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Patent # Description
US-9,443,922 Metal-insulator-metal capacitor formation techniques
Techniques and structure are disclosed for providing a MIM capacitor having a generally corrugated profile. The corrugated topography is provisioned using...
US-9,443,921 Semiconductor package structure and semiconductor manufacturing process
The present disclosure relates to a semiconductor package structure and a manufacturing method thereof. The semiconductor package structure comprises a first...
US-9,443,920 Organic light emitting diode display having high aperture ratio and method for manufacturing the same
The present disclosure relates to an organic light emitting diode display having high aperture ratio and a method for manufacturing the same. The present...
US-9,443,919 Light emitting device and electronic equipment including a light reflection layer, and insulation layer, and a...
A light emitting device includes a transistor, a light reflection layer, a first insulation layer that includes a first layer thickness part, a second layer...
US-9,443,918 Light-emitting device
A light-emitting device having a curved light-emitting surface is provided. Further, a highly-reliable light-emitting device is provided. A substrate with...
US-9,443,917 Organic light-emitting display apparatus and method of manufacturing the same
Provided are an organic light-emitting display apparatus having superior light efficiency and ease of manufacture, as well as a method of manufacturing the...
US-9,443,916 Organic light emitting display device and method for manufacturing the same
An organic light emitting display (OLED) device, and a method of manufacturing the OLED device are discussed. The OLED device according to one embodiment...
US-9,443,915 Flexible display apparatus and method of manufacturing the same
Provided is a method of manufacturing a flexible display apparatus, the method including forming a sacrificial layer on a support substrate; forming a first...
US-9,443,914 Array substrate and manufacturing method thereof
An array substrate for an FPD device, wherein, in each of the display pixel dots in the display area, the first connection wiring is connected to the pixel...
US-9,443,913 Method of tuning display chromaticity by mixing color filter materials and device having mixed color filter...
A color display is provided that includes a light emitting sub-pixel and a filter layer including first and second color filter materials. The first color...
US-9,443,912 Solid-state image pickup device and manufacturing method thereof
There is provided a solid-state image pickup device that includes a functional region provided with an organic film, and a guard ring surrounding the functional...
US-9,443,911 Electronic device and method for fabricating the same
An electronic device includes a semiconductor memory unit. The semiconductor memory unit includes a plurality of conductive pillars stretching in a direction...
US-9,443,910 Silicided bit line for reversible-resistivity memory
A three-dimensional (3D) non-volatile memory array having a silicide bit line and method of fabricating is disclosed. The fabrication technique may comprise...
US-9,443,909 Electronic device and method for fabricating the same
An electronic device including a semiconductor memory includes a plurality of first electrodes and a plurality of second electrodes, which are disposed over a...
US-9,443,908 Electronic device and method for fabricating the same
An electronic device includes a semiconductor memory. The semiconductor memory includes a plurality of first pillar electrodes spaced apart from each other, a...
US-9,443,907 Vertical bit line wide band gap TFT decoder
A 3D memory array having a vertically oriented thin film transistor (TFT) selection device that has a body formed from a wide energy band gap semiconductor is...
US-9,443,906 TiOx based selector element
Control elements that can be suitable for nonvolatile memory device applications are disclosed. The control element can have low leakage currents at low...
US-9,443,905 Implementing 3D scalable magnetic memory with interlayer dielectric stack and pillar holes having programmable area
A three-dimensional (3D) scalable magnetic memory array and a method for implementing the three-dimensional (3D) scalable magnetic memory array for use in...
US-9,443,904 Light-emitting diode display and manufacturing method thereof
A light-emitting device display includes a substrate, a first bottom electrode, a second bottom electrode, a micro light emitting device, a first isolation...
US-9,443,903 Low temperature high strength metal stack for die attachment
A light emitting diode structure includes a diode region and a metal stack on the diode region. The metal stack includes a barrier layer on the diode region and...
US-9,443,902 Fabricating method of back-illuminated image sensor with dishing depression surface
A fabricating method of a back-illuminated image sensor includes the following steps. First, a silicon wafer having a first surface and a second surface is...
US-9,443,901 Image sensor having lens type color filter and method for fabricating the same
The image sensor includes lens-type color filters having a uniform shape for a plurality of pixels. The image sensor includes a plurality of pixels formed in a...
US-9,443,900 Pixel with multigate structure for charge storage or charge transfer
This disclosure provides an integrated circuit (IC) including one or more pixels. A photodiode is arranged in a semiconductor substrate and includes an n-type...
US-9,443,899 BSI CMOS image sensor with improved phase detecting pixel
An improved back side illuminated (BSI) complementary metal oxide semiconductor (CMOS) image sensor, and associated methods, improve phase detecting capability....
US-9,443,898 Image sensors having reduced interference between pixels
An image sensor includes first pixels and a first source follower transistor, which are disposed adjacent to each other in a first pixel area in a column...
US-9,443,897 X-Y address type solid state image pickup device and method of producing the same
In an X-Y address type solid state image pickup device represented by a CMOS image sensor, a back side light reception type pixel structure is adopted in which...
US-9,443,896 Imaging device
An imaging device includes a semiconductor substrate; and a unit pixel cell provided to a surface of the semiconductor substrate. The unit pixel cell includes:...
US-9,443,895 Solid-state image pickup apparatus and image pickup system
An apparatus according to the present invention in which a first substrate including a photoelectric conversion element and a gate electrode of a transistor,...
US-9,443,894 Imaging package with removable transparent cover
An imaging package includes an image sensor package formed with a semiconductor substrate. A removable transparent cover is bonded over the image sensor package...
US-9,443,893 Semiconductor device and method of manufacturing the same
A solid-state image sensing element including a transistor with stable electrical characteristics (e.g., significantly low off-state current) is provided. Two...
US-9,443,892 Image sensor and method of forming the same
An image sensor includes a substrate having a first surface opposing a second surface and a plurality of pixel regions. A photoelectric converter is included in...
US-9,443,891 Solid-state image sensor and imaging device
A ranging pixel located in a peripheral region of a solid-state image sensor includes a microlens having a center axis that is shifted relative to a center axis...
US-9,443,890 Shared active pixel sensor
A shared active pixel sensor includes a first shared photodiode, a first shared sense node, a first transfer gate, a first shared reset gate and a first shared...
US-9,443,889 Method for manufacturing array substrate
The present invention provides a method for manufacturing an array substrate, wherein each data line in a plurality of data line groups forms an integral...
US-9,443,888 Method of manufacturing semiconductor device including transistor and resistor incorporating hydrogen in oxide...
The silicon nitride layer 910 formed by plasma CVD using a gas containing a hydrogen compound such as silane (SiH.sub.4) and ammonia (NH.sub.3) is provided on...
US-9,443,887 Vertical and planar TFTS on common substrate
An electronic component includes a first transistor on a substrate. The first transistor includes a first source, a first drain, a first gate dielectric, a...
US-9,443,886 Thin film transistor substrate and method of fabricating the same
A thin film transistor substrate according to an embodiment includes a data line and a light barrier film to overlap an active layer of a thin film transistor,...
US-9,443,885 Semiconductor device and display device
An array board 11b includes a first diode 29, a contact portion 32, and a static protection portion 51. The first diode 29 includes first electrodes 29a, 29b...
US-9,443,884 Method for manufacturing ESD device, ESD device and display panel
There is disclosed a method for manufacturing an Electro Static Discharge (ESD) device, an ESD device and a display panel, which are capable of addressing an...
US-9,443,883 Methods of forming printable integrated circuit devices and devices formed thereby
Methods of forming integrated circuit devices include forming a sacrificial layer on a handling substrate and forming a semiconductor active layer on the...
US-9,443,882 Fan-out structure and display panel using the same
A display panel comprising a fan-out structure located in a peripheral region is provided. The peripheral region has two border regions and a central region....
US-9,443,881 Thin film transistor substrate and the method thereof
A thin film transistor array panel includes a gate line, a gate insulating layer that covers the gate line, a semiconductor layer that is disposed on the gate...
US-9,443,880 Semiconductor device
An object is to miniaturize a semiconductor device. Another object is to reduce the area of a driver circuit of a semiconductor device including a memory cell....
US-9,443,879 Display substrate and method of manufacturing the display substrate
A display substrate includes a base substrate, a common line on the base substrate, a first insulation layer covering the common line and having a first...
US-9,443,878 Display device and method of manufacturing display device
A display device includes a lower wiring layer, an interlayer insulating layer, and an upper wiring layer. The lower wiring layer includes first partial...
US-9,443,877 Thin film transistor panel having an etch stopper on semiconductor
A thin film transistor panel includes an insulating substrate, a gate insulating layer disposed on the insulating substrate, an oxide semiconductor layer...
US-9,443,876 Semiconductor device, display device including the semiconductor device, display module including the display...
To provide a semiconductor device including a planar transistor having an oxide semiconductor and a capacitor. In a semiconductor device, a transistor includes...
US-9,443,875 Manufacturing method for an array substrate that can avoid electrical leakage of thin film transistors
The present invention provides array substrate and manufacturing method thereof and display device. The manufacturing method comprises: forming patterns...
US-9,443,874 Semiconductor device and method for manufacturing the same
An object is to provide a thin film transistor having favorable electric characteristics and a semiconductor device including the thin film transistor as a...
US-9,443,873 Structure and method for tensile and compressive strained silicon germanium with same germanium concentration...
A method of making a semiconductor device includes forming a first silicon germanium layer on a substrate, the first silicon germanium layer forming a portion...
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