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Patent # Description
US-9,450,122 Lateral type photodiode, image sensor including the same, and method of manufacturing the photodiode and the...
Example embodiments relate to a lateral type photodiode including a substrate, an insulation mask layer formed on the substrate, and a first type semiconductor...
US-9,450,121 Solid-state imaging device and electronic apparatus
A solid-state imaging device includes a photoelectric conversion device that includes a non-chalcopyrite-based compound semiconductor of at least one layer,...
US-9,450,120 Method of increasing the band gap of iron pyrite by alloying with oxygen
A method of increasing the band gap of iron pyrite by alloying with oxygen is disclosed. According to one embodiment, a method comprises alloying iron pyrite...
US-9,450,119 Bibenzo[B]furan compound, photoelectric conversion material, and photoelectric conversion element
Disclosed is a p-type organic semiconductive material that is easy to produce and that has a high planarity in its polymer skeleton, and also provides a...
US-9,450,118 Detector apparatus
A detector apparatus that is embodied to receive light and to generate electrical signals has a housing and a detector arranged in the housing. The detector...
US-9,450,117 Optoelectronic device having surface periodic grating structure
The present invention provides a optoelectronic device having a surface periodic grating structure and a manufacturing method thereof, which includes: a...
US-9,450,116 Thin film solar cell and manufacturing method therefor
In the present invention, in order to achieve a point contact, a thin film solar cell has a thin film light absorbing layer (3) disposed between a transparent...
US-9,450,115 Method of manufacturing a photovoltaic device
A method to improve CdTe-based photovoltaic device efficiency is disclosed, the method including steps for removing surface contaminants from a semiconductor...
US-9,450,114 Solid-state imaging device and electronic apparatus having a plurality of photoelectric conversion layer for...
A solid-state imaging device which includes, a photoelectric conversion film provided on a second surface side which is the opposite side to a first surface on...
US-9,450,113 Alignment for metallization
Forming a metal layer on a solar cell. Forming a metal layer can include placing a patterned metal foil on the solar cell, where the patterned metal foil...
US-9,450,112 GaN-based Schottky barrier diode with algan surface layer
A Schottky diode and method of fabricating the Schottky diode using gallium nitride (GaN) materials is disclosed. The method includes providing an n-type GaN...
US-9,450,111 Schottky barrier diode
A Schottky barrier diode includes a substrate, a buffer layer formed on the substrate, an upper layer formed on the buffer layer, a first electrode layer formed...
US-9,450,110 Semiconductor device
The semiconductor device includes a p-anode region disposed on an n-drift region, and a p-diffusion region disposed so as to be in contact with the p-anode...
US-9,450,109 MEMS devices and fabrication methods thereof
A method for fabricating a MEMS device includes providing a micro-electro-mechanical system (MEMS) substrate having a sacrificial layer on a first side,...
US-9,450,108 Nonvolatile semiconductor memory device provided with charge storage layer in memory cell
A nonvolatile semiconductor memory device includes a semiconductor portion, a first oxygen-containing portion provided on the semiconductor portion, a...
US-9,450,107 EPROM cells, EPROM cell arrays including the same, and methods of fabricating the same
An electrically programmable read only memory (EPROM) cell includes a semiconductor layer having a first conductivity, a first junction region having a second...
US-9,450,106 Thin film transistor of display apparatus
Disclosed is a thin film transistor (TFT) of a display apparatus which reduces a leakage current caused by a hump and decreases screen defects. The TFT includes...
US-9,450,104 Semiconductor device and manufacturing method thereof
The semiconductor device includes an oxide semiconductor film having a first region and a pair of second regions facing each other with the first region...
US-9,450,103 Thin film transistor, method for manufacturing the same, display device and electronic product
A thin film transistor (TFT) according to the present disclosure may include an active layer, an etch stop layer (ESL), a source electrode and a drain...
US-9,450,102 Semiconductor device and method for manufacturing the same
Electrical characteristics of a semiconductor device including the oxide semiconductor are improved. Furthermore, a highly reliable transistor with small...
US-9,450,101 Thin film transistor, array substrate and display apparatus
A thin film transistor, comprising: a substrate; a first electrode formed on the substrate; a first insulation layer formed on the first electrode; a gate...
US-9,450,100 Semiconductor arrangements and methods of manufacturing the same
A semiconductor arrangement that includes: a substrate; a back gate formed on the substrate; fins formed on opposite sides of the back gate; and back gate...
US-9,450,099 Structure and formation method of semiconductor device structure
Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a gate stack over a semiconductor...
US-9,450,098 FinFET having superlattice stressor
A fin field effect transistor (FinFET) device is provided. The FinFET includes a superlattice layer and a strained layer. The superlattice layer is supported by...
US-9,450,097 Methods for doping Fin field-effect transistors and Fin field-effect transistor
A method of doping a fin field-effect transistor includes forming a plurality of semiconductor fins on a substrate wherein each semiconductor fin of the...
US-9,450,096 Semiconductor device and formation thereof
A semiconductor device and methods of formation are provided. The semiconductor device includes a first active region having a first active region height and an...
US-9,450,095 Single spacer for complementary metal oxide semiconductor process flow
A method of forming a semiconductor device that includes forming a high-k dielectric fin liner on the first plurality of fin structures in a first device region...
US-9,450,094 Semiconductor process and fin-shaped field effect transistor
A semiconductor process includes the following steps. A fin on a substrate is provided. Spacers are formed only on sidewalls of the fin, where a top surface of...
US-9,450,093 Semiconductor device structure and manufacturing method thereof
Some embodiments of the present disclosure provide a method of manufacturing a semiconductor device including receiving a FinFET precursor including a fin...
US-9,450,092 Stress in trigate devices using complimentary gate fill materials
Embodiments relate to an improved tri-gate device having gate metal fills, providing compressive or tensile stress upon at least a portion of the tri-gate...
US-9,450,091 Semiconductor device with enhanced mobility and method
In one embodiment, a vertical insulated-gate field effect transistor includes a feature embedded within a control electrode. The feature is placed within the...
US-9,450,090 Semiconductor memory device having an electrically floating body transistor
An IC may include an array of memory cells formed in a semiconductor, including memory cells arranged in rows and columns, each memory cell may include a...
US-9,450,089 Semiconductor device
A decrease in resistance against an abnormal current of a semiconductor device is suppressed. A first transistor is sandwiched between two second transistors (a...
US-9,450,088 High density trench-based power MOSFETs with self-aligned active contacts and method for making such devices
Aspects of the present disclosure describe a high density trench-based power MOSFET with self-aligned source contacts. The source contacts are self-aligned with...
US-9,450,087 Semiconductor device, and manufacturing method for same
A semiconductor device has a source region, a channel region, and a drain region disposed in order from the surface of the device in the thickness direction of...
US-9,450,086 Semiconductor device
To enhance a semiconductor device. A semiconductor device has a plurality of p.sup.+-type semiconductor regions disposed between the mutually adjacent two gate...
US-9,450,085 Semiconductor device and method for producing a semiconductor device
A semiconductor device includes a semiconductor substrate having first regions of a first conductivity type and body regions of the first conductivity type,...
US-9,450,084 Wide band gap semiconductor device
A semiconductor device having high reliability and high load short circuit withstand capability while maintaining a low ON resistance is provided, by using a...
US-9,450,083 High voltage field balance metal oxide field effect transistor (FBM)
A semiconductor device includes a semiconductor substrate of a first conductivity type. A first conductivity type epitaxial layer disposed on a top surface of...
US-9,450,082 Integrated termination for multiple trench field plate
A semiconductor device includes a vertical MOS transistor with a plurality of parallel RESURF drain trenches separated by a constant spacing in a vertical drain...
US-9,450,081 High voltage GaN transistor
A multiple field plate transistor includes an active region, with a source, a drain, and a gate. A first spacer layer is over the active region between the...
US-9,450,080 Method for manufacturing semiconductor device
The semiconductor device is manufactured by the following method. A first oxide semiconductor film is formed over a first gate electrode and a first insulating...
US-9,450,079 FinFET having highly doped source and drain regions
A method of forming a semiconductor device that includes forming an in-situ doped semiconductor material on a semiconductor substrate, and forming fin...
US-9,450,078 Forming punch-through stopper regions in finFET devices
In forming a punch-through stopper region in a fin field effect transistor (finFET) device, a substrate may be etched to form a pair of trenches that define a...
US-9,450,077 Method of manufacturing thin film transistor
A method of manufacturing a thin film transistor substrate is provided, including a first photoresist pattern covers a channel during a process of etching a...
US-9,450,076 Power LDMOS semiconductor device with reduced on-resistance and manufacturing method thereof
An electronic semiconductor device including a semiconductor body having a first structural region and a second structural region, which extends on the first...
US-9,450,075 Semiconductor device and manufacturing method thereof
A semiconductor device includes a base dielectric layer, a semiconductor substrate layer disposed on the base dielectric layer, and a transistor disposed in the...
US-9,450,074 LDMOS with field plate connected to gate
Semiconductor devices, such as laterally diffused metal oxide semiconductor (LDMOS) devices, are described that have a field plate connected to a gate of the...
US-9,450,073 SOI transistor having drain and source regions of reduced length and a stressed dielectric material adjacent...
By reconfiguring material in a recess formed in drain and source regions of SOI transistors, the depth of the recess may be increased down to the buried...
US-9,450,072 Replacement gate structure for enhancing conductivity
After formation of a gate cavity straddling at least one semiconductor material portion, a gate dielectric layer and at least one work function material layer...
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