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Lateral type photodiode, image sensor including the same, and method of
manufacturing the photodiode and the...
Example embodiments relate to a lateral type photodiode including a substrate, an insulation mask layer formed on the substrate, and a first type semiconductor...
Solid-state imaging device and electronic apparatus
A solid-state imaging device includes a photoelectric conversion device that includes a non-chalcopyrite-based compound semiconductor of at least one layer,...
Method of increasing the band gap of iron pyrite by alloying with oxygen
A method of increasing the band gap of iron pyrite by alloying with oxygen is disclosed. According to one embodiment, a method comprises alloying iron pyrite...
Bibenzo[B]furan compound, photoelectric conversion material, and
photoelectric conversion element
Disclosed is a p-type organic semiconductive material that is easy to produce and that has a high planarity in its polymer skeleton, and also provides a...
A detector apparatus that is embodied to receive light and to generate electrical signals has a housing and a detector arranged in the housing. The detector...
Optoelectronic device having surface periodic grating structure
The present invention provides a optoelectronic device having a surface periodic grating structure and a manufacturing method thereof, which includes: a...
Thin film solar cell and manufacturing method therefor
In the present invention, in order to achieve a point contact, a thin film solar cell has a thin film light absorbing layer (3) disposed between a transparent...
Method of manufacturing a photovoltaic device
A method to improve CdTe-based photovoltaic device efficiency is disclosed, the method including steps for removing surface contaminants from a semiconductor...
Solid-state imaging device and electronic apparatus having a plurality of
photoelectric conversion layer for...
A solid-state imaging device which includes, a photoelectric conversion film provided on a second surface side which is the opposite side to a first surface on...
Alignment for metallization
Forming a metal layer on a solar cell. Forming a metal layer can include placing a patterned metal foil on the solar cell, where the patterned metal foil...
GaN-based Schottky barrier diode with algan surface layer
A Schottky diode and method of fabricating the Schottky diode using gallium nitride (GaN) materials is disclosed. The method includes providing an n-type GaN...
Schottky barrier diode
A Schottky barrier diode includes a substrate, a buffer layer formed on the substrate, an upper layer formed on the buffer layer, a first electrode layer formed...
The semiconductor device includes a p-anode region disposed on an n-drift region, and a p-diffusion region disposed so as to be in contact with the p-anode...
MEMS devices and fabrication methods thereof
A method for fabricating a MEMS device includes providing a micro-electro-mechanical system (MEMS) substrate having a sacrificial layer on a first side,...
Nonvolatile semiconductor memory device provided with charge storage layer
in memory cell
A nonvolatile semiconductor memory device includes a semiconductor portion, a first oxygen-containing portion provided on the semiconductor portion, a...
EPROM cells, EPROM cell arrays including the same, and methods of
fabricating the same
An electrically programmable read only memory (EPROM) cell includes a semiconductor layer having a first conductivity, a first junction region having a second...
Thin film transistor of display apparatus
Disclosed is a thin film transistor (TFT) of a display apparatus which reduces a leakage current caused by a hump and decreases screen defects. The TFT includes...
Semiconductor device and manufacturing method thereof
The semiconductor device includes an oxide semiconductor film having a first region and a pair of second regions facing each other with the first region...
Thin film transistor, method for manufacturing the same, display device
and electronic product
A thin film transistor (TFT) according to the present disclosure may include an active layer, an etch stop layer (ESL), a source electrode and a drain...
Semiconductor device and method for manufacturing the same
Electrical characteristics of a semiconductor device including the oxide semiconductor are improved. Furthermore, a highly reliable transistor with small...
Thin film transistor, array substrate and display apparatus
A thin film transistor, comprising: a substrate; a first electrode formed on the substrate; a first insulation layer formed on the first electrode; a gate...
Semiconductor arrangements and methods of manufacturing the same
A semiconductor arrangement that includes: a substrate; a back gate formed on the substrate; fins formed on opposite sides of the back gate; and back gate...
Structure and formation method of semiconductor device structure
Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a gate stack over a semiconductor...
FinFET having superlattice stressor
A fin field effect transistor (FinFET) device is provided. The FinFET includes a superlattice layer and a strained layer. The superlattice layer is supported by...
Methods for doping Fin field-effect transistors and Fin field-effect
A method of doping a fin field-effect transistor includes forming a plurality of semiconductor fins on a substrate wherein each semiconductor fin of the...
Semiconductor device and formation thereof
A semiconductor device and methods of formation are provided. The semiconductor device includes a first active region having a first active region height and an...
Single spacer for complementary metal oxide semiconductor process flow
A method of forming a semiconductor device that includes forming a high-k dielectric fin liner on the first plurality of fin structures in a first device region...
Semiconductor process and fin-shaped field effect transistor
A semiconductor process includes the following steps. A fin on a substrate is provided. Spacers are formed only on sidewalls of the fin, where a top surface of...
Semiconductor device structure and manufacturing method thereof
Some embodiments of the present disclosure provide a method of manufacturing a semiconductor device including receiving a FinFET precursor including a fin...
Stress in trigate devices using complimentary gate fill materials
Embodiments relate to an improved tri-gate device having gate metal fills, providing compressive or tensile stress upon at least a portion of the tri-gate...
Semiconductor device with enhanced mobility and method
In one embodiment, a vertical insulated-gate field effect transistor includes a feature embedded within a control electrode. The feature is placed within the...
Semiconductor memory device having an electrically floating body
An IC may include an array of memory cells formed in a semiconductor, including memory cells arranged in rows and columns, each memory cell may include a...
A decrease in resistance against an abnormal current of a semiconductor device is suppressed. A first transistor is sandwiched between two second transistors (a...
High density trench-based power MOSFETs with self-aligned active contacts
and method for making such devices
Aspects of the present disclosure describe a high density trench-based power MOSFET with self-aligned source contacts. The source contacts are self-aligned with...
Semiconductor device, and manufacturing method for same
A semiconductor device has a source region, a channel region, and a drain region disposed in order from the surface of the device in the thickness direction of...
To enhance a semiconductor device. A semiconductor device has a plurality of p.sup.+-type semiconductor regions disposed between the mutually adjacent two gate...
Semiconductor device and method for producing a semiconductor device
A semiconductor device includes a semiconductor substrate having first regions of a first conductivity type and body regions of the first conductivity type,...
Wide band gap semiconductor device
A semiconductor device having high reliability and high load short circuit withstand capability while maintaining a low ON resistance is provided, by using a...
High voltage field balance metal oxide field effect transistor (FBM)
A semiconductor device includes a semiconductor substrate of a first conductivity type. A first conductivity type epitaxial layer disposed on a top surface of...
Integrated termination for multiple trench field plate
A semiconductor device includes a vertical MOS transistor with a plurality of parallel RESURF drain trenches separated by a constant spacing in a vertical drain...
High voltage GaN transistor
A multiple field plate transistor includes an active region, with a source, a drain, and a gate. A first spacer layer is over the active region between the...
Method for manufacturing semiconductor device
The semiconductor device is manufactured by the following method. A first oxide semiconductor film is formed over a first gate electrode and a first insulating...
FinFET having highly doped source and drain regions
A method of forming a semiconductor device that includes forming an in-situ doped semiconductor material on a semiconductor substrate, and forming fin...
Forming punch-through stopper regions in finFET devices
In forming a punch-through stopper region in a fin field effect transistor (finFET) device, a substrate may be etched to form a pair of trenches that define a...
Method of manufacturing thin film transistor
A method of manufacturing a thin film transistor substrate is provided, including a first photoresist pattern covers a channel during a process of etching a...
Power LDMOS semiconductor device with reduced on-resistance and
manufacturing method thereof
An electronic semiconductor device including a semiconductor body having a first structural region and a second structural region, which extends on the first...
Semiconductor device and manufacturing method thereof
A semiconductor device includes a base dielectric layer, a semiconductor substrate layer disposed on the base dielectric layer, and a transistor disposed in the...
LDMOS with field plate connected to gate
Semiconductor devices, such as laterally diffused metal oxide semiconductor (LDMOS) devices, are described that have a field plate connected to a gate of the...
SOI transistor having drain and source regions of reduced length and a
stressed dielectric material adjacent...
By reconfiguring material in a recess formed in drain and source regions of SOI transistors, the depth of the recess may be increased down to the buried...
Replacement gate structure for enhancing conductivity
After formation of a gate cavity straddling at least one semiconductor material portion, a gate dielectric layer and at least one work function material layer...