitride semiconductor device
In the nitride semiconductor device of the present invention, an active layer 12 is sandwiched between a p-type nitride semiconductor layer 11 and an n-type...
US-9,444,010 Process for forming light-emitting diodes
The invention relates to a process for manufacturing light-emitting diodes comprising the following steps: a) forming light-emitting diodes (5) on a silicon...
US-9,444,009 Group-III nitride compound semiconductor light emitting element, manufacturing method therefor and...
A group-III nitride compound semiconductor light emitting element includes a substrate that has a main face on which an concave and convex portion is formed, a...
US-9,444,008 Semiconductor nanocrystals and compositions and devices including same
A semiconductor nanocrystal including a core comprising a first semiconductor material comprising at least three chemical elements and a shell disposed over at...
US-9,444,007 Nanopyramid sized opto-electronic structure and method for manufacturing of same
Aspects of the invention provide methods and devices. In one embodiment, the invention relates to the growing of nitride semiconductors, applicable for a...
US-9,444,006 Optical device and method for manufacturing same
Provided are an optical device and a method for manufacturing same. The optical device according to the present invention including: a transparent amorphous...
US-9,444,005 Light emitting diode structure
A light emitting diode structure is provided. The light emitting diode structure includes a substrate, a light emitting multi-layer structure, a first current...
US-9,444,004 System and method for producing modular photovoltaic panel assemblies for space solar arrays
An automated system provides automated manufacturing of photovoltaic standard power modules for utilization in a space solar array, in both rolled blanket and...
US-9,444,003 Layer-by-layer nanoassembled nanoparticles based thin films for solar cell and other applications
A solar cell. The solar cell includes a substrate, a first layer comprising a first copper-based material deposited upon the substrate, the first copper-based...
US-9,444,002 Graphene transistor optical detector based on metamaterial structure and application thereof
A graphene transistor optical detector based on a metamaterial structure and an application thereof. The optical detector includes a substrate, a gate metal...
US-9,444,001 Low cost, high performance barrier-based position sensitive detector arrays
A position sensitive detector includes a substrate, an absorber layer on the substrate, a barrier layer on the absorber layer, a contact layer on the barrier...
US-9,444,000 Photoelectric conversion device
A solar cell is provided with: a first conductivity layer comprising a first conductivity type material; a sensitizer layer formed on the first conductivity...
US-9,443,999 Solar energy collector
A solar collector is provided with a frame that is coupled to a based and configured to rotate about a vertical axis. A main panel assembly is attached to the...
US-9,443,998 Multi-layer-coated quantum dot beads
Disclosed herein are coated beads made of a primary matrix material and containing a population of quantum dot nanoparticles. Each bead has a multi-layer...
US-9,443,997 Hybrid CZTSSe photovoltaic device
A photovoltaic device includes a first contact and a hybrid absorber layer. The hybrid absorber layer includes a chalcogenide layer and a semiconductor layer in...
US-9,443,996 Dielectric structure for color filter array
An integrated circuit device in which an array of photodiodes are formed at the surface of a semiconductor substrate. A dielectric structure comprising multiple...
US-9,443,995 Solar battery cell and solar battery module
To accurately connect a TAB wire to intended positions while preventing an increase in manufacturing costs. A solar cell battery 100 includes finger electrodes...
US-9,443,994 Shielded electrical contact and doping through a passivating dielectric layer in a high-efficiency crystalline...
Solar cell structures and formation methods which utilize the surface texture in conjunction with a passivating dielectric layer to provide a practical and...
US-9,443,993 Spectroscopic sensor and method for manufacturing same
A method for manufacturing a spectroscopic sensor includes: (a) forming a light receiving element on a semiconductor substrate; (b) forming an angle restricting...
US-9,443,992 Solar panel autonomous cleaning device
Described herein is an autonomous cleaning device for a solar panel. The device includes a cleaning member mounted for unidirectional movement or bidirectional...
US-9,443,991 Semiconductor device and method of manufacturing the same
In a power feeding region of a memory cell (MC) in which a sidewall-shaped memory gate electrode (MG) of a memory nMIS (Qnm) is provided by self alignment on a...
US-9,443,990 Semiconductor device and method for manufacturing semiconductor device for adjusting threshold thereof
A manufacturing method of a semiconductor device in which the threshold is adjusted is provided. In a semiconductor device including a plurality of transistors...
US-9,443,989 Manufacturing method of semiconductor film, manufacturing method of semiconductor device, and manufacturing...
A method for forming an amorphous semiconductor which contains an impurity element and has low resistivity and a method for manufacturing a semiconductor device...
US-9,443,988 Semiconductor device
In a transistor having a top-gate structure in which a gate electrode layer overlaps with an oxide semiconductor layer which faints a channel region with a gate...
US-9,443,987 Semiconductor device
In a semiconductor device using a transistor including an oxide semiconductor, a change in electrical characteristics is suppressed and reliability is improved....
US-9,443,986 Thin film transistor
A thin file transistor includes a gate electrode, a source electrode, a drain electrode, a gate-insulating layer, and an oxide semiconductor layer. The oxide...
US-9,443,984 Semiconductor device and manufacturing method thereof
A semiconductor device capable of high speed operation is provided. Further, a highly reliable semiconductor device is provided. An oxide semiconductor having...
US-9,443,983 Pixel unit, array substrate and manufacturing method thereof, and display device
A pixel unit comprising a thin film transistor, a pixel electrode and a common electrode is provided. The common electrode and the pixel electrode form a...
US-9,443,982 Vertical transistor with air gap spacers
A semiconductor structure containing a vertical transistor having air gap spacers located above and below each functional gate structure is provided. Notably, a...
US-9,443,981 Thin film transistor, method for manufacturing the same, and semiconductor device
In a thin film transistor, an increase in off current or negative shift of the threshold voltage is prevented. In the thin film transistor, a buffer layer is...
US-9,443,980 Pulsed laser anneal process for transistors with partial melt of a raised source-drain
A non-planar transistor including partially melted raised semiconductor source/drains disposed on opposite ends of a semiconductor fin with the gate stack...
US-9,443,979 Semiconductor devices including trench walls having multiple slopes
A semiconductor device includes a gate spacer defining a trench. The trench includes a first part and a second part sequentially positioned on a substrate. An...
US-9,443,978 Semiconductor device having gate-all-around transistor and method of manufacturing the same
A semiconductor device includes a fin structure disposed on a substrate, a sacrificial layer pattern disposed on the fin structure, an active layer pattern...
US-9,443,977 FinFET with reduced source and drain resistance
A method for forming a semiconductor device comprises patterning and etching a fin in a semiconductor substrate, forming a gate stack over the fin, epitaxially...
US-9,443,976 Integrated circuit product comprising lateral and vertical FinFet devices
One example of a novel integrated circuit product disclosed herein includes, among other things, a lateral FinFET device comprising a first gate structure...
US-9,443,975 Method of manufacturing a device having a shield plate dopant region
Forming a transistor transistor includes forming a surface region, a gate, a source dopant region, a drain dopant region, a drift dopant region, a set of...
US-9,443,974 Super junction trench power MOSFET device fabrication
Methods of fabricating a super junction trench power MOSFET (metal oxide semiconductor field effect transistor) device are described. A column of p-type dopant...
US-9,443,973 Semiconductor device with charge compensation region underneath gate trench
A semiconductor substrate has a main surface and a rear surface vertically spaced apart from the main surface, a first doped region, a second doped region and a...
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