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Patent # Description
US-9,450,071 Field effect semiconductor devices and methods of manufacturing field effect semiconductor devices
Field effect semiconductor devices and methods of manufacturing the same are provided, the field effect semiconductor devices include a second semiconductor...
US-9,450,070 Method for manufacturing a silicon semiconductor substrate including a diffusion layer prior to forming a...
A method for manufacturing a silicon semiconductor substrate including a diffusion layer prior to forming a semiconductor device thereon, includes providing a...
US-9,450,069 Silicon germanium heterojunction bipolar transistor structure and method
Disclosed is an improved semiconductor structure (e.g., a silicon germanium (SiGe) hetero-junction bipolar transistor) having a narrow essentially...
US-9,450,068 Method for manufacturing silicon carbide semiconductor device
In a method for manufacturing a silicon carbide semiconductor device having a JFET, a trench is formed in a semiconductor substrate, and a channel layer and a...
US-9,450,067 Semiconductor devices comprising aluminum oxide
A semiconductor structure comprising aluminum oxide. The semiconductor structure comprises a dielectric material overlying a substrate. The aluminum oxide...
US-9,450,066 Vertically movable gate field effect transistor (VMGFET) on a silicon-on-insulator (SOI) wafer and method of...
Methods for forming a vertically movable gate field effect transistor (VMGFET) on a silicon-on-insulator (SOI) wafer are described. The methods include...
US-9,450,065 Nonvolatile semiconductor memory device and method for manufacturing same
According to one embodiment, a nonvolatile semiconductor memory device includes a first stacked structure body, a first semiconductor layer, a first organic...
US-9,450,064 Semiconductor element, method for fabricating the same, and semiconductor device including the same
A semiconductor element includes: a substrate; a gate dielectric layer formed over the substrate; a flat band voltage adjusting layer formed over the gate...
US-9,450,063 Semiconductor device and method
A semiconductor device is disclosed. One embodiment includes a lateral HEMT (High Electron Mobility Transistor) structure with a heterojunction between two...
US-9,450,062 Semiconductor device having polysilicon plugs with silicide crystallites
A semiconductor device includes a field effect transistor structure having source zones of a first conductivity type and body zones of a second conductivity...
US-9,450,061 Metal bump structure for use in driver IC and method for forming the same
A metal bump structure for use in a driver IC includes a passivation layer disposed on a metal pad and defining a recess on the metal pad, an adhesion layer in...
US-9,450,060 Method of manufacturing a silicon carbide semiconductor device
A silicon carbide substrate includes a first impurity region, a well region in contact with the first impurity region, and a second impurity region separated...
US-9,450,059 Semiconductor device and method of manufacturing the same
According to one embodiment, a semiconductor device includes a semiconductor substrate with a groove for forming an embedded gate therein, and a gate electrode...
US-9,450,058 Semiconductor device
A method for manufacturing a semiconductor device includes, forming, on a substrate, an element isolation insulating film which includes a protruding portion...
US-9,450,057 Split gate cells for embedded flash memory
In a method of forming a split gate memory cell, a sacrificial spacer is formed over a semiconductor substrate. A first layer of conductive material is formed...
US-9,450,056 Lateral DMOS device with dummy gate
An LDMOS transistor with a dummy gate comprises an extended drift region formed over a substrate, a drain region formed in the extended drift region, a channel...
US-9,450,054 Dislocation in SiC semiconductor substrate
A semiconductor substrate has a main surface and formed of single crystal silicon carbide. The main surface includes a central area, which is an area other than...
US-9,450,053 Photonic integrated circuits based on quantum cascade structures
Photonic integrated circuits (PICs) are based on quantum cascade (QC) structures. In embodiment methods and corresponding devices, a QC layer in a wave...
US-9,450,052 EEPROM memory cell with a coupler region and method of making the same
An EEPROM memory cell with a coupler region is disclosed. The coupler region has a well and at least one feeder region formed in the well. The at least one...
US-9,450,051 High voltage semiconductor apparatus
A vertical high voltage semiconductor apparatus includes a first conductivity semiconductor substrate; a first conductivity semiconductor layer disposed on the...
US-9,450,050 Lateral super junctions with high substrate breakdown and build in avalanche clamp diode
This invention discloses configurations and methods to manufacture lateral power device including a super-junction structure with an avalanche clamp diode...
US-9,450,049 Semiconductor device and method for fabricating the same
A semiconductor device includes a substrate, a compound semiconductor layer, and first and second semiconductor patterns. The substrate includes first and...
US-9,450,048 Semiconductor device and manufacturing method and operating method for the same
A semiconductor device and a manufacturing method and an operating method for the same are provided. The semiconductor device comprises a substrate, a deep...
US-9,450,047 Semiconductor structure having enlarged regrowth regions and manufacturing method of the same
The present disclosure provides a semiconductor structure, including: an insulation region including a top surface; a semiconductor fin protruding from the top...
US-9,450,046 Semiconductor structure with fin structure and wire structure and method for forming the same
A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a substrate and a fin structure formed over the...
US-9,450,045 Method for forming lateral super-junction structure
A fabrication method to form a lateral superjunction structure in a semiconductor device uses N and P type ion implantations into a base epitaxial layer. In...
US-9,450,044 Guard ring structure and method of forming the same
A circuit device includes core circuitry. The circuit device further includes a first set of guard rings having a first dopant type, the first set of guard...
US-9,450,043 Methods and devices for fabricating and assembling printable semiconductor elements
The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate...
US-9,450,042 Integrated circuits with metal-insulator-metal (MIM) capacitors and methods for fabricating same
Integrated circuits with metal-insulator-metal (MIM) capacitors and methods for fabricating such integrated circuits are provided. In an embodiment, an...
US-9,450,041 Stackable high-density metal-oxide-metal capacitor with minimum top plate parasitic capacitance
A system including first and second plurality of conductors stacked along a first axis on a substrate. The first axis is perpendicular to a plane on which the...
US-9,450,040 Organic light emitting diode display
An organic light emitting diode display includes a substrate, a scan line on the substrate for transferring a scan signal, a data line crossing the scan line...
US-9,450,039 Organic light emitting display apparatus and method of manufacturing the same
An organic light emitting display apparatus and a method of manufacturing the same are disclosed. The organic light emitting display apparatus includes, for...
US-9,450,038 Flexible display
There is provided a flexible display having a plurality of innovations configured to allow bending of a portion or portions to reduce apparent border size...
US-9,450,037 Light emitting display apparatus
There is provided a light emitting display apparatus including at least a light emitting element and a thin film transistor (TFT) for driving the light emitting...
US-9,450,036 Semiconductor device and method of driving the semiconductor device
Display irregularities in light emitting devices, which develop due to dispersions per pixel in the threshold value of TFTs for supplying electric current to...
US-9,450,035 Organic light emitting display device and method for manufacturing the same
The organic light emitting display device includes a flexible substrate, a thin-film transistor on the flexible substrate, a first anode on the thin-film...
US-9,450,034 Display devices and methods of manufacturing display devices
A display device includes a substrate including a display region and a peripheral region, display structures at the display region of the substrate, a plurality...
US-9,450,033 Organic light emitting diode (OLED) display apparatus having light sensing function
An organic light emitting diode (OLED) display apparatus having an optical sensing function is provided. The OLED display apparatus may photograph an external...
US-9,450,032 Light-emitting device, electronic device, and lighting device
A novel light-emitting device with small power consumption, which can be formed with high productivity, is provided. The light-emitting device includes a first...
US-9,450,031 Display substrate and display device applying the same
A display substrate and a display device applying the same are provided. The display substrate includes a base plate and a display structure. The display...
US-9,450,030 Active matrix light-emitting device with overlapping electroluminescent layers
A light emitting device having high definition, a high aperture ratio, and high reliability is provided. The present invention achieves high definition and a...
US-9,450,029 OLED display panel and method for manufacturing the same
Provided are OLED display panel and method for manufacturing the same. The OLED display panel includes a plurality of pixel units, each of the plurality of...
US-9,450,028 Organic light-emitting device and image display system employing the same
The disclosure provides an organic light-emitting device. The organic light-emitting device includes a substrate, and an organic light-emitting pixel array...
US-9,450,027 Method of forming bus line designs for large-area OLED lighting
Systems, and methods for the design and fabrication of OLEDs, including large-area OLEDs with metal bus lines, are provided. For a given panel area dimension,...
US-9,450,026 Semiconductor device
According to an embodiment, a semiconductor device includes at least two control electrodes, a plurality of semiconductor layers and an insulating film. Each...
US-9,450,025 Resistive memory device and method of operating resistive memory device
A resistive memory device includes a plurality of memory cell pillars arranged in a line in one direction and each having a memory layer and a top electrode...
US-9,450,024 Field effect transistor constructions and memory arrays
In some embodiments, a transistor includes a stack having a bottom source/drain region, a first insulative material, a conductive gate, a second insulative...
US-9,450,023 Vertical bit line non-volatile memory with recessed word lines
A three-dimensional (3D) non-volatile memory array is provided having multiple word line layers stacked vertically with interleaving insulating layers over a...
US-9,450,022 Memristor devices and fabrication
A method for fabricating a digital memristor crossbar array includes applying a protective layer on at least a portion of a memristive layer. A method for...
US-9,450,021 Multi-bit MTJ memory cell using two variable resistance layers
This technology provides an electronic device. An electronic device in accordance with an implementation of this document includes a semiconductor memory, and...
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